564503 A7 B7 五、發明説明（1 ) (技術領域） 本發明是關於一種熱處理方法及熱處理裝置。 (請先閲讀背面之注意事項再填寫本頁) (背景技術） 例如在半導體元件的製程，對於作爲被處理體的半導 體晶圓，爲了進行氧化，擴散，成膜等處理，使用各種熱 處理裝置，眾知有例如可一次地進行複數被處理體的熱處 理的分批式的縱型熱處理裝置。 在此種縱型熱處理裝置，將複數被處理體朝高度方向 以所定間隔所載置的被處理體保持具收容於處理容器內。 又，使用設於處理容器的周圍的筒狀加熱器，藉由依據經 由設於處理容器內的溫度檢測器所檢測的溫度資料被設定 的發熱量施以加熱，而對於被處理體進行所定熱處理。 經濟部智慧財產局員工消費合作社印製 在對於半導體晶圓進行熱處理時，爲了達成均句膜厚 及特性良好的成膜等，除了各該半導體晶圓面內的溫度均 勻性較高之外，被要求被載置於互相不同高度的位置的半 導體晶圓等的溫度均勻性較高。對於此種要求，將處理容 器內朝上下方向區分成複數加熱領域，藉由隨著各該加熱 領域的發熱量施以加熱，而進行被處理體的熱處理。 如上述的熱處理裝置中，溫度檢測器是由如石英玻璃 所構成，藉由朝上方向延伸處理容器內的直管狀保護管， 及在該保護管中配設在對應於處理容器的各該加熱領域的 位置的熱電偶所構成。由此，對應於處理容器內的各該力口 熱領域的位置的溫度被檢測，而依據所檢測的溫度資料， 適用中國國家標準（CNS)A4規格（210X297公釐) ~~" 一 " 564503 A7 B7 五、發明説明（2 ) 使得筒狀加熱器被調整。 (請先閲讀背面之注意事項再填寫本頁} 又，在上述縱型熱處理裝置，與半導體晶圓遠離的位 置進行溫度檢測之故，因而實際上藉由溫度檢測器所檢沏I 的溫度與半導體晶圓的溫度之間，不可避免地發生誤差， 結果，有很難正確地進行筒狀加熱器的溫度控制的缺點問 題。 (發明之槪要） 本發明是依據如上述的事項而創作者，其目的是在於 提供一種以高精度可檢測被處理體的溫度，因此針對被處 理體可穩定地進行所期望的熱處理的熱處理的熱處理方法 及確實地執行此種方法的熱處理裝置。 本發明是一種熱處理方法，屬於將朝高度方向隔著所 定間隔保持複數被處理體的被處理體保持具收容於處理容 器內的過程，及設於處理容器的加熱手段動作成具有目標 發熱量而藉由加熱被處理體，針對被處理體進行所定熱處 理的熱處理方法，·其特徵爲： 經濟部智慧財產局員工消費合作社印製 加熱手段是依據經由以下的過程（1 )至（3 )所求 得的目標發熱量被動作； (1 )以被處理體的溫度設定成爲目標加熱溫度的基 準發熱量使加熱手段進行動作，且經由在處理容器內配置 成朝高度方向延伸的溫度控制用的溫度檢測器，檢測被處 理體的控制對象溫度的過程； (2 )經由在被插入於被處理體間的'狀態所配置的溫 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 564503 A7 _____ B7 _ 五、發明説明（3 ) 度修正用的溫度檢測器，檢測被處理體的控制目標溫度的 過程； (3 )對比經由溫度控制用的溫度檢測器所檢測的被 處理體的控制對象溫度，與經由溫度修正用的溫度檢測器 所檢測的被處理體的控制目標溫度，而隨著控制目標溫度 與控制對象溫度的溫度差來修正基準發熱量，以決定目標 發熱量的過程。 在此，「實質上一致」是指溫度差爲± 0 . 5至 ± 1 _ 0 t的範圍內的狀態。 本發明是欲求出目標發熱量之際，控制對象溫度是加 熱手段以基準發熱量進行動作之後，在實質上安定之狀態 中，經由溫度控制用的溫度檢測器被檢測，爲其特徵的熱 處理方法。 本發明是欲求出目標發熱量之際，被處理體的溫度經 由溫度控制器，在互相不同高度位置的被處理體間被檢測 ，爲其特徵的熱處理方法。 本發明是欲求出目標發熱量之際，被處理體的溫度經 由溫度控制器，在該被處理體的中心位置被檢測，爲其特 徵的熱處理方法。 本發明是欲求出目標發熱量之際，被處理體的溫度經 由溫度控制器，在該熱處理體的中心位置與邊緣部被檢測 ，爲其特徵的熱處理方法。 本發明是熱處理被處理體時，溫度修正用的溫度檢測 器在未存在於被處理體間的狀態下進行，爲其特徵的被處 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閲讀背面之注意事 •項再填、 :寫本頁) 經濟部智慧財產局員工消費合作社印製 564503 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（4 ) 理方法。 本發明是一種熱處理裝置，其特徵爲：具備 處理容器，及 被收納於處理容器內，在將複數被處理體成爲水平的 狀態朝高度方向隔著所定間隔加以保持的被處理體保持具 ，及 設於處理容器外方的加熱手段，及 設於處理容器內，使得被處理體的溫度成爲該被處理 體之處理所進行的目標加熱溫度地檢測爲了控制加熱手段 的發熱量所參照的控制對象溫度的溫度控制用的溫度檢測 器，及 設於處理容器內，爲了修正加熱手段的發熱量被參照 ，檢測與目標加熱溫度實質上一致的控制目標溫度的溫度 修正用的溫度檢測器； 依據在溫度修正用的溫度檢測器所檢測的控制目標溫 度，及在溫度控制用的溫度檢測器所檢測的控制對象溫度 ，經由控制部修正加熱手段的發熱量。 本發明的溫度修正用的溫度檢測器是具有：朝高度方 向延伸的直管狀的保護管本體部，及在從該保護管本體部 朝高度方向互相地遠離之狀態，分別朝與保護管本體部的 管軸方向成正交的方向延伸的複數支管部；在各該支管部 配設有熱電偶；各該支管部配設成被插入在互相不同高度 位置的被處理體間，爲其特徵的熱處理裝置。 本發明的溫度修正用的溫度檢測器的保護管本體部， 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 564503 A7 ___ B7 ______ 五、發明説明（5 ) 是設在以管軸爲中心能轉動之狀態，爲其特徵的熱處理裝 置。 本發明是溫度修正用的溫度檢測器中，在保護本體部 的基端側部分，全周全面地形成環狀溝，爲其特徵的熱處 理裝置。 本發明的溫度修正用的溫度檢測器，是保護管本體部 及支管部內作成減壓狀態，周時保護管本體部的基準側部 分被氣密地密封，爲其特徵的熱處理裝置。 本發明的一種温度檢測器，屬於溫度修正用的溫度檢 測器，其特徵\ :具有 朝高度方向延伸的直管狀的保護管本體部，及 在從該保護管本體部朝高度方向互相地遠離之狀態， 分別朝與保護管本體部的管軸方向成正交的方向·延伸的複 數支管部； 在各該支管部配設有熱電偶； 各該支管部配設成被插入在互相不同高度位置的被處 理體間。 依照本發明，針對欲進行熱處理的被處理體進行處理 之際，求出事先所實施的目標發熱量的時候，藉由配置於 被處理體間的溫度修正用的溫度檢測器以高精度檢測被處 理體的溫度。之後，經由溫度修正用的溫度檢測器的控制 目標溫度實質上一致於須熱處理被處理體的目標加熱溫度 地，隨著經由溫度修正用的溫度檢測器的控制目標溫度， 及經由溫度控制用的溫度檢測器的控制對象溫度的溫度差 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 29*7公釐） I ^ 裝 ^ 訂 . (請先閱讀背面之注意事項再填寫本頁) 564503 A7 B7 五、發明説明（6 ) 來修正加熱手段的基準發熱量。由此，可正確地進行控制 加熱手段的熱量。 (請先閱讀背面之注意事項再填寫本頁) 又，溫度修正用的溫度檢測器是具有保護管本體與支 管部，而熱電偶配設在支管部內之故，因而不會對於被處 理體發生金屬污染或是粒子等地，可檢測被處理體的溫度 (實施發明所用的最佳形態） 以下，對於本案發明，一面參照圖式，一面例舉藉由 C V D法對於被處理體用以進行成膜處理的縱型熱處理裝 置作爲例子加以說明。 該縱型熱處理裝置是配置成朝高度方向（在第1圖中 爲上下方向）地延伸，具備上端被開放的直管狀內管 1 1 A，及隔著所定間隔同心狀地配置於其周圍，而上端 被封閉的外管1 1 B所構成的具雙重管構造的處理容器 1 1 ;處理容器1 1的下方空間是成爲裝載區域L。該裝 載區域L是對於作爲下述的被處理體保持具的晶舟1 7， 進行被處理體的半導體晶圓的移載等的區域。 經濟部智慧財產局員工消費合作社印製 內管11A及外管11B是均由耐熱性及耐蝕性優異 的例如高純度的石英玻璃所形成。 在該處理容器1 1的外管1 1 B的下端部，設有於上 端具有凸緣部分1 2 A的短圓筒狀岐管1 2。在該凸緣部 分1 2 A，經由如0型環等的密封手段（未圖示）而設在 外管1 1 B下端部的下端凸緣部分1 1 1藉由凸緣推件 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 564503 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（7 ) 1 3施以接合，使得處理容器1 1的外管1 1 B成爲被固 定的狀態。 處理容器1 1的內管1 1A是比外管1 1 B的下端面 更朝下方延伸，以被插入在岐管1 2內的狀態下，經由設 於該岐管1 2的內面的環狀內管支持部1 4被支持著。 在該縱型熱處理裝置的處理谷益1 1的縱剖面中，在 岐管1 2的一方側壁，用以將處理氣體或惰性氣體導入到 處理容器1 1內的氣體供給配管1 5，設成氣密地貫穿該 岐管1 2的側壁，並設成在內管1 1 A內朝上方延伸之狀 態。在該氣體供給配管1 5，連接有未圖示的氣體供給源 〇 又，在岐管1 2的另一方側壁，設有排氣處理容器 1 1內的排氣部1 6，在該排氣部1 6，連接具有如真空 泵及壓力控制機構的排氣機構（未圖示），由此，處理容 器1 1內被控制成所定壓力。 在處理容器1 1的下方，設有朝上下方向驅動而將被 處理體保持具的晶舟1 7搬入，搬出在處理容器1 1內的 昇降機構2 1。該昇降機構2 1是具備開閉處理容器1 1 的下端開口 1 1 C的圓板狀盤體2 0。 晶舟1 7是由如尚純度的石英玻璃所形成；在晶舟 1 7如10 0至150枚左右的複數枚半導體晶圓成爲水 平狀態，以如5 . 2至2 0 . 8 m m的所定間隔（間距） 多段地載置於上下。 在昇降機構2 1的蓋體2 0，以貫通蓋體2 0的狀態 (請先閱讀背面之注意事 4 ，項再填· 裝— 寫本頁) 訂 會 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10- 564503 A7 _ B7 五、發明説明（8 ) (請先閱讀背面之注意事項再填寫本頁) 下設有與處理容器1 1平行地朝上方延伸的柱狀支持構件 2 2。在該支持構件2 2，晶舟1 7所載置的圓板狀舟支 持件2 2 A —體地設於其上部；支持構件2 2是被連接於 設在蓋體2 0下部的旋轉驅動手段2 3。 又，在蓋體2 0的上部，以插通支持構件2 2的狀態 下設有如石英所形成的保溫筒2 4。 在處理容器1 1的外側，以圍繞處理容器1 1的周圍 的狀態下設有用以將被收容於處理容器1 1內的半導體晶 圓加熱成所定處理溫度的加熱手段的筒狀加熱器3 0。 筒狀加熱器3 0是具有線狀電阻發熱體螺旋狀或蛇行 狀地配設於內面的圓筒狀隔熱材（未圖示）。該電阻發熱 體是被連接於依據藉由下述的溫度檢測器4 0所檢測的半 導體晶圓的溫度資料，使得該半導體晶圓成爲事先所設定 的溫度狀態而控制需供給的電力大小的控制部3 1。 處理容器11內是在高度方向被分成如圖示例三個的 複數加熱領域Z 1至Z 3 ;筒狀加熱器3 0是針對於各該 加熱領域Z 1至Z 3，獨立地進行溫度控制，亦即成爲進 行帶控制。 經濟部智慧財產局員工消費合作社印製 在處理容器1 1的上方，以與處理容器1 1內的晶舟 1 7相對向之狀態，設有與筒狀加熱器3 0的上端面平行 地配置的面狀加熱器3 2。經由該面狀加熱器3 2，有效 地防止來自處理容器11上方的散熱，而在其面內以高均 勻性可加熱處理半導體晶圓。 面狀加熱器3 2是具有配線於如板狀基材上的線狀電 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - 564503 A 7 B7 五、發明説明（9 ) 發熱體；該電阻發熱體是被連接於控制部3 1。 在該縱型熱處理裝置的處理容器1 1內，配置有檢測 半導體晶圓的控制對象溫度的溫度控制用的溫度檢測器（ 以下簡稱爲控制用溫度檢測器）。該溫度檢測器4 0的檢 沏1値是爲了使得半導體晶圓成爲目標加熱溫度地控制筒狀 加熱器3 0及面狀加熱器3 2的發熱量而被參照。 具體而言，控制用溫度檢測器4 0是氣密地貫通岐管 1 2的下部壁，同時配設與內管1 1 A平行地朝高度方向 延伸形成在被收容於處理容器1 1內的所定位置的晶舟 1 7與內管1 1 A之間的大約環狀空間內。控制用溫度檢 測器4 0中比內管1 1 A的上端面所延伸的前端側部分， 是朝處理容器1 1的中心位置而被保持在晶舟1 7的半導 體晶圓平行地延伸。 如第2圖所示，控制用溫度檢測器4 0是由如透明石 英玻璃所形成，前端側部朝水平方向（在第2圖爲右方向 )延伸而折曲的整體大約L形的保護管4 1，及在該保護 管4 1內，配設在對應於依面狀加熱器3 2的加熱領域的 位置（例如相當於面狀加熱器3 2的中心位置的位置）及 分別對應於依筒狀加熱器3 0的加熱領域Z 1至Z 3的位 置的複數（在本實施例爲合計4具）的熱電偶4 2所構成 〇 保護管4 1是作成其前端部分被關閉的狀態，同時其 基端側部分藉由如黏接劑等封閉材4 5被封閉，經由該封 閉部，使得熱電偶4 2的金屬素線被拉出至外部。熱電偶 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 請 先 閱 讀 背 & 之 注 意 事 t 經濟部智慧財產局員工消費合作社印製 -12- 564503 A7 B7 五、發明説明（10) 4 2的金屬素線是經補償導線被連接於控制部3 1的輸入 端子。 (請先閲讀背面之注意事項再填寫本頁) 保護管4 1的基端側部分是氣密地被密封也可以，又 ，在保護管4 1內，爲了防止熱電偶4 2的氧化，例如塡 充氮氣體等惰性氣體也可以。 在熱電偶4 2的各該金屬素線，以金屬素線被插通之 狀態下設有例如氧化鋁陶瓷所構成的絕緣構件4 4 ;該絕 緣構件4 4是具有長度爲如3 m m左右的套筒狀的複數焊 珠4 4 A，此些焊珠4 4 A是配置成朝長度方向互相連接 狀態。又，在第2圖中，爲了方便，將各該絕緣構件表示 作爲一絕緣構件。 在該縱型熱處理裝置的處理容器1 1內，設有與檢測 目標加熱溫度實質上一致的半導體晶圓的控制目標溫度的 溫度修正用的溫度檢測器（以下稱爲修正用溫度檢測器） 5 0。半導體晶圓的控制目標溫度是在修正筒狀加熱器 3 0及面狀加熱器3 2的基準發量時被參照。 經濟部智慧財產局員工消費合作社印製 如第3圖所示，修正用溫度檢測器5 0是具有保護管 本體部5 2，及在保護管本體部5 2的前端側部分朝水平 方向延伸的第1支管部53A ;保護管本體部52是與支 管部5 3 A —起構成大約L形。從該保護管本體部5 2與 第1支管部53八在高度方向以互相遠離之狀態，在與各 該保護管本體5 2的管軸方向並正交的水平方向延伸有複 數（圖示例爲兩個）支管部5 3 B，5 3 C。在各該支 5 3 A , 5 3 B，5 3 C的前端部，配設有熱電偶5 9。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） -13- 564503 A7 B7 五、發明説明（11) 又，由保護管本體部52，及支管部53A，5 3 B , 5 3 C構成保護管。 (請先閲讀背面之注意事項再填寫本頁) 在熱電偶5 4的各該金屬素線，以金屬素線被插通之 狀態下設有例如氧化鋁陶瓷所構成的絕緣構件5 6 ;該絕 緣構件5 6是具有長度爲如3 m m左右的套筒狀的複數焊 珠5 6 A，此些焊珠5 6 A是配置成朝長度方向互相連接 狀態。 各該支管部53A， 53B，53C是其前端部分作 成關閉狀態，同時保護管本體部5 2的基端側部分被封閉 ，而經由該封閉部，朝外部拉出熱電偶5 4的金屬素線。 又，熱電偶5 4的金屬素線是經由補償導線被連接到控制 部3 1的輸入端子。 又，保護管本體部5 2的基端側部分被氣密地被封閉 也可以，而在保護管5 1內，爲了防止熱電偶5 4的氧化 ，塡充如氮氣體（N 2氣體）等惰性氣體也可以。 經濟部智慧財產局員工消費合作社印製 具體而言，如第4圖所示，在保護管5 1的基端側部 分，例如水泥等的封閉材5 7塡充在保護管5 1內，形成 氣密的封閉構造。連續於保護管5 1的端部而朝外方延伸 的端部構造體6 0設成絕緣構件5 6被插通之狀態。該端 部構造體6 0是具有熱收縮管6 2設於內面的如石英玻璃 所構成的補助管6 1，及被插入在該補助管6 1內的如特 氟龍所構成的套筒狀絕緣構件6 3。 