KR100704331B1 - 박막 트랜지스터 장치 - Google Patents

박막 트랜지스터 장치 Download PDF

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Publication number
KR100704331B1
KR100704331B1 KR1020010009500A KR20010009500A KR100704331B1 KR 100704331 B1 KR100704331 B1 KR 100704331B1 KR 1020010009500 A KR1020010009500 A KR 1020010009500A KR 20010009500 A KR20010009500 A KR 20010009500A KR 100704331 B1 KR100704331 B1 KR 100704331B1
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South Korea
Prior art keywords
thin film
crystal
channel
film transistor
grains
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20020063093A (ko
Inventor
야마구찌신야
하따노무쯔꼬
시바다께오
기무라요시노부
박성기
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020010009500A 2001-01-26 2001-02-24 박막 트랜지스터 장치 Expired - Fee Related KR100704331B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001019026A JP4732599B2 (ja) 2001-01-26 2001-01-26 薄膜トランジスタ装置
JP2001-019026 2001-01-26

Publications (2)

Publication Number Publication Date
KR20020063093A KR20020063093A (ko) 2002-08-01
KR100704331B1 true KR100704331B1 (ko) 2007-04-09

Family

ID=18884972

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KR1020010009500A Expired - Fee Related KR100704331B1 (ko) 2001-01-26 2001-02-24 박막 트랜지스터 장치

Country Status (4)

Country Link
US (1) US6501095B2 (enExample)
JP (1) JP4732599B2 (enExample)
KR (1) KR100704331B1 (enExample)
TW (1) TW479371B (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
MXPA02005590A (es) 2000-10-10 2002-09-30 Univ Columbia Metodo y aparato para procesar capas de metal delgadas.
US20020117718A1 (en) * 2001-02-28 2002-08-29 Apostolos Voutsas Method of forming predominantly <100> polycrystalline silicon thin film transistors
JP2003124230A (ja) * 2001-10-12 2003-04-25 Hitachi Ltd 薄膜トランジスタ装置、その製造方法及びこの装置を用いた画像表示装置
KR100483985B1 (ko) * 2001-11-27 2005-04-15 삼성에스디아이 주식회사 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스
US6864520B2 (en) * 2002-04-04 2005-03-08 International Business Machines Corporation Germanium field effect transistor and method of fabricating the same
JP4900756B2 (ja) * 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2003332350A (ja) * 2002-05-17 2003-11-21 Hitachi Ltd 薄膜半導体装置
KR100483987B1 (ko) * 2002-07-08 2005-04-15 삼성에스디아이 주식회사 티에프티용 다결정 실리콘 박막 및 이를 사용한 디바이스
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
CN101562197B (zh) * 2003-06-27 2011-08-10 日本电气株式会社 薄膜晶体管、薄膜晶体管基板及电子设备
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7364952B2 (en) 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
KR100611225B1 (ko) * 2003-11-22 2006-08-10 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조방법
KR100611744B1 (ko) 2003-11-22 2006-08-10 삼성에스디아이 주식회사 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법
KR100712101B1 (ko) * 2004-06-30 2007-05-02 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
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US8274073B2 (en) * 2005-03-11 2012-09-25 Spansion Llc Memory device with improved switching speed and data retention
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
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JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
JP4282699B2 (ja) * 2006-09-01 2009-06-24 株式会社東芝 半導体装置
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
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US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
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US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
CN103081078A (zh) 2011-07-05 2013-05-01 松下电器产业株式会社 薄膜晶体管及其制造方法以及显示装置
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JP6434872B2 (ja) * 2015-07-31 2018-12-05 東芝メモリ株式会社 半導体装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11164809B2 (en) * 2018-12-17 2021-11-02 Intel Corporation Integrated circuits and methods for forming integrated circuits
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
EP4010930A4 (en) 2019-08-09 2023-03-01 Micron Technology, Inc. Transistor and methods of forming transistors
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940010184A (ko) * 1992-10-19 1994-05-24 김광호 다결정 실리콘 박막의 제조방법
KR960026967A (ko) * 1994-12-23 1996-07-22 양승택 다결정 박막 트랜지스터 및 그 제조방법
KR970054500A (ko) * 1995-12-21 1997-07-31 양승택 다결정 실리콘 박막 트랜지스터의 제조방법
JPH101997A (ja) * 1991-08-21 1998-01-06 Toto Ltd トイレ装置
JPH101996A (ja) * 1996-06-18 1998-01-06 Hitachi Home Tec Ltd 衛生洗浄器の火傷防止装置
JPH101994A (ja) * 1996-06-17 1998-01-06 Naoya Suzuki 腰掛便器での男子用排尿介助器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH101997A (ja) * 1991-08-21 1998-01-06 Toto Ltd トイレ装置
KR940010184A (ko) * 1992-10-19 1994-05-24 김광호 다결정 실리콘 박막의 제조방법
KR960026967A (ko) * 1994-12-23 1996-07-22 양승택 다결정 박막 트랜지스터 및 그 제조방법
KR970054500A (ko) * 1995-12-21 1997-07-31 양승택 다결정 실리콘 박막 트랜지스터의 제조방법
JPH101994A (ja) * 1996-06-17 1998-01-06 Naoya Suzuki 腰掛便器での男子用排尿介助器
JPH101996A (ja) * 1996-06-18 1998-01-06 Hitachi Home Tec Ltd 衛生洗浄器の火傷防止装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
10-1994-10184
10-1996-26967
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