KR20100028663A - 반도체장치의 제조 방법 및 기판처리장치 - Google Patents
반도체장치의 제조 방법 및 기판처리장치 Download PDFInfo
- Publication number
- KR20100028663A KR20100028663A KR1020107002353A KR20107002353A KR20100028663A KR 20100028663 A KR20100028663 A KR 20100028663A KR 1020107002353 A KR1020107002353 A KR 1020107002353A KR 20107002353 A KR20107002353 A KR 20107002353A KR 20100028663 A KR20100028663 A KR 20100028663A
- Authority
- KR
- South Korea
- Prior art keywords
- processing chamber
- pressure
- containing gas
- hydrogen
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 130
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 176
- 239000007789 gas Substances 0.000 claims abstract description 155
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 130
- 239000001257 hydrogen Substances 0.000 claims abstract description 116
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 116
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 87
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000001301 oxygen Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 85
- 230000003647 oxidation Effects 0.000 claims description 171
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 142
- 229910052710 silicon Inorganic materials 0.000 claims description 102
- 229910052751 metal Inorganic materials 0.000 claims description 90
- 239000002184 metal Substances 0.000 claims description 90
- 230000008569 process Effects 0.000 claims description 61
- 230000001590 oxidative effect Effects 0.000 abstract description 24
- 239000010408 film Substances 0.000 description 162
- 239000010703 silicon Substances 0.000 description 96
- 239000010410 layer Substances 0.000 description 79
- 125000004429 atom Chemical group 0.000 description 62
- 238000006243 chemical reaction Methods 0.000 description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 31
- 229920005591 polysilicon Polymers 0.000 description 23
- 239000013078 crystal Substances 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 229910021332 silicide Inorganic materials 0.000 description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 18
- 229910052721 tungsten Inorganic materials 0.000 description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 17
- 239000010937 tungsten Substances 0.000 description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 16
- 229910001882 dioxygen Inorganic materials 0.000 description 16
- 239000012298 atmosphere Substances 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 7
- 230000008022 sublimation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000011068 loading method Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000009279 wet oxidation reaction Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
도 2는 본 실시 형태와 비교예의 산화처리법을 이용해 실리콘기판에 산화막을 형성했을 때의 산화막의 두께 데이터의 비교도.
도 3은 본 실시 형태에 따른 기판처리장치로서의 종형 반도체장치의 구성을 나타내는 설명도.
도 4는 반도체소자의 각종 게이트를 설명하는 적층구조도.
도 5는 본 실시 형태에 있어서의 수소가 풍부한 조건에 의한 효과의 설명도.
도 6은 H2/O2 유량비를 변화시켜 H2와 O2를 노내에 공급했을 때의 노내의 압력변동을 나타내는 도면.
도 7은 노내압력을 변화시켜 실리콘기판에 산화막을 형성한 경우에, 등방성이 유지되는지를 판정한 결과를 나타내는 도면.
도 8은 H2/O2 유량비를 변화시켜 텅스텐, 실리콘을 처리한 경우에, 선택산화가 이루어지는지를 판정한 결과를 나타내는 도면.