又，在保護管5 1的保護管5 1的保護管本體部5 2 的基端側部分，具體而言，在位於處理容器1 1的內部部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 564503 A 7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（12) 位與位於處理容器1 1的外部部位的境界部分，環狀溝 5 8形成在其全周全面。岐管1 2之下部壁嵌合於該環狀 溝5 8，並使得修正用溫度檢測器5 0配設在處理容器 1 1內。 對於半導體晶圓進行所定熱處理之際，事先求出筒狀 加熱器3 2的目標發熱量時（實施目標發熱量取得操作時 )，使用著修正用溫度檢測器5 0。 又，修正用溫度檢測器5 0是以朝上方延伸的保護管 本體部5 2的管軸作爲中心成爲轉動自如之狀態，在欲實 施發熱量取得操作時，將保護管本體部5 2以管軸作爲中 心進行轉動。由此各該支管軸5 3 A，5 3 B，成爲被插 入在藉由晶舟1 7被保持所對應的高度位置的半導體晶圓 間的狀態。 各該支管部53A，5 3 B , 53C被插入在互相不 同高度位置的半導體晶圓所形成較理想，又，配設有熱電 偶5 4的支管部5 3 A，5 3 B，5 3 C的前端部分作成 達到相當於半導體晶圓的中心位置的位置之狀態較理想。 又，也可配設晶圓中心位置與晶圓邊緣部可同時地測 定的熱電偶。 在圖示例，連續於保護管5 1上端並朝水平方向（在 第3圖中爲左方向）延伸的第1支管部53八，配置於欲 處理的半導體晶圓中位於最上部者的上部空間；在修正溫 度檢測器5 0位於最下位置的第3支管部5 3 C，配置於 欲處理的半導體晶圓中位於最下部者的上部空間；位於第 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 564503 A7 B7 五、發明説明（13) (請先閱讀背面之注意事項再填寫本頁) 1支管部5 3 A與第3支管部5 3 C之間的高度位準的第 2支管部5 3 B，配置於欲處理的半導體晶圓中位於中央 部者的上部空間。 以下，說明針對於在以上構成的縱型熱處理裝置所實 施的半導體晶圓的熱處理。 首先，在裝載領域L中，進行半導體晶圓的移載而半 導體晶圓被保持的狀態的晶舟1 7被載置於晶舟支持件 2 2 A上。這時候蓋體2 0位於最下位置。之後，經由昇 降機構2 1使得蓋體2 0朝上方向驅動，晶舟1 7從下端 開口11C被搬進處理容器11內。然後，經由蓋體20 使得處理容器1 1的下端開口 1 1 C成爲被氣密性封閉之 狀態，排氣手段被作動使得處理容器1 1內被減壓成如約 6 X 1 0 — 4 P a的所定壓力。此時，例如在晶舟1 7的最 上部及最下部的載置部，載置有模擬性半導體晶圓。 然後，實行設定筒狀加熱器3 0及面狀加熱器3 2的 目標發熱量的目標發熱量取得操作。亦即，修正用溫度檢 測器5 0，以其保護管本體部5 2的管軸作爲中心被轉動 ，使得各該支管部53A，5 3 B , 53C被插進到互相 經濟部智慧財產局員工消費合作社印製 不同高度位置的半導體晶圓間。之後，經由控制用溫度檢 測器4 0 —面檢測控制對象溫度，一面筒狀加熱器3 0及 面狀加熱器3 2，在設成半導體晶圓成爲所定目標加熱溫 度的基準發熱量進行運轉。 然後，經由控制用溫度檢測器4 0所檢測的控制對象 溫度成爲實質上安定之狀態後，仍繼續進行依控制溫度檢 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16 - 564503 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（14) 測器4 0的溫度檢測。 在此，所謂「實質上安定之狀態」乃指藉由控制用溫 度檢測器4 0所求得的控制對象溫度的變動寬度在如 ± 0 . 5至1 . 〇 °C之範圍內的狀態；例如，在運轉筒狀 加熱器及面狀加熱器3 2而經過兩小時以上時，一般達到 充分安定的狀態。 之後，經由控制用溫度檢測器4 0的各該熱電偶4 2 所檢測的各控制對象溫度，及經由修正用溫度檢測器5 0 的各該熱電偶5 4所檢測的各控制目標溫度被輸入到控制 部3 1。經由修正用溫度檢測器5 0所檢測的控制目標溫 度，與須處理半導體晶圓的目標加熱溫度實質上一致時， 則在控制部3 1，對比各該對應的高度位準的溫度資料。 另一方面，經由修正用溫度檢測器5 0所檢測的控制 目標溫度與須處理半導體晶圓的目標加熱溫度實質上不一 致時，則在控制部3 1再設定筒狀加熱器3 0及面狀加熱 器3 2的基準發熱量而重複進行上述過程。 例如在控制部3 1，針對被載置在對應於加熱領域 Z 1的位置的半導體晶圓，隨著依修正用溫度檢測器5 0 的控制目標溫度，及依控制溫度檢測器4 0的控制對象溫 度的溫度差，來決定對於被載置在對應於依筒狀加熱器 3 0的加熱領域Z 1的位置的半導體晶圓的筒狀加熱器 3 0的目標發熱量。 如上之操作也在其他加熱領域Z 2，Z 3進行。 之後，修正用溫度檢測器5 0被轉動，作成支管部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ (請先閲讀背面之注意事項再填寫本頁) 564503 A7 B7 五、發明説明（15) 5 3 A， 5 3 B， 5 3 C未存在於半導體晶圓間的狀態。 (請先閱讀背面之注意事項再填寫本頁) 然後，在經由旋轉驅動手段2 3使晶舟1 7未旋轉之狀態 ，自氣體供給配管1 5有適量處理氣體被導進到處理容器 1 1內，並對於半導體晶圓進行成膜處理。 依照上述縱型熱處理裝置，對於半導體晶圓進行熱處 理時在事先所實施的目標發熱量取得操作中，藉由修正用 溫度檢測器5 0以高精度檢測半導體晶圓的溫度。爲了此 ，將依修正用溫度檢測器5 0的控制目標溫度實質上一致 於須熱處理半導體晶圓的控制目標溫度地，隨著依修正用 溫度檢測器5 0的控制目標溫度與依控制用溫度檢測器 4 0的控制對象溫度的溫度差，可修正基準發熱量。由此 ，可正確地控制筒狀加熱器3 0及面狀加熱器3 2的發熱 量，因此，對於半導體晶圓可安定地進行所期望的熱處理 〇 經濟部智慧財產局員工消費合作社印製 又，在依控制用溫度檢測器4 0的檢測溫度安定之狀 態下，實施目標發熱量取得操作之故，因而可確實地取得 依修正用溫度檢測器5 0的控制目標溫度，及依控制用溫 度檢測器4 0的控制對象溫度的正確溫度差，因此，可正 確地進行控制筒狀加熱器3 0及筒狀加熱器3 2的發熱量 〇 又，修正用溫度檢測器5 0的各該支管5 3 A , 5 3 B， 5 3 C配置於互相地不同高度位置的半導體晶圓 間之故，因而對於各該高度位置上獨立而可進行溫度控制 。因此，實際上欲熱處理半導體晶圓時，不管半導體晶圓 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 564503 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（16) 所配置的高度位置，對於所有半導體晶圓，均在實質上均 勻而且所期望之溫度狀態下，可進行熱處理。 又，配設有熱電偶54， 54， 54的支管部53A ，5 3 B , 5 3 C的前端部分，達到相當於半導體晶圓的 中心位置的位置之故，因而實質上僅可檢測來自半導體晶 圓的放射光，可用高精度地檢測半導體晶圓之溫度。 又，修正用溫度檢測器5 0的熱電偶5 4，5 4， 54是配設於支管部53A，5 3 B , 53C內之故，換 言之，熱電偶5 4的金屬素線等未曝露在處理容器1 1內 的環境之故，因而可確實地防止發生對於如粒子或半導體 晶圓的金屬污染等。由此，與將熱電偶直接地配設於半導 體晶圓而檢測半導體晶圓之溫度的情形相比較，設定目標 發熱量的操作後所需要的石英工模的更換作業或洗淨處理 變成不需要，對於半導體晶圓可有利地實施所期望的熱處 理。 又，在保護管5 1的基端側部分，環狀溝5 8形成在 其全周全面之故，因而可將環狀溝5 8嵌合在岐管12而 可作爲停止件的功能。如此，處理容器1 1內作成減壓狀 態時，也可確實地防止修正用溫度檢測器5 0被拉進處理 容器11內。 如上所述.，修正用溫度檢測器5 0的保護管5 1內作 成惰性氣體環境，惟將保護管內5 1作成減壓狀態，可將 保護管5 1的基端側部分作成氣密地封閉的構成。 在該情形，處理容器1 1內作成減壓狀態時，即使藉 (請先閲讀背面之注意事 #1 項再填、 裝—— :寫本頁) 訂 本紙張尺度適用中.國國家標準（CNS ) A4規格（210X297公釐） 564503 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（17) 由任何原因而損壞保護管5 1的情形，也可確實地防止該 破片飛散至處理容器1 1內。 又，對於控制用溫度檢測器4 0，也可作成同樣的構 成。 (實施例） 以下，說明依表示於第1圖的構成的縱型熱處理裝置 的實施例。 2 0 0 m m晶圓徑的2 5枚半導體晶圓以1 5 . 6 m m節距朝上下方向多段地載置，同時將模擬性半導體晶 圓被載置於最上部及最下部的晶舟1 7收容於處理容器 1 1內。之後以所定的基準發熱量運行筒狀加熱器3 0及 面狀加熱器3 2使得所有半導體晶圓成爲8 0 0 °C (目標 加熱溫度）。如此，自開始加熱經過兩小時之後，依控制 用溫度檢測器4 0及修正用溫度檢測器5 0的溫度檢測， 得到依控制用溫度檢測器4 0所檢測的控制對象溫度是 8 0 0 °C，而依修正用溫度檢測器5 〇所檢測的控制目標 溫度是8 0 3 °C。 之後，控制對象溫度成爲7 9 8 t地，配合控制目標 溫度與控制對象溫度的溫度差3 °C來修正基準發熱量而設 定目標發熱量，並以所設定的目標發熱量來運行筒狀加熱 器3 0及面狀加熱器3 2。此時，依修正用溫度檢測器 5 0所檢測的控制目標溫度成爲8 0 〇。(：，對於所有半導 體晶握可進行所期望的熱處理。將表示溫度安定時的半導 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X29?公釐） I----：---：--^装--------訂------- (請先閱讀背面之注意事項再填寫本頁) 20 564503 A7 B7 ___ 五、發明説明（18 ) 體晶圓，控制用溫度檢測器4 0及修正用溫度檢測器5 0 的溫度的經時性變化的圖表表示於第5圖。 (請先閲讀背面之注意事項再填寫本頁) 以上，說明本發明的實施形態，惟本發明是並不被限 定於上述形態者，可加以各種變更。 例如修正用溫度檢測器的支管部之數量，支管部被插 入的位置及其他構成，是並未特別加以限制者，例如配合 一次處理中須處理的被處理體之數量，大小（外徑尺寸） 可適當地變更。 又，在上述實施例，修正用溫度檢測器的支管部作成 對應於依筒狀加熱器的各該加熱領域的狀態所配置的狀態 ，惟不必配置在對應於依筒狀加熱器的加熱領域的位置。 對於配設於保護管本體部的前端側部分及各該支管部 的熱電偶的數量及位置，也並未特別加以限制者，例如複 數熱電偶在支管部內以水平方向互相地遠離之狀態配設於 一個支管部也可以。具體而言，在晶圓中心位置與晶圓邊 緣部分別配置熱電偶前端。 又，目標發熱量取得操作，是並不是實際上須處理的 被處理體，而對於模擬性被處理體進行也可以。 經濟部智慧財產局員工消費合作社印製 又，在本實施形態，將控制用溫度檢測器4 0設於內 管1 1 A內，惟貫通加熱器3 0，3 2俾檢測加熱器溫度 也可以。 本發明是並不被限定於成膜處理，例如可適用於進行 氧化處理，擴散處理，退火處理等的熱處理裝置。 依照本發明的熱處理方法。 本紙張尺度適用中關家標準（CNS ) A4規格（21GX297公釐)~ 564503 A7 B7 五、發明説明（19) (請先閲讀背面之注意事項再填寫本頁) 依照本發明的熱處理方法，對於須執行熱處理的被處 理體進行處理之際，在事先所實施的目標發熱量取得操作 中，藉由配設於被處理體間的溫度修正用的溫度檢測器以 高精度檢測被處理體的溫度。所以將依溫度修正用的溫度 檢測器的控制目標溫度實質上一致於須熱處理被處理體的 目標加熱溫度地，隨著依溫度修正用的溫度檢測器的控制 目標溫度與依溫度控制用的溫度檢測器的控制對象溫度的 溫度差來修正加熱手段的基準發熱量。由此，可正確地進 行控制加熱手段的發熱量，因此，對於被處理體，可安定 地進行所期望的熱處理。 依照本發明的熱處理裝置，確實地實行上述方法之故 ，因而以高精度可檢測被處理體的溫度，結果，可正確地 進行控制加熱手段的發熱量，因此，對於被處理體，可安 定地進行所期望的熱處理。 (圖式之簡單說明） 第1圖是表示依本發明的熱處理裝置的一例子的構成 的槪略的說明用斷面圖。 經濟部智慧財產局員工消費合作社印製 第2圖是表示控制用溫度檢測器的構成一例的說明用 斷面圖。 第3圖是表示修正用溫度檢測器的構成一例的說明用 斷面圖。 第4圖是表示圖示於第3圖的修正用溫度檢測器的封 閉構造的一例的說明用斷面圖。 -22- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 564503 A7 B7 五、發明説明（20) 第5圖是表示溫度安定時的半導體晶圓，控制用溫度 檢測器及修正用溫度檢測器的溫度的經時性變化的圖表。 (請先閲讀背面之注意事項再填寫本頁) 主要元件對照表 11 處理容器 1 1 A 內管 1 1 B 外管 12 岐管 1 2 A 凸緣部分 13 凸緣推件 1 4 內管 15 氣體供給配管 1 6 排氣部 17 晶舟 2 0 蓋體 21 昇降機構 22 支持構件 23 旋轉驅動手段 經濟部智慧財產局員工消費合作社印製 2 4 保溫筒 30 筒狀加熱器 3 1 控制部 32 面狀加熱器 40 控制用溫度檢測器 4 1 保護管 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -23- 564503 A7 B7 五、發明説明（21 ) 4 2，5 4 4 4 4 5 熱電偶 絕緣構件 封閉材 5 0 修正用溫度 5 1 保護管 5 2 保護管本體部 53A〜53C 支管部 56 絕緣構件 5 7 封閉材 5 8 環狀溝 60 端部構造體 6 1 補助管 62 熱收縮管 63 套筒狀絕緣構件 I---：-----0WI — (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 24-564503 A7 B7 V. Description of the Invention (1) (Technical Field) The present invention relates to a heat treatment method and a heat treatment device. (Please read the precautions on the back before filling out this page) (Background technology) For example, in the process of semiconductor device manufacturing, for semiconductor wafers to be processed, various heat treatment devices are used for oxidation, diffusion, and film formation. For example, a batch-type vertical heat treatment apparatus capable of heat-treating a plurality of objects at one time is known. In this type of vertical heat treatment apparatus, a plurality of objects to be processed are held in a processing container by being held at predetermined intervals in a height direction. In addition, a cylindrical heater provided around the processing container is used to heat the object to be processed by applying heat according to a set amount of heat generated based on temperature data detected by a temperature detector provided in the processing container. . Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in order to achieve uniform film thickness and film formation with good characteristics when semiconductor wafers are heat-treated, in addition to the high temperature uniformity within the surface of each semiconductor wafer, Semiconductor wafers and the like, which are required to be placed at mutually different heights, have high temperature uniformity. In response to such a requirement, the processing container is divided into a plurality of heating areas in the up-down direction, and the object to be processed is heat-treated by applying heating in accordance with the amount of heat generated in each heating area. In the heat treatment apparatus described above, the temperature detector is made of, for example, quartz glass, and a straight tubular protective tube extending in the processing container is extended upward, and the protective tube is provided with each of the heating corresponding to the processing container. Field of thermocouples. As a result, the temperature corresponding to the position of each of the thermal zones in the processing container in the processing container is detected, and according to the detected temperature data, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied ~~ " 一 & quot 564503 A7 B7 V. Description of the invention (2) The cylindrical heater is adjusted. (Please read the precautions on the back before filling in this page.) Also, the above-mentioned vertical heat treatment device is used to detect the temperature away from the semiconductor wafer. Therefore, the temperature and temperature of I are detected by the temperature detector. An error inevitably occurs between the temperatures of the semiconductor wafer, and as a result, there is a problem that it is difficult to accurately control the temperature of the cylindrical heater. (Summary of the Invention) The present invention was made by the creator based on the above-mentioned matters. An object of the present invention is to provide a heat treatment method capable of detecting the temperature of an object to be processed with high accuracy, and thereby performing a desired heat treatment on the object to be processed stably, and a heat treatment device that reliably performs such a method. A heat treatment method belongs to a process of accommodating a to-be-processed object holder holding a plurality of to-be-processed objects at predetermined intervals in a height direction in a processing container, and a heating means provided in the processing container is operated so as to have a target amount of heat and is heated by The object to be treated is a heat treatment method for performing a predetermined heat treatment on the object, and is characterized by: Ministry of Economic Affairs The printed heating means of the Intellectual Property Bureau employee consumer cooperative is based on the target calorific value obtained through the following processes (1) to (3); (1) The reference object heat is set with the temperature of the object to be treated as the target heating temperature. A process in which the heating means is operated, and the temperature of the control target of the processing object is detected by a temperature detector for temperature control arranged in the processing container so as to extend in the height direction; The paper size of the temperature paper configured in the 'state' of the room applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 564503 A7 _____ B7 _ V. Description of the invention (3) The temperature detector for degree correction is used to detect and process The process of controlling the target temperature of the body; (3) comparing the temperature of the control target of the processing object detected by the temperature detector for temperature control with the control target temperature of the processing object detected by the temperature detector for temperature correction And, with the temperature difference between the control target temperature and the control target temperature, the reference calorific value is corrected to determine the process of the target calorific value. Here, Substantially identical "refers to a temperature difference of ± 0. State in the range of 5 to ± 1 _ 0 t. In the present invention, when the target heating value is to be obtained, the target temperature is controlled by the heating means operating at the reference heating value, and then in a substantially stable state, it is detected by a temperature detector for temperature control, which is a characteristic heat treatment method. . The present invention is a heat treatment method which is characterized in that the temperature of the object to be treated is detected between the objects to be treated at different height positions through a temperature controller when the target calorific value is to be obtained. The present invention is a method of heat treatment which is characterized by the temperature of the object to be processed at the center position of the object to be processed when the target calorific value is to be obtained. The present invention is a heat treatment method that is characterized in that the temperature of the object to be treated is measured at the center position and the edge portion of the heat-treated object through a temperature controller when the target calorific value is to be obtained. In the present invention, when the object to be processed is heat-treated, a temperature detector for temperature correction is performed in a state where it does not exist between the objects to be processed. The characteristic of this paper is that the paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back • Items, then fill in,: Write this page) Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 564503 A7 B7 4) Management method. The present invention is a heat treatment apparatus comprising a processing container, and a processing object holder which is stored in the processing container and is held at predetermined intervals in a height direction while a plurality of processing objects are horizontal, and The heating means provided outside the processing container and the processing means are provided inside the processing container so that the temperature of the object to be processed becomes the target heating temperature for the processing of the object to be detected. The temperature detector for temperature control and the temperature detector installed in the processing container are referenced to correct the heating value of the heating means, and the temperature detector for detecting the temperature correction for controlling the target temperature which is substantially consistent with the target heating temperature; The control target temperature detected by the temperature detector for temperature correction and the temperature of the control target detected by the temperature detector for temperature control are corrected by the control unit for the amount of heat generated by the heating means. The temperature