KR100406612B1 - 다치 데이터를 기억하는 구성을 갖는 불휘발성 반도체기억 장치 및 이 불휘발성 반도체 기억장치를 구비하는데이터 기억 시스템 - Google Patents

다치 데이터를 기억하는 구성을 갖는 불휘발성 반도체기억 장치 및 이 불휘발성 반도체 기억장치를 구비하는데이터 기억 시스템 Download PDF

Info

Publication number
KR100406612B1
KR100406612B1 KR10-2000-0054397A KR20000054397A KR100406612B1 KR 100406612 B1 KR100406612 B1 KR 100406612B1 KR 20000054397 A KR20000054397 A KR 20000054397A KR 100406612 B1 KR100406612 B1 KR 100406612B1
Authority
KR
South Korea
Prior art keywords
data
value
read
memory cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-0054397A
Other languages
English (en)
Korean (ko)
Other versions
KR20010077868A (ko
Inventor
다마다사토루
사에키다츠야
고우로야스히로
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20010077868A publication Critical patent/KR20010077868A/ko
Application granted granted Critical
Publication of KR100406612B1 publication Critical patent/KR100406612B1/ko
Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 미쓰비시덴키 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
KR10-2000-0054397A 2000-01-24 2000-09-16 다치 데이터를 기억하는 구성을 갖는 불휘발성 반도체기억 장치 및 이 불휘발성 반도체 기억장치를 구비하는데이터 기억 시스템 Expired - Fee Related KR100406612B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000014557A JP4282197B2 (ja) 2000-01-24 2000-01-24 不揮発性半導体記憶装置
JP2000-014557 2000-01-24

Publications (2)

Publication Number Publication Date
KR20010077868A KR20010077868A (ko) 2001-08-20
KR100406612B1 true KR100406612B1 (ko) 2003-11-21

Family

ID=18542004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0054397A Expired - Fee Related KR100406612B1 (ko) 2000-01-24 2000-09-16 다치 데이터를 기억하는 구성을 갖는 불휘발성 반도체기억 장치 및 이 불휘발성 반도체 기억장치를 구비하는데이터 기억 시스템

Country Status (5)

Country Link
US (1) US6353553B1 (https=)
JP (1) JP4282197B2 (https=)
KR (1) KR100406612B1 (https=)
DE (1) DE10046022A1 (https=)
TW (1) TW484060B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881133B2 (en) 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
KR20140110390A (ko) * 2013-03-07 2014-09-17 삼성전자주식회사 메모리 제어기 및 그것을 포함하는 메모리 시스템

