TW484060B - Nonvolatile semiconductor memory device and data storage system comprising the nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device and data storage system comprising the nonvolatile semiconductor memory device Download PDF

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Publication number
TW484060B
TW484060B TW089119222A TW89119222A TW484060B TW 484060 B TW484060 B TW 484060B TW 089119222 A TW089119222 A TW 089119222A TW 89119222 A TW89119222 A TW 89119222A TW 484060 B TW484060 B TW 484060B
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TW
Taiwan
Prior art keywords
data
memory
value
state
mentioned
Prior art date
Application number
TW089119222A
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English (en)
Chinese (zh)
Inventor
Satoru Tamada
Tatsuya Saeki
Yasuhiro Kouro
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW484060B publication Critical patent/TW484060B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
TW089119222A 2000-01-24 2000-09-19 Nonvolatile semiconductor memory device and data storage system comprising the nonvolatile semiconductor memory device TW484060B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000014557A JP4282197B2 (ja) 2000-01-24 2000-01-24 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
TW484060B true TW484060B (en) 2002-04-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW089119222A TW484060B (en) 2000-01-24 2000-09-19 Nonvolatile semiconductor memory device and data storage system comprising the nonvolatile semiconductor memory device

Country Status (5)

Country Link
US (1) US6353553B1 (https=)
JP (1) JP4282197B2 (https=)
KR (1) KR100406612B1 (https=)
DE (1) DE10046022A1 (https=)
TW (1) TW484060B (https=)

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Also Published As

Publication number Publication date
JP2001210082A (ja) 2001-08-03
JP4282197B2 (ja) 2009-06-17
KR20010077868A (ko) 2001-08-20
DE10046022A1 (de) 2001-08-02
US6353553B1 (en) 2002-03-05
KR100406612B1 (ko) 2003-11-21

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