CN101494086B - 快闪存储器储存装置、快闪存储器控制器及其切换方法 - Google Patents
快闪存储器储存装置、快闪存储器控制器及其切换方法 Download PDFInfo
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CN2008100051703A CN101494086B (zh) | 2008-01-24 | 2008-01-24 | 快闪存储器储存装置、快闪存储器控制器及其切换方法 |
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CN2008100051703A CN101494086B (zh) | 2008-01-24 | 2008-01-24 | 快闪存储器储存装置、快闪存储器控制器及其切换方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107436852A (zh) * | 2017-07-21 | 2017-12-05 | 上海斐讯数据通信技术有限公司 | 一种接口切换装置及一种终端设备 |
Families Citing this family (11)
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CN102033810B (zh) * | 2009-09-24 | 2013-03-27 | 慧荣科技股份有限公司 | 用于管理闪存多个区块的方法和相关记忆装置及其控制器 |
TWI447579B (zh) | 2011-05-18 | 2014-08-01 | Phison Electronics Corp | 程式碼載入與存取方法、記憶體控制器與記憶體儲存裝置 |
CN102800357B (zh) * | 2011-05-27 | 2016-05-18 | 群联电子股份有限公司 | 程序码载入与存取方法、存储器控制器与存储器储存装置 |
CN103514096B (zh) * | 2012-06-18 | 2016-06-08 | 群联电子股份有限公司 | 数据储存方法、存储器控制器与存储器储存装置 |
CN104166558B (zh) * | 2013-05-16 | 2018-06-15 | 群联电子股份有限公司 | 固件码载入方法、存储器控制器与存储器存储装置 |
CN104424992B (zh) * | 2013-08-30 | 2018-04-03 | 北京兆易创新科技股份有限公司 | 一种串行接口nand闪存单元 |
CN106293534A (zh) * | 2016-08-12 | 2017-01-04 | 深圳市金泰克半导体有限公司 | 一种具有多种工作模式的固态硬盘及其实现方法 |
TWI652577B (zh) | 2017-06-19 | 2019-03-01 | 慧榮科技股份有限公司 | 資料儲存裝置及非揮發式記憶體操作方法 |
TWI653538B (zh) | 2017-11-13 | 2019-03-11 | 慧榮科技股份有限公司 | 資料儲存裝置與記憶體裝置之資料處理方法 |
TWI660269B (zh) | 2018-01-26 | 2019-05-21 | 慧榮科技股份有限公司 | 用來於一記憶裝置中進行寫入管理之方法以及記憶裝置及其控制器 |
TWI709855B (zh) * | 2018-01-26 | 2020-11-11 | 慧榮科技股份有限公司 | 用來於一記憶裝置中進行寫入管理之方法以及記憶裝置及其控制器 |
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US6657891B1 (en) * | 2002-11-29 | 2003-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device for storing multivalued data |
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US6075723A (en) * | 1997-12-15 | 2000-06-13 | Sony Corporation | Nonvolatile semiconductor memory device and IC memory card using same |
US6067248A (en) * | 1998-04-10 | 2000-05-23 | Samsung Electronics, Co., Ltd. | Nonvolatile semiconductor memory with single-bit and multi-bit modes of operation and method for performing programming and reading operations therein |
US6044022A (en) * | 1999-02-26 | 2000-03-28 | Tower Semiconductor Ltd. | Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays |
US6353553B1 (en) * | 2000-01-24 | 2002-03-05 | Mitsubishi Denki Kabushiki Kaisha | Nonvolatile semiconductor memory device having structure storing multivalued data and data storage system comprising the nonvolatile semiconductor memory device |
US6657891B1 (en) * | 2002-11-29 | 2003-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device for storing multivalued data |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107436852A (zh) * | 2017-07-21 | 2017-12-05 | 上海斐讯数据通信技术有限公司 | 一种接口切换装置及一种终端设备 |
CN107436852B (zh) * | 2017-07-21 | 2020-12-25 | 金华市智甄通信设备有限公司 | 一种接口切换装置及一种终端设备 |
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