JP2000256845A5 - - Google Patents

Download PDF

Info

Publication number
JP2000256845A5
JP2000256845A5 JP1999066067A JP6606799A JP2000256845A5 JP 2000256845 A5 JP2000256845 A5 JP 2000256845A5 JP 1999066067 A JP1999066067 A JP 1999066067A JP 6606799 A JP6606799 A JP 6606799A JP 2000256845 A5 JP2000256845 A5 JP 2000256845A5
Authority
JP
Japan
Prior art keywords
pulse
substrate
thin film
plasma
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999066067A
Other languages
English (en)
Japanese (ja)
Other versions
JP4351755B2 (ja
JP2000256845A (ja
Filing date
Publication date
Priority claimed from JP06606799A external-priority patent/JP4351755B2/ja
Priority to JP06606799A priority Critical patent/JP4351755B2/ja
Application filed filed Critical
Priority to US09/453,883 priority patent/US6348238B1/en
Priority to KR10-2000-0007829A priority patent/KR100372385B1/ko
Priority to TW089102929A priority patent/TW477824B/zh
Publication of JP2000256845A publication Critical patent/JP2000256845A/ja
Priority to US09/799,609 priority patent/US6872289B2/en
Publication of JP2000256845A5 publication Critical patent/JP2000256845A5/ja
Publication of JP4351755B2 publication Critical patent/JP4351755B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP06606799A 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置 Expired - Lifetime JP4351755B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置
US09/453,883 US6348238B1 (en) 1999-03-12 2000-02-15 Thin film fabrication method and thin film fabrication apparatus
KR10-2000-0007829A KR100372385B1 (ko) 1999-03-12 2000-02-18 박막형성방법 및 박막형성장치
TW089102929A TW477824B (en) 1999-03-12 2000-02-21 Thin film fabrication method and thin film fabrication apparatus
US09/799,609 US6872289B2 (en) 1999-03-12 2001-03-07 Thin film fabrication method and thin film fabrication apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06606799A JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

Publications (3)

Publication Number Publication Date
JP2000256845A JP2000256845A (ja) 2000-09-19
JP2000256845A5 true JP2000256845A5 (enExample) 2006-05-11
JP4351755B2 JP4351755B2 (ja) 2009-10-28

Family

ID=13305146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06606799A Expired - Lifetime JP4351755B2 (ja) 1999-03-12 1999-03-12 薄膜作成方法および薄膜作成装置

Country Status (4)