4 : 처리실
7 : 산소공급라인(산소함유가스 공급라인)
8 : 수소공급라인(수소함유가스 공급라인)
12 a, 12 b : 매스플로우 컨트롤러 23 : 배기라인
24 : 제어수단
Claims (8)
- 표면에 적어도 금속원자를 포함하지 않고 실리콘 원자를 포함하는 층과, 금속원자를 포함하는 층이 노출하고 있는 기판을 처리실 내에 반입하는 공정과,
상기 처리실 내에 산소 함유 가스와 수소 함유 가스를 공급하여 상기 기판표면을 산화 처리하는 공정과,
산화 처리 후의 상기 기판을 상기 처리실로부터 반출하는 공정을 포함하고,
상기 산화 처리 공정에서는, 상기 처리실 내의 온도를 600℃ 이상으로 하고, 상기 처리실 내의 압력을 1333Pa이하로 하여, 산소 함유 가스의 유량 A 에 대한 수소 함유 가스의 유량 B의 유량비 B/A를 2이상으로 하는 반도체 장치의 제조 방법. - 제 1항에 있어서,
상기 산화 처리 공정에서는,
상기 처리실 내의 온도를 600~1100℃로 하고, 상기 처리실 내의 압력을 13.3~1333Pa로 하여, 상기 유량비 B/A를 2~5로 하는 반도체 장치의 제조 방법. - 제1항에 있어서,
상기 산화 처리 공정에서는,
상기 처리실 내의 온도를 800~900℃로 하고, 상기 처리실 내의 압력을 13.3~1333Pa로 하여, 상기 유량비 B/A를 2~5로 하는 반도체 장치의 제조 방법. - 표면에 적어도 금속원자를 포함하지 않고 실리콘 원자를 포함하는 층과, 금속원자를 포함하는 층이 노출하고 있는 기판을 상기 처리실 내에 반입하는 공정과,
상기 처리실 내에 산소 함유 가스와 수소 함유 가스를 공급하여 상기 기판 표면을 산화 처리하는 공정과,
산화 처리 후의 상기 기판을 처리실로부터 반출하는 공정을 포함하고,
상기 산화 처리 공정에서는, 상기 처리실 내의 온도를 600℃이상으로 하고, 상기 처리실 내의 압력을 제1 압력으로서 상기 처리실 내에 상기 수소 함유 가스를 선행하여 도입하고, 이어서 상기 처리실 내의 압력을 제2 압력으로서 상기 처리실 내로의 상기 수소 함유 가스의 도입을 유지한 상태에서 상기 처리실 내에 상기 산소 함유 가스를 도입하고, 상기 제1 압력을 상기 제2 압력보다도 크게함과 동시에, 상기 제2 압력을 1333Pa이하로 하여, 산소 함유 가스의 유량 A에 대한 수소 함유 가스의 유량 B의 유량비 B/A를 2 이상으로 하는 반도체 장치의 제조 방법. - 제 1항에 있어서,
상기 산화 처리 공정에서는,
상기 처리실 내의 온도를 600~1100℃로 하고, 상기 제1 압력을 133~13330Pa로 하고, 상기 제2 압력을 13.3~1333Pa로 하여, 상기 유량비 B/A를 2~5로 하는 반도체 장치의 제조 방법 - 제 1항에 있어서,
상기 산화 처리 공정에서는,
상기 처리실 내의 온도를 800~900℃로 하고, 상기 제1 압력을 133~13330Pa로 하고, 상기 제2 압력을 13.3~1333Pa로 하여, 상기 유량비 B/A를 2~5로 하는 반도체 장치의 제조 방법. - 기판을 처리하는 처리실과,
상기 처리실 내에 산소 함유 가스를 공급하는 산소 함유 가스 공급 라인과,
상기 처리실 내에 수소 함유 가스를 공급하는 수소 함유 가스 공급 라인과,
상기 처리실 내를 배기하는 배기 라인과,
상기 배기 라인에 접속되고, 상기 처리실 내를 진공 배기하는 진공 펌프와,
표면에 적어도 금속원자를 포함하지 않고 실리콘 원자를 포함하는 층과, 금속원자를 포함하는 층이 노출하고 있는 기판을 상기 처리실 내에 수용한 상태에서, 상기 처리실 내의 온도를 600℃ 이상으로 하고, 상기 처리실 내의 압력을 1333Pa이하로 하여, 상기 처리실 내에 산소 함유 가스와 수소 함유 가스를 공급하여 상기 기판 표면을 산화처리하도록 하고, 그 때, 산소 함유 가스의 유량 A에 대한 수소 함유 가스의 유량 B의 유량비 B/A를 2 이상이 되도록 제어하는 콘트롤러
를 포함하는 기판 처리 장치. - 기판을 처리하는 처리실과,
상기 처리실 내에 산소 함유 가스를 공급하는 산소 함유 가스 공급 라인과,
상기 처리실 내에 수소 함유 가스를 공급하는 수소 함유 가스 공급 라인과,
상기 처리실 내를 배기하는 배기 라인과,
상기 배기 라인에 접속되고, 상기 처리실 내를 진공 배기하는 진공 펌프와,
표면에 적어도 금속원자를 포함하지 않고 실리콘 원자를 포함하는 층과, 금속원자를 포함하는 층이 노출하고 있는 기판을 상기 상기 처리실 내에 수용한 상태에서, 상기 처리실 내의 온도를 600℃이상으로 하고, 상기 처리실 내의 압력을 제1 압력으로서 상기 처리실 내에 상기 수소 함유 가스를 선행하여 도입하고, 이어서 상기 처리실 내의 압력을 제2 압력으로서 상기 처리실 내로의 상기 수소 함유 가스의 도입을 유지한 상태에서 상기 처리실 내에 상기 산소 함유 가스를 도입하여 상기 기판 표면을 산화 처리하도록 하고, 상기 제1 압력을 상기 제2 압력보다도 크게 함과 동시에, 상기 제2 압력을 1333Pa이하로 하여, 산소 함유 가스의 유량 A에 대한 수소 함유 가스의 유량 B의 유량비 B/A를 2 이상이 되도록 제어하는 콘트롤러
를 포함하는 기판 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-064475 | 2005-03-08 | ||
JP2005064475 | 2005-03-08 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097005917A Division KR100966086B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100028663A true KR20100028663A (ko) | 2010-03-12 |
KR100994649B1 KR100994649B1 (ko) | 2010-11-16 |
