JP4215133B2 - 絶縁基板上に高周波バイポーラトランジスタを備える半導体装置 - Google Patents

絶縁基板上に高周波バイポーラトランジスタを備える半導体装置 Download PDF

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JP4215133B2
JP4215133B2 JP52116098A JP52116098A JP4215133B2 JP 4215133 B2 JP4215133 B2 JP 4215133B2 JP 52116098 A JP52116098 A JP 52116098A JP 52116098 A JP52116098 A JP 52116098A JP 4215133 B2 JP4215133 B2 JP 4215133B2
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semiconductor device
mounting surface
transistor
substrate
base
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JP2000504490A5 (enExample
JP2000504490A (ja
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アテフ アクノウク
ペトラス マルティヌス アルベルトゥス ウィルヘルムス ムーアス
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NXP BV
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  • Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
JP52116098A 1996-11-05 1997-10-02 絶縁基板上に高周波バイポーラトランジスタを備える半導体装置 Expired - Lifetime JP4215133B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP96203079.7 1996-11-05
EP96203079 1996-11-05
PCT/IB1997/001194 WO1998020553A1 (en) 1996-11-05 1997-10-02 Semiconductor device with a high-frequency bipolar transistor on an insulating substrate

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JP2000504490A JP2000504490A (ja) 2000-04-11
JP2000504490A5 JP2000504490A5 (enExample) 2005-06-16
JP4215133B2 true JP4215133B2 (ja) 2009-01-28

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US (1) US6087721A (enExample)
EP (1) EP0878025B1 (enExample)
JP (1) JP4215133B2 (enExample)
KR (1) KR100503531B1 (enExample)
DE (1) DE69728648T2 (enExample)
WO (1) WO1998020553A1 (enExample)

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AU705177B1 (en) * 1997-11-26 1999-05-20 Kabushiki Kaisha Toshiba Semiconductor device
US6259157B1 (en) * 1998-03-11 2001-07-10 Sanyo Electric Co., Ltd. Hybrid integrated circuit device, and method of manufacturing thereof
US6529081B1 (en) 2000-06-08 2003-03-04 Zeta, Division Of Sierra Tech Inc. Method of operating a solid state power amplifying device
AU2001268597A1 (en) * 2000-07-06 2002-01-21 Zeta, A Division Of Sierratech, Inc. A solid state power amplifying device
EP1356521B1 (en) * 2001-01-18 2008-12-10 Nxp B.V. Power transistor with internally combined low-pass and band-pass matching stages
KR20040098069A (ko) * 2002-04-11 2004-11-18 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전자 장치 및 전자 장치 제조 방법
JP3896029B2 (ja) * 2002-04-24 2007-03-22 三洋電機株式会社 混成集積回路装置の製造方法
US7173328B2 (en) * 2004-04-06 2007-02-06 Lsi Logic Corporation Integrated circuit package and method having wire-bonded intra-die electrical connections
KR100878708B1 (ko) * 2007-09-04 2009-01-14 알.에프 에이치아이씨 주식회사 고출력 반도체 소자 패키지 및 방법
DE102010001788A1 (de) * 2010-02-10 2011-08-11 Forschungsverbund Berlin e.V., 12489 Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit
CN114521290B (zh) * 2019-09-27 2025-09-02 株式会社村田制作所 电子模块
JP7631157B2 (ja) * 2021-09-17 2025-02-18 株式会社東芝 半導体装置
KR102730756B1 (ko) * 2024-04-03 2024-11-18 주식회사 웨이비스 반도체 소자

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Also Published As

Publication number Publication date
EP0878025A1 (en) 1998-11-18
KR100503531B1 (ko) 2005-09-26
EP0878025B1 (en) 2004-04-14
DE69728648D1 (de) 2004-05-19
WO1998020553A1 (en) 1998-05-14
US6087721A (en) 2000-07-11
DE69728648T2 (de) 2005-03-31
JP2000504490A (ja) 2000-04-11
KR19990077001A (ko) 1999-10-25

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