Country Link
US (2) US6348238B1 (enExample)
JP (1) JP4351755B2 (enExample)
KR (1) KR100372385B1 (enExample)
TW (1) TW477824B (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379383B1 (en) 1999-11-19 2002-04-30 Advanced Bio Prosthetic Surfaces, Ltd. Endoluminal device exhibiting improved endothelialization and method of manufacture thereof
US6551471B1 (en) * 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
CN1158403C (zh) * 1999-12-23 2004-07-21 西南交通大学 一种人工器官表面改性方法
JP4557400B2 (ja) * 2000-09-14 2010-10-06 キヤノン株式会社 堆積膜形成方法
US6806201B2 (en) * 2000-09-29 2004-10-19 Hitachi, Ltd. Plasma processing apparatus and method using active matching
JP4673478B2 (ja) * 2000-10-05 2011-04-20 キヤノンアネルバ株式会社 バイアススパッタリング装置及びバイアススパッタリング方法
JP4553476B2 (ja) * 2000-10-24 2010-09-29 株式会社アルバック スパッタ方法及びスパッタ装置
JP4364420B2 (ja) * 2000-10-31 2009-11-18 エスアイアイ・ナノテクノロジー株式会社 垂直エッジのサブミクロン貫通孔を形成する方法
WO2002038080A2 (en) 2000-11-07 2002-05-16 Advanced Bio Prosthetic Surfaces, Ltd. Endoluminal stent, self-fupporting endoluminal graft and methods of making same
JP4995420B2 (ja) 2002-09-26 2012-08-08 アドヴァンスド バイオ プロスセティック サーフェシーズ リミテッド 高強度の真空堆積されたニチノール合金フィルム、医療用薄膜グラフト材料、およびそれを作製する方法。
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US6923891B2 (en) * 2003-01-10 2005-08-02 Nanofilm Technologies International Pte Ltd. Copper interconnects
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
JP4478111B2 (ja) * 2006-01-16 2010-06-09 アドバンス・デザイン株式会社 高周波電源装置
JP4478112B2 (ja) * 2006-01-16 2010-06-09 アドバンス・デザイン株式会社 高周波電源回路
GB2437080B (en) * 2006-04-11 2011-10-12 Hauzer Techno Coating Bv A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus
JP2007291439A (ja) * 2006-04-24 2007-11-08 Tokyo Electron Ltd 成膜方法、プラズマ成膜装置及び記憶媒体
WO2008117439A1 (ja) * 2007-03-27 2008-10-02 Fujitsu Limited 表面加工方法および記録媒体の製造方法
JP4607930B2 (ja) * 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
JP5442286B2 (ja) * 2009-03-25 2014-03-12 トーヨーエイテック株式会社 マグネトロンスパッタ装置及び電子部品の製造方法
US20100258169A1 (en) * 2009-04-13 2010-10-14 Applied Materials , Inc. Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
JP2011211168A (ja) * 2010-03-09 2011-10-20 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
WO2013027584A1 (ja) * 2011-08-19 2013-02-28 株式会社アルバック 真空処理装置及び真空処理方法
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
JP6088780B2 (ja) * 2012-10-02 2017-03-01 株式会社アルバック プラズマ処理方法及びプラズマ処理装置
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2019051438A1 (en) 2017-09-11 2019-03-14 The Research Foundation For The State University Of New York SYSTEMS AND METHODS FOR THE SELF-CLEANING OF SOLAR PANELS USING AN ELECTRODYNAMIC SHIELD
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス, プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
JP7018978B2 (ja) * 2020-01-31 2022-02-14 株式会社日立ハイテク プラズマ処理装置
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918625A (ja) 1982-07-23 1984-01-31 Hitachi Ltd 薄膜製造方法
JPS59177919A (ja) * 1983-03-28 1984-10-08 Nippon Telegr & Teleph Corp <Ntt> 薄膜の選択成長法
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPS61238958A (ja) * 1985-04-15 1986-10-24 Hitachi Ltd 複合薄膜形成法及び装置
US4588490A (en) * 1985-05-22 1986-05-13 International Business Machines Corporation Hollow cathode enhanced magnetron sputter device
JP2602276B2 (ja) 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
JP2607582B2 (ja) 1988-01-20 1997-05-07 株式会社日立製作所 スパッタによる成膜方法及びその装置
JP2598062B2 (ja) * 1988-01-29 1997-04-09 株式会社日立製作所 基板バイアス方式のマグネトロンスパッタリング方法及びその装置
JP2641725B2 (ja) 1988-01-29 1997-08-20 株式会社日立製作所 基板バイアス方式のスパッタリング方法及びその装置
JPH01195272A (ja) 1988-01-29 1989-08-07 Hitachi Ltd スパッタリング装置
US4963239A (en) 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US4911814A (en) * 1988-02-08 1990-03-27 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and ion source utilizing sputtering with microwave plasma
JPH02141572A (ja) * 1988-11-24 1990-05-30 Hitachi Ltd バイアススパツタリング法および装置
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5178739A (en) 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
JPH04187764A (ja) * 1990-11-21 1992-07-06 Seiko Epson Corp スパッタ装置
US5212118A (en) * 1991-08-09 1993-05-18 Saxena Arjun N Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
DE4127317C2 (de) * 1991-08-17 1999-09-02 Leybold Ag Einrichtung zum Behandeln von Substraten
JPH05263227A (ja) * 1992-03-17 1993-10-12 Hitachi Ltd 薄膜形成法及びその装置
JP2973058B2 (ja) 1992-07-27 1999-11-08 日本真空技術株式会社 高真空・高速イオン処理装置
JP3231900B2 (ja) 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5651865A (en) 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
US5545978A (en) 1994-06-27 1996-08-13 International Business Machines Corporation Bandgap reference generator having regulation and kick-start circuits
JPH0855821A (ja) * 1994-08-16 1996-02-27 Nec Corp 薄膜形成装置および薄膜形成方法
US5614060A (en) * 1995-03-23 1997-03-25 Applied Materials, Inc. Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal
DE19518781C1 (de) * 1995-05-22 1996-09-05 Fraunhofer Ges Forschung Vakuumbeschichteter Verbundkörper und Verfahren zu seiner Herstellung
JP2783276B2 (ja) * 1995-07-04 1998-08-06 日本電気株式会社 半導体装置の製造方法
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5770023A (en) * 1996-02-12 1998-06-23 Eni A Division Of Astec America, Inc. Etch process employing asymmetric bipolar pulsed DC
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
JP4531145B2 (ja) 1997-05-27 2010-08-25 株式会社アルバック 極薄絶縁膜形成方法
JP4344019B2 (ja) * 1997-05-28 2009-10-14 キヤノンアネルバ株式会社 イオン化スパッタ方法
US6051114A (en) * 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6093332A (en) * 1998-02-04 2000-07-25 Lam Research Corporation Methods for reducing mask erosion during plasma etching
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition

Similar Documents

Publication Publication Date Title
JP2000256845A5 (enExample)
US7446479B2 (en) High-density plasma source
US7750575B2 (en) High density plasma source
US20190368030A1 (en) Apparatus for generating high-current electrical discharges
US5015493A (en) Process and apparatus for coating conducting pieces using a pulsed glow discharge
KR100372385B1 (ko) 박막형성방법 및 박막형성장치
JP2006505906A (ja) 高密度プラズマを生成する方法および装置
KR101267459B1 (ko) 플라즈마 이온주입 장치 및 방법
TW201705179A (zh) 離子束裝置、離子植入裝置、離子束放出方法
TW200830390A (en) Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
US11021783B2 (en) Reactive sputtering apparatus and film formation method for composite metal compound film or mixture film using the same
KR20070040747A (ko) 선전리를 갖는 펄스 모드에서 마그네트론 양극 미분쇄에의한 증착
WO2002078407A3 (en) Neutral particle beam processing apparatus
JP2000054125A (ja) 表面処理方法および装置
WO2015025823A1 (ja) スパッタリング成膜装置及びスパッタリング成膜方法
RU2205893C2 (ru) Способ и устройство нанесения покрытий методом плазмохимического осаждения
RU2026413C1 (ru) Способ нагрева электропроводящих изделий в рабочей камере
Oskomov et al. Investigation of plasma ion composition generated by high-power impulse magnetron sputtering (HiPIMS) of graphite
JP2014095111A (ja) 成膜装置及び成膜装置の動作方法
RU2229182C1 (ru) Способ напыления рельефных подложек
KR100469552B1 (ko) 플라즈마 표면 처리 장치 및 방법
KR20100037974A (ko) 플라즈마 처리방법 및 처리장치
RU2423754C2 (ru) Способ и устройство для изготовления очищенных подложек или чистых подложек, подвергающихся дополнительной обработке
Bandorf et al. Modifications of coatings by DC-sputtering with superimposed HPPMS
KR200149909Y1 (ko) 스퍼터링 장치