TWI802098B - Carrying device for semiconductor heat treatment equipment and semiconductor heat treatment equipment - Google Patents
Carrying device for semiconductor heat treatment equipment and semiconductor heat treatment equipment Download PDFInfo
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- TWI802098B TWI802098B TW110143800A TW110143800A TWI802098B TW I802098 B TWI802098 B TW I802098B TW 110143800 A TW110143800 A TW 110143800A TW 110143800 A TW110143800 A TW 110143800A TW I802098 B TWI802098 B TW I802098B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
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Abstract
本發明提供一種半導體熱處理設備的承載裝置及半導體熱處理設備,該承載裝置包括承載主體,該承載主體包括複數用於承載晶圓的承載位,且複數支撐件承載位沿支撐件承載主體的軸向間隔排佈,還包括測溫裝置,測溫裝置包括支撐件和複數測溫組件,其中,支撐件與承載主體連接,且位於承載主體的承載位的邊緣外側;複數測溫組件均設置在支撐件上,且沿承載主體的軸向間隔排佈,並且每個測溫組件均具有延伸至承載位的邊緣內側的測溫端,用於對與該測溫端對應的分區的溫度進行檢測。本發明提供的半導體熱處理設備的承載裝置及半導體熱處理設備,能夠提高對晶圓測溫的準確性。The present invention provides a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment. The carrier device includes a carrier body. The carrier body includes a plurality of carrier positions for carrying wafers, and the plurality of support member carrier positions are along the axial direction of the support member carrier body. Arranged at intervals, it also includes a temperature measurement device, the temperature measurement device includes a support and a plurality of temperature measurement components, wherein the support is connected to the bearing body and is located outside the edge of the bearing position of the bearing body; the plurality of temperature measurement components are all set on the support and arranged at intervals along the axial direction of the bearing body, and each temperature measuring component has a temperature measuring end extending to the inner side of the edge of the bearing position for detecting the temperature of the subregion corresponding to the temperature measuring end. The carrying device of the semiconductor heat treatment equipment and the semiconductor heat treatment equipment provided by the present invention can improve the accuracy of measuring the temperature of the wafer.
Description
本發明涉及半導體設備技術領域,具體地,涉及一種半導體熱處理設備的承載裝置及半導體熱處理設備。The present invention relates to the technical field of semiconductor equipment, in particular to a bearing device for semiconductor heat treatment equipment and the semiconductor heat treatment equipment.
在半導體熱處理設備中,製程腔室內的溫度均勻性,對於間隔放置在製程腔室內的複數晶圓的良品率具有重要影響,因此,如何能夠準確檢測各晶圓的溫度,對於半導體製程極為重要。In semiconductor heat treatment equipment, the temperature uniformity in the process chamber has an important impact on the yield of multiple wafers placed in the process chamber at intervals. Therefore, how to accurately detect the temperature of each wafer is extremely important for the semiconductor process.
如圖1所示,半導體立式爐設備包括裝卸腔室11和位於該裝卸腔室11上方的製程腔室12,其中,製程腔室12內設置有石英管121;用於承載複數晶圓的晶舟13是可升降的,以能夠在裝卸晶圓時下降至裝卸腔室11中,在進行製程時承載晶圓上升至石英管121中;晶舟13能夠承載複數晶圓,且複數晶圓在垂直方向上間隔放置於晶舟13中。石英管121內安裝有測溫裝置14,石英管121內部在垂直方向上劃分為複數測溫區域,測溫裝置14上對應各個測溫區域設置有測溫熱偶,各測溫熱偶用於一一對應地對各測溫區域進行測溫。為了避免測溫裝置14對晶舟13的升降產生干涉,測溫裝置14只能安裝在石英管121內位於晶舟13外側的邊緣位置,這使得測溫裝置14距離晶圓較遠,導致測溫裝置14測得的溫度與晶圓的實際溫度之間會有較大誤差,為此,在半導體立式爐設備正式使用之前,還需要將能夠測溫且形狀與晶圓類似的晶圓熱電偶(TC Wafer)放置於晶舟13中,並模擬半導體製程,並將晶圓熱電偶測得的溫度視為晶圓實際溫度,與測溫裝置14測得的溫度進行比較,以獲得測溫裝置14測得的溫度與晶圓的實際溫度之間的誤差,從而在半導體立式爐設備正式使用之後,藉由獲得的誤差對測溫裝置14測得的溫度進行補償,以獲得晶圓的實際溫度。As shown in Figure 1, the semiconductor vertical furnace equipment includes a loading and
但是,上述測溫方式需要測溫裝置14與晶圓熱電偶配合使用,導致成本較高,並且獲得的誤差樣本較小,準確性較低,僅具有參考意義,無法準確地對測溫裝置14測得的溫度進行補償,導致晶圓的良品率較低,另外,石英管121在長時間使用後,其內部環境會發生變化,例如經過多次沉積製程後,石英管121的內壁上會沉積製程副產物,而石英管121內環境的變化又會對誤差產生影響,此時就需要對半導體立式爐設備停產校正,重新測算誤差,導致半導體立式爐設備使用率低。However, the above-mentioned temperature measurement method requires the
本發明旨在至少解決先前技術中存在的技術問題之一,提出了一種半導體熱處理設備的承載裝置及半導體熱處理設備,其能夠提高對晶圓測溫的準確性,從而無需與其它測溫元件配合使用,以提高晶圓的良品率,降低成本,提高半導體熱處理設備的使用率。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment, which can improve the accuracy of wafer temperature measurement, thereby eliminating the need to cooperate with other temperature measurement elements Use to improve the yield rate of wafers, reduce costs, and increase the utilization rate of semiconductor heat treatment equipment.