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4299428B2 (ja) * 2000-01-19 2009-07-22 三星電子株式会社 可変容量半導体記憶装置
JP2001209574A (ja) * 2000-01-25 2001-08-03 Mitsubishi Electric Corp 記憶装置の制御方法
US6297988B1 (en) * 2000-02-25 2001-10-02 Advanced Micro Devices, Inc. Mode indicator for multi-level memory
JP2003022687A (ja) * 2001-07-09 2003-01-24 Mitsubishi Electric Corp 半導体記憶装置
US7554842B2 (en) * 2001-09-17 2009-06-30 Sandisk Corporation Multi-purpose non-volatile memory card
US6717847B2 (en) * 2001-09-17 2004-04-06 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6839826B2 (en) 2002-02-06 2005-01-04 Sandisk Corporation Memory device with pointer structure to map logical to physical addresses
JP2003242787A (ja) 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2004086991A (ja) * 2002-08-27 2004-03-18 Renesas Technology Corp 不揮発性記憶装置
JP2004240795A (ja) * 2003-02-07 2004-08-26 Renesas Technology Corp 不揮発性記憶装置
JP2005108304A (ja) * 2003-09-29 2005-04-21 Toshiba Corp 半導体記憶装置及びその制御方法
KR100719380B1 (ko) 2006-03-31 2007-05-18 삼성전자주식회사 향상된 신뢰성 특성을 갖는 다치 플래시 메모리 장치 및그것을 포함한 메모리 시스템
EP1538525A1 (en) * 2003-12-04 2005-06-08 Texas Instruments Incorporated ECC computation simultaneously performed while reading or programming a flash memory
US8082382B2 (en) * 2004-06-04 2011-12-20 Micron Technology, Inc. Memory device with user configurable density/performance
US7535759B2 (en) * 2004-06-04 2009-05-19 Micron Technology, Inc. Memory system with user configurable density/performance option
US7336531B2 (en) 2004-06-25 2008-02-26 Micron Technology, Inc. Multiple level cell memory device with single bit per cell, re-mappable memory block
JP2008020937A (ja) * 2004-10-29 2008-01-31 Matsushita Electric Ind Co Ltd 不揮発性記憶装置
US7308525B2 (en) * 2005-01-10 2007-12-11 Sandisk Il Ltd. Method of managing a multi-bit cell flash memory with improved reliablility and performance
JP4768298B2 (ja) * 2005-03-28 2011-09-07 株式会社東芝 不揮発性半導体記憶装置
US7272041B2 (en) * 2005-06-30 2007-09-18 Intel Corporation Memory array with pseudo single bit memory cell and method
US7404028B2 (en) * 2005-06-30 2008-07-22 Gm Global Technology Operations, Inc. ECU identification retention across reprogramming events
US7752382B2 (en) * 2005-09-09 2010-07-06 Sandisk Il Ltd Flash memory storage system and method
BRPI0520592A2 (pt) * 2005-09-29 2009-05-19 Trek 2000 Int Ltd armazenamento de dados portátil usando memória flash slc e mlc
JP2007109352A (ja) 2005-10-17 2007-04-26 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置およびその駆動方法。
US7345914B2 (en) * 2005-12-22 2008-03-18 Intel Corporation Use of flash memory blocks outside of the main flash memory array
JP2007200388A (ja) * 2006-01-24 2007-08-09 Megachips Lsi Solutions Inc 半導体記憶装置及び半導体記憶装置の使用方法
JP2008009919A (ja) 2006-06-30 2008-01-17 Toshiba Corp カードコントローラ
JP4886434B2 (ja) * 2006-09-04 2012-02-29 株式会社東芝 不揮発性半導体記憶装置
JP5072301B2 (ja) * 2006-09-25 2012-11-14 株式会社東芝 半導体集積回路装置及びその動作方法
KR100827695B1 (ko) 2006-11-03 2008-05-07 삼성전자주식회사 연약 셀을 표식자로서 활용하는 불휘발성 반도체 메모리장치
JP5028967B2 (ja) * 2006-11-15 2012-09-19 富士通セミコンダクター株式会社 半導体記憶装置および半導体記憶装置の制御方法
KR100791006B1 (ko) 2006-12-06 2008-01-03 삼성전자주식회사 싱글레벨 셀 및 멀티레벨 셀을 구비하는 반도체 메모리장치 및 그 구동방법
KR100794311B1 (ko) 2006-12-27 2008-01-11 삼성전자주식회사 프로그램 에러를 차단할 수 있는 멀티 비트 플래시 메모리장치의 프로그램 방법
KR100799688B1 (ko) 2007-01-03 2008-02-01 삼성전자주식회사 백업 회로를 갖는 메모리 시스템 및 그것의 프로그램 방법
KR100872186B1 (ko) * 2007-01-04 2008-12-09 삼성전자주식회사 상이한 에러 제어 스킴을 갖는 하이브리드 플래시 메모리장치 및 그것을 포함한 메모리 시스템
JP5111882B2 (ja) * 2007-02-09 2013-01-09 株式会社東芝 不揮発性半導体記憶装置
US7646636B2 (en) 2007-02-16 2010-01-12 Mosaid Technologies Incorporated Non-volatile memory with dynamic multi-mode operation
US7675783B2 (en) * 2007-02-27 2010-03-09 Samsung Electronics Co., Ltd. Nonvolatile memory device and driving method thereof
JP5224706B2 (ja) * 2007-03-23 2013-07-03 キヤノン株式会社 記憶装置及び記憶装置の制御方法
JP2008257773A (ja) * 2007-04-02 2008-10-23 Toshiba Corp 不揮発性半導体記憶装置、不揮発性半導体記憶装置の制御方法、不揮発性半導体記憶システム、及びメモリカード
US7460398B1 (en) * 2007-06-19 2008-12-02 Micron Technology, Inc. Programming a memory with varying bits per cell
