JP4672007B2 - 半導体装置の製造方法、基板処理方法及び基板処理装置 - Google Patents

半導体装置の製造方法、基板処理方法及び基板処理装置 Download PDF

Info

Publication number
JP4672007B2
JP4672007B2 JP2007507138A JP2007507138A JP4672007B2 JP 4672007 B2 JP4672007 B2 JP 4672007B2 JP 2007507138 A JP2007507138 A JP 2007507138A JP 2007507138 A JP2007507138 A JP 2007507138A JP 4672007 B2 JP4672007 B2 JP 4672007B2
Authority
JP
Japan
Prior art keywords
hydrogen
containing gas
processing chamber
oxidation
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007507138A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2006095752A1 (ja
Inventor
和宏 湯浅
靖浩 女川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Publication of JPWO2006095752A1 publication Critical patent/JPWO2006095752A1/ja
Application granted granted Critical
Publication of JP4672007B2 publication Critical patent/JP4672007B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007507138A 2005-03-08 2006-03-08 半導体装置の製造方法、基板処理方法及び基板処理装置 Active JP4672007B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005064475 2005-03-08
JP2005064475 2005-03-08
PCT/JP2006/304429 WO2006095752A1 (ja) 2005-03-08 2006-03-08 半導体装置の製造方法および基板処理装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010173284A Division JP5399996B2 (ja) 2005-03-08 2010-08-02 半導体装置の製造方法、基板処理方法および基板処理装置
JP2010255766A Division JP5325363B2 (ja) 2005-03-08 2010-11-16 半導体装置の製造方法、基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
JPWO2006095752A1 JPWO2006095752A1 (ja) 2008-08-14
JP4672007B2 true JP4672007B2 (ja) 2011-04-20

Family

ID=36953346

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007507138A Active JP4672007B2 (ja) 2005-03-08 2006-03-08 半導体装置の製造方法、基板処理方法及び基板処理装置
JP2010173284A Active JP5399996B2 (ja) 2005-03-08 2010-08-02 半導体装置の製造方法、基板処理方法および基板処理装置
JP2010255766A Active JP5325363B2 (ja) 2005-03-08 2010-11-16 半導体装置の製造方法、基板処理方法及び基板処理装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010173284A Active JP5399996B2 (ja) 2005-03-08 2010-08-02 半導体装置の製造方法、基板処理方法および基板処理装置
JP2010255766A Active JP5325363B2 (ja) 2005-03-08 2010-11-16 半導体装置の製造方法、基板処理方法及び基板処理装置

Country Status (5)

Country Link
US (2) US7713883B2 (enExample)
JP (3) JP4672007B2 (enExample)
KR (5) KR100909697B1 (enExample)
TW (1) TW200705552A (enExample)
WO (1) WO2006095752A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5383332B2 (ja) 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
WO2011156650A2 (en) 2010-06-10 2011-12-15 Applied Materials, Inc. Low resistivity tungsten pvd with enhanced ionization and rf power coupling
US9006116B2 (en) * 2011-06-03 2015-04-14 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
KR102028779B1 (ko) * 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
JP6196106B2 (ja) * 2013-09-13 2017-09-13 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP6380063B2 (ja) * 2014-12-08 2018-08-29 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、気相成長装置
JP6573578B2 (ja) 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
WO2018055724A1 (ja) * 2016-09-23 2018-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2020059133A1 (ja) 2018-09-21 2020-03-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及び記録媒体
JP7345245B2 (ja) * 2018-11-13 2023-09-15 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
KR20230090855A (ko) * 2021-12-15 2023-06-22 주식회사 원익아이피에스 기판처리방법
US20230215737A1 (en) * 2021-12-31 2023-07-06 Texas Instruments Incorporated Method of annealing out silicon defectivity