detector for temperature correction according to the present invention includes a straight tube-shaped protective tube body portion extending in a height direction, and a state in which the protective tube body portion is spaced apart from each other in a height direction from the protective tube body portion, respectively, toward the protective tube body portion. A plurality of branch pipe sections extending in an orthogonal direction of the pipe axis direction; a thermocouple is arranged at each of the branch pipe sections; each of the branch pipe sections is arranged to be inserted between the objects to be treated at different height positions, and is characterized by Heat treatment device. The protective tube body of the temperature detector of the temperature correction device of the present invention, the paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau's Consumer Cooperatives 564503 A7 ___ B7 ______ V. Description of the Invention (5) It is a heat treatment device that is set in a state that can be rotated around the tube axis. The present invention is a thermal processing device featuring a temperature detector for temperature correction in which a ring-shaped groove is formed on the entire periphery of the base end portion of the protective body portion. The temperature detector for temperature correction according to the present invention is a heat treatment device characterized in that the protection tube main body portion and the branch tube portion are made in a reduced pressure state, and the reference side portion of the protection tube main body portion is hermetically sealed in the periphery. A temperature detector of the present invention belongs to a temperature detector for temperature correction, and is characterized by having a straight tube-shaped protective tube body portion extending in a height direction, and being separated from each other in the height direction from the protective tube body portion. In the state, a plurality of branch pipe sections extending in a direction orthogonal to the tube axis direction of the main body of the protection pipe are provided; thermocouples are arranged in each of the branch pipe sections; and each of the branch pipe sections is arranged to be inserted at different height positions from each other. Between the treated body. According to the present invention, when a target body to be heat-treated is processed, when a target calorific value to be performed in advance is obtained, a temperature detector for temperature correction arranged between the target bodies is used to detect the target body with high accuracy. Temperature of the treatment body. After that, the target temperature controlled by the temperature sensor for temperature correction is substantially the same as the target heating temperature of the object to be heat-treated, and the target temperature controlled by the temperature sensor for temperature correction and the The temperature difference between the temperature of the control object of the temperature detector This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 29 * 7 mm) I ^ Binding ^. (Please read the precautions on the back before filling this page) 564503 A7 B7 V. Description of the invention (6) Correct the reference heating value of the heating means. This makes it possible to accurately control the heat amount of the heating means. (Please read the precautions on the back before filling in this page.) The temperature detector for temperature correction has a protective tube body and a branch tube part, and the thermocouple is installed in the branch tube part. In the case of metal contamination, particles, etc., the temperature of the object to be processed can be detected (the best form for implementing the invention). In the present invention, referring to the drawings, the CVD method is used to perform the process on the object. A film-type vertical heat treatment apparatus will be described as an example. This vertical heat treatment device is arranged to extend in a height direction (upward and downward directions in FIG. 1), and includes a straight tubular inner tube 1 1 A whose upper end is opened, and is arranged concentrically around the predetermined interval, On the other hand, a processing container 1 1 having a double tube structure formed by an outer tube 1 1 B closed at the upper end; a space below the processing container 11 is a loading area L. This loading area L is an area for transferring a semiconductor wafer of a processing object or the like to a wafer boat 17 as a processing object holder described below. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The inner tube 11A and the outer tube 11B are made of high-purity quartz glass, which is excellent in heat resistance and corrosion resistance, for example. At the lower end portion of the outer tube 1 1 B of the processing container 11 is provided a short cylindrical manifold 12 having a flange portion 12 A at the upper end. The flange portion 1 2 A is provided at the lower end flange portion 1 1 1 of the outer end of the outer tube 1 1 B through a sealing means (not shown) such as an O-ring, and the paper size is applied by a flange pusher. Chinese National Standard (CNS) A4 specification (210X297 mm) 564503 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (7) 1 3 The joint is applied so that the outer tube of the container 1 1 1 B It becomes a fixed state. The inner tube 1 1A of the processing container 11 extends downwards from the lower end surface of the outer tube 1 1 B and is inserted into the manifold 12 through a ring provided on the inner surface of the manifold 12. The inner tube support portion 14 is supported. In the longitudinal section of the processing valley 1 1 of the vertical heat treatment device, a gas supply pipe 15 for introducing a processing gas or an inert gas into the processing container 11 is provided on one side wall of the manifold 12. Airtightly penetrates the side wall of the manifold 12 and is provided in a state where it extends upward in the inner tube 1 1 A. A gas supply source (not shown) is connected to the gas supply pipe 15 and an exhaust portion 16 inside the exhaust treatment container 11 is provided on the other side wall of the manifold 12. The unit 16 is connected to an exhaust mechanism (not shown) having, for example, a vacuum pump and a pressure control mechanism, whereby the inside of the processing container 11 is controlled to a predetermined pressure. Below the processing container 11 is provided an elevating mechanism 21 that drives in a vertical direction to carry in a wafer boat 17 for holding the object to be processed, and carries out the lifting mechanism 21 inside the processing container 11. The lifting mechanism 21 is a disc-shaped disk body 20 having a lower end opening 1 1 C for opening and closing the processing container 1 1. The wafer boat 17 is formed of quartz glass of pure purity; in the wafer boat 17, a plurality of semiconductor wafers such as 100 to 150 are in a horizontal state, such as 5. 