為實現本發明的目的而提供一種半導體熱處理設備的承載裝置,包括承載主體,該承載主體包括複數用於承載晶圓的承載位,且複數該承載位沿該承載主體的軸向間隔排佈,還包括測溫裝置,該測溫裝置包括支撐件和複數測溫組件,其中,該支撐件與該承載主體連接,且位於該承載主體的該承載位的邊緣外側; 複數該測溫組件均設置在該支撐件上,且沿該承載主體的軸向間隔排佈,並且每個該測溫組件均具有延伸至該承載位的邊緣內側的測溫端,用於對與該測溫端對應的分區的溫度進行檢測。 In order to achieve the purpose of the present invention, a carrier device for semiconductor heat treatment equipment is provided, which includes a carrier body, the carrier body includes a plurality of carrier positions for carrying wafers, and the plurality of carrier positions are arranged at intervals along the axial direction of the carrier body, It also includes a temperature measurement device, the temperature measurement device includes a support and a plurality of temperature measurement components, wherein the support is connected to the bearing body and is located outside the edge of the bearing position of the bearing body; A plurality of the temperature measuring components are arranged on the support and arranged at intervals along the axial direction of the bearing body, and each of the temperature measuring components has a temperature measuring end extending to the inner side of the edge of the bearing position for measuring The temperature of the partition corresponding to the temperature measuring terminal is detected.
可選的,該測溫端與該承載位的中心在該承載主體的軸向上相對設置。Optionally, the temperature measuring end is arranged opposite to the center of the bearing position in the axial direction of the bearing body.
可選的,該測溫組件包括延伸部件和測溫部件,其中,該延伸部件的一端與該支撐件連接,另一端作為該測溫端延伸至該承載位的邊緣內側; 該測溫部件設置在該延伸部件內,且位於該測溫端處,並且該測溫部件的接線依次藉由該延伸部件和該支撐件引出。 Optionally, the temperature measurement component includes an extension part and a temperature measurement part, wherein one end of the extension part is connected to the support, and the other end is used as the temperature measurement end and extends to the inside of the edge of the bearing position; The temperature measuring part is arranged in the extension part and is located at the temperature measuring end, and the wiring of the temperature measuring part is led out through the extension part and the supporting part in sequence.
可選的,該測溫部件包括熱電偶,該熱電偶包括第一電極、第二電極、第一連接件、第二連接件、第一導電件、第二導電件和絕緣部件,其中,該第一電極和該第二電極間隔設置在該延伸部件內,且位於該測溫端處;該第一連接件和該第二連接件間隔設置在該延伸部件內;該第一導電件和該第二導電件間隔設置在該支撐件內;該第一電極藉由該第一連接件與該第一導電件電連接,該第二電極藉由該第二連接件與該第二導電件電連接; 該絕緣部件設置在該延伸部件和該支撐件內,用於對該第一導電件和該第二導電件之間、該第一連接件和該第二連接件之間進行電絕緣。 Optionally, the temperature measuring component includes a thermocouple, and the thermocouple includes a first electrode, a second electrode, a first connecting member, a second connecting member, a first conductive member, a second conductive member and an insulating member, wherein the The first electrode and the second electrode are arranged at intervals in the extension part and are located at the temperature measuring end; the first connecting part and the second connecting part are arranged at intervals in the extension part; the first conductive part and the The second conductive member is arranged at intervals in the support member; the first electrode is electrically connected to the first conductive member through the first connecting member, and the second electrode is electrically connected to the second conductive member through the second connecting member. connect; The insulating part is arranged in the extension part and the supporting part, and is used for electrically insulating between the first conductive part and the second conductive part, and between the first connecting part and the second connecting part.
