TWI592961B - 積層陶瓷電容器 - Google Patents
積層陶瓷電容器 Download PDFInfo
- Publication number
- TWI592961B TWI592961B TW101109970A TW101109970A TWI592961B TW I592961 B TWI592961 B TW I592961B TW 101109970 A TW101109970 A TW 101109970A TW 101109970 A TW101109970 A TW 101109970A TW I592961 B TWI592961 B TW I592961B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric
- ceramic capacitor
- temperature
- layer
- ceramic
- Prior art date
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims description 56
- 239000000919 ceramic Substances 0.000 claims description 46
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 25
- 229910002113 barium titanate Inorganic materials 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 11
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 20
- 239000000654 additive Substances 0.000 description 13
- 230000000996 additive effect Effects 0.000 description 13
- 239000000843 powder Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000001509 sodium citrate Substances 0.000 description 9
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 9
- 229910000420 cerium oxide Inorganic materials 0.000 description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 8
- 229910052712 strontium Inorganic materials 0.000 description 7
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000000498 ball milling Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 210000002257 embryonic structure Anatomy 0.000 description 3
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- -1 bismuth citrate compound Chemical class 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000003966 growth inhibitor Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910052917 strontium silicate Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/248—Terminals the terminals embracing or surrounding the capacitive element, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
- C04B2235/3203—Lithium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
