JP2000048567A - 同期型半導体記憶装置 - Google Patents

同期型半導体記憶装置

Info

Publication number
JP2000048567A
JP2000048567A JP10252893A JP25289398A JP2000048567A JP 2000048567 A JP2000048567 A JP 2000048567A JP 10252893 A JP10252893 A JP 10252893A JP 25289398 A JP25289398 A JP 25289398A JP 2000048567 A JP2000048567 A JP 2000048567A
Authority
JP
Japan
Prior art keywords
signal
address
circuit
memory cell
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10252893A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000048567A5 (enExample
Inventor
Tsukasa Oishi
司 大石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10252893A priority Critical patent/JP2000048567A/ja
Priority to US09/246,726 priority patent/US6134179A/en
Priority to KR1019990014720A priority patent/KR100306857B1/ko
Publication of JP2000048567A publication Critical patent/JP2000048567A/ja
Priority to US09/593,957 priority patent/US6272066B1/en
Priority to US09/882,037 priority patent/US6473360B2/en
Publication of JP2000048567A5 publication Critical patent/JP2000048567A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP10252893A 1998-05-22 1998-09-07 同期型半導体記憶装置 Pending JP2000048567A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10252893A JP2000048567A (ja) 1998-05-22 1998-09-07 同期型半導体記憶装置
US09/246,726 US6134179A (en) 1998-05-22 1999-02-09 Synchronous semiconductor memory device capable of high speed reading and writing
KR1019990014720A KR100306857B1 (ko) 1998-05-22 1999-04-24 독출 및 기록을 고속으로 행하는 동기형 반도체 기억 장치
US09/593,957 US6272066B1 (en) 1998-05-22 2000-06-15 Synchronous semiconductor memory device capable of high speed reading and writing
US09/882,037 US6473360B2 (en) 1998-05-22 2001-06-18 Synchronous semiconductor memory device capable of high speed reading and writing

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP14162198 1998-05-22
JP10-141621 1998-05-22
JP10252893A JP2000048567A (ja) 1998-05-22 1998-09-07 同期型半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2000048567A true JP2000048567A (ja) 2000-02-18
JP2000048567A5 JP2000048567A5 (enExample) 2005-11-04

Family

ID=26473825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10252893A Pending JP2000048567A (ja) 1998-05-22 1998-09-07 同期型半導体記憶装置

Country Status (3)

Country Link
US (3) US6134179A (enExample)
JP (1) JP2000048567A (enExample)
KR (1) KR100306857B1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075623A3 (en) * 2000-03-30 2002-07-04 Micron Technology Inc Zero-latency-zero bus turnaround synchronous flash memory
KR100958806B1 (ko) 2008-09-01 2010-05-24 주식회사 하이닉스반도체 데이터 송수신 회로 및 제어 방법
JP2012003826A (ja) * 2010-06-21 2012-01-05 Renesas Electronics Corp 半導体装置

