JP4351755B2 - 薄膜作成方法および薄膜作成装置 - Google Patents

薄膜作成方法および薄膜作成装置 Download PDF

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Publication number
JP4351755B2
JP4351755B2 JP06606799A JP6606799A JP4351755B2 JP 4351755 B2 JP4351755 B2 JP 4351755B2 JP 06606799 A JP06606799 A JP 06606799A JP 6606799 A JP6606799 A JP 6606799A JP 4351755 B2 JP4351755 B2 JP 4351755B2
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Prior art keywords
pulse
substrate
plasma
thin film
voltage
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Expired - Lifetime
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JP06606799A
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English (en)
Japanese (ja)
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JP2000256845A5 (enExample
JP2000256845A (ja
Inventor
茂 水野
佐藤　　誠
学 田上
英樹 佐藤
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Canon Anelva Corp
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Canon Anelva Corp
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Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP06606799A priority Critical patent/JP4351755B2/ja
Priority to US09/453,883 priority patent/US6348238B1/en
Priority to KR10-2000-0007829A priority patent/KR100372385B1/ko
Priority to TW089102929A priority patent/TW477824B/zh
Publication of JP2000256845A publication Critical patent/JP2000256845A/ja
Priority to US09/799,609 priority patent/US6872289B2/en
Publication of JP2000256845A5 publication Critical patent/JP2000256845A5/ja
Application granted granted Critical
Publication of JP4351755B2 publication Critical patent/JP4351755B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP06606799A 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置 Expired - Lifetime JP4351755B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置
US09/453,883 US6348238B1 (en) 1999-03-12 2000-02-15 Thin film fabrication method and thin film fabrication apparatus
KR10-2000-0007829A KR100372385B1 (ko) 1999-03-12 2000-02-18 박막형성방법 및 박막형성장치
TW089102929A TW477824B (en) 1999-03-12 2000-02-21 Thin film fabrication method and thin film fabrication apparatus
US09/799,609 US6872289B2 (en) 1999-03-12 2001-03-07 Thin film fabrication method and thin film fabrication apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

Publications (3)

Publication Number Publication Date
JP2000256845A JP2000256845A (ja) 2000-09-19
JP2000256845A5 JP2000256845A5 (enExample) 2006-05-11
JP4351755B2 true JP4351755B2 (ja) 2009-10-28

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JP06606799A Expired - Lifetime JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

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US (2) US6348238B1 (enExample)
JP (1) JP4351755B2 (enExample)
KR (1) KR100372385B1 (enExample)
TW (1) TW477824B (enExample)

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Publication number Publication date
US20010009220A1 (en) 2001-07-26
JP2000256845A (ja) 2000-09-19
KR20000062570A (ko) 2000-10-25
US6872289B2 (en) 2005-03-29
US6348238B1 (en) 2002-02-19
TW477824B (en) 2002-03-01
KR100372385B1 (ko) 2003-02-19

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