TW200705552A - Semiconductor device manufacturing method and substrate treatment device - Google Patents

Semiconductor device manufacturing method and substrate treatment device

Info

Publication number
TW200705552A
TW200705552A TW095107720A TW95107720A TW200705552A TW 200705552 A TW200705552 A TW 200705552A TW 095107720 A TW095107720 A TW 095107720A TW 95107720 A TW95107720 A TW 95107720A TW 200705552 A TW200705552 A TW 200705552A
Authority
TW
Taiwan
Prior art keywords
treatment chamber
substrate
oxidization
hydrogen
gas
Prior art date
Application number
TW095107720A
Other languages
English (en)
Chinese (zh)
Other versions
TWI342585B (enExample
Inventor
Kazubiro Yuasa
Yasuhiro Megawa
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200705552A publication Critical patent/TW200705552A/zh
Application granted granted Critical
Publication of TWI342585B publication Critical patent/TWI342585B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095107720A 2005-03-08 2006-03-08 Semiconductor device manufacturing method and substrate treatment device TW200705552A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005064475 2005-03-08

Publications (2)

Publication Number Publication Date
TW200705552A true TW200705552A (en) 2007-02-01
TWI342585B TWI342585B (enExample) 2011-05-21

Family

ID=36953346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095107720A TW200705552A (en) 2005-03-08 2006-03-08 Semiconductor device manufacturing method and substrate treatment device

Country Status (5)

Country Link
US (2) US7713883B2 (enExample)
JP (3) JP4672007B2 (enExample)
KR (5) KR100909697B1 (enExample)
TW (1) TW200705552A (enExample)
WO (1) WO2006095752A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104451599A (zh) * 2013-09-13 2015-03-25 东京毅力科创株式会社 氧化硅膜的制造方法
TWI874798B (zh) * 2021-12-15 2025-03-01 南韓商圓益Ｉｐｓ股份有限公司 基板處理方法

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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
WO2011156650A2 (en) 2010-06-10 2011-12-15 Applied Materials, Inc. Low resistivity tungsten pvd with enhanced ionization and rf power coupling
US9006116B2 (en) * 2011-06-03 2015-04-14 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
KR102028779B1 (ko) * 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
JP6380063B2 (ja) * 2014-12-08 2018-08-29 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、気相成長装置
JP6573578B2 (ja) 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2018055724A1 (ja) * 2016-09-23 2018-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2020059133A1 (ja) 2018-09-21 2020-03-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及び記録媒体
JP7345245B2 (ja) * 2018-11-13 2023-09-15 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
US20230215737A1 (en) * 2021-12-31 2023-07-06 Texas Instruments Incorporated Method of annealing out silicon defectivity

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JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
JP2902012B2 (ja) * 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
JP3541846B2 (ja) * 1992-05-22 2004-07-14 松下電器産業株式会社 半導体製造装置
JP3207943B2 (ja) * 1992-11-17 2001-09-10 忠弘 大見 低温酸化膜形成装置および低温酸化膜形成方法
JP3310386B2 (ja) * 1993-05-25 2002-08-05 忠弘 大見 絶縁酸化膜の形成方法及び半導体装置
KR100310461B1 (ko) 1994-12-20 2001-12-15 박종섭 실리콘산화막의형성방법
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH10340909A (ja) 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
WO1999003141A1 (en) * 1997-07-11 1999-01-21 Applied Materials, Inc. Method and apparatus for in situ vapor generation
JP3156680B2 (ja) * 1998-10-13 2001-04-16 日本電気株式会社 半導体装置の製造方法
JP2000211998A (ja) * 1999-01-25 2000-08-02 Angstrom Technology Partnership シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法
NL1013667C2 (nl) * 1999-11-25 2000-12-15 Asm Int Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal.
US20010037237A1 (en) * 2000-04-28 2001-11-01 Fujitsu Limited Sales promotion controlling system based on direct mail, server thereof , method thereof, and computer readable record medium thereof
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
JP2002110667A (ja) 2000-09-29 2002-04-12 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2002176051A (ja) * 2000-12-06 2002-06-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE10119741B4 (de) * 2001-04-23 2012-01-19 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
JP2002353214A (ja) * 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
JP2003086792A (ja) * 2001-09-10 2003-03-20 National Institute Of Advanced Industrial & Technology 半導体装置の作製法
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
US6916744B2 (en) * 2002-12-19 2005-07-12 Applied Materials, Inc. Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile
JP2003338623A (ja) * 2003-04-18 2003-11-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004172623A (ja) * 2003-11-17 2004-06-17 Renesas Technology Corp 半導体集積回路装置の製造方法
KR100591762B1 (ko) * 2004-01-19 2006-06-22 삼성전자주식회사 증착 장치 및 증착 방법
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
WO2006082730A1 (ja) * 2005-02-01 2006-08-10 Tokyo Electron Limited 半導体装置の製造方法およびプラズマ酸化処理方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104451599A (zh) * 2013-09-13 2015-03-25 东京毅力科创株式会社 氧化硅膜的制造方法
CN104451599B (zh) * 2013-09-13 2018-06-19 东京毅力科创株式会社 氧化硅膜的制造方法
TWI874798B (zh) * 2021-12-15 2025-03-01 南韓商圓益Ｉｐｓ股份有限公司 基板處理方法

Also Published As

Publication number Publication date
KR20100028663A (ko) 2010-03-12
JP2011003915A (ja) 2011-01-06
KR100994649B1 (ko) 2010-11-16
JP5399996B2 (ja) 2014-01-29
JP2011077534A (ja) 2011-04-14
KR100966086B1 (ko) 2010-06-28
JP4672007B2 (ja) 2011-04-20
US7713883B2 (en) 2010-05-11
US20080124943A1 (en) 2008-05-29
TWI342585B (enExample) 2011-05-21
US20100192855A1 (en) 2010-08-05
WO2006095752A1 (ja) 2006-09-14
KR20070098952A (ko) 2007-10-05
KR100982996B1 (ko) 2010-09-17
KR100909697B1 (ko) 2009-07-29
KR101002945B1 (ko) 2010-12-21
KR20100018110A (ko) 2010-02-16
KR20090033923A (ko) 2009-04-06
JPWO2006095752A1 (ja) 2008-08-14
KR20100057101A (ko) 2010-05-28
JP5325363B2 (ja) 2013-10-23

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