Family
ID=36953346
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020107010998A KR101002945B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020107002352A KR100982996B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020097005917A KR100966086B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020077019513A KR100909697B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조방법 및 기판처리장치 |
KR1020107002353A KR100994649B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020107010998A KR101002945B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020107002352A KR100982996B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020097005917A KR100966086B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조 방법 및 기판처리장치 |
KR1020077019513A KR100909697B1 (ko) | 2005-03-08 | 2006-03-08 | 반도체장치의 제조방법 및 기판처리장치 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7713883B2 (ko) |
JP (3) | JP4672007B2 (ko) |
KR (5) | KR101002945B1 (ko) |
TW (1) | TW200705552A (ko) |
WO (1) | WO2006095752A1 (ko) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP4943047B2 (ja) * | 2006-04-07 | 2012-05-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP2008186865A (ja) * | 2007-01-26 | 2008-08-14 | Tokyo Electron Ltd | 基板処理装置 |
JP4611414B2 (ja) | 2007-12-26 | 2011-01-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP5575582B2 (ja) * | 2007-12-26 | 2014-08-20 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP5383332B2 (ja) * | 2008-08-06 | 2014-01-08 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
JP5665289B2 (ja) * | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
US20110001179A1 (en) * | 2009-07-03 | 2011-01-06 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
CN105256276B (zh) * | 2010-06-10 | 2018-10-26 | 应用材料公司 | 具有增强的离子化和rf 功率耦合的低电阻率钨pvd |
JP5686487B2 (ja) * | 2011-06-03 | 2015-03-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
WO2013122874A1 (en) * | 2012-02-13 | 2013-08-22 | Applied Materials, Inc. | Methods and apparatus for selective oxidation of a substrate |
JP6091932B2 (ja) * | 2012-03-22 | 2017-03-08 | 株式会社ニューフレアテクノロジー | 炭化珪素の成膜装置および炭化珪素の成膜方法 |
US20140034632A1 (en) * | 2012-08-01 | 2014-02-06 | Heng Pan | Apparatus and method for selective oxidation at lower temperature using remote plasma source |
JP6196106B2 (ja) * | 2013-09-13 | 2017-09-13 | 東京エレクトロン株式会社 | シリコン酸化膜の製造方法 |
JP6380063B2 (ja) * | 2014-12-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、および、気相成長装置 |
JP6573578B2 (ja) | 2016-05-31 | 2019-09-11 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
WO2018055724A1 (ja) * | 2016-09-23 | 2018-03-29 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7345245B2 (ja) * | 2018-11-13 | 2023-09-15 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
TW202107528A (zh) * | 2019-04-30 | 2021-02-16 | 美商得昇科技股份有限公司 | 氫氣輔助的大氣自由基氧化 |
KR20230090855A (ko) * | 2021-12-15 | 2023-06-22 | 주식회사 원익아이피에스 | 기판처리방법 |
