KR100260119B1 - 반도체 처리장치 - Google Patents

반도체 처리장치 Download PDF

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Publication number
KR100260119B1
KR100260119B1 KR1019940014586A KR19940014586A KR100260119B1 KR 100260119 B1 KR100260119 B1 KR 100260119B1 KR 1019940014586 A KR1019940014586 A KR 1019940014586A KR 19940014586 A KR19940014586 A KR 19940014586A KR 100260119 B1 KR100260119 B1 KR 100260119B1
Authority
KR
South Korea
Prior art keywords
case
chamber
pressure
processing
cylindrical portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940014586A
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English (en)
Korean (ko)
Other versions
KR950001878A (ko
Inventor
세이시 무라카미
Original Assignee
히가시 데쓰로
동경 엘렉트론주식회사
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Application filed by 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 히가시 데쓰로
Publication of KR950001878A publication Critical patent/KR950001878A/ko
Application granted granted Critical
Publication of KR100260119B1 publication Critical patent/KR100260119B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H10P72/0436—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1019940014586A 1993-06-24 1994-06-24 반도체 처리장치 Expired - Fee Related KR100260119B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-179845 1993-06-24
JP17984593A JP3165938B2 (ja) 1993-06-24 1993-06-24 ガス処理装置

Publications (2)

Publication Number Publication Date
KR950001878A KR950001878A (ko) 1995-01-04
KR100260119B1 true KR100260119B1 (ko) 2000-07-01

Family

ID=16072914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014586A Expired - Fee Related KR100260119B1 (ko) 1993-06-24 1994-06-24 반도체 처리장치

Country Status (6)

Country Link
US (1) US5462603A (enExample)
JP (1) JP3165938B2 (enExample)
KR (1) KR100260119B1 (enExample)
GB (1) GB2279366B (enExample)
SG (1) SG46325A1 (enExample)
TW (1) TW280940B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100638406B1 (ko) * 1999-03-04 2006-10-24 어플라이드 머티어리얼스, 인코포레이티드 기판 지지대 내의 열구배를 감소시키기 위한 방법 및 장치
WO2012015140A1 (ko) * 2010-07-28 2012-02-02 국제엘렉트릭코리아 주식회사 기판 서셉터 및 그것을 갖는 증착 장치
KR101165477B1 (ko) * 2003-12-01 2012-07-13 가부시키가이샤 브리지스톤 세라믹 히터 유닛
KR101315412B1 (ko) * 2006-09-27 2013-10-07 엘아이지에이디피 주식회사 기판증착기 및 이를 이용한 증착방법
WO2019093657A1 (ko) * 2017-11-09 2019-05-16 주식회사 미코 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

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* Cited by examiner, † Cited by third party
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KR20190052804A (ko) * 2017-11-09 2019-05-17 주식회사 미코 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치
KR102441541B1 (ko) * 2017-11-09 2022-09-08 주식회사 미코세라믹스 마운트, 상기 마운트를 포함하는 히터 및 상기 히터를 포함하는 증착 장치

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US5462603A (en) 1995-10-31
JP3165938B2 (ja) 2001-05-14
TW280940B (enExample) 1996-07-11
KR950001878A (ko) 1995-01-04
GB2279366B (en) 1996-12-18
GB2279366A (en) 1995-01-04

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