- C04B2235/3234—Titanates, not containing zirconia
- C04B2235/3236—Alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
- C04B2235/3255—Niobates or tantalates, e.g. silver niobate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
本發明關於一種積層陶瓷電容器(multilayer ceramic capacitor,MLCC)所使用的介電陶瓷層,特別是關於一種以鈦酸鋇介電材料為主,選擇添加居禮溫度較高的介電材料作為次要成分,來使元件有更廣的使用範圍及穩定性。
積層陶瓷電容是目前電子產品中,常用的電容器,應用產品包括PC、手機、車用電子元件等。以積層陶瓷電容之材料結構來看,主要分為介電陶瓷體與內外電極兩方面。其中,介電陶瓷體以鈦酸鋇為主要原料,外加各種添加材料後形成NPO、COG、Y5V、X7R、X8R、Z5U等種類,依電氣特性應用也各不相同,介電陶瓷體決定積層陶瓷電容的特性。
由於X8R積層陶瓷電容擁有良好的介電溫度穩定特性(-55至150℃,△C/C≦15%),已被廣泛應用於溫度變化較大的微型化電子元件中。但在某些汽車電子元件,比如:引擎電子控制裝置(ECU)、防煞車鎖死系統(ABS)及燃料供給程式系統(PGMFI)等系統,需要在較為嚴苛的環境條件下運作,因此,積層陶瓷電容要應用於此類環境中時,所需具有平穩且大溫度範圍之介電特性。隨著科技的進步,以及基於安全上的考量,開發符合電子工業協會標準中X9R規範(-55至200℃,△C/C≦15%),甚至是可應用於更大溫度範圍的介電材料已成為必然之趨勢。
由於鈦酸鋇具有很高的介電常數,目前在X8R積層陶瓷電容器的開發上,介電陶瓷體的材料也多以鈦酸鋇為主。但鈦酸鋇在居禮溫度(Tc)時,其晶體結構會由強電性的正方晶相(tetragonal)轉變為順電性的立方晶相(Cubic),在此溫度會有介電峰值出現,而影響介電溫度穩定性。鈦酸鋇之居禮溫度大約130℃左右。因此,以鈦酸鋇為主的介電陶瓷材料會藉由添加各種居禮點遷移劑、晶粒成長抑制劑及燒結促進劑等,來提升材料的介電溫度穩定性。
美國公開專利7,821,770揭示一種積層陶瓷電容,符合X8R特性,且在高溫的環境下具有高穩定性。其所使用的介電陶瓷材料的組成以100mol鈦酸鋇(BaTiO3)添加0.4至3.0mol氧化鎂(MgO)、6.0至16.5mol稀土族氧化物(ReO3/2)、3至5mol的氧化矽(SiO2)及0.05至0.4mol的金屬氧化物(MOx),其中稀土族氧化物可以選擇釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)及釔(Y)的氧化物;金屬氧化物可以選擇釩(V)、鉻(Cr)、錳(Mn)的氧化物。
另一美國公開專利7,541,306同樣揭示一種積層陶瓷電容可以符合X8R之要求。其介電陶瓷材料同樣以鈦酸鋇為主,添加其他金屬氧化物,如:氧化鋇、氧化釔、氧化鋯、氧化矽、氧化鎂、氧化錳、氧化鉬、氧化鈣、氧化鎦、氧化鐿或氧化鎢。
而美國公開專利7,751,178揭示一種介電陶瓷材料,可以讓積層陶瓷電容的穩定性提昇至符合X8R
(-55至150℃,△C/C≦15%)之要求。其所揭示的介電材料以一鈣鈦礦結構之化合物為主體,所述化合物之化學式為(Ba1-x-yCaxSny)m(Ti1-zZrz)O3,其中,0.1≦x≦0.2,0.02≦y≦0.2,0≦z≦0.05,0.99≦m≦1.015,再以稀土族元素作為添加物。每100mole的化合物添加0.5至20mole,添加物可以選自鑭(La)、鈰(Ce)、鐠(Pr)、釹(Nd)、釤(Sm)、銪(Eu)、釓(Gd)、鋱(Tb)、鏑(Dy)、鈥(Ho)、鉺(Er)、銩(Tm)、鐿(Yb)、鎦(Lu)及釔(Y)等。
但隨著科技發展的日新月異,元件對於材料的要求也會隨之提高,若積層陶瓷電容可以適用於更廣的溫度範圍,可以擴大其產業利用性。
本發明之目的即在於提供一種陶瓷電容體,可以應用於積層陶瓷電容中,且可符合EIA之X9R規範,並可搭配卑金屬電極(Base-Metal-Electrode,BME)製程或貴金屬電極(Noble-Metal Electrode,NME)製程製備。介電陶瓷層的組成以鈦酸鋇(BaTiO3)為主,並添加高居禮溫度之添加物,其中,添加物之莫耳百分比約1至50%,且添加物的居禮溫度(Curie temperature)大於200℃。所述的添加物選自鉭酸鋰(LiTaO3)、鈰酸鋇(BaCeO3)、鈮酸鈉(NaNbO3)及其任意組合所組成的群組其中之一種。
