JP2000504490A5 - - Google Patents
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- Publication number
- JP2000504490A5 JP2000504490A5 JP1998521160A JP52116098A JP2000504490A5 JP 2000504490 A5 JP2000504490 A5 JP 2000504490A5 JP 1998521160 A JP1998521160 A JP 1998521160A JP 52116098 A JP52116098 A JP 52116098A JP 2000504490 A5 JP2000504490 A5 JP 2000504490A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96203079.7 | 1996-11-05 | ||
| EP96203079 | 1996-11-05 | ||
| PCT/IB1997/001194 WO1998020553A1 (en) | 1996-11-05 | 1997-10-02 | Semiconductor device with a high-frequency bipolar transistor on an insulating substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000504490A JP2000504490A (ja) | 2000-04-11 |
| JP2000504490A5 true JP2000504490A5 (enExample) | 2005-06-16 |
| JP4215133B2 JP4215133B2 (ja) | 2009-01-28 |
Family
ID=8224552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52116098A Expired - Lifetime JP4215133B2 (ja) | 1996-11-05 | 1997-10-02 | 絶縁基板上に高周波バイポーラトランジスタを備える半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6087721A (enExample) |
| EP (1) | EP0878025B1 (enExample) |
| JP (1) | JP4215133B2 (enExample) |
| KR (1) | KR100503531B1 (enExample) |
| DE (1) | DE69728648T2 (enExample) |
| WO (1) | WO1998020553A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU705177B1 (en) * | 1997-11-26 | 1999-05-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US6259157B1 (en) * | 1998-03-11 | 2001-07-10 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device, and method of manufacturing thereof |
| US6529081B1 (en) | 2000-06-08 | 2003-03-04 | Zeta, Division Of Sierra Tech Inc. | Method of operating a solid state power amplifying device |
| AU2001268597A1 (en) * | 2000-07-06 | 2002-01-21 | Zeta, A Division Of Sierratech, Inc. | A solid state power amplifying device |
| EP1356521B1 (en) * | 2001-01-18 | 2008-12-10 | Nxp B.V. | Power transistor with internally combined low-pass and band-pass matching stages |
| KR20040098069A (ko) * | 2002-04-11 | 2004-11-18 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 전자 장치 및 전자 장치 제조 방법 |
| JP3896029B2 (ja) * | 2002-04-24 | 2007-03-22 | 三洋電機株式会社 | 混成集積回路装置の製造方法 |
| US7173328B2 (en) * | 2004-04-06 | 2007-02-06 | Lsi Logic Corporation | Integrated circuit package and method having wire-bonded intra-die electrical connections |
| KR100878708B1 (ko) * | 2007-09-04 | 2009-01-14 | 알.에프 에이치아이씨 주식회사 | 고출력 반도체 소자 패키지 및 방법 |
| DE102010001788A1 (de) * | 2010-02-10 | 2011-08-11 | Forschungsverbund Berlin e.V., 12489 | Skalierbarer Aufbau für laterale Halbleiterbauelemente mit hoher Stromtragfähigkeit |
| CN114521290B (zh) * | 2019-09-27 | 2025-09-02 | 株式会社村田制作所 | 电子模块 |
| JP7631157B2 (ja) * | 2021-09-17 | 2025-02-18 | 株式会社東芝 | 半導体装置 |
| KR102730756B1 (ko) * | 2024-04-03 | 2024-11-18 | 주식회사 웨이비스 | 반도체 소자 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3784884A (en) * | 1972-11-03 | 1974-01-08 | Motorola Inc | Low parasitic microwave package |
| NL8202470A (nl) * | 1982-06-18 | 1984-01-16 | Philips Nv | Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. |
| JPH0767055B2 (ja) * | 1989-12-05 | 1995-07-19 | 三菱電機株式会社 | 高周波半導体装置 |
| US5198904A (en) * | 1991-02-25 | 1993-03-30 | Comark Communications, Inc. | Aural carrier correction system and method |
| JP2728322B2 (ja) * | 1991-09-05 | 1998-03-18 | 三菱電機株式会社 | 半導体装置 |
| JPH0595212A (ja) * | 1991-10-01 | 1993-04-16 | Mitsubishi Electric Corp | 高周波半導体混成集積回路装置 |
| US5151775A (en) * | 1991-10-07 | 1992-09-29 | Tektronix, Inc. | Integrated circuit device having improved substrate capacitance isolation |
| DE69307983T2 (de) * | 1992-09-03 | 1997-05-28 | Sgs Thomson Microelectronics | Vertikal isolierter, monolithischer Hochleistungsbipolartransistor mit Topkollektor |
| JPH06260563A (ja) * | 1993-03-03 | 1994-09-16 | Mitsubishi Electric Corp | トランジスタ用パッケージ |
| US5397917A (en) * | 1993-04-26 | 1995-03-14 | Motorola, Inc. | Semiconductor package capable of spreading heat |
| JP3987573B2 (ja) * | 1994-10-31 | 2007-10-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 能動素子及び受動素子を有する集積化された半導体装置 |
| US5986324A (en) * | 1997-04-11 | 1999-11-16 | Raytheon Company | Heterojunction bipolar transistor |
-
1997
- 1997-10-02 EP EP97940306A patent/EP0878025B1/en not_active Expired - Lifetime
- 1997-10-02 DE DE69728648T patent/DE69728648T2/de not_active Expired - Lifetime
- 1997-10-02 KR KR10-1998-0705131A patent/KR100503531B1/ko not_active Expired - Fee Related
- 1997-10-02 JP JP52116098A patent/JP4215133B2/ja not_active Expired - Lifetime
- 1997-10-02 WO PCT/IB1997/001194 patent/WO1998020553A1/en not_active Ceased
- 1997-11-03 US US08/963,647 patent/US6087721A/en not_active Expired - Lifetime