KR100856516B1 - 캐리어 내의 반도체 웨이퍼를 양면 가공하는 방법 - Google Patents
캐리어 내의 반도체 웨이퍼를 양면 가공하는 방법 Download PDFInfo
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- KR100856516B1 KR100856516B1 KR1020060067918A KR20060067918A KR100856516B1 KR 100856516 B1 KR100856516 B1 KR 100856516B1 KR 1020060067918 A KR1020060067918 A KR 1020060067918A KR 20060067918 A KR20060067918 A KR 20060067918A KR 100856516 B1 KR100856516 B1 KR 100856516B1
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- South Korea
- Prior art keywords
- semiconductor wafer
- carrier
- thickness
- inlay
- carrier body
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000003754 machining Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 81
- 239000000969 carrier Substances 0.000 claims description 13
- 238000003672 processing method Methods 0.000 claims 2
- 238000005498 polishing Methods 0.000 abstract description 33
- 230000007717 exclusion Effects 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 5
- 239000004744 fabric Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
타입 | dLSK | dE | dLSK-dE | dZ-dLSK | SFQRmax 2 | SFQRmax 1 | GBIR | |
[㎛] | [㎛] | [㎛] | [㎛] | [nm] | [nm] | [㎛] | ||
C1 | 1 | 769 | 770 | -1 | -1.7 | 83 | 101 | 1.03±0.13 |
C2 | 1 | 769 | 768 | 1 | -1.1 | 63 | 82 | 0.75±0.06 |
C3 | 1 | 769 | 768 | 1 | +3.8 | 50 | 72 | 0.52±0.03 |
E1 | 2 | 769 | 717 | 52 | -3.0 | 42 | 82 | 0.75±0.06 |
E2 | 2 | 769 | 717 | 52 | -2.1 | 44 | 72 | 0.51±0.06 |
E3 | 2 | 769 | 717 | 52 | -0.1 | 48 | 103 | 0.35±0.03 |
C4 | 2 | 769 | 717 | 52 | +3.3 | 58 | 146 | 0.38±0.03 |
E4 | 3 | 773 | 724 | 49 | -4.8 | 45 | 114 | 0.77±0.04 |
E5 | 3 | 773 | 724 | 49 | -4.0 | 42 | 112 | 0.57±0.02 |
C5 | 3 | 773 | 730 | 43 | -7.0 | 57 | -- | 0.80±0.04 |
C6 | 3 | 773 | 730 | 43 | -8.0 | 61 | -- | 0.73±0.03 |
Claims (15)
- 반도체 웨이퍼를 캐리어의 컷아웃(cutout) 내에 탑재하여 안내하는 단계;상기 반도체 웨이퍼의 전면과 후면으로부터 동시에 재료를 제거함으로써 상기 반도체 웨이퍼의 두께를 목표 두께로 감소시키는 단계; 및상기 반도체 웨이퍼의 두께가 상기 캐리어의 본체보다 얇고, 상기 캐리어의 인레이(inlay)보다는 두꺼워질 때까지 상기 반도체 웨이퍼를 가공하는 단계를 포함하며,상기 캐리어의 상기 컷아웃은, 상기 반도체 웨이퍼를 보호하는 상기 인레이의 외주에 형성되는 것을 특징으로 하는반도체 웨이퍼의 가공 방법.
- 제1항에 있어서,상기 반도체 웨이퍼의 목표 두께와 상기 캐리어 본체의 두께의 차("상기 반도체 웨이퍼의 목표 두께"에서 "상기 캐리어 본체의 두께"를 뺀 값)가 0 ㎛ 미만 내지 -6 ㎛의 값이 될 때까지 상기 반도체 웨이퍼를 가공하는 단계를 더 포함하는 것을 특징으로 하는 반도체 웨이퍼의 가공 방법.
- 제1항 또는 제2항에 있어서,상기 반도체 웨이퍼의 두께의 감소분이 5 ㎛ 이상이 될 때까지 상기 반도체 웨이퍼를 가공하는 단계를 더 포함하는 것을 특징으로 하는 반도체 웨이퍼의 가공 방법.
