KR100503531B1 - 반도체디바이스 - Google Patents

반도체디바이스 Download PDF

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Publication number
KR100503531B1
KR100503531B1 KR10-1998-0705131A KR19980705131A KR100503531B1 KR 100503531 B1 KR100503531 B1 KR 100503531B1 KR 19980705131 A KR19980705131 A KR 19980705131A KR 100503531 B1 KR100503531 B1 KR 100503531B1
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South Korea
Prior art keywords
mounting surface
transistor
semiconductor device
emitter
conductive mounting
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Expired - Fee Related
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KR10-1998-0705131A
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English (en)
Korean (ko)
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KR19990077001A (ko
Inventor
아테프 악노크
페트루스 마티누스 알베르투스 빌헬무스 무어스
Original Assignee
코닌클리케 필립스 일렉트로닉스 엔.브이.
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Publication of KR19990077001A publication Critical patent/KR19990077001A/ko
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Publication of KR100503531B1 publication Critical patent/KR100503531B1/ko
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
KR10-1998-0705131A 1996-11-05 1997-10-02 반도체디바이스 Expired - Fee Related KR100503531B1 (ko)

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US6259157B1 (en) * 1998-03-11 2001-07-10 Sanyo Electric Co., Ltd. Hybrid integrated circuit device, and method of manufacturing thereof
US6529081B1 (en) 2000-06-08 2003-03-04 Zeta, Division Of Sierra Tech Inc. Method of operating a solid state power amplifying device
AU2001268597A1 (en) * 2000-07-06 2002-01-21 Zeta, A Division Of Sierratech, Inc. A solid state power amplifying device
EP1356521B1 (en) * 2001-01-18 2008-12-10 Nxp B.V. Power transistor with internally combined low-pass and band-pass matching stages
KR20040098069A (ko) * 2002-04-11 2004-11-18 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전자 장치 및 전자 장치 제조 방법
JP3896029B2 (ja) * 2002-04-24 2007-03-22 三洋電機株式会社 混成集積回路装置の製造方法
US7173328B2 (en) * 2004-04-06 2007-02-06 Lsi Logic Corporation Integrated circuit package and method having wire-bonded intra-die electrical connections
KR100878708B1 (ko) * 2007-09-04 2009-01-14 알.에프 에이치아이씨 주식회사 고출력 반도체 소자 패키지 및 방법
DE102010001788A1 (de) * 2010-02-10 2011-08-11 Forschungsverbund Berlin e.V., 12489 Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit
CN114521290B (zh) * 2019-09-27 2025-09-02 株式会社村田制作所 电子模块
JP7631157B2 (ja) * 2021-09-17 2025-02-18 株式会社東芝 半導体装置
KR102730756B1 (ko) * 2024-04-03 2024-11-18 주식회사 웨이비스 반도체 소자

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JPH06260563A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp トランジスタ用パッケージ

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JPH06260563A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp トランジスタ用パッケージ

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Publication number Publication date
EP0878025A1 (en) 1998-11-18
EP0878025B1 (en) 2004-04-14
DE69728648D1 (de) 2004-05-19
WO1998020553A1 (en) 1998-05-14
US6087721A (en) 2000-07-11
JP4215133B2 (ja) 2009-01-28
DE69728648T2 (de) 2005-03-31
JP2000504490A (ja) 2000-04-11
KR19990077001A (ko) 1999-10-25

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