CN1856839B - 使用多进制存储器中的一些存储块作为二进制存储块的非易失性半导体存储器件 - Google Patents
使用多进制存储器中的一些存储块作为二进制存储块的非易失性半导体存储器件 Download PDFInfo
- Publication number
- CN1856839B CN1856839B CN2004800273713A CN200480027371A CN1856839B CN 1856839 B CN1856839 B CN 1856839B CN 2004800273713 A CN2004800273713 A CN 2004800273713A CN 200480027371 A CN200480027371 A CN 200480027371A CN 1856839 B CN1856839 B CN 1856839B
- Authority
- CN
- China
- Prior art keywords
- order
- data
- write
- binary
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000005611 electricity Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 51
- 210000004027 cell Anatomy 0.000 description 41
- 238000005516 engineering process Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 10
- 230000008676 import Effects 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 3
- 241001269238 Data Species 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003338545A JP4270994B2 (ja) | 2003-09-29 | 2003-09-29 | 不揮発性半導体記憶装置 |
JP338545/2003 | 2003-09-29 | ||
PCT/JP2004/012420 WO2005031751A1 (en) | 2003-09-29 | 2004-08-23 | Nonvolatile semiconductor memory device which uses some memory blocks in multilevel memory as binary memory blocks |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1856839A CN1856839A (zh) | 2006-11-01 |
CN1856839B true CN1856839B (zh) | 2010-10-06 |
Family
ID=34386160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800273713A Active CN1856839B (zh) | 2003-09-29 | 2004-08-23 | 使用多进制存储器中的一些存储块作为二进制存储块的非易失性半导体存储器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060171210A1 (zh) |
EP (1) | EP1702337B1 (zh) |
JP (1) | JP4270994B2 (zh) |
KR (1) | KR100721062B1 (zh) |
CN (1) | CN1856839B (zh) |
TW (1) | TWI251833B (zh) |
WO (1) | WO2005031751A1 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4762986B2 (ja) * | 2005-06-30 | 2011-08-31 | スパンション エルエルシー | 不揮発性記憶装置、および不揮発性記憶装置の制御方法 |
US7433228B2 (en) * | 2005-09-20 | 2008-10-07 | Spansion Llc | Multi-bit flash memory device having improved program rate |
CN101273413B (zh) | 2005-09-29 | 2011-11-16 | 特科2000国际有限公司 | 使用单层单元和多层单元闪速存储器的便携式数据存储 |
JP4734110B2 (ja) * | 2005-12-14 | 2011-07-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100854970B1 (ko) | 2007-01-08 | 2008-08-28 | 삼성전자주식회사 | 멀티 레벨 셀 플래시 메모리 장치 및 그것의 프로그램 방법 |
KR100764747B1 (ko) | 2006-09-15 | 2007-10-08 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
JP5072301B2 (ja) * | 2006-09-25 | 2012-11-14 | 株式会社東芝 | 半導体集積回路装置及びその動作方法 |
JP2008108299A (ja) * | 2006-10-23 | 2008-05-08 | Toshiba Corp | 不揮発性半導体メモリ、及びメモリカード |
KR100794311B1 (ko) * | 2006-12-27 | 2008-01-11 | 삼성전자주식회사 | 프로그램 에러를 차단할 수 있는 멀티 비트 플래시 메모리장치의 프로그램 방법 |
US7646636B2 (en) | 2007-02-16 | 2010-01-12 | Mosaid Technologies Incorporated | Non-volatile memory with dynamic multi-mode operation |
TWI368224B (en) * | 2007-03-19 | 2012-07-11 | A Data Technology Co Ltd | Wear-leveling management and file distribution management of hybrid density memory |
KR101303177B1 (ko) * | 2007-06-22 | 2013-09-17 | 삼성전자주식회사 | 불휘발성 메모리 소자 및 그 동작 방법 |
KR101348364B1 (ko) | 2007-08-23 | 2014-01-07 | 삼성전자주식회사 | 메모리 셀의 이진 신호 판정 방법 및 장치 |
US7545673B2 (en) * | 2007-09-25 | 2009-06-09 | Sandisk Il Ltd. | Using MLC flash as SLC by writing dummy data |
KR101379820B1 (ko) * | 2007-10-17 | 2014-04-01 | 삼성전자주식회사 | 멀티-비트 프로그래밍 장치와 메모리 데이터 검출 장치 |
JP2009129477A (ja) * | 2007-11-20 | 2009-06-11 | Toshiba Corp | 不揮発性半導体記憶装置 |
US7843728B2 (en) | 2007-11-20 | 2010-11-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device |
TWI354996B (en) * | 2007-12-31 | 2011-12-21 | Phison Electronics Corp | Wear leveling method and controller thereof |
CN101911207B (zh) * | 2008-01-16 | 2014-05-07 | 富士通株式会社 | 半导体存储装置、控制装置、控制方法 |
KR101344347B1 (ko) | 2008-01-16 | 2013-12-24 | 삼성전자주식회사 | 프로그램 시작 전압을 조절하는 불휘발성 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리시스템 |
US8402203B2 (en) * | 2009-12-31 | 2013-03-19 | Seagate Technology Llc | Systems and methods for storing data in a multi-level cell solid state storage device |
