KR100438461B1 - 매립 비트라인 또는 트렌치 커패시터를 갖춘 ｄｒａｍ구조체의 제조 방법 - Google Patents

매립 비트라인 또는 트렌치 커패시터를 갖춘 ｄｒａｍ구조체의 제조 방법 Download PDF

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Publication number
KR100438461B1
KR100438461B1 KR10-2001-7011604A KR20017011604A KR100438461B1 KR 100438461 B1 KR100438461 B1 KR 100438461B1 KR 20017011604 A KR20017011604 A KR 20017011604A KR 100438461 B1 KR100438461 B1 KR 100438461B1
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KR
South Korea
Prior art keywords
conductive structure
recess
substrate
transistor
adjacent
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Application number
KR10-2001-7011604A
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English (en)
Korean (ko)
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KR20010104378A (ko
Inventor
요제프 뷜러
안날리자 카펠라니
베른하르트 젤
Original Assignee
인피니언 테크놀로지스 아게
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Publication of KR20010104378A publication Critical patent/KR20010104378A/ko
Application granted granted Critical
Publication of KR100438461B1 publication Critical patent/KR100438461B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR10-2001-7011604A 1999-03-12 2000-03-10 매립 비트라인 또는 트렌치 커패시터를 갖춘 ｄｒａｍ구조체의 제조 방법 KR100438461B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19911149A DE19911149C1 (de) 1999-03-12 1999-03-12 Integrierte Schaltungsanordnung, die eine in einem Substrat vergrabene leitende Struktur umfaßt, die mit einem Gebiet des Substrats elektrisch verbunden ist, und Verfahren zu deren Herstellung
DE19911149.9 1999-03-12
PCT/DE2000/000757 WO2000055905A1 (de) 1999-03-12 2000-03-10 Verfahren zur herstellung einer dram-struktur mit vergrabenen bitleitungen oder grabenkondensatoren

Publications (2)

Publication Number Publication Date
KR20010104378A KR20010104378A (ko) 2001-11-24
KR100438461B1 true KR100438461B1 (ko) 2004-07-03

Family

ID=7900803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7011604A KR100438461B1 (ko) 1999-03-12 2000-03-10 매립 비트라인 또는 트렌치 커패시터를 갖춘 ｄｒａｍ구조체의 제조 방법

Country Status (7)

Country Link
US (1) US6800898B2 (de)
EP (1) EP1166350B1 (de)
JP (1) JP3786837B2 (de)
KR (1) KR100438461B1 (de)
DE (2) DE19911149C1 (de)
TW (1) TW486814B (de)
WO (1) WO2000055905A1 (de)

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DE10045694A1 (de) * 2000-09-15 2002-04-04 Infineon Technologies Ag Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung
US6621112B2 (en) * 2000-12-06 2003-09-16 Infineon Technologies Ag DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication
DE10111499C1 (de) * 2001-03-09 2002-07-11 Infineon Technologies Ag Speicherzelle mit einem Graben und Verfahren zu ihrer Herstellung
DE10125967C1 (de) * 2001-05-29 2002-07-11 Infineon Technologies Ag DRAM-Zellanordnung mit vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
DE10208774B4 (de) * 2002-02-28 2005-09-15 Infineon Technologies Ag Verfahren zur Herstellung einer Speicherzelle
KR100474737B1 (ko) * 2002-05-02 2005-03-08 동부아남반도체 주식회사 고집적화가 가능한 디램 셀 구조 및 제조 방법
TW594979B (en) * 2003-07-03 2004-06-21 Nanya Technology Corp Memory device with vertical transistors and deep trench capacitors and method of fabricating the same
US20050088895A1 (en) * 2003-07-25 2005-04-28 Infineon Technologies Ag DRAM cell array having vertical memory cells and methods for fabricating a DRAM cell array and a DRAM
US7256441B2 (en) 2005-04-07 2007-08-14 Infineon Technologies Ag Partially recessed DRAM cell structure
JP2006310651A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置の製造方法
TWI400757B (zh) 2005-06-29 2013-07-01 Fairchild Semiconductor 形成遮蔽閘極場效應電晶體之方法
US7807536B2 (en) * 2006-02-10 2010-10-05 Fairchild Semiconductor Corporation Low resistance gate for power MOSFET applications and method of manufacture
JP4806103B2 (ja) * 2009-02-12 2011-11-02 有限会社アートスクリュー 締結部材および締結構造
KR101077445B1 (ko) * 2009-05-28 2011-10-26 주식회사 하이닉스반도체 수직 채널 트랜지스터를 갖는 반도체 소자 및 그 제조 방법
KR101164955B1 (ko) 2009-09-30 2012-07-12 에스케이하이닉스 주식회사 단일 측벽 콘택을 갖는 반도체장치 및 제조 방법
KR101145390B1 (ko) * 2009-11-30 2012-05-15 에스케이하이닉스 주식회사 매립비트라인을 구비한 반도체장치 및 그 제조 방법
JP2011205030A (ja) * 2010-03-26 2011-10-13 Elpida Memory Inc 半導体装置および半導体装置の製造方法
KR101127228B1 (ko) 2010-05-14 2012-03-29 주식회사 하이닉스반도체 반도체장치의 수직셀의 접합 형성 방법
KR101129955B1 (ko) * 2010-06-10 2012-03-26 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
KR101212257B1 (ko) * 2010-07-06 2012-12-12 에스케이하이닉스 주식회사 측벽콘택을 구비한 반도체장치 및 그 제조 방법
KR101062889B1 (ko) 2010-07-07 2011-09-07 주식회사 하이닉스반도체 측벽접합을 구비한 반도체장치 및 그 제조 방법
JP2012059781A (ja) * 2010-09-06 2012-03-22 Elpida Memory Inc 半導体装置及びその製造方法
KR101172272B1 (ko) * 2010-12-30 2012-08-09 에스케이하이닉스 주식회사 매립비트라인을 구비한 반도체장치 제조 방법
KR101168338B1 (ko) 2011-02-28 2012-07-31 에스케이하이닉스 주식회사 반도체 메모리 소자 및 그 제조방법

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Also Published As

Publication number Publication date
JP3786837B2 (ja) 2006-06-14
WO2000055905A1 (de) 2000-09-21
JP2002539643A (ja) 2002-11-19
DE50013949D1 (de) 2007-02-22
EP1166350B1 (de) 2007-01-10
TW486814B (en) 2002-05-11
DE19911149C1 (de) 2000-05-18
US20030034512A1 (en) 2003-02-20
KR20010104378A (ko) 2001-11-24
US6800898B2 (en) 2004-10-05
EP1166350A1 (de) 2002-01-02

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