JP2000256845A5 - - Google Patents
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- Publication number
- JP2000256845A5 JP2000256845A5 JP1999066067A JP6606799A JP2000256845A5 JP 2000256845 A5 JP2000256845 A5 JP 2000256845A5 JP 1999066067 A JP1999066067 A JP 1999066067A JP 6606799 A JP6606799 A JP 6606799A JP 2000256845 A5 JP2000256845 A5 JP 2000256845A5
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- substrate
- thin film
- plasma
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 description 47
- 150000002500 ions Chemical class 0.000 description 28
- 239000010409 thin film Substances 0.000 description 28
- 239000002245 particle Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06606799A JP4351755B2 (ja) | 1999-03-12 | 1999-03-12 | 薄膜作成方法および薄膜作成装置 |
| US09/453,883 US6348238B1 (en) | 1999-03-12 | 2000-02-15 | Thin film fabrication method and thin film fabrication apparatus |
| KR10-2000-0007829A KR100372385B1 (ko) | 1999-03-12 | 2000-02-18 | 박막형성방법 및 박막형성장치 |
| TW089102929A TW477824B (en) | 1999-03-12 | 2000-02-21 | Thin film fabrication method and thin film fabrication apparatus |
| US09/799,609 US6872289B2 (en) | 1999-03-12 | 2001-03-07 | Thin film fabrication method and thin film fabrication apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06606799A JP4351755B2 (ja) | 1999-03-12 | 1999-03-12 | 薄膜作成方法および薄膜作成装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000256845A JP2000256845A (ja) | 2000-09-19 |
| JP2000256845A5 true JP2000256845A5 (enExample) | 2006-05-11 |
| JP4351755B2 JP4351755B2 (ja) | 2009-10-28 |
Family
ID=13305146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06606799A Expired - Lifetime JP4351755B2 (ja) | 1999-03-12 | 1999-03-12 | 薄膜作成方法および薄膜作成装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6348238B1 (enExample) |
| JP (1) | JP4351755B2 (enExample) |
| KR (1) | KR100372385B1 (enExample) |
| TW (1) | TW477824B (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379383B1 (en) | 1999-11-19 | 2002-04-30 | Advanced Bio Prosthetic Surfaces, Ltd. | Endoluminal device exhibiting improved endothelialization and method of manufacture thereof |
| US6551471B1 (en) * | 1999-11-30 | 2003-04-22 | Canon Kabushiki Kaisha | Ionization film-forming method and apparatus |
| CN1158403C (zh) * | 1999-12-23 | 2004-07-21 | 西南交通大学 | 一种人工器官表面改性方法 |
| JP4557400B2 (ja) * | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
| US6806201B2 (en) * | 2000-09-29 | 2004-10-19 | Hitachi, Ltd. | Plasma processing apparatus and method using active matching |
| JP4673478B2 (ja) * | 2000-10-05 | 2011-04-20 | キヤノンアネルバ株式会社 | バイアススパッタリング装置及びバイアススパッタリング方法 |
| JP4553476B2 (ja) * | 2000-10-24 | 2010-09-29 | 株式会社アルバック | スパッタ方法及びスパッタ装置 |
| JP4364420B2 (ja) * | 2000-10-31 | 2009-11-18 | エスアイアイ・ナノテクノロジー株式会社 | 垂直エッジのサブミクロン貫通孔を形成する方法 |
| WO2002038080A2 (en) | 2000-11-07 | 2002-05-16 | Advanced Bio Prosthetic Surfaces, Ltd. | Endoluminal stent, self-fupporting endoluminal graft and methods of making same |
| JP4995420B2 (ja) | 2002-09-26 | 2012-08-08 | アドヴァンスド バイオ プロスセティック サーフェシーズ リミテッド | 高強度の真空堆積されたニチノール合金フィルム、医療用薄膜グラフト材料、およびそれを作製する方法。 |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US6923891B2 (en) * | 2003-01-10 | 2005-08-02 | Nanofilm Technologies International Pte Ltd. | Copper interconnects |
| JP2004281232A (ja) * | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| JP4478111B2 (ja) * | 2006-01-16 | 2010-06-09 | アドバンス・デザイン株式会社 | 高周波電源装置 |
| JP4478112B2 (ja) * | 2006-01-16 | 2010-06-09 | アドバンス・デザイン株式会社 | 高周波電源回路 |
| GB2437080B (en) * | 2006-04-11 | 2011-10-12 | Hauzer Techno Coating Bv | A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus |
| JP2007291439A (ja) * | 2006-04-24 | 2007-11-08 | Tokyo Electron Ltd | 成膜方法、プラズマ成膜装置及び記憶媒体 |
| WO2008117439A1 (ja) * | 2007-03-27 | 2008-10-02 | Fujitsu Limited | 表面加工方法および記録媒体の製造方法 |
| JP4607930B2 (ja) * | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
| US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
| US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
| JP5442286B2 (ja) * | 2009-03-25 | 2014-03-12 | トーヨーエイテック株式会社 | マグネトロンスパッタ装置及び電子部品の製造方法 |
| US20100258169A1 (en) * | 2009-04-13 | 2010-10-14 | Applied Materials , Inc. | Pulsed plasma deposition for forming microcrystalline silicon layer for solar applications |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US9287092B2 (en) * | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| JP2011211168A (ja) * | 2010-03-09 | 2011-10-20 | Toshiba Corp | 半導体装置の製造方法及び半導体製造装置 |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| WO2013027584A1 (ja) * | 2011-08-19 | 2013-02-28 | 株式会社アルバック | 真空処理装置及び真空処理方法 |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US9210790B2 (en) * | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| WO2014036000A1 (en) | 2012-08-28 | 2014-03-06 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
| JP6088780B2 (ja) * | 2012-10-02 | 2017-03-01 | 株式会社アルバック | プラズマ処理方法及びプラズマ処理装置 |