2 to 2 0. The predetermined interval (spacing) of 8 mm is placed on top and bottom in multiple sections. The cover body 20 of the lifting mechanism 21 is in a state of penetrating the cover body 20 (please read the note 4 on the back first, and then fill and install — write this page). ) A4 size (210X297 mm) -10- 564503 A7 _ B7 V. Description of the invention (8) (Please read the precautions on the back before filling in this page) There is a post extending parallel to the processing container 1 1 1 upward.状 Supporting member 2 2. On this support member 22, a disc-shaped boat support member 2 2 A placed on the wafer boat 17 is integrally provided on the upper portion thereof; the support member 22 is a rotary drive connected to the lower portion of the cover body 20 Means 2 3. In addition, a heat insulating tube 24 made of quartz is provided on the upper part of the cover body 20 in a state where the supporting member 22 is inserted. A cylindrical heater 30 for heating the semiconductor wafer accommodated in the processing container 11 to a predetermined processing temperature is provided on the outside of the processing container 11 so as to surround the periphery of the processing container 11. . The cylindrical heater 30 is a cylindrical heat insulating material (not shown) having a linear resistance heating element arranged in a spiral or meandering manner on the inner surface. The resistance heating element is connected to control that controls the amount of power to be supplied based on the temperature data of the semiconductor wafer detected by the temperature detector 40 described below, so that the semiconductor wafer becomes a preset temperature state. Department 3 1. The inside of the processing container 11 is divided into a plurality of heating zones Z 1 to Z 3 in the height direction as shown in the example; the cylindrical heater 30 is temperature-controlled independently for each of the heating zones Z 1 to Z 3 , That is, to perform belt control. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is printed above the processing container 11 so as to face the wafer boat 17 in the processing container 11 and is arranged in parallel with the upper end surface of the cylindrical heater 30 2 of the planar heaters. The planar heater 32 effectively prevents heat radiation from above the processing container 11, and heat-processes the semiconductor wafer with high uniformity in the surface. The surface heater 3 2 is a linear electric paper with wiring on a plate-like substrate. The paper is sized according to the Chinese National Standard (CNS) A4 (210X297 mm) -11-564503 A 7 B7 5. Description of the invention (9 ) Heating element; the resistance heating element is connected to the control unit 31. A temperature detector (hereinafter simply referred to as a control temperature detector) for temperature control that detects the temperature of a control target of a semiconductor wafer is disposed in the processing container 11 of the vertical heat treatment apparatus. The inspection by the temperature detector 40 is referred to control the heat generation of the cylindrical heater 30 and the planar heater 32 so that the semiconductor wafer becomes the target heating temperature. Specifically, the control temperature detector 40 penetrates the lower wall of the manifold 12 air-tightly, and is disposed to extend parallel to the inner tube 1 1 A in a height direction and is formed in the processing container 11. The ring-shaped space between the wafer boat 17 and the inner tube 1 1 A at a predetermined position. The front end portion of the control temperature detector 40 extending from the upper end surface of the inner tube 11A is a semiconductor wafer that is held in the wafer boat 17 and extends in parallel toward the center of the processing container 11. As shown in FIG. 2, the control temperature detector 40 is made of, for example, transparent quartz glass, and the front end side portion extends in a horizontal direction (right direction in FIG. 2) and is bent into an entire L-shaped protective tube. 41, and the protective tube 41 is disposed at a position corresponding to the heating area of the planar heater 32 (for example, a position corresponding to the center position of the planar heater 32) and corresponding to A plurality of thermocouples 4 (in this embodiment, a total of four) in the heating zone Z 1 to Z 3 of the cylindrical heater 30 are formed. The protective tube 41 is in a state where the front end portion is closed. At the same time, the base end side portion is closed by a sealing material 45 such as an adhesive, and the metal element wire of the thermocouple 42 is pulled out to the outside through the sealing portion. Thermocouple paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) Please read the back & note t Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs-12- 564503 A7 B7 V. Invention Explanation (10) The metal element wire of 2 2 is connected to the input terminal of the control unit 31 via the compensation wire. (Please read the precautions on the back before filling in this page.) The base end of the protection tube 41 can be hermetically sealed. In the protection tube 41, in order to prevent the oxidation of the thermocouple 42, for example, Inert gas such as nitrogen gas may be used. Each of the metal element wires of the thermocouple 42 is provided with an insulating member 4 4 made of, for example, alumina ceramics in a state where the metal element wires are inserted. The insulating member 4 4 has a length of about 3 mm, for example. A plurality of sleeve-shaped beads 4 4 A are arranged so as to be connected to each other in the longitudinal direction. In Fig. 2, each of the insulating members is shown as an insulating member for convenience. In the processing container 11 of the vertical heat treatment apparatus, a temperature detector (hereinafter referred to as a correction temperature detector) for temperature correction of a control target temperature of a semiconductor wafer that substantially coincides with a detection target heating temperature is provided. 5 0. The control target temperature of the semiconductor wafer is referred to when the reference volume of the cylindrical heater 30 and the planar heater 32 is corrected. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as shown in FIG. 3, the correction temperature detector 50 has a protective tube body portion 52, and extends horizontally at the front end portion of the protective tube body portion 52. The first branch pipe portion 53A; the protective pipe main body portion 52 is formed in an approximately L shape together with the branch pipe portion 5 3 A. From the protective tube body portion 52 and the first branch tube portion 538, the plural numbers extend in a horizontal direction orthogonal to the tube axis direction of each protective tube body 52 in a state where they are spaced apart from each other in the height direction (example of the figure) For two) branch sections 5 3 B, 5 3 C. A thermocouple 5 9 is arranged at the front end of each of the branches 5 3 A, 5 3 B, and 5 3 C. This paper size applies the Chinese National Standard (CNS) A4 specification (210X29? Mm) -13- 564503 A7 B7 V. Description of the invention (11) In addition, the protective tube body portion 52 and the branch tube portion 53A, 5 3 B, 5 3 C constitutes a protective tube. (Please read the precautions on the back before filling in this page) In the state where the metal element wires of the thermocouple 5 4 are inserted, an insulating member 5 6 made of, for example, alumina ceramic is provided; The insulating member 56 is a sleeve-shaped plural bead 5 6 A having a length of, for example, about 3 mm, and these bead 5 6 A are arranged to be connected to each other in the longitudinal direction. Each of the branch pipe portions 53A, 53B, and 53C has its front end portion closed, and at the same time, the base end portion of the protection tube body portion 52 is closed, and the metal element wire of the thermocouple 54 is pulled out through the closing portion. . The metal wire of the thermocouple 54 is connected to the input terminal of the control unit 31 via a compensation wire. The proximal end portion of the protective tube body portion 52 may be hermetically sealed. In the protective tube 51, a nitrogen gas (N 2 gas) or the like may be filled in order to prevent oxidation of the thermocouple 54. Inert gases are also possible. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in FIG. 4, at the base end side of the protective tube 51, a sealing material 5 7 such as cement is filled in the protective tube 51 to form Airtight closed structure. An end structure 60 extending continuously from the end of the protective tube 51 and extending outward is provided in a state where the insulating member 56 is inserted. The end structure 60 is an auxiliary tube 61 made of quartz glass, which is provided with a heat-shrinkable tube 62 on the inner surface, and a sleeve made of Teflon, which is inserted into the auxiliary tube 61.状 update 件 6 3. In addition, at the base end side of the protective tube body portion 5 2 of the protective tube 51 of the protective tube 51, specifically, the inner paper portion of the processing container 1 1 is in accordance with the Chinese National Standard (CNS) A4 standard. (210X297 mm) 564503 A 7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (12) The boundary part between the outer part of the processing container 1 1 and the annular groove 5 8 is formed on its entire circumference comprehensive. The lower wall of the manifold 12 is fitted into the annular groove 5 8, and the correction temperature detector 50 is arranged in the processing container 11. When the semiconductor wafer is subjected to a predetermined heat treatment, when the target heating value of the cylindrical heater 32 is obtained in advance (when the target heating value acquisition operation is performed), a correction temperature detector 50 is used. In addition, the correction temperature detector 50 is rotatably centered on the tube axis of the protective tube body portion 52 extending upward, and when the heat generation operation is to be performed, the protective tube body portion 52 is tube-shaped. The shaft rotates as a center. As a result, each of the branch shafts 5 3 A, 5 3 B is inserted between the semiconductor wafers held at the corresponding height positions by the wafer boat 17. The branch pipe sections 53A, 5 3 B, and 53C are preferably formed by inserting semiconductor wafers at different height positions from each other, and branch pipe sections 5 3 A, 5 3 B, and 5 3 C provided with thermocouples 5 4 It is preferable that the front end portion is formed to a position corresponding to the center position of the semiconductor wafer. Further, a thermocouple which can measure the center position of the wafer and the edge portion of the wafer at the same time may be provided. In the example shown in the figure, the first branch pipe portion 53, which is continuous to the upper end of the protective tube 51 and extends in the horizontal direction (left direction in FIG. 3), is arranged above the uppermost one of the semiconductor wafers to be processed. Space; the third branch part 5 3 C located at the lowermost position of the correction temperature detector 50 is arranged in the upper space of the lowermost part of the semiconductor wafer to be processed; (Fill in this page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 564503 A7 B7 V. Description of the invention (13) (Please read the precautions on the back before filling in this page) 1 Branch Department 5 3 A The second branch pipe portion 5 3 B at a level between the third branch pipe portion 5 3 C and the third branch pipe portion 5 3 C is arranged in the upper space of the central portion of the semiconductor wafer to be processed. The heat treatment of the semiconductor wafer performed in the vertical heat treatment apparatus configured as described above will be described below. First, in the loading area L, a wafer boat 17 in a state where a semiconductor wafer is transferred and a semiconductor wafer is held is placed on a wafer support 2 2 A. At this time, the cover body 20 is located at the lowermost position. Thereafter, the lid body 20 is driven upward via the lifting mechanism 21, and the wafer boat 17 is carried into the processing container 11 through the lower opening 11C. Then, the lower opening 1 1 C of the processing container 11 is closed by airtightness via the cover 20, and the exhaust means is activated to reduce the pressure in the processing container 1 1 to about 6 X 1 0-4 P a given pressure of a. At this time, for example, an analog semiconductor wafer is placed on the uppermost part and the lowermost part of the wafer boat 17. Then, a target heating value acquisition operation for setting target heating values of the cylindrical heater 30 and the planar heater 32 is performed. That is, the correction temperature detector 50 is rotated around the tube axis of the protective tube main body portion 52 so that each of the branch tube portions 53A, 5 3 B, and 53C is inserted into the employee of the Intellectual Property Bureau of the Ministry of Economic Affairs. Consumer cooperatives print semiconductor wafers at different heights. After that, the control target temperature detector 40 detects the temperature of the control target, and the cylindrical heater 30 and the planar heater 32 operate at a reference calorific value set at a semiconductor wafer to a predetermined target heating temperature. Then, after the temperature of the control object detected by the control temperature detector 40 has become substantially stable, the paper will continue to be inspected in accordance with the control temperature. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -16 -564503 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (14) Temperature detection of the detector 40. Here, the "substantially stable state" means that the variation width of the temperature of the control target obtained by the temperature detector 40 for control is, for example, ± 0. 