本發明之另一目的係提供一種積層陶瓷電容器,一陶瓷電容體,包含複數層介電陶瓷層,以及沿著該些介電陶瓷層之表面形成之複數層內部陰極層及內部
陽極層,其中,介電陶瓷層使用上述之介電陶瓷材料燒結而成,內部陰極層及內部陽極層相互交錯排列;一外部陰極;及一外部陽極,其中,外部陰極及外部陽極形成於電容陶瓷體外,並分別與該些內部陰極層及內部陽極層電性連接。其中,製成之積層陶瓷電容器之電容溫度係數符合X9R溫度範圍,亦即在溫度範圍於-55℃~200℃之間,其相對電容值變化量小於15%。
本發明所提供之陶瓷電容體,皆在還原氣氛下燒結,可以與現有積層陶瓷電容之卑金屬電極製程整合,便於市場上開發利用。積層陶瓷電容應用此種介電陶瓷層時,其介電特性對溫度之穩定性可以符合X8R及X9R之規範,適用於溫度變化較大的電子元件中。
為使本發明之上述目的、特徵和優點能更明顯易懂,下文依本發明之陶瓷電容體的介電陶瓷層及其製備粉末之組成,特舉較佳實施例,並配合所附相關圖式,作詳細說明如下。
本發明之陶瓷電容體之介電陶瓷層組成以鈦酸鋇(BaTiO3)為主,並添加高居禮溫度之添加物。本發明實施例中所使用的添加物居禮溫度(Curie temperature;Tc)至少大於200℃,最好大於300℃,使主材料鈦酸鋇的居禮溫度能夠往高溫移動。並且,添加物同樣是具有高介電常數的陶瓷材料,以免使介電陶瓷材料整體的介電常數太低。添加物的莫耳百分比約1至50%,以和鈦酸鋇形成複合
相,較佳實施例為5至50%。
在本發明較佳實施例中,添加物選自鉭酸鋰(LiTaO3)、鈰酸鋇(BaCeO3)、鈮酸鈉(NaNbO3)及其任意組合所組成的群組其中之一種。前述材料之居禮溫度皆大於300℃,和鈦酸鋇混合形成複合相之後,可以使整體陶瓷電容體之介電陶瓷層的居禮溫度提高於130℃以上。
本發明之陶瓷電容體主要可應用於積層陶瓷電容元件,使其介電溫度穩定性符合EIA之X8R或X9R規範。
在一較佳實施例中,添加物為莫耳百分比1至50%的鉭酸鋰(LiTaO3)、鈰酸鋇(BaCeO3)或鈮酸鈉(NaNbO3)。
本發明並以鈦酸鋇添加鉭酸鋰(LiTaO3),及鈦酸鋇添加鈮酸鈉(NaNbO3)為例,來詳述製備陶瓷電容體的介電陶瓷層之流程,及電性量測結果。
首先,鈦酸鋇添加鉭酸鋰(LiTaO3)時,使用鈦酸鋇添加0.5至25莫耳百分比碳酸鋰(Li2CO3)及氧化鉭(Ta2O5)製備(1-x)(BaTiO3)-x(LiTaO3)之初始粉末,亦可將碳酸鋰及氧化鉭先行合成鉭酸鋰(LiTaO3)化合物再與鈦酸鋇進行混合。在另一較佳實施例中,係添加碳酸鋇(BaCO3)及氧化鈰(CeO2),依莫耳百分比分別約1至50%,亦可先行合成鈰酸鋇化合物,以1至50莫爾百分比與鈦酸鋇進行混合製備(1-x)(BaTiO3)-x(BaCeO3)之初始粉末。在又一較佳實施例中,以相同工法混合鈮酸鈉(NaNbO3),莫耳百分比約1至5
0莫爾百分比,製備(1-x)(BaTiO3)-x(NaNbO3)之初始粉末。
請參照下表1,即為本發明中用來製備陶瓷電容體之介電陶瓷層的粉末組成之不同實施例:
請參照圖1,為本發明之陶瓷電容體的介電陶瓷層之製程步驟,但製備方法不需特別限定,具有通常知識者所能了解之陶瓷製程,皆可用來製備本發明之陶瓷電容體的介電陶瓷層。本發明實施例中,以鈦酸鋇添加鉭酸鋰為例。首先將鈦酸鋇、碳酸鋰(LiCO3)及氧化鉭(Ta2O5)粉末一特定莫耳百分比配比,進行
球磨混合24小時,如步驟S100。
接著,烘乾粉末,及煅燒800℃持溫4小時如步驟S105,在煅燒程序形成所需要的化合物。再進行第二次球磨,如步驟S110。由於煅燒後粉末顆粒較大,經過二次球磨使粉末顆粒變小,在之後的燒結製程中,可以在較低的燒結溫度就達到緻密化的效果。經過了過篩造粒後,將粉體壓錠成型,製作生胚,如步驟S115。
將生胚放置在低溫爐中,於550℃持溫4小時以燒除黏結劑,如步驟S120。之後,如步驟S125,在一還原氣氛下,進行一燒結步驟。所述的還原氣氛所用氣體為N2:H2=97:3,氣體流量每分鐘約0.3公升,露點溫度45℃。而在本實施例中,燒結溫度大約1150℃至1275℃,並持溫約2小時。在燒結製程中,可使介電陶瓷材料達到可應用之緻密程度。
最後,進行一熱處理製程,使介電陶瓷層進行再氧化熱處理,如步驟S130。本實施例之熱處理製程係在1000℃下持溫數小時,以減少介電陶瓷層在還原氣氛下燒結所造成的過多氧空位。其中,持溫的時間會依照所混合的鉭酸鋰之莫耳百分比,以及燒結後,介電陶瓷層的緻密性來調整。
