JP6114262B2 - 低圧法用のプラズマ浸漬モードにおけるイオン注入装置 - Google Patents
低圧法用のプラズマ浸漬モードにおけるイオン注入装置 Download PDFInfo
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- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000005192 partition Methods 0.000 claims description 10
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- 102100032533 ADP/ATP translocase 1 Human genes 0.000 description 2
- 101000768061 Escherichia phage P1 Antirepressor protein 1 Proteins 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
マイクロ波源:10−2mbarから10−1mbar
無線周波数源:10−3mbarから10−1mbar
ポンプ装置に接続された容器と、
該容器内に配置された、負にバイアスされた基板保持部と、
イオン化セルを備えたチャンバーを有するプラズマ供給装置であって、該チャンバーは、該容器の中に開放された終端部と先端部との間で伸長するほぼ円筒形の本体の形状であり、該チャンバーは、ガス供給開口を備えており、終端部は該本体に対して水頭損失を示す。
ポンプ装置に接続された容器と、
前記容器内に配置された、負にバイアスされた基板保持部と、
イオン化セルを備えた主チャンバーを有し、先端部から終端部まで伸長するほぼ円筒形の本体の形状のプラズマ供給装置と、を備え、
前記主チャンバーは、気体供給開口を備えており、
前記主チャンバーの終段部は、前記本体に対する圧力低下を生成する水頭損失手段を備え、
前記プラズマ供給装置は、前記終段部の先に配置された補助チェンバー(AUX)をも含み、前記補助チェンバーは、前記終端部において前記容器内に開いている。
接地された正極を有する電圧源と、
前記電圧源に並列に接続されたキャパシタと、
前記電圧源の負極と前記基板保持部ターンテーブルとの間に接続されたスイッチとを含むのが有利である。
表面に蓄積された電荷がアーク放電を生じる前に反転電圧に到達する程度に、プラズマパルスの期間が十分に長く、
プラズマ源によって生成される電子の平均自由工程が、容器内に存在するガス分子及びイオンと衝突し再結合する危険を冒さずに表面に到達することができる程度に、使用圧力が十分に低いことである。
Claims (14)
- ポンプ装置(VAC)に接続された容器(ENV)と、
前記容器(ENV)内に配置された、負にバイアス(HT)された基板保持部(PPS)と、
イオン化セル(BC1,ANT1)を備えた主チャンバー(PR,PR2)を有し、先端部から終端部まで伸長するほぼ円筒形の本体の形状のプラズマ供給装置(AP)と、を備えたイオン注入装置であって、
前記主チャンバー(PR,PR2)は、気体供給開口(ING,INL)を備えており、
前記主チャンバーの終段部(CL)は、前記本体(AP)に対する圧力低下を生成する水頭損失手段を備え、
前記プラズマ供給装置(AP)は、前記終段部(CL)の先に配置された補助チェンバー(AUX)をも含み、前記補助チェンバーは、前記終端部において前記容器(ENV)内に開いているイオン注入装置。 - 前記補助チェンバー(AUX)が第二のイオン化セル(BC2,ANT2)を備えた請求項1に記載のイオン注入装置。
- 前記プラズマ供給装置(AP)が前記容器(ENV)の容積よりも小さな容積を示す請求項1または2に記載のイオン注入装置。
- 前記終段部は、複数の孔を貫通させた隔壁(CL)の形状である請求項1から3のいずれかに記載のイオン注入装置。
- 前記終段部(ST)は、前記先端部と前記終端部との間に位置する前記本体(APB)の部分のいずれの面積よりも小さな面積の開口(VS)を示す請求項1から3のいずれかに記載のイオン注入装置。
- 前記第1のイオン化セルは、励起コイル(ANT1)及び閉じ込めコイル(BC1)を有する請求項1から5のいずれかに記載のイオン注入装置。
- 前記基板保持部(PPS)の軸(AXT)と前記プラズマ供給装置(AP)の軸(AXP)が2本の別個の軸である請求項1から6のいずれかに記載のイオン注入装置。
- 前記基板保持部(PPS)と前記プラズマ供給装置(AP)とが、調整可能な片寄りを示す請求項7に記載のイオン注入装置。
- 前記終段部が取り外し可能である請求項1から8のいずれかに記載のイオン注入装置。
- 少なくとも一つの追加のプラズマ供給装置を含む請求項1から9のいずれかに記載のイオン注入装置。
- 接地された正極を有する電圧源(SOU)と、
前記電圧源(SOU)に並列に接続されたキャパシタ(CDD)と、
前記電圧源(SOU)の負極と前記基板保持部ターンテーブル(PPS)との間に接続されたスイッチ(SW)とを含む、請求項1から10のいずれかに記載のイオン注入装置。 - 前記基板保持部ターンテーブル(PPS)が、その軸(AXT)の周りに回転動作可能である、請求項1から11のいずれかに記載のイオン注入装置。
- 前記基板保持部ターンテーブル(PPS)が、円板状であり、前記基板保持部回転テーブルと前記プラズマ供給装置(AP)との間の距離は、前記基板保持部の直径よりも大きい請求項1から12のいずれかに記載のイオン注入装置。
- 前記水頭損失手段(CL,VS)は、電気的に絶縁性である請求項1から13のいずれかに記載のイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1101763 | 2011-06-09 | ||
FR1101763A FR2976400B1 (fr) | 2011-06-09 | 2011-06-09 | Machine d'implantation ionique en mode immersion plasma pour procede basse pression. |
PCT/FR2012/000227 WO2012168575A2 (fr) | 2011-06-09 | 2012-06-07 | Machine d'implantation ionique en mode immersion plasma pour procédé basse pression |
Publications (2)