可選的,該絕緣部件包括絕緣套管,該絕緣套管內設置有相互電絕緣的第一通道和第二通道,其中,該第一通道用於供該第一導電件和該第一連接件穿過,該第二通道用於供該第二導電件和該第二連接件穿過。Optionally, the insulating component includes an insulating sleeve, and a first channel and a second channel that are electrically insulated from each other are arranged in the insulating sleeve, wherein the first channel is used for connecting the first conductive member to the first The second channel is used for the second conductive member and the second connecting member to pass through.
可選的,該支撐件上設置有限位部件,該限位部件與該承載主體相配合,用於限制該支撐件相對於該承載主體轉動。Optionally, a limiting component is provided on the support, and the limiting component cooperates with the bearing body to limit the rotation of the support relative to the bearing body.
可選的,該限位部件設置在該支撐件上,該承載主體上開設有限位槽,該限位部件設置在該限位槽中,且該限位部件的外周面與該限位槽的內周面相配合,以限制該限位部件相對於該限位槽轉動。Optionally, the limiting component is arranged on the support member, a limiting groove is opened on the carrying body, the limiting component is set in the limiting groove, and the outer peripheral surface of the limiting component is in contact with the limiting groove. The inner peripheral surface cooperates to limit the rotation of the limiting component relative to the limiting groove.
可選的,該支撐件上設置有固定結構,該承載主體上設置有固定部,該承載裝置還包括固定組件,用於可拆卸地連接該固定結構與該固定部。Optionally, a fixing structure is provided on the support, a fixing part is provided on the carrying body, and the carrying device further includes a fixing assembly for detachably connecting the fixing structure and the fixing part.
可選的,該固定結構包括設置在該支撐件上的凸臺,該固定部中開設有供該凸臺穿過的固定孔,該固定部的外周壁上設置有外螺紋; 該固定組件包括固定件、第一彈性件、第二彈性件、壓緊件和彈性密封件,其中, 該固定件中開設有固定槽,該固定槽的內周壁上設置有與該外螺紋配合的內螺紋,該第一彈性件、該第二彈性件、該壓緊件和該彈性密封件由下而上依次疊置在該固定槽中,且均套設在該支撐件上,該彈性密封件位於該壓緊件與該固定部伸入至該固定槽中的一端之間。 Optionally, the fixing structure includes a boss arranged on the support member, a fixing hole is opened in the fixing part for the boss to pass through, and an external thread is arranged on the outer peripheral wall of the fixing part; The fixing assembly includes a fixing part, a first elastic part, a second elastic part, a pressing part and an elastic sealing part, wherein, A fixing groove is opened in the fixing part, and an internal thread matched with the external thread is arranged on the inner peripheral wall of the fixing groove. The first elastic part, the second elastic part, the pressing part and the elastic sealing part are formed by The top and bottom are sequentially stacked in the fixing groove, and are sleeved on the supporting member. The elastic sealing member is located between the pressing member and an end of the fixing part protruding into the fixing groove.
本發明還提供一種半導體熱處理設備,包括裝載腔室、製程腔室和如本發明提供的該承載裝置,其中,該裝載腔室和該製程腔室相互連通,該承載裝置可在該裝載腔室和該製程腔室之間移動。The present invention also provides a semiconductor heat treatment equipment, including a loading chamber, a process chamber, and the carrying device provided by the present invention, wherein the loading chamber and the processing chamber communicate with each other, and the carrying device can be placed in the loading chamber and move between the process chambers.