本發明之陶瓷電容體的介電陶瓷層的製備方式,另一實施例是以鈦酸鋇添加鈮酸鈉(NaNbO3)為例。請參照圖2,與前一實施例不同的是,本實施例是僅先將碳酸鈉(Na2CO3)及氧化鈮(Nb2O5)粉末依照特定比例,球磨混合12小時,如步驟S200。接著,再進
行一煅燒製程,以形成欲添加的化合物鈮酸鈉(NaNbO3),如步驟S205。本發明實施例中,煅燒製程是在950℃下持溫約2小時。
形成鈮酸鈉(NaNbO3)化合物之後再與鈦酸鋇粉末混合,球磨24小時,如步驟S210。進行過篩造粒後,將粉體壓錠成型,製作生胚,如步驟S215。接著,將生胚放置在低溫爐中,於550℃持溫4小時以燒除黏結劑,如步驟S220。
在還原氣氛下,進行一燒結步驟,如步驟S225。還原氣氛之條件如同前一實施例,但是在此一實施例中,燒結溫度大約1150℃至1300℃,並持溫至少2小時。最後進行再氧化熱處理製程,如步驟S230,本實施例之熱處理製程是在900℃,持溫約2至10小時。
製備完成之後進行電性量測,請參照圖3A及3B,為本發明實施例中,鈦酸鋇添加鉭酸鋰後的電容溫度係數及介電損耗。由圖3B中,可以看出實施例1~7之介電損失(tanδ)在室溫下皆小於2%。
而圖3A中可以看出,實施例1~3之電容溫度係數皆符合EIA之X8R規範。並且,每提高5mol%鉭酸鋰添加量,電容溫度係數在200℃,約可提高7%。其中,實施例4~7已可符合X9R規範(-55至200℃,△C/C≦15%)。由此趨勢可以推知,當鉭酸鋰添加量繼續增加時,其介電溫度穩定性可符合X9R規範,甚至可達到更大溫度範圍的穩定性。
而實施例1~4所測得之介電常數(k)分別約
1865、1669、1325及1073。可知隨著鉭酸鋰添加量的增加,介電常數值也會往下降,因此添加量最好不超過50mol%。
請參照圖4,為本發明實施例中,鈦酸鋇添加鈮酸鈉後的介電溫度特性。由圖4中可以看出,實施例8~9之介電溫度穩定性能達到X9R之規範,而實施例10則在X9R之出口溫度點(200℃)的電容溫度係數大約16.56%,經過製程改良後,亦可作為X9R陶瓷電容器使用。
而實施例7~9所量測到的介電常數(K)分別為可達到三萬左右,具有很好的電性表現。雖然,在室溫下的介電損失約2%,但已可證明鈦酸鋇在添加此種高居禮溫度之介電材料時,確實可以有效使居禮峰之溫度往高溫移動,並具有良好的介電溫度穩定特性。
本發明之陶瓷電容體的可以應用於一積層陶瓷電容,請參考圖5,為積層陶瓷電容之結構剖面圖。圖中積層陶瓷電容器1,包含一電容陶瓷體10、一外部陰極11、一外部陽極13。
電容陶瓷體10包含複數層介電陶瓷層100,以及沿著介電陶瓷層100之表面形成之複數層內部陰極層101及內部陽極層103,且內部陰極層101及內部陽極層103相互交錯排列,彼此之間以介電陶瓷層100隔開。
外部陰極11及外部陽極13係形成於電容陶瓷體10外,並分別與內部陰極層101及內部陽極層103電性連接。在此應用中,陶瓷電容體所構成之上述之
介電陶瓷層100,係由本發明之陶瓷電容體的介電陶瓷層所燒結而成。
其中,積層陶瓷電容器之介電陶瓷層應用本發明之介電陶瓷材料時,電容溫度係數符合X8R或X9R溫度範圍,亦即在溫度範圍於-55℃~200℃之間,其相對電容值變化量小於15%。
本發明所提供之積層陶瓷電容器及介電陶瓷層,與習知技術所使用之材料相比,具有下列優點:
(1)本發明積層陶瓷電容器之陶瓷電容體的介電陶瓷層由鈦酸鋇添加高居禮溫度的介電材料,形成混合物,可有效使居禮峰向高溫移動(shift)。
(2)本發明積層陶瓷電容器之陶瓷電容體的介電陶瓷層應用於積層陶瓷電容時,可以符合X8R及X9R之規範,甚至超越,足以適用於溫度變化較大的微型化電子元件中。
(3)本發明積層陶瓷電容器之陶瓷電容體的介電陶瓷層皆在還原氣氛下燒結,適用於卑金屬電極製程,可以與現有積層陶瓷電容之製程整合,便於市場上開發利用。
本發明雖以較佳實例闡明如上,然其並非用以限定本發明精神與發明實體僅止於上述實施例。凡熟悉此項技術者,當可輕易了解並利用其它元件或方式來產生相同的功效。是以,在不脫離本發明之精神與範疇內所作之修改,均應包含在下述之申請專利範圍內。
1‧‧‧積層陶瓷電容器
10‧‧‧陶瓷電容體
100‧‧‧介電陶瓷層
101‧‧‧內部陰極層
103‧‧‧內部陽極層
11‧‧‧外部陰極
13‧‧‧外部陽極
圖1 製備本發明陶瓷電容體的介電陶瓷層之實施例流程圖;圖2 製備本發明陶瓷電容體的介電陶瓷層之另一實施例流程圖;圖3A本發明陶瓷電容體的介電陶瓷層實施例1~7之介電溫度穩定性量測圖;圖3B本發明陶瓷電容體的介電陶瓷層實施例1~7之介電損失之量測圖;圖4 本發明陶瓷電容體的介電陶瓷層實施例8~10之介電溫度穩定性量測圖;圖5 積層陶瓷電容器之結構剖面圖。