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JP3706772B2 (ja) * 1999-07-12 2005-10-19 富士通株式会社 半導体集積回路
JP2001067866A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 同期型半導体記憶装置
JP4427847B2 (ja) * 1999-11-04 2010-03-10 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置
JP4588158B2 (ja) * 2000-03-28 2010-11-24 富士通セミコンダクター株式会社 半導体集積回路
JP4600792B2 (ja) * 2000-07-13 2010-12-15 エルピーダメモリ株式会社 半導体装置
KR100359778B1 (ko) * 2000-07-19 2002-11-04 주식회사 하이닉스반도체 반도체 메모리 소자의 어드레스 발생 회로
JP4569915B2 (ja) * 2000-08-11 2010-10-27 エルピーダメモリ株式会社 半導体記憶装置
KR100374641B1 (ko) * 2000-11-24 2003-03-04 삼성전자주식회사 스탠바이 모드에서 지연동기 루프회로의 전력소모를감소시키기 위한 제어회로를 구비하는 반도체 메모리장치및 이의 파우워 다운 제어방법
KR100380409B1 (ko) * 2001-01-18 2003-04-11 삼성전자주식회사 반도체 메모리 소자의 패드배열구조 및 그의 구동방법
US6480429B2 (en) 2001-02-12 2002-11-12 Micron Technology, Inc. Shared redundancy for memory having column addressing
US7003643B1 (en) 2001-04-16 2006-02-21 Micron Technology, Inc. Burst counter controller and method in a memory device operable in a 2-bit prefetch mode
KR100772092B1 (ko) * 2001-06-29 2007-11-01 주식회사 하이닉스반도체 반도체 메모리 장치
WO2003009301A1 (en) * 2001-07-17 2003-01-30 Mitsubishi Denki Kabushiki Kaisha Storage device
KR100438778B1 (ko) * 2001-11-07 2004-07-05 삼성전자주식회사 웨이브 파이프라인 구조를 갖는 동기식 반도체 메모리장치및 웨이브 파이프라인 제어방법
JP4111486B2 (ja) * 2002-01-31 2008-07-02 シャープ株式会社 半導体記憶装置および電子情報機器
US6678200B2 (en) * 2002-05-14 2004-01-13 Hewlett-Packard Development Company, Lp. Systems and methods for communicating with memory blocks
GB2409776B (en) * 2002-05-14 2005-10-12 Hewlett Packard Co Systems and methods for communicating with memory blocks
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
KR100465602B1 (ko) * 2002-09-10 2005-01-13 주식회사 하이닉스반도체 글로벌 입출력(ｇｉｏ) 라인에 리피터를 구비하는 반도체메모리 장치
US7035150B2 (en) * 2002-10-31 2006-04-25 Infineon Technologies Ag Memory device with column select being variably delayed
CN100437823C (zh) * 2003-04-23 2008-11-26 富士通株式会社 半导体存储装置
KR100499417B1 (ko) * 2003-07-15 2005-07-05 주식회사 하이닉스반도체 디디알 에스디램에서의 링잉 현상 방지 방법 및 그 장치
US6956786B2 (en) * 2003-12-04 2005-10-18 Infineon Technologies North America Corp. Random access memory with optional inaccessible memory cells
KR100618697B1 (ko) * 2004-04-28 2006-09-08 주식회사 하이닉스반도체 메모리 장치의 데이타 전송 라인의 구조
US7084686B2 (en) * 2004-05-25 2006-08-01 Micron Technology, Inc. System and method for open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
US7078951B2 (en) * 2004-08-27 2006-07-18 Micron Technology, Inc. System and method for reduced power open-loop synthesis of output clock signals having a selected phase relative to an input clock signal
KR100618704B1 (ko) * 2004-12-20 2006-09-08 주식회사 하이닉스반도체 메모리 장치의 ｍｒｓ 설정동작 제어 방법
US7177208B2 (en) * 2005-03-11 2007-02-13 Micron Technology, Inc. Circuit and method for operating a delay-lock loop in a power saving manner
JP4982711B2 (ja) * 2005-03-31 2012-07-25 エスケーハイニックス株式会社 高速動作のためのメモリチップ構造
KR100724333B1 (ko) * 2005-10-05 2007-06-04 삼성전자주식회사 리던던시 플래그 신호의 응답마진이 향상되는 반도체메모리 장치 및 이를 이용한 리던던시 구동 방법
JP4828203B2 (ja) * 2005-10-20 2011-11-30 エルピーダメモリ株式会社 同期型半導体記憶装置
US7505349B2 (en) * 2006-09-07 2009-03-17 Honeywell International Inc. Refresh sequence control for multiple memory elements
US7554864B2 (en) * 2007-03-27 2009-06-30 Hynix Semiconductor Inc. Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits
KR100907008B1 (ko) * 2007-12-21 2009-07-08 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 데이터 마스킹 방법
KR101154001B1 (ko) * 2009-11-12 2012-06-08 에스케이하이닉스 주식회사 어드레스제어회로 및 반도체메모리장치
JP5538958B2 (ja) * 2010-03-05 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
KR101198138B1 (ko) * 2010-10-29 2012-11-12 에스케이하이닉스 주식회사 반도체 메모리 장치
US9350386B2 (en) 2012-04-12 2016-05-24 Samsung Electronics Co., Ltd. Memory device, memory system, and method of operating the same
US9715909B2 (en) * 2013-03-14 2017-07-25 Micron Technology, Inc. Apparatuses and methods for controlling data timing in a multi-memory system
US9111624B2 (en) 2013-03-22 2015-08-18 Katsuyuki Fujita Semiconductor memory device
KR102407184B1 (ko) * 2017-10-31 2022-06-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 포함하는 반도체 시스템
KR102685463B1 (ko) * 2019-03-12 2024-07-17 에스케이하이닉스 주식회사 반도체 장치
TWI762852B (zh) * 2020-01-03 2022-05-01 瑞昱半導體股份有限公司 記憶體裝置及其操作方法
EP4095694A4 (en) * 2020-02-24 2022-12-14 Huawei Technologies Co., Ltd. MEMORY, CHIP AND METHOD OF STORING REPAIR INFORMATION OF A MEMORY
IT202000016441A1 (it) 2020-07-07 2022-01-07 Sk Hynix Inc Comparatore di risorse di ridondanza per una architettura di bus, architettura di bus per un dispositivo di memoria che implementa un metodo migliorato di confronto e corrispondente metodo di confronto
DE102021202376A1 (de) 2021-03-11 2022-09-15 Infineon Technologies Ag Datenspeichervorrichtung und Verfahren zum Schreiben von Informationen in eine Datenspeichervorrichtung
CN116230048B (zh) * 2021-12-06 2025-11-21 长鑫存储技术有限公司 地址刷新电路、方法、存储器和电子设备

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075623A3 (en) * 2000-03-30 2002-07-04 Micron Technology Inc Zero-latency-zero bus turnaround synchronous flash memory
KR100958806B1 (ko) 2008-09-01 2010-05-24 주식회사 하이닉스반도체 데이터 송수신 회로 및 제어 방법
US8036050B2 (en) 2008-09-01 2011-10-11 Hynix Semiconductor Inc. Circuit for transmitting and receiving data and control method thereof
JP2012003826A (ja) * 2010-06-21 2012-01-05 Renesas Electronics Corp 半導体装置

Also Published As

Publication number Publication date
US6134179A (en) 2000-10-17
KR100306857B1 (ko) 2001-10-29
US6473360B2 (en) 2002-10-29
KR19990087959A (ko) 1999-12-27
US6272066B1 (en) 2001-08-07
US20010043507A1 (en) 2001-11-22

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