本發明具有以下有益效果: 本發明提供的半導體熱處理設備的承載裝置,將複數測溫組件均設置在支撐件上,且沿承載主體的軸向間隔排佈,每個測溫組件均具有延伸至承載位的邊緣內側的測溫端,用於對與該測溫端對應的分區的溫度進行檢測,由於上述測溫端延伸至承載位的邊緣內側,這可以減小測溫端與對應的分區中各承載位所承載的晶圓之間的距離,從而可以減小甚至消除各測溫組件的溫度測量值與晶圓的實際溫度之間的誤差,從而能夠提高對晶圓測溫的準確性,以使各測溫組件的溫度測量值能夠表徵晶圓的實際溫度,進而無需與其它測溫元件配合使用,以提高晶圓的良品率,降低成本,提高半導體熱處理設備的使用率。此外,藉由將測溫裝置的支撐件與承載主體連接,並位於承載主體的承載位的邊緣外側,可以使測溫裝置能夠隨承載主體的移動而移動,避免支撐件上的各測溫組件對承載主體的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。 The present invention has the following beneficial effects: In the carrying device of the semiconductor heat treatment equipment provided by the present invention, a plurality of temperature measuring components are arranged on the support and arranged at intervals along the axial direction of the carrying body. Each temperature measuring component has a measuring The temperature end is used to detect the temperature of the partition corresponding to the temperature measurement end. Since the above temperature measurement end extends to the inner side of the edge of the bearing position, this can reduce the load on the temperature measurement end and each bearing position in the corresponding partition. The distance between the wafers can reduce or even eliminate the error between the temperature measurement value of each temperature measurement component and the actual temperature of the wafer, thereby improving the accuracy of the temperature measurement of the wafer, so that each temperature measurement component The temperature measurement value can represent the actual temperature of the wafer, so it does not need to be used in conjunction with other temperature measuring components to improve the yield of the wafer, reduce costs, and increase the utilization rate of semiconductor heat treatment equipment. In addition, by connecting the support of the temperature measuring device with the carrying body and being located outside the edge of the carrying position of the carrying body, the temperature measuring device can move with the movement of the carrying body, avoiding the temperature measuring components on the support Interference is caused to the movement of the carrying body, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be guaranteed.
本發明提供的半導體熱處理設備,藉助本發明提供的上述承載裝置,能夠提高對晶圓測溫的準確性,從而無需與其它測溫元件配合使用,以提高晶圓的良品率,降低成本,提高半導體熱處理設備的使用率。此外,還可以避免支撐件上的各測溫組件對承載主體的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。The semiconductor heat treatment equipment provided by the present invention can improve the accuracy of wafer temperature measurement by means of the above-mentioned carrying device provided by the present invention, so that it does not need to be used in conjunction with other temperature measuring elements to improve the yield of wafers, reduce costs, and improve Utilization rate of semiconductor thermal processing equipment. In addition, it is also possible to prevent the temperature measuring components on the support from interfering with the movement of the carrying body, thus ensuring the normal transmission of the carrying device in the semiconductor heat treatment equipment.