| JP6655310B2 (ja) * | 2015-07-09 | 2020-02-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| WO2019051438A1 (en) | 2017-09-11 | 2019-03-14 | The Research Foundation For The State University Of New York | SYSTEMS AND METHODS FOR THE SELF-CLEANING OF SOLAR PANELS USING AN ELECTRODYNAMIC SHIELD |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| KR102877884B1 (ko) | 2017-11-17 | 2025-11-04 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| CN111788655B (zh) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | 对等离子体处理的离子偏置电压的空间和时间控制 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| JP7018978B2 (ja) * | 2020-01-31 | 2022-02-14 | 株式会社日立ハイテク | プラズマ処理装置 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918625A (ja) | 1982-07-23 | 1984-01-31 | Hitachi Ltd | 薄膜製造方法 |
| JPS59177919A (ja) * | 1983-03-28 | 1984-10-08 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜の選択成長法 |
| KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
| JPS61238958A (ja) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | 複合薄膜形成法及び装置 |
| US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
| JP2602276B2 (ja) | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
| DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
| JP2607582B2 (ja) | 1988-01-20 | 1997-05-07 | 株式会社日立製作所 | スパッタによる成膜方法及びその装置 |
| JP2598062B2 (ja) * | 1988-01-29 | 1997-04-09 | 株式会社日立製作所 | 基板バイアス方式のマグネトロンスパッタリング方法及びその装置 |
| JP2641725B2 (ja) | 1988-01-29 | 1997-08-20 | 株式会社日立製作所 | 基板バイアス方式のスパッタリング方法及びその装置 |
| JPH01195272A (ja) | 1988-01-29 | 1989-08-07 | Hitachi Ltd | スパッタリング装置 |
| US4963239A (en) | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
| US4911814A (en) * | 1988-02-08 | 1990-03-27 | Nippon Telegraph And Telephone Corporation | Thin film forming apparatus and ion source utilizing sputtering with microwave plasma |
| JPH02141572A (ja) * | 1988-11-24 | 1990-05-30 | Hitachi Ltd | バイアススパツタリング法および装置 |
| EP0395415B1 (en) * | 1989-04-27 | 1995-03-15 | Fujitsu Limited | Apparatus for and method of processing a semiconductor device using microwave-generated plasma |
| JPH0747820B2 (ja) * | 1989-09-22 | 1995-05-24 | 株式会社日立製作所 | 成膜装置 |
| US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
| US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| JPH04187764A (ja) * | 1990-11-21 | 1992-07-06 | Seiko Epson Corp | スパッタ装置 |
| US5212118A (en) * | 1991-08-09 | 1993-05-18 | Saxena Arjun N | Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates |
| DE4127317C2 (de) * | 1991-08-17 | 1999-09-02 | Leybold Ag | Einrichtung zum Behandeln von Substraten |
| JPH05263227A (ja) * | 1992-03-17 | 1993-10-12 | Hitachi Ltd | 薄膜形成法及びその装置 |
| JP2973058B2 (ja) | 1992-07-27 | 1999-11-08 | 日本真空技術株式会社 | 高真空・高速イオン処理装置 |
| JP3231900B2 (ja) | 1992-10-28 | 2001-11-26 | 株式会社アルバック | 成膜装置 |
| US5651865A (en) | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
| US5545978A (en) | 1994-06-27 | 1996-08-13 | International Business Machines Corporation | Bandgap reference generator having regulation and kick-start circuits |
| JPH0855821A (ja) * | 1994-08-16 | 1996-02-27 | Nec Corp | 薄膜形成装置および薄膜形成方法 |
| US5614060A (en) * | 1995-03-23 | 1997-03-25 | Applied Materials, Inc. | Process and apparatus for etching metal in integrated circuit structure with high selectivity to photoresist and good metal etch residue removal |
| DE19518781C1 (de) * | 1995-05-22 | 1996-09-05 | Fraunhofer Ges Forschung | Vakuumbeschichteter Verbundkörper und Verfahren zu seiner Herstellung |
| JP2783276B2 (ja) * | 1995-07-04 | 1998-08-06 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
| US5770023A (en) * | 1996-02-12 | 1998-06-23 | Eni A Division Of Astec America, Inc. | Etch process employing asymmetric bipolar pulsed DC |
| JPH1079372A (ja) * | 1996-09-03 | 1998-03-24 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
| US5948215A (en) * | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
| JP4531145B2 (ja) | 1997-05-27 | 2010-08-25 | 株式会社アルバック | 極薄絶縁膜形成方法 |
| JP4344019B2 (ja) * | 1997-05-28 | 2009-10-14 | キヤノンアネルバ株式会社 | イオン化スパッタ方法 |
| US6051114A (en) * | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
| US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
| US6093332A (en) * | 1998-02-04 | 2000-07-25 | Lam Research Corporation | Methods for reducing mask erosion during plasma etching |
| US6117279A (en) * | 1998-11-12 | 2000-09-12 | Tokyo Electron Limited | Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition |
-
1999
- 1999-03-12 JP JP06606799A patent/JP4351755B2/ja not_active Expired - Lifetime
-
2000
- 2000-02-15 US US09/453,883 patent/US6348238B1/en not_active Expired - Lifetime
- 2000-02-18 KR KR10-2000-0007829A patent/KR100372385B1/ko not_active Expired - Fee Related
- 2000-02-21 TW TW089102929A patent/TW477824B/zh not_active IP Right Cessation
-
2001
- 2001-03-07 US US09/799,609 patent/US6872289B2/en not_active Expired - Lifetime
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