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340909A (ja) * 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2000211998A (ja) * 1999-01-25 2000-08-02 Angstrom Technology Partnership シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法
JP2002324792A (ja) * 1997-07-11 2002-11-08 Applied Materials Inc インシチュウ気相生成方法及び装置
JP2003086792A (ja) * 2001-09-10 2003-03-20 National Institute Of Advanced Industrial & Technology 半導体装置の作製法
JP2003338623A (ja) * 2003-04-18 2003-11-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004006898A (ja) * 1992-05-22 2004-01-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および製造装置
JP2004172623A (ja) * 2003-11-17 2004-06-17 Renesas Technology Corp 半導体集積回路装置の製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132136A (ja) * 1983-01-19 1984-07-30 Hitachi Ltd 半導体装置の製造方法
JP2902012B2 (ja) * 1989-10-27 1999-06-07 国際電気株式会社 低圧酸化装置
JP3207943B2 (ja) * 1992-11-17 2001-09-10 忠弘 大見 低温酸化膜形成装置および低温酸化膜形成方法
JP3310386B2 (ja) * 1993-05-25 2002-08-05 忠弘 大見 絶縁酸化膜の形成方法及び半導体装置
KR100310461B1 (ko) 1994-12-20 2001-12-15 박종섭 실리콘산화막의형성방법
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JP3156680B2 (ja) * 1998-10-13 2001-04-16 日本電気株式会社 半導体装置の製造方法
NL1013667C2 (nl) * 1999-11-25 2000-12-15 Asm Int Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal.
US20010037237A1 (en) * 2000-04-28 2001-11-01 Fujitsu Limited Sales promotion controlling system based on direct mail, server thereof , method thereof, and computer readable record medium thereof
JP3436256B2 (ja) * 2000-05-02 2003-08-11 東京エレクトロン株式会社 被処理体の酸化方法及び酸化装置
JP2002110667A (ja) 2000-09-29 2002-04-12 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2002176051A (ja) * 2000-12-06 2002-06-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE10119741B4 (de) * 2001-04-23 2012-01-19 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
JP2002353214A (ja) * 2001-05-24 2002-12-06 Nec Corp 半導体装置の製造方法
JP2002353210A (ja) * 2001-05-25 2002-12-06 Tokyo Electron Ltd 熱処理装置および熱処理方法
TW200416772A (en) * 2002-06-06 2004-09-01 Asml Us Inc System and method for hydrogen-rich selective oxidation
US6916744B2 (en) * 2002-12-19 2005-07-12 Applied Materials, Inc. Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile
KR100591762B1 (ko) * 2004-01-19 2006-06-22 삼성전자주식회사 증착 장치 및 증착 방법
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
WO2006082730A1 (ja) * 2005-02-01 2006-08-10 Tokyo Electron Limited 半導体装置の製造方法およびプラズマ酸化処理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006898A (ja) * 1992-05-22 2004-01-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および製造装置
JPH10340909A (ja) * 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002324792A (ja) * 1997-07-11 2002-11-08 Applied Materials Inc インシチュウ気相生成方法及び装置
JP2003188169A (ja) * 1997-07-11 2003-07-04 Applied Materials Inc インシチュウ蒸気生成方法及び装置
JP2000211998A (ja) * 1999-01-25 2000-08-02 Angstrom Technology Partnership シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法
JP2003086792A (ja) * 2001-09-10 2003-03-20 National Institute Of Advanced Industrial & Technology 半導体装置の作製法
JP2003338623A (ja) * 2003-04-18 2003-11-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004172623A (ja) * 2003-11-17 2004-06-17 Renesas Technology Corp 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR20100028663A (ko) 2010-03-12
JP2011003915A (ja) 2011-01-06
KR100994649B1 (ko) 2010-11-16
JP5399996B2 (ja) 2014-01-29
JP2011077534A (ja) 2011-04-14
KR100966086B1 (ko) 2010-06-28
US7713883B2 (en) 2010-05-11
US20080124943A1 (en) 2008-05-29
TWI342585B (enExample) 2011-05-21
US20100192855A1 (en) 2010-08-05
WO2006095752A1 (ja) 2006-09-14
TW200705552A (en) 2007-02-01
KR20070098952A (ko) 2007-10-05
KR100982996B1 (ko) 2010-09-17
KR100909697B1 (ko) 2009-07-29
KR101002945B1 (ko) 2010-12-21
KR20100018110A (ko) 2010-02-16
KR20090033923A (ko) 2009-04-06
JPWO2006095752A1 (ja) 2008-08-14
KR20100057101A (ko) 2010-05-28
JP5325363B2 (ja) 2013-10-23

Similar Documents

Publication Publication Date Title
JP5399996B2 (ja) 半導体装置の製造方法、基板処理方法および基板処理装置
US7951728B2 (en) Method of improving oxide growth rate of selective oxidation processes
US7767594B2 (en) Semiconductor device producing method
TWI604562B (zh) 選擇性氮化方法
JP6847202B2 (ja) 半導体装置の製造方法、基板処理装置およびプログラム
CN112740364B (zh) 半导体装置的制造方法、基板处理装置和记录介质
KR102457068B1 (ko) 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램
JP2010087167A (ja) 半導体装置の製造方法
US20050241578A1 (en) Oxidizing method and oxidizing unit for object to be processed
KR100739964B1 (ko) 반도체 소자의 제조방법
KR100902106B1 (ko) 텅스텐함유막이 포함된 패턴을 구비한 반도체소자의 제조방법
JP2006351582A (ja) 半導体装置の製造方法及び基板処理装置
JP2014187104A (ja) 半導体装置の製造方法、基板処理装置、半導体装置、プログラムおよび記憶媒体

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100730

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100921

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101116

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110111

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110118

R150 Certificate of patent or registration of utility model

Ref document number: 4672007

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140128

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350