S100、S105、S110、S115、S120、S125、S130‧‧‧流程步驟
Claims (1)
- 一種積層陶瓷電容器,包含:一陶瓷電容體,包含複數層介電陶瓷層,以及沿著該些介電陶瓷層之表面形成之複數層內部陰極層及內部陽極層,其中,該介電陶瓷層使用以鈦酸鋇(BaTiO3)為主,並添加莫耳百分比1至50%的鉭酸鋰(LiTaO3)之介電陶瓷材料燒結而成,該內部陰極層及該內部陽極層相互交錯排列;一外部陰極;及一外部陽極,其中,該外部陰極及該外部陽極形成於該電容陶瓷體外,並分別與該些內部陰極層及該內部陽極層電性連接。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101109970A TWI592961B (zh) | 2012-03-22 | 2012-03-22 | 積層陶瓷電容器 |
US13/569,616 US9023748B2 (en) | 2012-03-22 | 2012-08-08 | Dielectric ceramic material and multilayer ceramic capacitor using the same |
US14/495,208 US9064635B2 (en) | 2012-03-22 | 2014-09-24 | Dielectric ceramic material and multilayer ceramic capacitor using the same |
US14/577,905 US9365458B2 (en) | 2012-03-22 | 2014-12-19 | Dielectric ceramic material |
US15/152,045 US9708223B2 (en) | 2012-03-22 | 2016-05-11 | Dielectric ceramic material |
US15/468,876 US10155697B2 (en) | 2012-03-22 | 2017-03-24 | Composite dielectric ceramic material having anti-reduction and high temperature stability characteristics and method for preparing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101109970A TWI592961B (zh) | 2012-03-22 | 2012-03-22 | 積層陶瓷電容器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201340146A TW201340146A (zh) | 2013-10-01 |
TWI592961B true TWI592961B (zh) | 2017-07-21 |
Family
ID=49211597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101109970A TWI592961B (zh) | 2012-03-22 | 2012-03-22 | 積層陶瓷電容器 |
Country Status (2)
Country | Link |
---|---|
US (2) | US9023748B2 (zh) |
TW (1) | TWI592961B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9365458B2 (en) | 2012-03-22 | 2016-06-14 | Holy Stone Enterprise Co., Ltd. | Dielectric ceramic material |
US10155697B2 (en) | 2012-03-22 | 2018-12-18 | Holy Stone Enterprise Co., Ltd. | Composite dielectric ceramic material having anti-reduction and high temperature stability characteristics and method for preparing same |