5 to 1. A state within a range of 0 ° C; for example, when the cylindrical heater and the planar heater 32 are operated for more than two hours, a sufficiently stable state is generally achieved. Thereafter, the control target temperatures detected by the thermocouples 4 2 of the control temperature detector 40 and the control target temperatures detected by the thermocouples 5 4 of the correction temperature detector 50 are input. To the control section 3 1. When the control target temperature detected by the correction temperature detector 50 is substantially the same as the target heating temperature of the semiconductor wafer to be processed, the control unit 31 compares the temperature data of each corresponding height level. On the other hand, when the control target temperature detected by the correction temperature detector 50 is not substantially the same as the target heating temperature of the semiconductor wafer to be processed, the control unit 31 sets the cylindrical heater 30 and the surface shape. The above process is repeated with the reference calorific value of the heater 32. For example, in the control unit 31, the semiconductor wafer placed at a position corresponding to the heating zone Z1 is controlled by the control target temperature according to the correction temperature detector 50 and the control temperature detector 40. The temperature difference of the target temperature determines the target heat generation amount for the cylindrical heater 30 that is placed on the semiconductor wafer at a position corresponding to the heating zone Z 1 of the cylindrical heater 30. The above operation is also performed in other heating areas Z 2 and Z 3. After that, the temperature sensor 50 for correction was turned to make the paper size of the branch pipe. The national paper standard of China (CNS) A4 (210X297 mm) was applied. (Please read the precautions on the back before filling this page.) 564503 A7 B7 5 Explanation of the invention (15) 5 3 A, 5 3 B, and 5 3 C are not present between semiconductor wafers. (Please read the precautions on the back before filling this page.) Then, when the wafer boat 17 is not rotated by the rotation driving means 2 3, an appropriate amount of processing gas is guided from the gas supply pipe 15 to the processing container 1 1 And a film forming process is performed on the semiconductor wafer. According to the above-mentioned vertical heat treatment apparatus, the temperature of the semiconductor wafer is detected with high accuracy by the correction temperature detector 50 during the target heating value acquisition operation performed in advance when the semiconductor wafer is thermally processed. To this end, the control target temperature according to the correction temperature detector 50 is substantially the same as the control target temperature of the semiconductor wafer to be heat-treated, and as the control target temperature according to the correction temperature detector 50 and the control temperature are adjusted. The temperature difference of the control target temperature of the detector 40 can correct the reference calorific value. As a result, the amount of heat generated by the cylindrical heater 30 and the planar heater 32 can be accurately controlled. Therefore, the desired heat treatment can be performed on the semiconductor wafer in a stable manner. Since the target heating value acquisition operation is performed in a stable state according to the detection temperature of the control temperature detector 40, the control target temperature according to the correction temperature detector 50 and the control temperature can be reliably obtained. The temperature difference between the temperature of the control target of the detector 40 is correct, so that the heating values of the cylindrical heater 30 and the cylindrical heater 32 can be accurately controlled. Further, each branch of the temperature detector 50 is corrected. Because 5 3 A, 5 3 B, and 5 3 C are arranged between semiconductor wafers at different height positions, temperature control can be performed independently at each height position. Therefore, when the semiconductor wafer is to be heat treated, the Chinese National Standard (CNS) A4 specification (210X 297 mm) applies regardless of the paper size of the semiconductor wafer. 564503 A7 B7 (16) The arranged height positions can be heat-treated at a substantially uniform and desired temperature state for all semiconductor wafers. In addition, since the front end portions of the branch portions 53A, 5 3 B, and 5 3 C provided with the thermocouples 54, 54, 54 reach a position corresponding to the center position of the semiconductor wafer, only semiconductors can be detected substantially. The emitted light from the wafer can be used to detect the temperature of the semiconductor wafer with high accuracy. In addition, the thermocouples 5 4, 5, 4, and 54 of the correction temperature detector 50 are disposed in the branch pipe sections 53A, 5 3 B, and 53C. In other words, the metal wires of the thermocouple 5 4 are not exposed. Because of the environment inside the processing container 11, the occurrence of metal contamination such as particles or semiconductor wafers can be reliably prevented. Therefore, compared with the case where the thermocouple is directly disposed on the semiconductor wafer and the temperature of the semiconductor wafer is detected, the operation of replacing the quartz mold and the cleaning process required after the operation for setting the target heating value are unnecessary. For semiconductor wafers, the desired heat treatment can be advantageously performed. Further, in the proximal end portion of the protective tube 51, the annular groove 58 is formed over the entire circumference thereof. Therefore, the annular groove 58 can be fitted into the manifold 12 and can function as a stopper. In this way, even when the inside of the processing container 11 is reduced in pressure, the correction temperature detector 50 can be reliably prevented from being pulled into the processing container 11. As mentioned above. The protective tube 51 of the temperature detector 50 is used as an inert gas atmosphere. However, when the protective tube 51 is made in a decompressed state, the base end portion of the protective tube 51 can be hermetically closed. In this case, when the decompression state in the processing container 11 is made, even if it is borrowed (please read the note # 1 on the back side before filling and filling-: write this page) to order the paper size is applicable. National Standard (CNS) A4 (210X297 mm) 564503 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (17) The situation where the protective tube 51 is damaged for any reason can also be reliably prevented The fragments are scattered into the processing container 11. The same structure can be applied to the control temperature detector 40. (Embodiment) An embodiment of the vertical heat treatment apparatus having the structure shown in Fig. 1 will be described below. 