KR100767152B1 - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR100767152B1 KR100767152B1 KR1020060065308A KR20060065308A KR100767152B1 KR 100767152 B1 KR100767152 B1 KR 100767152B1 KR 1020060065308 A KR1020060065308 A KR 1020060065308A KR 20060065308 A KR20060065308 A KR 20060065308A KR 100767152 B1 KR100767152 B1 KR 100767152B1
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- South Korea
- Prior art keywords
- conductive layer
- layer
- electrode pad
- semiconductor device
- region
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 239000010410 layer Substances 0.000 claims abstract description 397
- 239000011229 interlayer Substances 0.000 claims abstract description 61
- 230000002787 reinforcement Effects 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 238000009413 insulation Methods 0.000 abstract description 18
- 230000003014 reinforcing effect Effects 0.000 abstract description 13
- -1 reinforcement part Substances 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 29
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (13)
- 반도체층과,상기 반도체층의 상방에 형성되며, 제1 폭을 갖는 제1 도전층과,상기 제1 도전층에 접속되며, 상기 제1 폭보다 작은 제2 폭을 갖는 제2 도전층과,상기 제1 도전층 및 상기 제2 도전층의 상방에 형성된 층간 절연층과,상기 층간 절연층의 상방에 형성된 전극 패드를 포함하고,상기 전극 패드의 끝의 연직 하방으로부터 내측에 위치하는 소정의 영역에, 상기 제1 도전층과 상기 제2 도전층이 접속되어 있는 접속부가 형성되어 있고,상기 접속부에는, 보강부가 형성되어 있는 반도체 장치.
- 반도체층과,상기 반도체층의 상방에 형성되며, 제1 폭을 갖는 제1 도전층과,상기 제1 도전층에 접속되며, 상기 제1 폭보다 작은 제2 폭을 갖는 제2 도전층과,상기 제1 도전층 및 상기 제2 도전층의 상방에 형성된 층간 절연층과,상기 층간 절연층의 상방에 형성된 전극 패드를 포함하고,상기 전극 패드의 적어도 일부의 끝의 연직 하방으로부터 외측에 위치하는 소정의 영역에, 상기 제1 도전층과 상기 제2 도전층이 접속되어 있는 접속부가 형 성되어 있고,상기 접속부에는, 보강부가 형성되어 있는 반도체 장치.
- 제2항에 있어서,상기 전극 패드는, 짧은 변과 긴 변을 갖는 직사각형이며,상기 전극 패드의 상기 짧은 변의 끝의 연직 하방으로부터 외측에 위치하는 소정의 영역에 형성된 상기 접속부에, 상기 보강부가 형성되어 있는 반도체 장치.
- 제2항에 있어서,상기 전극 패드의 상방으로서, 그 전극 패드의 적어도 일부를 노출시키는 개구를 갖는 패시베이션층을 포함하고,상기 소정의 영역은, 상기 끝의 연직 하방으로부터 외측을 향해, 상기 패시베이션층의 막 두께에 상당하는 거리를 갖는 영역인 반도체 장치.
- 제2항에 있어서,상기 전극 패드의 상방으로서, 그 전극 패드의 적어도 일부를 노출시키는 개구를 갖는 패시베이션층을 포함하고,상기 소정의 영역은, 상기 끝의 연직 하방으로부터 외측을 향해, 1.0㎛ 내지 2.5㎛의 거리를 갖는 영역인 반도체 장치.
- 제4항에 있어서,상기 개구에 형성된 범프를 포함하는 반도체 장치.
- 반도체층과,상기 반도체층의 상방에 형성되며, 제1 폭을 갖는 제1 도전층과,상기 제1 도전층에 접속되며, 상기 제1 폭보다 작은 제2 폭을 갖는 제2 도전층과,상기 제1 도전층 및 상기 제2 도전층의 상방에 형성된 층간 절연층과,상기 층간 절연층의 상방에 형성된 전극 패드와,상기 전극 패드의 상방으로서, 그 전극 패드의 적어도 일부를 노출시키는 개구를 갖는 패시베이션층과,상기 개구에 형성된 범프를 포함하고,상기 범프의 끝의 연직 하방으로부터 내측에 위치하는 소정의 영역에, 상기 제1 도전층과 상기 제2 도전층이 접속되어 있는 접속부가 형성되어 있고,상기 접속부에는, 보강부가 형성되어 있는 반도체 장치.
- 반도체층과,상기 반도체층의 상방에 형성되며, 제1 폭을 갖는 제1 도전층과,상기 제1 도전층에 접속되며, 상기 제1 폭보다 작은 제2 폭을 갖는 제2 도전층과,상기 제1 도전층 및 상기 제2 도전층의 상방에 형성된 층간 절연층과,상기 층간 절연층의 상방에 형성된 전극 패드와,상기 전극 패드의 상방으로서, 그 전극 패드의 적어도 일부를 노출시키는 개구를 갖는 패시베이션층과,상기 개구에 형성된 범프를 포함하고,상기 범프의 적어도 일부의 끝의 연직 하방으로부터 내측 및 외측에 위치하는 소정의 영역에, 상기 제1 도전층과 상기 제2 도전층이 접속되어 있는 접속부가 형성되어 있고,상기 접속부에는, 보강부가 형성되어 있는 반도체 장치.
- 제8항에 있어서,상기 범프는, 짧은 변과 긴 변을 갖는 직사각형이며,상기 범프의 상기 짧은 변의 끝의 연직 하방으로부터 내측 및 외측에 위치하는 소정의 영역에 형성된 상기 접속부에, 상기 보강부가 형성되어 있는 반도체 장치.
- 제8항에 있어서,상기 소정의 영역은, 상기 끝의 연직 하방으로부터 외측을 향해 2.0㎛ 내지 3.0㎛의 거리를 갖고, 또한, 내측을 향해 2.0㎛ 내지 3.0㎛의 거리를 갖는 영역인 반도체 장치.
- 제1항 내지 제10항 중 어느 한 항에 있어서,상기 제1 도전층에 상기 제2 도전층이 접속되어 있는 형상은, T자 형상 혹은 L자 형상인 반도체 장치.
- 제1항 내지 제10항 중 어느 한 항에 있어서,상기 보강부는, 상기 제1 도전층 및 상기 제2 도전층으로부터 돌출되어 있는 제3 도전층으로 이루어지는 반도체 장치.
- 제12항에 있어서,상기 제1 도전층, 상기 제2 도전층 및 상기 제3 도전층은 폴리실리콘층인 반도체 장치.
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2006
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- 2006-07-11 CN CNB2006100902896A patent/CN100456466C/zh not_active Expired - Fee Related
- 2006-07-12 KR KR1020060065308A patent/KR100767152B1/ko active IP Right Grant
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2011
- 2011-10-14 US US13/273,613 patent/US8878365B2/en active Active
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2014
- 2014-08-25 US US14/467,548 patent/US20140361433A1/en not_active Abandoned
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Also Published As
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KR20070008438A (ko) | 2007-01-17 |
JP2007027264A (ja) | 2007-02-01 |
JP4605378B2 (ja) | 2011-01-05 |
US20070013065A1 (en) | 2007-01-18 |
CN100456466C (zh) | 2009-01-28 |
US8878365B2 (en) | 2014-11-04 |
US20140361433A1 (en) | 2014-12-11 |
CN1897268A (zh) | 2007-01-17 |
US20120032324A1 (en) | 2012-02-09 |
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