KR100306857B1 - 독출 및 기록을 고속으로 행하는 동기형 반도체 기억 장치 - Google Patents

독출 및 기록을 고속으로 행하는 동기형 반도체 기억 장치 Download PDF

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Publication number
KR100306857B1
KR100306857B1 KR1019990014720A KR19990014720A KR100306857B1 KR 100306857 B1 KR100306857 B1 KR 100306857B1 KR 1019990014720 A KR1019990014720 A KR 1019990014720A KR 19990014720 A KR19990014720 A KR 19990014720A KR 100306857 B1 KR100306857 B1 KR 100306857B1
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South Korea
Prior art keywords
address
signal
circuit
data
output
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Expired - Fee Related
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KR1019990014720A
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Korean (ko)
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KR19990087959A (ko
Inventor
오오이시쯔까사
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR19990087959A publication Critical patent/KR19990087959A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019990014720A 1998-05-22 1999-04-24 독출 및 기록을 고속으로 행하는 동기형 반도체 기억 장치 Expired - Fee Related KR100306857B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP98-141621 1998-05-22
JP14162198 1998-05-22
JP10252893A JP2000048567A (ja) 1998-05-22 1998-09-07 同期型半導体記憶装置
JP98-252893 1998-09-07

Publications (2)

Publication Number Publication Date
KR19990087959A KR19990087959A (ko) 1999-12-27
KR100306857B1 true KR100306857B1 (ko) 2001-10-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990014720A Expired - Fee Related KR100306857B1 (ko) 1998-05-22 1999-04-24 독출 및 기록을 고속으로 행하는 동기형 반도체 기억 장치

Country Status (3)

Country Link
US (3) US6134179A (enExample)
JP (1) JP2000048567A (enExample)
KR (1) KR100306857B1 (enExample)

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JP2001067866A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 同期型半導体記憶装置
JP4427847B2 (ja) * 1999-11-04 2010-03-10 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置
JP4588158B2 (ja) * 2000-03-28 2010-11-24 富士通セミコンダクター株式会社 半導体集積回路
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JP4600792B2 (ja) * 2000-07-13 2010-12-15 エルピーダメモリ株式会社 半導体装置
KR100359778B1 (ko) * 2000-07-19 2002-11-04 주식회사 하이닉스반도체 반도체 메모리 소자의 어드레스 발생 회로
JP4569915B2 (ja) * 2000-08-11 2010-10-27 エルピーダメモリ株式会社 半導体記憶装置
KR100374641B1 (ko) * 2000-11-24 2003-03-04 삼성전자주식회사 스탠바이 모드에서 지연동기 루프회로의 전력소모를감소시키기 위한 제어회로를 구비하는 반도체 메모리장치및 이의 파우워 다운 제어방법
KR100380409B1 (ko) * 2001-01-18 2003-04-11 삼성전자주식회사 반도체 메모리 소자의 패드배열구조 및 그의 구동방법
US6480429B2 (en) 2001-02-12 2002-11-12 Micron Technology, Inc. Shared redundancy for memory having column addressing
US7003643B1 (en) 2001-04-16 2006-02-21 Micron Technology, Inc. Burst counter controller and method in a memory device operable in a 2-bit prefetch mode
KR100772092B1 (ko) * 2001-06-29 2007-11-01 주식회사 하이닉스반도체 반도체 메모리 장치
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KR100438778B1 (ko) * 2001-11-07 2004-07-05 삼성전자주식회사 웨이브 파이프라인 구조를 갖는 동기식 반도체 메모리장치및 웨이브 파이프라인 제어방법
JP4111486B2 (ja) * 2002-01-31 2008-07-02 シャープ株式会社 半導体記憶装置および電子情報機器
US6678200B2 (en) * 2002-05-14 2004-01-13 Hewlett-Packard Development Company, Lp. Systems and methods for communicating with memory blocks
GB2409776B (en) * 2002-05-14 2005-10-12 Hewlett Packard Co Systems and methods for communicating with memory blocks
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
KR100465602B1 (ko) * 2002-09-10 2005-01-13 주식회사 하이닉스반도체 글로벌 입출력(ｇｉｏ) 라인에 리피터를 구비하는 반도체메모리 장치
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CN100437823C (zh) * 2003-04-23 2008-11-26 富士通株式会社 半导体存储装置
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US7084686B2 (en) * 2004-05-25 2006-08-01 Micron Technology, Inc. System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
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KR100618704B1 (ko) * 2004-12-20 2006-09-08 주식회사 하이닉스반도체 메모리 장치의 ｍｒｓ 설정동작 제어 방법
US7177208B2 (en) * 2005-03-11 2007-02-13 Micron Technology, Inc. Circuit and method for operating a delay-lock loop in a power saving manner
JP4982711B2 (ja) * 2005-03-31 2012-07-25 エスケーハイニックス株式会社 高速動作のためのメモリチップ構造
KR100724333B1 (ko) * 2005-10-05 2007-06-04 삼성전자주식회사 리던던시 플래그 신호의 응답마진이 향상되는 반도체메모리 장치 및 이를 이용한 리던던시 구동 방법
JP4828203B2 (ja) * 2005-10-20 2011-11-30 エルピーダメモリ株式会社 同期型半導体記憶装置
US7505349B2 (en) * 2006-09-07 2009-03-17 Honeywell International Inc. Refresh sequence control for multiple memory elements
US7554864B2 (en) * 2007-03-27 2009-06-30 Hynix Semiconductor Inc. Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits
KR100907008B1 (ko) * 2007-12-21 2009-07-08 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 데이터 마스킹 방법
KR100958806B1 (ko) 2008-09-01 2010-05-24 주식회사 하이닉스반도체 데이터 송수신 회로 및 제어 방법
KR101154001B1 (ko) * 2009-11-12 2012-06-08 에스케이하이닉스 주식회사 어드레스제어회로 및 반도체메모리장치
JP5538958B2 (ja) * 2010-03-05 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP5314640B2 (ja) * 2010-06-21 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
KR101198138B1 (ko) * 2010-10-29 2012-11-12 에스케이하이닉스 주식회사 반도체 메모리 장치
US9350386B2 (en) 2012-04-12 2016-05-24 Samsung Electronics Co., Ltd. Memory device, memory system, and method of operating the same
US9715909B2 (en) * 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
US9111624B2 (en) 2013-03-22 2015-08-18 Katsuyuki Fujita Semiconductor memory device
KR102407184B1 (ko) * 2017-10-31 2022-06-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 포함하는 반도체 시스템
KR102685463B1 (ko) * 2019-03-12 2024-07-17 에스케이하이닉스 주식회사 반도체 장치
TWI762852B (zh) * 2020-01-03 2022-05-01 瑞昱半導體股份有限公司 記憶體裝置及其操作方法
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IT202000016441A1 (it) 2020-07-07 2022-01-07 Sk Hynix Inc Comparatore di risorse di ridondanza per una architettura di bus, architettura di bus per un dispositivo di memoria che implementa un metodo migliorato di confronto e corrispondente metodo di confronto
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JPH07296595A (ja) * 1994-04-25 1995-11-10 Matsushita Electric Ind Co Ltd 半導体メモリ装置およびその駆動方法
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Also Published As

Publication number Publication date
US6134179A (en) 2000-10-17
US6473360B2 (en) 2002-10-29
KR19990087959A (ko) 1999-12-27
JP2000048567A (ja) 2000-02-18
US6272066B1 (en) 2001-08-07
US20010043507A1 (en) 2001-11-22

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