為使本領域的技術人員更好地理解本發明的技術方案,下面結合附圖來對本發明提供的半導體熱處理設備的承載裝置及半導體熱處理設備進行詳細描述。 In order for those skilled in the art to better understand the technical solution of the present invention, the carrying device of the semiconductor heat treatment equipment and the semiconductor heat treatment equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.
如圖2所示,本實施例提供一種半導體熱處理設備的承載裝置,包括測溫裝置和承載主體21,其中,該承載主體21包括複數用於承載晶圓32的承載位,且複數承載位沿承載主體的軸向間隔排佈。具體地,承載主體21上設置有沿其軸向間隔排佈的多層插槽,每層插槽能夠插設一個晶圓32,該插槽的用於放置晶圓32的位置即為上述承載位。
As shown in Figure 2, this embodiment provides a carrier device for semiconductor heat treatment equipment, including a temperature measuring device and a
測溫裝置包括支撐件22和複數測溫組件23,其中,支撐件22與承載主體21連接,且位於承載主體21的上述承載位外側。具體地,上述支撐件22例如呈柱狀,且沿承載主體21的軸向延伸設置。複數測溫組件23均設置在支撐件22上,且沿承載主體21的軸向間隔設置排佈,並且每個測溫組件23均具有延伸至上述承載位的邊緣內側的測溫端,用於對與該測溫端對應的分區的溫度進行檢測。
The temperature measurement device includes a
承載主體21的用於容置所有晶圓32的整個區域,在承載主體21的軸向上劃分有複數分區211,該分區211的數量與測溫組件23的數量相同,且各個測溫組件23的測溫端一一對應地延伸至各個分區211中,以對該分區211的溫度進行檢測。例如,如圖2所示,上述整個區域平均劃分為5個分區211,對應的,測溫組件23為5個,且各個測溫組件23的測溫端一一對應地
延伸至各個分區211中,可選的,每個測溫組件23的測溫端位於對應的分區211中最上層的晶圓32的上方,但是,本發明並不侷限於此,在實際應用中,每個測溫組件23的測溫端還可以位於對應的分區中的任意一層晶圓32的上方或下方,本發明對此沒有特別的限制。
The entire area of the
需要說明的是,各個分區211中的晶圓32的數量可以為一個或者多個,本發明對此沒有特別的限制。測溫組件23檢測到的對應分區211的溫度可用於表徵該分區211中的晶圓32的實際溫度。
It should be noted that the number of
還需要說明的是,在本實施例中,分區211的數量與測溫組件23的數量相同,但是,本發明並不侷限於此,在實際應用中,一個測溫組件23也可以對應複數分區211,而且不同的測溫組件23所對應的分區211的數量可以相同,也可以不同。
It should also be noted that in this embodiment, the number of
本實施例提供的半導體熱處理設備的承載裝置,將複數測溫組件23均設置在支撐件22上,且沿承載主體21的軸向間隔排佈,每個測溫組件23均具有延伸至承載位的邊緣內側的測溫端,用於對與該測溫端對應的分區211的溫度進行檢測,由於上述測溫端延伸至承載位的邊緣內側,這可以減小測溫端與對應的分區211中各承載位所承載的晶圓之間的距離,從而可以減小甚至消除各測溫組件23的溫度測量值與晶圓32的實際溫度之間的誤差,從而能夠提高對晶圓測溫的準確性,以使各測溫組件23的溫度測量值能夠表徵晶圓的實際溫度,進而無需與其它測溫元件配合使用,以提高晶圓的良品率,降低成本,提高半導體熱處理設備的使用率。此外,藉由將測溫組件23的支撐件22與承載主體21連接,並位於承載主體21的承載位的邊緣外側,可以使測溫組件23能夠隨承載主體21的移動而移動,避免支撐件22上的各測溫組件23對承載主體21的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。In the carrying device for semiconductor heat treatment equipment provided in this embodiment, a plurality of temperature measuring
本實施例提供的上述承載裝置例如可以應用於半導體立式爐設備,在這種情況下,上述承載主體21的軸向即為垂直方向,但是,承載裝置的結構並不以此為限,例如,其還可以適用於半導體臥式爐設備,即,上述承載主體21的軸向與水平面相互平行。需要說明的是,在適用於半導體臥式爐設備的承載裝置中,各測溫組件23的測溫端向承載主體21的承載位的邊緣內側延伸,可以一一對應地延伸至各分區211的一側(例如左側或右側)。The above-mentioned carrying device provided in this embodiment can be applied to semiconductor vertical furnace equipment, for example. In this case, the axial direction of the above-mentioned carrying
如圖3和圖4所示,以半導體熱處理設備為半導體立式爐設備為例,半導體立式爐設備中可以設置有相互連通的裝載腔室201和製程腔室202,其中,裝載腔室201位於製程腔室202的下方,本實施例提供的上述承載裝置可以在裝載腔室201中對晶圓32進行裝卸,裝載腔室201中可以設置有升降裝置204,用於驅動承載裝置整體上升至製程腔室202中,或下降至裝載腔室201中。As shown in Figures 3 and 4, taking semiconductor heat treatment equipment as a semiconductor vertical furnace equipment as an example, a