Publication Number | Publication Date |
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JP2014523607A JP2014523607A (ja) | 2014-09-11 |
JP6114262B2 true JP6114262B2 (ja) | 2017-04-12 |
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JP2014514125A Active JP6114262B2 (ja) | 2011-06-09 | 2012-06-07 | 低圧法用のプラズマ浸漬モードにおけるイオン注入装置 |
Country Status (11)
Country | Link |
---|---|
US (1) | US9534287B2 (ja) |
EP (1) | EP2718958B1 (ja) |
JP (1) | JP6114262B2 (ja) |
KR (1) | KR102017520B1 (ja) |
CN (1) | CN103765550B (ja) |
BR (1) | BR112013031288A2 (ja) |
ES (1) | ES2752878T3 (ja) |
FR (1) | FR2976400B1 (ja) |
RU (1) | RU2615161C2 (ja) |
SG (1) | SG194990A1 (ja) |
WO (1) | WO2012168575A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2976400B1 (fr) * | 2011-06-09 | 2013-12-20 | Ion Beam Services | Machine d'implantation ionique en mode immersion plasma pour procede basse pression. |
FR2981193B1 (fr) * | 2011-10-06 | 2014-05-23 | Ion Beam Services | Procede de commande d'un implanteur ionique en mode immersion plasma. |
FR3003687B1 (fr) | 2013-03-20 | 2015-07-17 | Mpo Energy | Procede de dopage de plaques de silicium |
FR3004465B1 (fr) * | 2013-04-11 | 2015-05-08 | Ion Beam Services | Machine d'implantation ionique presentant une productivite accrue |
FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
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2011
- 2011-06-09 FR FR1101763A patent/FR2976400B1/fr active Active
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2012
- 2012-06-07 KR KR1020147000429A patent/KR102017520B1/ko active IP Right Grant
- 2012-06-07 WO PCT/FR2012/000227 patent/WO2012168575A2/fr active Application Filing
- 2012-06-07 JP JP2014514125A patent/JP6114262B2/ja active Active
- 2012-06-07 CN CN201280027771.9A patent/CN103765550B/zh active Active
- 2012-06-07 RU RU2013150541A patent/RU2615161C2/ru active
- 2012-06-07 SG SG2013084777A patent/SG194990A1/en unknown
- 2012-06-07 US US14/117,166 patent/US9534287B2/en active Active
- 2012-06-07 ES ES12731516T patent/ES2752878T3/es active Active
- 2012-06-07 EP EP12731516.6A patent/EP2718958B1/fr active Active
- 2012-06-07 BR BR112013031288A patent/BR112013031288A2/pt not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US9534287B2 (en) | 2017-01-03 |
KR20140048198A (ko) | 2014-04-23 |
SG194990A1 (en) | 2013-12-30 |
BR112013031288A2 (pt) | 2017-06-06 |
WO2012168575A3 (fr) | 2013-10-03 |
FR2976400A1 (fr) | 2012-12-14 |
WO2012168575A2 (fr) | 2012-12-13 |
JP2014523607A (ja) | 2014-09-11 |
FR2976400B1 (fr) | 2013-12-20 |
ES2752878T3 (es) | 2020-04-06 |
US20140102370A1 (en) | 2014-04-17 |
KR102017520B1 (ko) | 2019-10-21 |
EP2718958B1 (fr) | 2019-08-28 |
EP2718958A2 (fr) | 2014-04-16 |
RU2013150541A (ru) | 2015-07-20 |
RU2615161C2 (ru) | 2017-04-04 |
CN103765550A (zh) | 2014-04-30 |
CN103765550B (zh) | 2016-06-01 |
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