RU2584507C1 (ru) * | 2014-12-19 | 2016-05-20 | Закрытое акционерное общество "Лаборатория Касперского" | Способ обеспечения безопасного выполнения файла сценария |
TWI814730B (zh) | 2017-07-19 | 2023-09-11 | 日商太陽誘電股份有限公司 | 積層陶瓷電容器及其製造方法 |
US11476048B2 (en) * | 2019-07-29 | 2022-10-18 | Samsung Electro-Mechanics Co., Ltd. | Dielectric material and multilayer ceramic capacitor including the same |
CN111825446B (zh) * | 2020-07-03 | 2022-08-12 | 成都宏科电子科技有限公司 | 一种bt-brt复合超低损耗多层瓷介电容器用介质陶瓷材料及其制备方法和应用 |
KR20220052768A (ko) * | 2020-10-21 | 2022-04-28 | 삼성전자주식회사 | 유전체 및 이를 포함하는 소자 |
CN114163231B (zh) * | 2021-11-29 | 2022-12-09 | 华中科技大学 | 无铅脉冲电介质储能复合陶瓷材料及其制备方法和应用 |
CN116803948A (zh) * | 2022-03-16 | 2023-09-26 | 中国科学院上海硅酸盐研究所 | 一种高储能特性的钛酸钡基陶瓷材料及其制备方法和应用 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY133860A (en) * | 1997-02-25 | 2007-11-30 | Tdk Corp | High dielectric- constant dielectric ceramic composition, and its fabrication process |
US6403513B1 (en) * | 1999-07-27 | 2002-06-11 | Tdk Corporation | Dielectric ceramic composition and electronic device |
JP3482394B2 (ja) * | 2000-11-20 | 2003-12-22 | 松下電器産業株式会社 | 圧電磁器組成物 |
CN1197823C (zh) * | 2000-11-21 | 2005-04-20 | Tdk株式会社 | 压电陶瓷 |
US6783588B2 (en) * | 2000-12-15 | 2004-08-31 | Canon Kabushiki Kaisha | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator |
JP4569062B2 (ja) * | 2001-09-07 | 2010-10-27 | Tdk株式会社 | 圧電磁器 |
CN1930102A (zh) * | 2004-03-19 | 2007-03-14 | Tdk股份有限公司 | 叠层型陶瓷电容器 |
JP4483659B2 (ja) * | 2005-04-04 | 2010-06-16 | Tdk株式会社 | 電子部品、誘電体磁器組成物およびその製造方法 |
KR101152453B1 (ko) * | 2006-02-27 | 2012-06-01 | 히타치 긴조쿠 가부시키가이샤 | 반도체 자기 조성물 |
JP5144052B2 (ja) | 2006-10-13 | 2013-02-13 | 太陽誘電株式会社 | 誘電体セラミック組成物、積層セラミックコンデンサ及びその製造方法 |
US20090105064A1 (en) * | 2006-10-27 | 2009-04-23 | Takeshi Shimada | Semiconductor ceramic composition and method for producing the same |
WO2008068999A1 (ja) | 2006-12-05 | 2008-06-12 | Murata Manufacturing Co., Ltd. | 誘電体セラミックおよびそれを用いた積層セラミックコンデンサ |
US7541306B2 (en) | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
US8076257B1 (en) * | 2008-04-23 | 2011-12-13 | MRA Laboratories, Inc | High temperature ceramic dielectric composition and capacitors made from the composition |
JP5330126B2 (ja) * | 2009-07-06 | 2013-10-30 | 株式会社デンソー | セラミックス材料、及びキャパシタ |
-
2012
- 2012-03-22 TW TW101109970A patent/TWI592961B/zh active
- 2012-08-08 US US13/569,616 patent/US9023748B2/en active Active
-
2014
- 2014-09-24 US US14/495,208 patent/US9064635B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201340146A (zh) | 2013-10-01 |
US20150009604A1 (en) | 2015-01-08 |
US9023748B2 (en) | 2015-05-05 |
US9064635B2 (en) | 2015-06-23 |
US20130250482A1 (en) | 2013-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI592961B (zh) | 積層陶瓷電容器 | |
KR100631995B1 (ko) | 저온 소성용 유전체 자기조성물 및 이를 이용한 적층세라믹 콘덴서 | |
CN102531591A (zh) | 具有高介电常数的介电组合物、包括其的多层陶瓷电容器、和多层陶瓷电容器的制备方法 | |
JPWO2007026614A1 (ja) | 誘電体磁器およびその製法、並びに積層セラミックコンデンサ | |
US8335073B2 (en) | Dielectric ceramic composition and ceramic electronic component | |
JP2012072037A (ja) | 誘電体磁器組成物およびその製造方法ならびにセラミック電子部品 | |
JP5668572B2 (ja) | 誘電体磁器組成物およびセラミック電子部品 | |
JP2010285336A (ja) | 誘電物質用焼結物質およびその製造方法、並びにコア−シェル微細構造を有する誘電物質用焼結物質およびその製造方法 | |
JP6467648B2 (ja) | 誘電体組成物、誘電体素子、電子部品および積層電子部品 | |
JP5760890B2 (ja) | 誘電体磁器組成物および電子部品 | |
JP4582973B2 (ja) | 誘電体磁器及び積層型電子部品並びに積層型電子部品の製法 | |
JP5153069B2 (ja) | 誘電体磁器 | |
KR20100094388A (ko) | 유전체 제조용 소결 전구체 분말 및 이의 제조 방법 | |
JP5541318B2 (ja) | 誘電体磁器組成物およびセラミック電子部品 | |
JP2013063876A (ja) | 誘電体磁器組成物および電子部品 | |
KR20140118557A (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 캐패시터 | |
JP2005162557A (ja) | 誘電体磁器組成物の製造方法、誘電体層含有電子部品の製造方法および誘電体層含有電子部品 | |
JP5488118B2 (ja) | 誘電体磁器組成物および電子部品 | |
CN103319167A (zh) | 介电陶瓷材料及其所制成的积层陶瓷电容 | |
JP2005263508A (ja) | 誘電体磁器組成物、積層型セラミックコンデンサ及びその製造方法 | |
TW201727682A (zh) | 陶瓷電容體 | |
JP2002080279A (ja) | 誘電体磁器組成物の製造方法および電子部品の製造方法 | |
JP5834674B2 (ja) | 誘電体磁器組成物および電子部品 | |
JP2005272262A (ja) | 誘電体磁器組成物、積層型セラミックコンデンサ及びその製造方法 | |
KR100875288B1 (ko) | Y5v 특성이 우수한 mlcc용 유전체 조성물 및 그의제조방법 |