製程腔室202中可以設置有製程管203,可選的,該製程管203的製作材料可以採用石英,上述承載裝置可以上升至製程腔室202中,並進入製程管203的內部空間中,本實施例提供的承載裝置中,藉由使測溫裝置的支撐件22與承載主體21連接,因此,測溫裝置可以隨承載主體21的升降而升降,即,測溫裝置可以隨承載主體21上升至製程腔室202中,或下降至裝載腔室201中,從而避免支撐件22上的各測溫組件23對承載主體21的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。但是,半導體立式爐設備的結構並不以此為限,例如,裝載腔室201也可以位於製程腔室202的上方。A
另外,半導體熱處理設備的類型也並不限於半導體立式爐設備,例如,半導體熱處理設備也可以為半導體臥式爐設備,半導體臥式爐設備中也可以設置有相互連通的裝載腔室201和製程腔室202,此時,裝載腔室201可以位於製程腔室202的右側,也可以位於製程腔室202的左側,裝載腔室201中可以設置有傳輸裝置,藉由將承載裝置放置於傳輸裝置上,以藉助傳輸裝置驅動承載裝置向左或向右平移至製程腔室202中,本實施例提供的承載裝置中,藉由使測溫裝置的支撐件22與承載主體21連接,因此,測溫裝置可以隨承載主體21的左右平移而左右平移,從而避免支撐件22上的各測溫組件23對承載主體21的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。In addition, the type of semiconductor heat treatment equipment is not limited to semiconductor vertical furnace equipment. For example, the semiconductor heat treatment equipment can also be semiconductor horizontal furnace equipment, and the semiconductor horizontal furnace equipment can also be provided with
如圖5和圖6所示,在本發明一較佳實施例中,測溫組件23可以包括延伸部件231和測溫部件232,其中,延伸部件231的一端與支撐件22連接,另一端作為上述測溫端延伸至上述承載位的邊緣內側;測溫部件232設置在延伸部件231內,且位於上述測溫端處,並且測溫部件232的接線(用作訊號傳輸部件)依次藉由延伸部件231和支撐件22引出,以能夠延伸至製程腔室202的外部。上述延伸部件231用於對設置在其中的測溫部件232進行支撐以及保護,同時能夠使測溫部件232位於更靠近晶圓32中心的區域。As shown in Figures 5 and 6, in a preferred embodiment of the present invention, the
具體地,如圖5和圖6所示,支撐件22和延伸部件231可以均為中空結構,且延伸部件231的內部空間與支撐件22的內部空間相連通,測溫部件232設置在延伸部件231的內部空間中,且測溫部件232的接線依次經由延伸部件231的內部空間和支撐件22的內部空間引出。測溫部件232的接線作為訊號傳輸部件用於將測溫部件232在檢測溫度時所產生的電訊號傳輸至外部的接收處理部件(圖中未顯示),該接收處理部件用於對測溫部件232在檢測溫度時所產生的電訊號進行處理,以顯示各測溫部件232所測得的溫度。Specifically, as shown in Figure 5 and Figure 6, the
可選的,延伸部件231的製作材料可以包括石英。Optionally, the material of the
在本發明一較佳實施例中,各測溫部件232的測溫端可以與承載位的中心在承載主體21的軸向上相對設置。這樣設置,可以使各測溫部件232的測溫端與置於承載位上的晶圓圓心相對位置,從而可以使各測溫部件232測得的溫度檢測值能夠更接近晶圓32的中心溫度,進而進一步提高對晶圓32測溫的準確性。In a preferred embodiment of the present invention, the temperature measuring end of each
如圖6所示,在本發明一較佳實施例中,測溫部件232可以包括熱電偶,熱電偶可以包括第一電極、第二電極、第一連接件243、第二連接件244、第一導電件241、第二導電件242和絕緣部件25,其中,第一電極和第二電極間隔設置在延伸部件231內,且位於上述測溫端處;第一連接件243和第二連接件244間隔設置在延伸部件231內;第一導電件241和第二導電件242間隔設置在支撐件22內;上述第一電極藉由第一連接件243與第一導電件241電連接,上述第二電極藉由第二連接件244與第二導電件242電連接。上述第一連接件243、第二連接件244、第一導電件241和第二導電件242即為上述測溫部件232的接線,用於訊號傳輸。As shown in FIG. 6, in a preferred embodiment of the present invention, the
絕緣部件25設置在延伸部件231和支撐件22內,用於對第一導電件241和第二導電件242之間、第一連接件243和第二連接件244之間進行電絕緣。The insulating
上述第一電極和第二電極電導通,第一導電件241和第二導電件242在外部的接收處理部件中電導通,這兩個電導通處的溫度出現差異時,會在上述第一電極和第二電極所在的迴路中產生電動勢,接收處理部件可以接收到該電動勢並對電動勢進行處理,就可以將各測溫部件232所測得的溫度顯示出來。The above-mentioned first electrode and the second electrode are electrically connected, and the first
藉助上述絕緣部件25,對第一導電件241和第二導電件242之間、第一連接件243和第二連接件244之間進行電絕緣,可以避免上述第一電極和第二電極所在的迴路在除了上述兩個電導通處之外的其他位置處電導通,從而可以保證該迴路上產生電動勢的準確性,從而提高測溫裝置的測溫準確性。By means of the above-mentioned insulating
可選的,第一電極的製作材料和第二電極的製作材料可以包括貴金屬。Optionally, the material for making the first electrode and the material for making the second electrode may include noble metals.