US20230215737A1 (en) * | 2021-12-31 | 2023-07-06 | Texas Instruments Incorporated | Method of annealing out silicon defectivity |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132136A (ja) * | 1983-01-19 | 1984-07-30 | Hitachi Ltd | 半導体装置の製造方法 |
JP2902012B2 (ja) * | 1989-10-27 | 1999-06-07 | 国際電気株式会社 | 低圧酸化装置 |
JP3541846B2 (ja) * | 1992-05-22 | 2004-07-14 | 松下電器産業株式会社 | 半導体製造装置 |
JP3207943B2 (ja) * | 1992-11-17 | 2001-09-10 | 忠弘 大見 | 低温酸化膜形成装置および低温酸化膜形成方法 |
JP3310386B2 (ja) * | 1993-05-25 | 2002-08-05 | 忠弘 大見 | 絶縁酸化膜の形成方法及び半導体装置 |
KR100310461B1 (ko) * | 1994-12-20 | 2001-12-15 | 박종섭 | 실리콘산화막의형성방법 |
JPH10335652A (ja) * | 1997-05-30 | 1998-12-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH10340909A (ja) | 1997-06-06 | 1998-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
WO1999003141A1 (en) * | 1997-07-11 | 1999-01-21 | Applied Materials, Inc. | Method and apparatus for in situ vapor generation |
JP3156680B2 (ja) * | 1998-10-13 | 2001-04-16 | 日本電気株式会社 | 半導体装置の製造方法 |
JP2000211998A (ja) * | 1999-01-25 | 2000-08-02 | Angstrom Technology Partnership | シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法 |
NL1013667C2 (nl) * | 1999-11-25 | 2000-12-15 | Asm Int | Werkwijze en inrichting voor het vormen van een oxidelaag op wafers vervaardigd uit halfgeleidermateriaal. |
US20010037237A1 (en) * | 2000-04-28 | 2001-11-01 | Fujitsu Limited | Sales promotion controlling system based on direct mail, server thereof , method thereof, and computer readable record medium thereof |
JP3436256B2 (ja) * | 2000-05-02 | 2003-08-11 | 東京エレクトロン株式会社 | 被処理体の酸化方法及び酸化装置 |
JP2002110667A (ja) | 2000-09-29 | 2002-04-12 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
JP2002176051A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
DE10119741B4 (de) * | 2001-04-23 | 2012-01-19 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten |
JP2002353214A (ja) * | 2001-05-24 | 2002-12-06 | Nec Corp | 半導体装置の製造方法 |
JP2002353210A (ja) * | 2001-05-25 | 2002-12-06 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
JP2003086792A (ja) * | 2001-09-10 | 2003-03-20 | National Institute Of Advanced Industrial & Technology | 半導体装置の作製法 |
TW200416772A (en) * | 2002-06-06 | 2004-09-01 | Asml Us Inc | System and method for hydrogen-rich selective oxidation |
US6916744B2 (en) * | 2002-12-19 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for planarization of a material by growing a sacrificial film with customized thickness profile |
JP2003338623A (ja) * | 2003-04-18 | 2003-11-28 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2004172623A (ja) * | 2003-11-17 | 2004-06-17 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
KR100591762B1 (ko) * | 2004-01-19 | 2006-06-22 | 삼성전자주식회사 | 증착 장치 및 증착 방법 |
JP4706260B2 (ja) * | 2004-02-25 | 2011-06-22 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