- 제1항 또는 제2항에 있어서,일련의 캐리어들(a set of carriers)을 이용하여 상기 반도체 웨이퍼를 다른 반도체 웨이퍼와 함께 가공하는 단계를 더 포함하며,상기 캐리어들의 본체들 간의 두께 편차가 3 ㎛ 이하인 정도로 상기 일련의 캐리어들의 본체 두께는 균일한 것을 특징으로 하는 반도체 웨이퍼의 가공 방법.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005034119.5 | 2005-07-21 | ||
DE102005034119A DE102005034119B3 (de) | 2005-07-21 | 2005-07-21 | Verfahren zum Bearbeiten einer Halbleiterscheibe, die in einer Aussparung einer Läuferscheibe geführt wird |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070012230A KR20070012230A (ko) | 2007-01-25 |
KR100856516B1 true KR100856516B1 (ko) | 2008-09-04 |
Family
ID=37402214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060067918A KR100856516B1 (ko) | 2005-07-21 | 2006-07-20 | 캐리어 내의 반도체 웨이퍼를 양면 가공하는 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7541287B2 (ko) |
JP (1) | JP4395495B2 (ko) |
KR (1) | KR100856516B1 (ko) |
CN (1) | CN100511598C (ko) |
DE (1) | DE102005034119B3 (ko) |
SG (1) | SG129396A1 (ko) |
TW (1) | TWI330866B (ko) |
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JP5076723B2 (ja) | 2007-08-09 | 2012-11-21 | 富士通株式会社 | 研磨装置、基板及び電子機器の製造方法 |
KR100898821B1 (ko) * | 2007-11-29 | 2009-05-22 | 주식회사 실트론 | 웨이퍼 캐리어의 제조방법 |
JP4858507B2 (ja) * | 2008-07-31 | 2012-01-18 | トーカロ株式会社 | 被研磨物保持用キャリア |
JP2010036288A (ja) * | 2008-08-01 | 2010-02-18 | Sumco Techxiv株式会社 | 研磨用治具 |
KR101026574B1 (ko) * | 2009-01-08 | 2011-03-31 | 주식회사 엘지실트론 | 양면 연마 장치용 캐리어와 프레이트 및 이를 이용한 양면 연마 장치 |
DE102009022223A1 (de) | 2009-05-20 | 2010-11-25 | Siltronic Ag | Verfahren zur Bildung eines Läuferscheibensatzes |
JP5452984B2 (ja) * | 2009-06-03 | 2014-03-26 | 不二越機械工業株式会社 | ウェーハの両面研磨方法 |
DE102009025243B4 (de) * | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
JP5233888B2 (ja) * | 2009-07-21 | 2013-07-10 | 信越半導体株式会社 | 両面研磨装置用キャリアの製造方法、両面研磨装置用キャリア及びウェーハの両面研磨方法 |
US8952496B2 (en) * | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
TWI465317B (zh) * | 2012-06-25 | 2014-12-21 | Sumco Corp | 工作件的硏磨方法及工作件的硏磨裝置 |
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DE102013218880A1 (de) * | 2012-11-20 | 2014-05-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe |
JP6206942B2 (ja) * | 2012-12-28 | 2017-10-04 | 株式会社グローバルアイ | 円盤状キャリア |
DE102013200756A1 (de) | 2013-01-18 | 2014-08-07 | Siltronic Ag | Läuferscheibe für die beidseitige Politur von Scheiben aus Halbleitermaterial |
JP2014188668A (ja) * | 2013-03-28 | 2014-10-06 | Hoya Corp | ガラス基板の製造方法 |
US10354905B2 (en) * | 2015-03-11 | 2019-07-16 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
JP6443370B2 (ja) * | 2016-03-18 | 2018-12-26 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
WO2017171052A1 (ja) * | 2016-03-31 | 2017-10-05 | Hoya株式会社 | キャリアおよび当該キャリアを用いた基板の製造方法 |
CN107127674B (zh) * | 2017-07-08 | 2021-01-08 | 上海致领半导体科技发展有限公司 | 一种用于半导体晶片抛光的陶瓷载盘 |
CN108682613B (zh) * | 2018-03-29 | 2021-02-26 | 广东先导先进材料股份有限公司 | 半导体晶片的处理方法 |
KR102131443B1 (ko) * | 2018-10-04 | 2020-07-08 | 주식회사 이포스 | 연마장치용 캐리어 |
CN110193775B (zh) * | 2019-03-12 | 2021-09-17 | 上海新昇半导体科技有限公司 | 化学机械抛光方法以及化学抛光系统 |
CN111993267A (zh) * | 2019-05-27 | 2020-11-27 | 创技股份有限公司 | 工件游星轮及工件游星轮的制造方法 |
CN113510614A (zh) * | 2021-08-03 | 2021-10-19 | 菲特晶(南京)电子有限公司 | 一种双面研磨机用游轮结构 |
CN115990825A (zh) * | 2022-12-27 | 2023-04-21 | 西安奕斯伟材料科技股份有限公司 | 一种硅片双面抛光用的载具、双面抛光装置及硅片 |
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2005
- 2005-07-21 DE DE102005034119A patent/DE102005034119B3/de active Active
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2006
- 2006-07-13 JP JP2006193159A patent/JP4395495B2/ja active Active
- 2006-07-17 SG SG200604776A patent/SG129396A1/en unknown
- 2006-07-17 US US11/487,652 patent/US7541287B2/en active Active
- 2006-07-19 TW TW095126442A patent/TWI330866B/zh active
- 2006-07-20 CN CNB2006101061173A patent/CN100511598C/zh active Active
- 2006-07-20 KR KR1020060067918A patent/KR100856516B1/ko active IP Right Grant
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JPH09150366A (ja) * | 1995-11-27 | 1997-06-10 | Shin Etsu Handotai Co Ltd | 両面研磨装置及び方法 |
JP2004047801A (ja) | 2002-07-12 | 2004-02-12 | Sumitomo Mitsubishi Silicon Corp | 半導体ウエーハの研磨方法 |
KR20050055531A (ko) * | 2003-12-08 | 2005-06-13 | 주식회사 실트론 | 웨이퍼 연마 방법 |
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TWI330866B (en) | 2010-09-21 |
DE102005034119B3 (de) | 2006-12-07 |
CN1901142A (zh) | 2007-01-24 |
SG129396A1 (en) | 2007-02-26 |
JP4395495B2 (ja) | 2010-01-06 |
US20070021042A1 (en) | 2007-01-25 |
JP2007036225A (ja) | 2007-02-08 |
US7541287B2 (en) | 2009-06-02 |
CN100511598C (zh) | 2009-07-08 |
TW200705562A (en) | 2007-02-01 |
KR20070012230A (ko) | 2007-01-25 |
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