KR101303177B1 (ko) * 2007-06-22 2013-09-17 삼성전자주식회사 불휘발성 메모리 소자 및 그 동작 방법
JP2009104729A (ja) 2007-10-24 2009-05-14 Toshiba Corp 不揮発性半導体記憶装置
KR101227368B1 (ko) 2007-11-05 2013-01-29 삼성전자주식회사 낸드 플래시 메모리 소자의 프로그래밍 방법 및 데이터읽기 방법.
JP2009129477A (ja) * 2007-11-20 2009-06-11 Toshiba Corp 不揮発性半導体記憶装置
US7843728B2 (en) 2007-11-20 2010-11-30 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
TWI404076B (zh) * 2008-01-07 2013-08-01 Powerchip Technology Corp 記憶體裝置以及資料讀取方法
US7755939B2 (en) * 2008-01-15 2010-07-13 Micron Technology, Inc. System and devices including memory resistant to program disturb and methods of using, making, and operating the same
JP5223869B2 (ja) 2008-01-16 2013-06-26 富士通株式会社 半導体記憶装置、制御装置、制御方法
CN101494086B (zh) * 2008-01-24 2011-12-07 群联电子股份有限公司 快闪存储器储存装置、快闪存储器控制器及其切换方法
JP2009252255A (ja) * 2008-04-01 2009-10-29 Renesas Technology Corp 不揮発性半導体記憶装置
US8060719B2 (en) * 2008-05-28 2011-11-15 Micron Technology, Inc. Hybrid memory management
KR101515098B1 (ko) 2008-11-20 2015-04-24 삼성전자주식회사 플래시 메모리 장치 및 이의 독출 방법
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US20110002169A1 (en) * 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
WO2011052488A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2494597A4 (en) * 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
KR20190124813A (ko) * 2009-11-20 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8144512B2 (en) * 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US20110153912A1 (en) * 2009-12-18 2011-06-23 Sergey Anatolievich Gorobets Maintaining Updates of Multi-Level Non-Volatile Memory in Binary Non-Volatile Memory
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
JP5556189B2 (ja) * 2010-01-20 2014-07-23 ソニー株式会社 記憶装置およびデータの書込み方法
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
JP2012212487A (ja) * 2011-03-30 2012-11-01 Toshiba Corp メモリシステム
US8588003B1 (en) * 2011-08-01 2013-11-19 Densbits Technologies Ltd. System, method and computer program product for programming and for recovering from a power failure
JP2012043530A (ja) * 2011-10-24 2012-03-01 Toshiba Corp 不揮発性半導体記憶装置
JP2013131275A (ja) * 2011-12-22 2013-07-04 Toshiba Corp 不揮発性半導体記憶装置
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
JP6516978B2 (ja) 2013-07-17 2019-05-22 株式会社半導体エネルギー研究所 半導体装置
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
US10811082B1 (en) * 2019-06-24 2020-10-20 Sandisk Technologies Llc Non-volatile memory with fast data cache transfer scheme
US10825526B1 (en) 2019-06-24 2020-11-03 Sandisk Technologies Llc Non-volatile memory with reduced data cache buffer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5515317A (en) * 1994-06-02 1996-05-07 Intel Corporation Addressing modes for a dynamic single bit per cell to multiple bit per cell memory
US5541886A (en) * 1994-12-27 1996-07-30 Intel Corporation Method and apparatus for storing control information in multi-bit non-volatile memory arrays
JP2976871B2 (ja) * 1996-02-07 1999-11-10 日本電気株式会社 半導体記憶装置
KR100205240B1 (ko) * 1996-09-13 1999-07-01 윤종용 단일 비트 및 다중 비트 셀들이 장착된 불휘발성 반도체 메모리 장치
KR100259972B1 (ko) * 1997-01-21 2000-06-15 윤종용 메모리 셀당 2개 이상의 저장 상태들을 갖는 불휘발성 반도체 메모리 장치
JPH1131102A (ja) 1997-07-14 1999-02-02 Toshiba Corp データ記憶システム及び同システムに適用するアクセス制御方法
JPH11224491A (ja) * 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
KR100332950B1 (ko) * 1998-04-10 2002-08-21 삼성전자 주식회사 단일비트동작모드와다중비트동작모드를갖는불휘발성반도체메모리장치및그것의기입/독출방법
JP3629144B2 (ja) * 1998-06-01 2005-03-16 株式会社東芝 不揮発性半導体記憶装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A 256K HCMOS ROM Using a Four-state Cell Approach IEEE J. of Solid-State Circuits, SC-20, No. 2, April, 1985, p598-p602. *
A Four-State ROM Using Multilevel Process Technology, IEEE J. of Solid-State Circuits, SC-15, No. 2 April, 1984, p174-p179 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881133B2 (en) 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
KR20140110390A (ko) * 2013-03-07 2014-09-17 삼성전자주식회사 메모리 제어기 및 그것을 포함하는 메모리 시스템
KR102068342B1 (ko) 2013-03-07 2020-01-20 삼성전자주식회사 메모리 제어기 및 그것을 포함하는 메모리 시스템