US9165677B2 (en) * | 2011-05-17 | 2015-10-20 | Maxlinear, Inc. | Method and apparatus for memory fault tolerance |
KR20140020154A (ko) * | 2012-08-08 | 2014-02-18 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 소거 방법 |
US8887011B2 (en) * | 2012-09-13 | 2014-11-11 | Sandisk Technologies Inc. | Erased page confirmation in multilevel memory |
US9047974B2 (en) | 2012-10-04 | 2015-06-02 | Sandisk Technologies Inc. | Erased state reading |
WO2014113572A1 (en) | 2013-01-16 | 2014-07-24 | Maxlinear, Inc. | Dynamic random access memory for communications systems |
KR102053953B1 (ko) * | 2013-02-04 | 2019-12-11 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 프로그램 방법 |
TWI498893B (zh) * | 2013-10-31 | 2015-09-01 | Innostor Technology Corp | MLC memory write method in multiple environments |
JP6146675B2 (ja) * | 2014-06-03 | 2017-06-14 | コニカミノルタ株式会社 | 画像形成装置及びフラッシュメモリの制御方法並びに制御プログラム |
US9691452B2 (en) * | 2014-08-15 | 2017-06-27 | Micron Technology, Inc. | Apparatuses and methods for concurrently accessing different memory planes of a memory |
US9910594B2 (en) | 2015-11-05 | 2018-03-06 | Micron Technology, Inc. | Apparatuses and methods for concurrently accessing multiple memory planes of a memory during a memory access operation |
US9721639B1 (en) * | 2016-06-21 | 2017-08-01 | Micron Technology, Inc. | Memory cell imprint avoidance |
US11379231B2 (en) * | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1231481A (zh) * | 1998-03-05 | 1999-10-13 | 日本电气株式会社 | 多值型半导体存储器件及其错误消除方法 |
US5982663A (en) * | 1997-01-21 | 1999-11-09 | Samsung Electronics, Co., Ltd. | Nonvolatile semiconductor memory performing single bit and multi-bit operations |
US6490197B1 (en) * | 2001-08-02 | 2002-12-03 | Stmicroelectronics, Inc. | Sector protection circuit and method for flash memory devices |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5341330A (en) * | 1992-10-30 | 1994-08-23 | Intel Corporation | Method for writing to a flash memory array during erase suspend intervals |
US5745409A (en) * | 1995-09-28 | 1998-04-28 | Invox Technology | Non-volatile memory with analog and digital interface and storage |
JP3200012B2 (ja) * | 1996-04-19 | 2001-08-20 | 株式会社東芝 | 記憶システム |
JP3397600B2 (ja) * | 1996-11-01 | 2003-04-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6208542B1 (en) * | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
JP4299428B2 (ja) * | 2000-01-19 | 2009-07-22 | 三星電子株式会社 | 可変容量半導体記憶装置 |
US6363008B1 (en) * | 2000-02-17 | 2002-03-26 | Multi Level Memory Technology | Multi-bit-cell non-volatile memory with maximized data capacity |
FR2810152A1 (fr) * | 2000-06-13 | 2001-12-14 | St Microelectronics Sa | Memoire eeprom securisee comprenant un circuit de correction d'erreur |
JP2003022687A (ja) * | 2001-07-09 | 2003-01-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4437519B2 (ja) * | 2001-08-23 | 2010-03-24 | スパンション エルエルシー | 多値セルメモリ用のメモリコントローラ |
US6621746B1 (en) * | 2002-02-27 | 2003-09-16 | Microsoft Corporation | Monitoring entropic conditions of a flash memory device as an indicator for invoking erasure operations |
JP3920768B2 (ja) * | 2002-12-26 | 2007-05-30 | 株式会社東芝 | 不揮発性半導体メモリ |
-
2003
- 2003-09-29 JP JP2003338545A patent/JP4270994B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-23 WO PCT/JP2004/012420 patent/WO2005031751A1/en active IP Right Grant
- 2004-08-23 EP EP04772376.2A patent/EP1702337B1/en active Active
- 2004-08-23 CN CN2004800273713A patent/CN1856839B/zh active Active
- 2004-08-23 KR KR1020067005576A patent/KR100721062B1/ko active IP Right Grant
- 2004-08-26 TW TW093125649A patent/TWI251833B/zh not_active IP Right Cessation
-
2006
- 2006-03-29 US US11/391,299 patent/US20060171210A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982663A (en) * | 1997-01-21 | 1999-11-09 | Samsung Electronics, Co., Ltd. | Nonvolatile semiconductor memory performing single bit and multi-bit operations |
CN1231481A (zh) * | 1998-03-05 | 1999-10-13 | 日本电气株式会社 | 多值型半导体存储器件及其错误消除方法 |
