KR100672829B1 - 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법 - Google Patents

전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법 Download PDF

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KR100672829B1
KR100672829B1 KR1020050080525A KR20050080525A KR100672829B1 KR 100672829 B1 KR100672829 B1 KR 100672829B1 KR 1020050080525 A KR1020050080525 A KR 1020050080525A KR 20050080525 A KR20050080525 A KR 20050080525A KR 100672829 B1 KR100672829 B1 KR 100672829B1
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silicon nitride
film
oxide
silicon
oxide film
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Expired - Fee Related
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English (en)
Korean (ko)
Inventor
이성해
임주완
안재영
양상렬
황기현
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삼성전자주식회사
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Priority to KR1020050080525A priority Critical patent/KR100672829B1/ko
Priority to JP2006233367A priority patent/JP5235287B2/ja
Priority to US11/468,944 priority patent/US7510935B2/en
Priority to TW095132104A priority patent/TWI392063B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/954—Making oxide-nitride-oxide device

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Formation Of Insulating Films (AREA)
KR1020050080525A 2005-08-31 2005-08-31 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법 Expired - Fee Related KR100672829B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050080525A KR100672829B1 (ko) 2005-08-31 2005-08-31 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법
JP2006233367A JP5235287B2 (ja) 2005-08-31 2006-08-30 Ｓｏｎｏｓ型の不揮発性半導体装置の製造方法
US11/468,944 US7510935B2 (en) 2005-08-31 2006-08-31 Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device
TW095132104A TWI392063B (zh) 2005-08-31 2006-08-31 製造電荷捕獲介電質之方法及製造矽-氧化物-氮化物-氧化物-矽（ｓｏｎｏｓ）型非揮發性半導體裝置之方法

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Application Number Priority Date Filing Date Title
KR1020050080525A KR100672829B1 (ko) 2005-08-31 2005-08-31 전하 트랩 절연체의 제조 방법 및 소노스 타입의 비휘발성메모리 장치의 제조방법

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KR100672829B1 true KR100672829B1 (ko) 2007-01-22

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Country Status (4)

Country Link
US (1) US7510935B2 (enExample)
JP (1) JP5235287B2 (enExample)
KR (1) KR100672829B1 (enExample)
TW (1) TWI392063B (enExample)

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KR100881136B1 (ko) 2007-10-31 2009-02-02 주식회사 하이닉스반도체 향상된 리텐션 특성을 갖는 전하트랩소자의 제조방법
US7859066B2 (en) 2007-06-20 2010-12-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
KR101008982B1 (ko) * 2007-12-21 2011-01-17 주식회사 하이닉스반도체 전하 트랩층을 갖는 불휘발성 메모리소자의 형성방법
KR101202299B1 (ko) * 2008-09-02 2012-11-16 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
KR20150083319A (ko) * 2014-01-09 2015-07-17 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성방법
KR20160024896A (ko) * 2012-11-07 2016-03-07 주식회사 유피케미칼 실리콘-함유 박막의 제조 방법