2 5 semiconductor wafers with a wafer diameter of 2,000 m to 1 5. The 6-m-m pitch is placed in multiple steps in the up-and-down direction. Simultaneous semiconductor wafers are placed on the top and bottom wafer boats 17 in a processing container 11. Thereafter, the cylindrical heater 30 and the planar heater 32 are operated with a predetermined reference calorific value so that all semiconductor wafers become 800 ° C (target heating temperature). In this way, two hours after the start of heating, the temperature detection of the control temperature detector 40 and the correction temperature detector 50 was performed, and the control target temperature detected by the control temperature detector 40 was 80 °. C, and the control target temperature detected by the correction temperature detector 50 is 803 ° C. After that, the target temperature is adjusted to 7 9 8 t, and the target heating value is corrected by adjusting the reference heating value in accordance with the temperature difference between the control target temperature and the control target temperature by 3 ° C. The tubular heating is performed with the set target heating value.器 30 and the surface heater 32. At this time, the control target temperature detected by the correction temperature detector 50 is 80 °. (: For all semiconductor crystal grips, the desired heat treatment can be performed. The paper size of the semiconducting paper that indicates the temperature stability is applicable to the Chinese National Standard (CNS) A4 specification (210 X29? Mm) I ----:- -:-^ Pack -------- Order ------- (Please read the precautions on the back before filling this page) 20 564503 A7 B7 ___ V. Description of the invention (18) Bulk wafer The graph of the change over time in the temperature of the control temperature detector 40 and the correction temperature detector 50 is shown in Fig. 5. (Please read the precautions on the back before filling out this page.) Although the embodiment is not limited to those described above, the present invention can be modified in various ways. For example, the number of branch sections of the temperature detector for correction, the position where the branch sections are inserted, and other structures are not particularly limited. For example, the number and size (outer diameter) of the object to be processed in a single process can be appropriately changed. In the above embodiment, the branch pipe portion of the correction temperature detector is made to correspond to each of the cylindrical heaters. The state of the heating area However, it does not need to be arranged at a position corresponding to the heating area by the cylindrical heater. The number and position of the thermocouples arranged at the front end portion of the protective tube body portion and each of the branch portions are not particularly limited. For example, a plurality of thermocouples may be arranged in a branch pipe part in a state where they are separated from each other in a horizontal direction in the branch pipe part. Specifically, a thermocouple front end is respectively arranged at a wafer center position and a wafer edge part. Further, a target heat generation amount The acquisition operation is not the object to be processed, but it can also be performed on a simulated object. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this embodiment, the control temperature detector 4 is used. 0 is set in the inner tube 1 1 A, but it is also possible to detect the heater temperature through the heater 3 0, 3 2 俾. The present invention is not limited to the film forming process, for example, it can be applied to oxidation treatment, diffusion treatment, Heat treatment equipment such as annealing treatment. According to the heat treatment method of the present invention, the paper size is applicable to Zhongguanjia Standard (CNS) A4 (21GX297 mm) ~ 564503 A7 B7 V. Description of the invention (19) (Please read the notes on the back before filling this page) According to the heat treatment method of the present invention, when the object to be heat treated is processed, the target calorific value obtained in advance is obtained. During operation, the temperature of the object to be processed is detected with high accuracy by a temperature detector for temperature correction provided between the objects. Therefore, the control target temperature of the temperature detector according to the temperature correction is substantially the same as that required for heat treatment. In accordance with the target heating temperature of the object, the reference heating value of the heating means is corrected in accordance with the temperature difference between the control target temperature of the temperature detector for temperature correction and the control target temperature of the temperature detector for temperature control. Since the amount of heat generated by the heating means can be accurately controlled, the desired heat treatment can be performed stably on the object to be processed. According to the heat treatment apparatus of the present invention, the above method is carried out reliably, so that the temperature of the object to be processed can be detected with high accuracy, and as a result, the heating value of the heating means can be accurately controlled. The desired heat treatment is performed. (Brief description of the drawings) Fig. 1 is a schematic cross-sectional view showing the structure of an example of a heat treatment apparatus according to the present invention. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 2 is a sectional view showing an example of the structure of a temperature detector for control. Fig. 3 is an explanatory sectional view showing an example of the configuration of a correction temperature detector. Fig. 4 is an explanatory sectional view showing an example of a sealing structure of the correction temperature detector shown in Fig. 3. -22- This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) 564503 A7 B7 V. Description of the invention (20) Figure 5 shows the semiconductor wafer showing the temperature stability, temperature detector and correction for control Graph of temperature change over time with temperature detector. (Please read the precautions on the back before filling out this page) Main component comparison table 11 Processing container 1 1 A Inner tube 1 1 B Outer tube 12 Manifold 1 2 A Flange part 13 Flange pusher 1 4 Inner tube 15 Gas Supply piping 1 6 Exhaust part 17 Crystal boat 2 0 Cover body 21 Lifting mechanism 22 Support member 23 Rotary driving means Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 4 Insulation tube 30 Tube heater 3 1 Control section 32 Surface Heater 40 Temperature detector for control 4 1 Protective tube The paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) -23- 564503 A7 B7 V. Description of the invention (21) 4 2, 5 4 4 4 4 5 Thermocouple insulating member sealing material 5 0 Correction temperature 5 1 Protective tube 5 2 Protective tube body portion 53A ~ 53C Branch tube portion 56 Insulating member 5 7 Sealing material 5 8 Ring groove 60 End structure 6 1 Auxiliary tube 62 Heat Shrink tube 63 Sleeve-like insulating member I ------------ 0WI — (Please read the precautions on the back before filling this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives This paper is applicable to China Standard (CNS) A4 specification (210X29 7 mm) 24-