AU2001268597A1 - A solid state power amplifying device - Google Patents

A solid state power amplifying device

Info

Publication number
AU2001268597A1
AU2001268597A1 AU2001268597A AU6859701A AU2001268597A1 AU 2001268597 A1 AU2001268597 A1 AU 2001268597A1 AU 2001268597 A AU2001268597 A AU 2001268597A AU 6859701 A AU6859701 A AU 6859701A AU 2001268597 A1 AU2001268597 A1 AU 2001268597A1
Authority
AU
Australia
Prior art keywords
solid state
amplifying device
power amplifying
state power
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001268597A
Inventor
Douglas M. Macheel
Lee B. Max
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZETA A DIVISION OF SIERRATECH Inc
Original Assignee
ZETA A DIVISION OF SIERRATECH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZETA A DIVISION OF SIERRATECH filed Critical ZETA A DIVISION OF SIERRATECH
Publication of AU2001268597A1 publication Critical patent/AU2001268597A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
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    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
AU2001268597A 2000-07-06 2001-06-19 A solid state power amplifying device Abandoned AU2001268597A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61079000A 2000-07-06 2000-07-06
US09610790 2000-07-06
PCT/US2001/019667 WO2002005342A1 (en) 2000-07-06 2001-06-19 A solid state power amplifying device

Publications (1)

Publication Number Publication Date
AU2001268597A1 true AU2001268597A1 (en) 2002-01-21

Family

ID=24446426

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001268597A Abandoned AU2001268597A1 (en) 2000-07-06 2001-06-19 A solid state power amplifying device

Country Status (3)

Country Link
US (3) US20020013048A1 (en)
AU (1) AU2001268597A1 (en)
WO (1) WO2002005342A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7074705B2 (en) * 2004-02-25 2006-07-11 Agere Systems Inc. Methods and apparatus for integrated circuit ball bonding with substantially perpendicular wire bond profiles
US20080288565A1 (en) * 2007-05-15 2008-11-20 Himax Technologies Limited Method to compare and sort binary data
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
US8592966B2 (en) 2007-06-22 2013-11-26 Cree, Inc. RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors
JP5561922B2 (en) 2008-05-20 2014-07-30 三菱電機株式会社 Power semiconductor device
US9871126B2 (en) * 2014-06-16 2018-01-16 Infineon Technologies Ag Discrete semiconductor transistor

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US4042952A (en) * 1976-06-09 1977-08-16 Motorola, Inc. R. F. power transistor device with controlled common lead inductance
US4107728A (en) * 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4193083A (en) * 1977-01-07 1980-03-11 Varian Associates, Inc. Package for push-pull semiconductor devices
JPS5662352A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Semiconductor integrated circuit device for acoustic amplification circuit
JP2601867B2 (en) * 1988-03-31 1997-04-16 株式会社東芝 Semiconductor integrated circuit mounting substrate, method of manufacturing the same, and semiconductor integrated circuit device
JP2864841B2 (en) * 1992-02-04 1999-03-08 三菱電機株式会社 High frequency high power transistor
JPH0637202A (en) * 1992-07-20 1994-02-10 Mitsubishi Electric Corp Package for microwave ic
US5457340A (en) * 1992-12-07 1995-10-10 Integrated Device Technology, Inc. Leadframe with power and ground planes
JPH08222657A (en) * 1995-02-17 1996-08-30 Hitachi Ltd Semiconductor integrated circuit
US5717249A (en) * 1995-04-05 1998-02-10 Matsushita Electronics Corporation RF power amplifying circuit device
US5723906A (en) * 1996-06-07 1998-03-03 Hewlett-Packard Company High-density wirebond chip interconnect for multi-chip modules
US6056186A (en) * 1996-06-25 2000-05-02 Brush Wellman Inc. Method for bonding a ceramic to a metal with a copper-containing shim
JP4215133B2 (en) * 1996-11-05 2009-01-28 エヌエックスピー ビー ヴィ Semiconductor device having a high-frequency bipolar transistor on an insulating substrate
US5774000A (en) * 1996-11-08 1998-06-30 Northrop Grumman Corporation DC semiconductor switch
JP3364404B2 (en) * 1997-02-12 2003-01-08 株式会社東芝 Semiconductor input / output connection structure
US5838072A (en) * 1997-02-24 1998-11-17 Mosel Vitalic Corporation Intrachip power distribution package and method for semiconductors having a supply node electrically interconnected with one or more intermediate nodes
EP0895287A3 (en) * 1997-07-31 2006-04-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and lead frame for the same
US6008533A (en) * 1997-12-08 1999-12-28 Micron Technology, Inc. Controlling impedances of an integrated circuit
JPH11266129A (en) * 1998-03-16 1999-09-28 Toshiba Corp High frequency semiconductor device
JP3483132B2 (en) * 1999-04-23 2004-01-06 シャープ株式会社 High frequency semiconductor device

Also Published As

Publication number Publication date
US20020013048A1 (en) 2002-01-31
US20030089995A1 (en) 2003-05-15
WO2002005342A1 (en) 2002-01-17
US20030089994A1 (en) 2003-05-15

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