US6490197B1 (en) * | 2001-08-02 | 2002-12-03 | Stmicroelectronics, Inc. | Sector protection circuit and method for flash memory devices |
Non-Patent Citations (2)
Title |
---|
US 2003/0007384 A1,全文. |
全文. |
Also Published As
Publication number | Publication date |
---|---|
TWI251833B (en) | 2006-03-21 |
EP1702337A1 (en) | 2006-09-20 |
EP1702337B1 (en) | 2018-11-14 |
KR100721062B1 (ko) | 2007-05-23 |
US20060171210A1 (en) | 2006-08-03 |
WO2005031751A1 (en) | 2005-04-07 |
TW200527432A (en) | 2005-08-16 |
KR20060086362A (ko) | 2006-07-31 |
JP2005108303A (ja) | 2005-04-21 |
CN1856839A (zh) | 2006-11-01 |
JP4270994B2 (ja) | 2009-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1856839B (zh) | 使用多进制存储器中的一些存储块作为二进制存储块的非易失性半导体存储器件 | |
CN102592668B (zh) | 非易失性存储设备和系统及编程非易失性存储设备的方法 | |
CN100547688C (zh) | 非易失性存储装置的编程校验方法 | |
KR101076981B1 (ko) | 전하 축적층과 제어 게이트를 갖는 메모리 셀을 구비한 반도체 장치 및 그 데이터 기입 방법 | |
US9244631B2 (en) | Lower page only host burst writes | |
KR102470606B1 (ko) | 불휘발성 메모리 장치 및 불휘발성 메모리 장치를 포함하는 스토리지 장치 | |
CN107045892B (zh) | 非易失性存储器和包括非易失性存储器的存储装置 | |
CN109003641B (zh) | 存储设备及其操作方法 | |
US9489143B2 (en) | Method for accessing flash memory and associated controller and memory device | |
KR101731408B1 (ko) | 플래시 메모리에 데이터를 기록하는 방법 및 관련 메모리 장치 및 플래시 메모리 | |
KR102242565B1 (ko) | 소거 상태 정보를 기초로 메모리 장치를 제어하는 메모리 컨트롤러 및 이의 동작 방법 | |
JPH1186576A (ja) | 不揮発性半導体記憶装置 | |
KR20110033221A (ko) | 애드 혹 플래시 메모리 기준 셀 | |
KR20170101000A (ko) | 메모리 장치의 프로그램 방법 및 이를 적용하는 메모리 시스템 | |
CN109815160A (zh) | 最后写入页搜索 | |
CN108735253A (zh) | 非易失性存储器存储系统 | |
KR20210024269A (ko) | 빠른 읽기 페이지를 포함하는 불휘발성 메모리 장치 및 이를 포함하는 스토리지 장치 | |
KR102416047B1 (ko) | 더미 셀의 제어 방법 및 반도체 장치 | |
CN111564171B (zh) | 非易失性存储器设备、包括其的存储设备及其操作方法 | |
CN110399093B (zh) | 包括非易失性存储器件和控制器的存储设备 | |
KR102149665B1 (ko) | 스토리지 장치, 메모리 카드, 및 스토리지 장치의 통신 방법 | |
US11182108B2 (en) | Memory system, memory controller, and operation method | |
JP2007257748A (ja) | 不揮発性記憶装置 | |
KR102606468B1 (ko) | 불휘발성 메모리 장치, 불휘발성 메모리 장치를 포함하는 스토리지 장치 및 불휘발성 메모리 장치에 데이터를 프로그램 하는 프로그램 방법 | |
KR20220107578A (ko) | 메모리 장치 및 그 동작 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161027 Address after: Tokyo, Japan Patentee after: Toshiba Corp. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo, Japan Patentee before: Toshiba Corp. Patentee before: Sandisk Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20190222 Address after: Tokyo, Japan Co-patentee after: SanDisk Technology Co.,Ltd. Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Co-patentee before: SanDisk Technology Co.,Ltd. Patentee before: Toshiba Corp. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo Patentee before: Japanese businessman Panjaya Co.,Ltd. Patentee before: SanDisk Technology Co.,Ltd. |
|
CP03 | Change of name, title or address |
Address after: Texas, USA Patentee after: Kaixia Co.,Ltd. Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Patentee before: SanDisk Technology Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220216 Address after: Tokyo Patentee after: Japanese businessman Panjaya Co.,Ltd. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Patentee before: SanDisk Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CI03 | Correction of invention patent |
Correction item: Patentee|Address|Patentee Correct: Toshiba memory Co., Ltd.|Tokyo|Shandi Technology Co., Ltd. False: Kaixia Co., Ltd.|Texas, USA|Toshiba memory Co., Ltd. Number: 09-01 Volume: 38 |
|
CI03 | Correction of invention patent | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Patentee before: SanDisk Technology Co.,Ltd. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo Patentee before: Japanese businessman Panjaya Co.,Ltd. Patentee before: SanDisk Technology Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220311 Address after: Tokyo Patentee after: Japanese businessman Panjaya Co.,Ltd. Patentee after: SanDisk Technology Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Patentee before: SanDisk Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |