KR100372385B1 - 박막형성방법 및 박막형성장치 - Google Patents

박막형성방법 및 박막형성장치 Download PDF

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Publication number
KR100372385B1
KR100372385B1 KR10-2000-0007829A KR20000007829A KR100372385B1 KR 100372385 B1 KR100372385 B1 KR 100372385B1 KR 20000007829 A KR20000007829 A KR 20000007829A KR 100372385 B1 KR100372385 B1 KR 100372385B1
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KR
South Korea
Prior art keywords
pulse
substrate
plasma
thin film
potential
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2000-0007829A
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English (en)
Korean (ko)
Other versions
KR20000062570A (ko
Inventor
미즈노시게루
사또마꼬또
다가미마나부
사또우히데끼
Original Assignee
아네르바 가부시키가이샤
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Publication of KR20000062570A publication Critical patent/KR20000062570A/ko
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Publication of KR100372385B1 publication Critical patent/KR100372385B1/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2000-0007829A 1999-03-12 2000-02-18 박막형성방법 및 박막형성장치 Expired - Fee Related KR100372385B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-066067 1999-03-12
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

Publications (2)

Publication Number Publication Date
KR20000062570A KR20000062570A (ko) 2000-10-25
KR100372385B1 true KR100372385B1 (ko) 2003-02-19

Family

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Family Applications (1)

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KR10-2000-0007829A Expired - Fee Related KR100372385B1 (ko) 1999-03-12 2000-02-18 박막형성방법 및 박막형성장치

Country Status (4)

Country Link
US (2) US6348238B1 (enExample)
JP (1) JP4351755B2 (enExample)
KR (1) KR100372385B1 (enExample)
TW (1) TW477824B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101761493B1 (ko) * 2012-08-28 2017-07-25 어드밴스드 에너지 인더스트리즈 인코포레이티드 스위칭 모드 이온 에너지 분포 시스템을 교정하기 위한 시스템 및 방법

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379383B1 (en) 1999-11-19 2002-04-30 Advanced Bio Prosthetic Surfaces, Ltd. Endoluminal device exhibiting improved endothelialization and method of manufacture thereof
US6551471B1 (en) * 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
CN1158403C (zh) * 1999-12-23 2004-07-21 西南交通大学 一种人工器官表面改性方法
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US6806201B2 (en) * 2000-09-29 2004-10-19 Hitachi, Ltd. Plasma processing apparatus and method using active matching
JP4673478B2 (ja) * 2000-10-05 2011-04-20 キヤノンアネルバ株式会社 バイアススパッタリング装置及びバイアススパッタリング方法
JP4553476B2 (ja) * 2000-10-24 2010-09-29 株式会社アルバック スパッタ方法及びスパッタ装置
JP4364420B2 (ja) * 2000-10-31 2009-11-18 エスアイアイ・ナノテクノロジー株式会社 垂直エッジのサブミクロン貫通孔を形成する方法
WO2002038080A2 (en) 2000-11-07 2002-05-16 Advanced Bio Prosthetic Surfaces, Ltd. Endoluminal stent, self-fupporting endoluminal graft and methods of making same
JP4995420B2 (ja) 2002-09-26 2012-08-08 アドヴァンスド バイオ プロスセティック サーフェシーズ リミテッド 高強度の真空堆積されたニチノール合金フィルム、医療用薄膜グラフト材料、およびそれを作製する方法。
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US6923891B2 (en) * 2003-01-10 2005-08-02 Nanofilm Technologies International Pte Ltd. Copper interconnects
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
JP4478111B2 (ja) * 2006-01-16 2010-06-09 アドバンス・デザイン株式会社 高周波電源装置
JP4478112B2 (ja) * 2006-01-16 2010-06-09 アドバンス・デザイン株式会社 高周波電源回路
GB2437080B (en) * 2006-04-11 2011-10-12 Hauzer Techno Coating Bv A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus
JP2007291439A (ja) * 2006-04-24 2007-11-08 Tokyo Electron Ltd 成膜方法、プラズマ成膜装置及び記憶媒体
WO2008117439A1 (ja) * 2007-03-27 2008-10-02 Fujitsu Limited 表面加工方法および記録媒体の製造方法
JP4607930B2 (ja) * 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
JP5442286B2 (ja) * 2009-03-25 2014-03-12 トーヨーエイテック株式会社 マグネトロンスパッタ装置及び電子部品の製造方法
US20100258169A1 (en) * 2009-04-13 2010-10-14 Applied Materials , Inc. Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
JP2011211168A (ja) * 2010-03-09 2011-10-20 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
WO2013027584A1 (ja) * 2011-08-19 2013-02-28 株式会社アルバック 真空処理装置及び真空処理方法
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
JP6088780B2 (ja) * 2012-10-02 2017-03-01 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2019051438A1 (en) 2017-09-11 2019-03-14 The Research Foundation For The State University Of New York SYSTEMS AND METHODS FOR THE SELF-CLEANING OF SOLAR PANELS USING AN ELECTRODYNAMIC SHIELD
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
JP7018978B2 (ja) * 2020-01-31 2022-02-14 株式会社日立ハイテク プラズマ処理装置
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918625A (ja) 1982-07-23 1984-01-31 Hitachi Ltd 薄膜製造方法
JPS59177919A (ja) * 1983-03-28 1984-10-08 Nippon Telegr & Teleph Corp <Ntt> 薄膜の選択成長法
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
JP2602276B2 (ja) 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
JP2607582B2 (ja) 1988-01-20 1997-05-07 株式会社日立製作所 スパッタによる成膜方法及びその装置
JP2598062B2 (ja) * 1988-01-29 1997-04-09 株式会社日立製作所 基板バイアス方式のマグネトロンスパッタリング方法及びその装置
JP2641725B2 (ja) 1988-01-29 1997-08-20 株式会社日立製作所 基板バイアス方式のスパッタリング方法及びその装置
JPH01195272A (ja) 1988-01-29 1989-08-07 Hitachi Ltd スパッタリング装置
US4963239A (en) 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
JPH02141572A (ja) * 1988-11-24 1990-05-30 Hitachi Ltd バイアススパツタリング法および装置
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5178739A (en) 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH04187764A (ja) * 1990-11-21 1992-07-06 Seiko Epson Corp スパッタ装置
US5212118A (en) * 1991-08-09 1993-05-18 Saxena Arjun N Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
DE4127317C2 (de) * 1991-08-17 1999-09-02 Leybold Ag Einrichtung zum Behandeln von Substraten
JPH05263227A (ja) * 1992-03-17 1993-10-12 Hitachi Ltd 薄膜形成法及びその装置
JP2973058B2 (ja) 1992-07-27 1999-11-08 日本真空技術株式会社 高真空・高速イオン処理装置
JP3231900B2 (ja) 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5545978A (en) 1994-06-27 1996-08-13 International Business Machines Corporation Bandgap reference generator having regulation and kick-start circuits
JPH0855821A (ja) * 1994-08-16 1996-02-27 Nec Corp 薄膜形成装置および薄膜形成方法
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
DE19518781C1 (de) * 1995-05-22 1996-09-05 Fraunhofer Ges Forschung Vakuumbeschichteter Verbundkörper und Verfahren zu seiner Herstellung
JP2783276B2 (ja) * 1995-07-04 1998-08-06 日本電気株式会社 半導体装置の製造方法
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5770023A (en) * 1996-02-12 1998-06-23 Eni A Division Of Astec America, Inc. Etch process employing asymmetric bipolar pulsed DC
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
JP4531145B2 (ja) 1997-05-27 2010-08-25 株式会社アルバック 極薄絶縁膜形成方法
JP4344019B2 (ja) * 1997-05-28 2009-10-14 キヤノンアネルバ株式会社 イオン化スパッタ方法
US6051114A (en) * 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101761493B1 (ko) * 2012-08-28 2017-07-25 어드밴스드 에너지 인더스트리즈 인코포레이티드 스위칭 모드 이온 에너지 분포 시스템을 교정하기 위한 시스템 및 방법

Also Published As

Publication number Publication date
JP4351755B2 (ja) 2009-10-28
US20010009220A1 (en) 2001-07-26
JP2000256845A (ja) 2000-09-19
KR20000062570A (ko) 2000-10-25
US6872289B2 (en) 2005-03-29
US6348238B1 (en) 2002-02-19
TW477824B (en) 2002-03-01

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