Also Published As

Publication number Publication date
JP2001210082A (ja) 2001-08-03
JP4282197B2 (ja) 2009-06-17
KR20010077868A (ko) 2001-08-20
DE10046022A1 (de) 2001-08-02
TW484060B (en) 2002-04-21
US6353553B1 (en) 2002-03-05

Similar Documents

Publication Publication Date Title
KR100406612B1 (ko) 다치 데이터를 기억하는 구성을 갖는 불휘발성 반도체기억 장치 및 이 불휘발성 반도체 기억장치를 구비하는데이터 기억 시스템
US7773422B2 (en) 3-level non-volatile semiconductor memory device and method of driving the same
CN1856839B (zh) 使用多进制存储器中的一些存储块作为二进制存储块的非易失性半导体存储器件
US8656092B2 (en) Method for reading a multilevel cell in a non-volatile memory device
KR100550963B1 (ko) 메모리 카드, 기억 장치 및 기억 시스템
KR101098656B1 (ko) 반도체 기억 장치 및 그 판독 방법
US8134872B2 (en) Apparatus and methods for programming multilevel-cell NAND memory devices
US7315473B2 (en) Semiconductor storage device having page copying function
US7839678B2 (en) NAND type flash memory and write method of the same
CN104200839A (zh) 半导体集成电路
US20100080056A1 (en) Semiconductor memory system
US8036034B2 (en) Semiconductor storage device equipped with a sense amplifier for reading data and threshold-voltage-information data
JP3980731B2 (ja) 不揮発性半導体記憶装置および読出し方法
JP4040215B2 (ja) 不揮発性半導体メモリの制御方法
US7672160B2 (en) 3-level non-volatile semiconductor memory devices and related methods
JP2013025845A (ja) 不揮発性半導体記憶装置
JP4916504B2 (ja) データ記憶システム
JP2007226897A (ja) 半導体集積回路装置
JP2008234714A (ja) 不揮発性半導体記憶装置の書き込み制御方法及びメモリシステム
CN101499318A (zh) 存储器编程方法以及数据存取方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20061026

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20071026

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20081024

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20091022

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20101027

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20111019

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20121023

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20131022

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20141021

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20151016

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20161111

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20161111