KR100814205B1 - 전자 부품, 유전체 자기 조성물 및 그 제조 방법 - Google Patents
전자 부품, 유전체 자기 조성물 및 그 제조 방법 Download PDFInfo
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- KR100814205B1 KR100814205B1 KR1020060030177A KR20060030177A KR100814205B1 KR 100814205 B1 KR100814205 B1 KR 100814205B1 KR 1020060030177 A KR1020060030177 A KR 1020060030177A KR 20060030177 A KR20060030177 A KR 20060030177A KR 100814205 B1 KR100814205 B1 KR 100814205B1
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Abstract
Description
Claims (7)
- 티탄산 바륨을 포함하는 주성분과,MgO, CaO, BaO 및 SrO에서 선택되는 적어도 1종을 포함하는 제1 부성분과,Al2O3를 적어도 포함하는 제2 부성분과,V2O5, MoO3 및 WO3에서 선택되는 적어도 1종을 포함하는 제3 부성분과,R1의 산화물(단, R1은 Sc, Er, Tm, Yb 및 Lu에서 선택되는 적어도 1종)을 포함하는 제4 부성분과,CaZrO3 또는 CaO + ZrO2을 포함하는 제5 부성분을 적어도 갖는 유전체 자기 조성물로서,상기 주성분 100몰에 대한 각 부성분의 비율이,제1 부성분 : 0.1∼3몰,제2 부성분 : 2몰 초과 10몰 미만(단, 제2 부성분의 몰수는, Al 원소 환산에서의 비율이다),제3 부성분 : 0.01∼0.5몰,제4 부성분 : 0.5∼7몰(단, 제4 부성분의 몰수는, R1 단독에서의 비율이다),제5 부성분 : 0 < 제5 부성분 ≤ 5몰인 유전체 자기 조성물.
- 티탄산 바륨을 포함하는 주성분과,MgO, CaO, BaO 및 SrO에서 선택되는 적어도 1종을 포함하는 제1 부성분과,Li2O 및 B2O3 에서 선택되는 적어도 1종을 포함하는 제2 부성분과,V2O5, MoO3 및 WO3에서 선택되는 적어도 1종을 포함하는 제3 부성분과,R1의 산화물(단, R1은 Sc, Er, Tm, Yb 및 Lu에서 선택되는 적어도 1종)을 포함하는 제4 부성분과,CaZrO3 또는 CaO + ZrO2을 포함하는 제5 부성분을 적어도 갖는 유전체 자기 조성물로서,상기 주성분 100몰에 대한 각 부성분의 비율이,제1 부성분 : 0.1∼3몰,제2 부성분 : 3~5몰(단, 제2 부성분의 몰수는, Li 또는 B 원소 환산에서의 비율이다),제3 부성분 : 0.01∼0.5몰,제4 부성분 : 0.5∼7몰(단, 제4 부성분의 몰수는, R1 단독에서의 비율이다),제5 부성분 : 0 < 제5 부성분 ≤ 5몰인 유전체 자기 조성물.
- 청구항 1 또는 2에 있어서, 제6 부성분으로서, R2의 산화물(단, R2는 Y, Dy, Ho, Tb, Gd 및 Eu에서 선택되는 적어도 1종)을 더 갖고,상기 제6 부성분의 함유량이, 상기 주성분 100몰에 대해, 9몰 이하(단, 제6 부성분의 몰수는, R2 단독에서의 비율이다)인 유전체 자기 조성물.
- 청구항 1 또는 2에 있어서, 제7 부성분으로서, MnO 또는 Cr2O3를 더 갖고, 상기 제7 부성분의 함유량이, 상기 주성분 100몰에 대해, 0.5몰 이하(단, Mn 또는 Cr 원소 환산에서의 비율이다)인 유전체 자기 조성물.
- 청구항 1 또는 2에 기재된 유전체 자기 조성물을 제조하는 방법으로서,소성 후에 상기 유전체 자기 조성물이 되는 유전체 원료를 소성하고, 그 후, 1000∼1400℃에서 어닐링 처리를 하는 유전체 자기 조성물의 제조 방법.
- 청구항 1 또는 2에 기재된 유전체 자기 조성물로 구성되어 있는 유전체층을 갖는 전자 부품.
- 청구항 1 또는 2에 기재된 유전체 자기 조성물로 구성되어 있는 유전체층과, 내부 전극층이 교대로 적층되어 있는 콘덴서 소자 본체를 갖는 적층 세라믹 콘덴서.
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DE112009002221B4 (de) * | 2008-09-24 | 2013-07-18 | Murata Manufacturing Co., Ltd. | Dielektrische Keramikzusammensetzung und monolithischer Keramikkondensator |
JP5225241B2 (ja) * | 2009-09-24 | 2013-07-03 | 株式会社村田製作所 | 積層セラミック電子部品 |
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JP2001172076A (ja) | 1999-10-05 | 2001-06-26 | Tdk Corp | 誘電体磁器組成物の製造方法 |
JP2001192264A (ja) | 1999-10-19 | 2001-07-17 | Tdk Corp | 誘電体磁器組成物および電子部品 |
JP2003192432A (ja) | 2002-09-27 | 2003-07-09 | Tdk Corp | 誘電体磁器組成物および電子部品 |
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DE602006008057D1 (de) | 2009-09-10 |
US7307828B2 (en) | 2007-12-11 |
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JP2006282482A (ja) | 2006-10-19 |
JP4483659B2 (ja) | 2010-06-16 |
CN100434393C (zh) | 2008-11-19 |
EP1710817B1 (en) | 2009-07-29 |
US20060232911A1 (en) | 2006-10-19 |
EP1710817A3 (en) | 2007-11-07 |
TWI290544B (en) | 2007-12-01 |
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ATE438191T1 (de) | 2009-08-15 |
CN1847194A (zh) | 2006-10-18 |
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