US7906440B2 (en) * | 2005-02-01 | 2011-03-15 | Tokyo Electron Limited | Semiconductor device manufacturing method and plasma oxidation method |
-
2006
- 2006-03-08 US US11/885,869 patent/US7713883B2/en active Active
- 2006-03-08 JP JP2007507138A patent/JP4672007B2/ja active Active
- 2006-03-08 KR KR1020107010998A patent/KR101002945B1/ko active IP Right Grant
- 2006-03-08 KR KR1020107002352A patent/KR100982996B1/ko active IP Right Grant
- 2006-03-08 KR KR1020097005917A patent/KR100966086B1/ko active IP Right Grant
- 2006-03-08 KR KR1020077019513A patent/KR100909697B1/ko active IP Right Grant
- 2006-03-08 WO PCT/JP2006/304429 patent/WO2006095752A1/ja active Application Filing
- 2006-03-08 KR KR1020107002353A patent/KR100994649B1/ko active IP Right Grant
- 2006-03-08 TW TW095107720A patent/TW200705552A/zh unknown
-
2010
- 2010-02-03 US US12/656,566 patent/US20100192855A1/en not_active Abandoned
- 2010-08-02 JP JP2010173284A patent/JP5399996B2/ja active Active
- 2010-11-16 JP JP2010255766A patent/JP5325363B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TWI342585B (ko) | 2011-05-21 |
KR100982996B1 (ko) | 2010-09-17 |
KR20100018110A (ko) | 2010-02-16 |
JP2011003915A (ja) | 2011-01-06 |
JPWO2006095752A1 (ja) | 2008-08-14 |
TW200705552A (en) | 2007-02-01 |
KR100909697B1 (ko) | 2009-07-29 |
US7713883B2 (en) | 2010-05-11 |
US20080124943A1 (en) | 2008-05-29 |
KR100966086B1 (ko) | 2010-06-28 |
JP4672007B2 (ja) | 2011-04-20 |
JP2011077534A (ja) | 2011-04-14 |
JP5325363B2 (ja) | 2013-10-23 |
KR101002945B1 (ko) | 2010-12-21 |
KR20090033923A (ko) | 2009-04-06 |
JP5399996B2 (ja) | 2014-01-29 |
KR20100057101A (ko) | 2010-05-28 |
KR20070098952A (ko) | 2007-10-05 |
US20100192855A1 (en) | 2010-08-05 |
WO2006095752A1 (ja) | 2006-09-14 |
KR100994649B1 (ko) | 2010-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100994649B1 (ko) | 반도체장치의 제조 방법 및 기판처리장치 | |
US9117661B2 (en) | Method of improving oxide growth rate of selective oxidation processes | |
KR100919076B1 (ko) | 피처리체의 산화 방법 및 산화 장치 | |
JP5599623B2 (ja) | 堆積チャンバにおける酸化からの導電体の保護 | |
JP2010087167A (ja) | 半導体装置の製造方法 | |
JPWO2019003662A1 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
JP2006351582A (ja) | 半導体装置の製造方法及び基板処理装置 | |
US20080227267A1 (en) | Stop mechanism for trench reshaping process | |
JPH11135492A (ja) | シリコン酸化膜の形成方法及びシリコン酸化膜形成装置 | |
KR100342862B1 (ko) | 반도체장치의적층구조게이트형성방법 | |
JP2023146756A (ja) | 基板処理方法、及び基板処理装置 | |
JPH1116901A (ja) | シリコン酸化膜の形成方法 | |
JPH06124893A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131022 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141021 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151016 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161020 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171018 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181023 Year of fee payment: 9 |