TW477824B - Thin film fabrication method and thin film fabrication apparatus - Google Patents
Thin film fabrication method and thin film fabrication apparatus Download PDFInfo
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- TW477824B TW477824B TW089102929A TW89102929A TW477824B TW 477824 B TW477824 B TW 477824B TW 089102929 A TW089102929 A TW 089102929A TW 89102929 A TW89102929 A TW 89102929A TW 477824 B TW477824 B TW 477824B
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Links
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- 238000000034 method Methods 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 191
- 239000010408 film Substances 0.000 claims abstract description 84
- 150000002500 ions Chemical class 0.000 claims abstract description 81
- 238000004544 sputter deposition Methods 0.000 claims abstract description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 41
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- 235000013405 beer Nutrition 0.000 claims 1
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- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
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- PFFIDZXUXFLSSR-UHFFFAOYSA-N 1-methyl-N-[2-(4-methylpentan-2-yl)-3-thienyl]-3-(trifluoromethyl)pyrazole-4-carboxamide Chemical compound S1C=CC(NC(=O)C=2C(=NN(C)C=2)C(F)(F)F)=C1C(C)CC(C)C PFFIDZXUXFLSSR-UHFFFAOYSA-N 0.000 description 1
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- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 238000007781 pre-processing Methods 0.000 description 1
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- 230000002035 prolonged effect Effects 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06606799A JP4351755B2 (ja) | 1999-03-12 | 1999-03-12 | 薄膜作成方法および薄膜作成装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW477824B true TW477824B (en) | 2002-03-01 |
Family
ID=13305146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089102929A TW477824B (en) | 1999-03-12 | 2000-02-21 | Thin film fabrication method and thin film fabrication apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6348238B1 (enExample) |
| JP (1) | JP4351755B2 (enExample) |
| KR (1) | KR100372385B1 (enExample) |
| TW (1) | TW477824B (enExample) |
Families Citing this family (55)
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|---|---|---|---|---|
| US6379383B1 (en) | 1999-11-19 | 2002-04-30 | Advanced Bio Prosthetic Surfaces, Ltd. | Endoluminal device exhibiting improved endothelialization and method of manufacture thereof |
| US6551471B1 (en) * | 1999-11-30 | 2003-04-22 | Canon Kabushiki Kaisha | Ionization film-forming method and apparatus |
| CN1158403C (zh) * | 1999-12-23 | 2004-07-21 | 西南交通大学 | 一种人工器官表面改性方法 |
| JP4557400B2 (ja) * | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
| US6806201B2 (en) * | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| JP4673478B2 (ja) * | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
| JP4553476B2 (ja) * | 2000-10-24 | 2010-09-29 | 株式会社アルバック | スパッタ方法及びスパッタ装置 |
| JP4364420B2 (ja) * | 2000-10-31 | 2009-11-18 | エスアイアイ・ナノテクノロジー株式会社 | 垂直エッジのサブミクロン貫通孔を形成する方法 |
| WO2002038080A2 (en) | 2000-11-07 | 2002-05-16 | Advanced Bio Prosthetic Surfaces, Ltd. | Endoluminal stent, self-fupporting endoluminal graft and methods of making same |
| JP4995420B2 (ja) | 2002-09-26 | 2012-08-08 | アドヴァンスド バイオ プロスセティック サーフェシーズ リミテッド | 高強度の真空堆積されたニチノール合金フィルム、医療用薄膜グラフト材料、およびそれを作製する方法。 |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US6923891B2 (en) * | 2003-01-10 | 2005-08-02 | Nanofilm Technologies International Pte Ltd. | Copper interconnects |
| JP2004281232A (ja) * | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| JP4478111B2 (ja) * | 2006-01-16 | 2010-06-09 | アドバンス・デザイン株式会社 | 高周波電源装置 |
| JP4478112B2 (ja) * | 2006-01-16 | 2010-06-09 | アドバンス・デザイン株式会社 | 高周波電源回路 |
| GB2437080B (en) * | 2006-04-11 | 2011-10-12 | Hauzer Techno Coating Bv | A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus |
| JP2007291439A (ja) * | 2006-04-24 | 2007-11-08 | Tokyo Electron Ltd | 成膜方法、プラズマ成膜装置及び記憶媒体 |
| WO2008117439A1 (ja) * | 2007-03-27 | 2008-10-02 | Fujitsu Limited | 表面加工方法および記録媒体の製造方法 |
| JP4607930B2 (ja) * | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
| US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
| US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
| JP5442286B2 (ja) * | 2009-03-25 | 2014-03-12 | トーヨーエイテック株式会社 | マグネトロンスパッタ装置及び電子部品の製造方法 |
| US20100258169A1 (en) * | 2009-04-13 | 2010-10-14 | Applied Materials , Inc. | Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US9287092B2 (en) * | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| JP2011211168A (ja) * | 2010-03-09 | 2011-10-20 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| WO2013027584A1 (ja) * | 2011-08-19 | 2013-02-28 | 株式会社アルバック | 真空処理装置及び真空処理方法 |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US9210790B2 (en) * | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| WO2014036000A1 (en) | 2012-08-28 | 2014-03-06 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
| JP6088780B2 (ja) * | 2012-10-02 | 2017-03-01 | 株式会社アルバック | プラズマ処理方法及びプラズマ処理装置 |
| JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| WO2019051438A1 (en) | 2017-09-11 | 2019-03-14 | The Research Foundation For The State University Of New York | SYSTEMS AND METHODS FOR THE SELF-CLEANING OF SOLAR PANELS USING AN ELECTRODYNAMIC SHIELD |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| KR102877884B1 (ko) | 2017-11-17 | 2025-11-04 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| CN111788655B (zh) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | 对等离子体处理的离子偏置电压的空间和时间控制 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス， プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| JP7018978B2 (ja) * | 2020-01-31 | 2022-02-14 | 株式会社日立ハイテク | プラズマ処理装置 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
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| JPS5918625A (ja) | 1982-07-23 | 1984-01-31 | Hitachi Ltd | 薄膜製造方法 |
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| KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
| JPS61238958A (ja) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | 複合薄膜形成法及び装置 |
| US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
| JP2602276B2 (ja) | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
| DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
| JP2607582B2 (ja) | 1988-01-20 | 1997-05-07 | 株式会社日立製作所 | スパッタによる成膜方法及びその装置 |
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-
1999
- 1999-03-12 JP JP06606799A patent/JP4351755B2/ja not_active Expired - Lifetime
-
2000
- 2000-02-15 US US09/453,883 patent/US6348238B1/en not_active Expired - Lifetime
- 2000-02-18 KR KR10-2000-0007829A patent/KR100372385B1/ko not_active Expired - Fee Related
- 2000-02-21 TW TW089102929A patent/TW477824B/zh not_active IP Right Cessation
-
2001
- 2001-03-07 US US09/799,609 patent/US6872289B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP4351755B2 (ja) | 2009-10-28 |
| US20010009220A1 (en) | 2001-07-26 |
| JP2000256845A (ja) | 2000-09-19 |
| KR20000062570A (ko) | 2000-10-25 |
| US6872289B2 (en) | 2005-03-29 |
| US6348238B1 (en) | 2002-02-19 |
| KR100372385B1 (ko) | 2003-02-19 |
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