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JP2007194511A (ja) * 2006-01-23 2007-08-02 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
JP4936790B2 (ja) * 2006-05-22 2012-05-23 株式会社東芝 半導体装置
US20080079061A1 (en) * 2006-09-28 2008-04-03 Advanced Micro Devices, Inc. Flash memory cell structure for increased program speed and erase speed
KR100890040B1 (ko) * 2006-10-23 2009-03-25 주식회사 하이닉스반도체 전하트랩층을 갖는 불휘발성 메모리소자 및 그 제조방법
US8642441B1 (en) * 2006-12-15 2014-02-04 Spansion Llc Self-aligned STI with single poly for manufacturing a flash memory device
JP2008182035A (ja) * 2007-01-24 2008-08-07 Toshiba Corp 半導体記憶装置およびその製造方法
KR101402102B1 (ko) * 2007-03-23 2014-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작 방법
US8329535B2 (en) * 2007-06-11 2012-12-11 Macronix International Co., Ltd. Multi-level-cell trapping DRAM
US8012830B2 (en) 2007-08-08 2011-09-06 Spansion Llc ORO and ORPRO with bit line trench to suppress transport program disturb
US7981745B2 (en) * 2007-08-30 2011-07-19 Spansion Llc Sacrificial nitride and gate replacement
US8455268B2 (en) * 2007-08-31 2013-06-04 Spansion Llc Gate replacement with top oxide regrowth for the top oxide improvement
DE112008003117B4 (de) * 2007-11-28 2015-11-12 Murata Manufacturing Co., Ltd. Schallwellenvorrichtung
JP5416936B2 (ja) * 2008-09-02 2014-02-12 株式会社東芝 半導体装置およびその製造方法
JP5703354B2 (ja) * 2008-11-26 2015-04-15 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5384291B2 (ja) 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8551858B2 (en) * 2010-02-03 2013-10-08 Spansion Llc Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory
US8471328B2 (en) 2010-07-26 2013-06-25 United Microelectronics Corp. Non-volatile memory and manufacturing method thereof
JP5566845B2 (ja) * 2010-10-14 2014-08-06 株式会社東芝 半導体装置の製造方法
JP6035007B2 (ja) * 2010-12-10 2016-11-30 富士通株式会社 Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法
JP2013089724A (ja) * 2011-10-17 2013-05-13 Elpida Memory Inc 窒化シリコン膜の成膜方法、不揮発性記憶装置の製造方法
CN103066074A (zh) * 2011-10-21 2013-04-24 华东师范大学 一种具有双层电介质电荷捕获层的dc-sonos存储器及其制备方法
JP5356569B2 (ja) * 2012-04-05 2013-12-04 株式会社日立国際電気 半導体装置の製造方法及び基板処理方法並びに基板処理装置
JP5646569B2 (ja) * 2012-09-26 2014-12-24 株式会社東芝 半導体装置
US10573511B2 (en) * 2013-03-13 2020-02-25 Asm Ip Holding B.V. Methods for forming silicon nitride thin films
US9331184B2 (en) 2013-06-11 2016-05-03 United Microelectronics Corp. Sonos device and method for fabricating the same
JP6089015B2 (ja) * 2014-10-17 2017-03-01 株式会社東芝 半導体装置
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US10087521B2 (en) 2015-12-15 2018-10-02 Silcotek Corp. Silicon-nitride-containing thermal chemical vapor deposition coating
US9905430B1 (en) * 2016-08-24 2018-02-27 United Microelectronics Corp. Method for forming semiconductor structure
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
US20210261790A1 (en) * 2021-05-03 2021-08-26 Silcotek Corp. Coated systems for hydrogen
US20240304698A1 (en) * 2022-03-30 2024-09-12 Boe Technology Group Co., Ltd. Metal oxide thin film transistor, array substrate and display device

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JPH05145078A (ja) * 1991-11-22 1993-06-11 Kawasaki Steel Corp 半導体不揮発性記憶素子とその製造方法
JPH08293563A (ja) * 1995-04-25 1996-11-05 Citizen Watch Co Ltd 半導体不揮発性記憶装置およびその製造方法
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US6501681B1 (en) * 2000-08-15 2002-12-31 Advanced Micro Devices, Inc. Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories
US6268299B1 (en) * 2000-09-25 2001-07-31 International Business Machines Corporation Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability
JP4617574B2 (ja) * 2001-01-16 2011-01-26 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
KR100426817B1 (ko) 2002-01-28 2004-04-14 삼성전자주식회사 에스오엔오에스 구조를 갖는 비휘발성 메모리소자 및 그의제조방법
US6642573B1 (en) * 2002-03-13 2003-11-04 Advanced Micro Devices, Inc. Use of high-K dielectric material in modified ONO structure for semiconductor devices
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JP2005184029A (ja) * 2005-02-18 2005-07-07 Renesas Technology Corp 不揮発性記憶素子及び半導体集積回路装置
JP2007043147A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd 原子層蒸着工程を用いたシリコンリッチナノクリスタル構造物の形成方法及びこれを用いた不揮発性半導体装置の製造方法
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7859066B2 (en) 2007-06-20 2010-12-28 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of manufacturing the same
KR101044139B1 (ko) * 2007-06-20 2011-06-28 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치 및 그 제조 방법
KR100881136B1 (ko) 2007-10-31 2009-02-02 주식회사 하이닉스반도체 향상된 리텐션 특성을 갖는 전하트랩소자의 제조방법
KR101008982B1 (ko) * 2007-12-21 2011-01-17 주식회사 하이닉스반도체 전하 트랩층을 갖는 불휘발성 메모리소자의 형성방법
KR101202299B1 (ko) * 2008-09-02 2012-11-16 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
KR20160024896A (ko) * 2012-11-07 2016-03-07 주식회사 유피케미칼 실리콘-함유 박막의 제조 방법
KR101699775B1 (ko) * 2012-11-07 2017-01-25 주식회사 유피케미칼 실리콘-함유 박막의 제조 방법
KR20150083319A (ko) * 2014-01-09 2015-07-17 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성방법
KR102066743B1 (ko) * 2014-01-09 2020-01-15 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성방법

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JP2007067412A (ja) 2007-03-15
TW200715485A (en) 2007-04-16
US20070048957A1 (en) 2007-03-01
JP5235287B2 (ja) 2013-07-10
TWI392063B (zh) 2013-04-01
US7510935B2 (en) 2009-03-31

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