較佳的,第一電極的製作材料可以為鉑銠合金,第二電極的製作材料可以為鉑。Preferably, the material for making the first electrode may be platinum-rhodium alloy, and the material for making the second electrode may be platinum.
可選的,鉑銠合金中銠的占比範圍可以為10%-13%,鉑的占比範圍可以為90%-87%。Optionally, the proportion of rhodium in the platinum-rhodium alloy may range from 10% to 13%, and the proportion of platinum may range from 90% to 87%.
較佳的,鉑銠合金中銠的占比可以為13%,鉑的占比可以為87%。Preferably, the proportion of rhodium in the platinum-rhodium alloy can be 13%, and that of platinum can be 87%.
可選的,第一連接件243的製作材料可以包括貴金屬。較佳的,第一連接件243的製作材料可以為鉑銠合金。Optionally, the first connecting
可選的,第二連接件244的製作材料可以包括貴金屬。較佳的,第二連接件244的製作材料可以為鉑銠合金。Optionally, the second connecting
可選的,第一導電件241的製作材料可以包括貴金屬。較佳的,第一導電件241的製作材料可以為鉑銠合金。Optionally, the material for making the first
可選的,第二導電件242的製作材料可以包括貴金屬。較佳的,第二導電件242的製作材料可以為鉑銠合金。Optionally, the material for making the second
可選的,第一連接件243的製作材料和第一導電件241的製作材料可以相同,第二連接件244的製作材料和第二導電件242的製作材料可以相同。Optionally, the first connecting
如圖6所示,在本發明一較佳實施例中,絕緣部件25可以包括絕緣套管,該絕緣套管內設置有相互電絕緣的第一通道和第二通道,其中,第一通道用於供第一導電件241和第一連接件243穿過,第二通道用於供第二導電件242和第二連接件244穿過。由此,可以實現第一導電件241和第二導電件242之間、第一連接件243和第二連接件244之間的電絕緣。As shown in FIG. 6, in a preferred embodiment of the present invention, the insulating
如圖7所示,在本發明一較佳實施例中,支撐件22上設置有限位部件26,該限位部件26與承載主體21相配合,用於限制支撐件22相對於承載主體21轉動,這樣可以避免設置支撐件22上的測溫部件232與承載位的相對位置發生變化,進而提高測溫裝置測溫的穩定性。As shown in FIG. 7 , in a preferred embodiment of the present invention, a limiting
如圖8和圖9所示,在本發明一較佳實施例中,限位部件26可以設置在支撐件22上,具體地,限位部件26具有可套設在支撐件22上的通孔。承載主體21上開設有限位槽,限位部件26設置在該限位槽中,且限位部件26的外周面與限位槽的內周面相配合,以限制限位部件26相對於限位槽轉動,從而限制支撐件22相對於承載主體21轉動。As shown in Figures 8 and 9, in a preferred embodiment of the present invention, the
如圖9所示,可選的,在承載主體21的底部可以設置有法蘭盤30,上述限位槽可以開設在法蘭盤30的邊緣。As shown in FIG. 9 , optionally, a
如圖2所示,可選的,法蘭盤30上可以設置有保溫裝置31,以在半導體熱處理製程中對承載於承載主體21上的晶圓32進行保溫,避免承載於承載主體21上的晶圓32在半導體熱處理製程中快速散熱。As shown in Figure 2, optionally, a
可選的,限位部件26的高度可以為8毫米-10毫米。Optionally, the height of the limiting
可選的,限位部件26的長度可以為12毫米-16毫米。Optionally, the length of the limiting
可選的,限位部件26的寬度可以為12毫米-16毫米。Optionally, the width of the limiting
如圖11所示,在本發明一較佳實施例中,支撐件22上可以設置有固定結構,承載主體21上可以設置有固定部271,如圖10所示,承載裝置可以還包括固定組件28,用於可拆卸地連接固定結構與固定部271,以將支撐件22可拆卸的固定在承載主體21上。藉助固定組件28可拆卸地連接固定結構與固定部271,使支撐件22可拆卸的固定在承載主體21上,以能夠便於對測溫裝置進行維護或者更換。As shown in FIG. 11, in a preferred embodiment of the present invention, a fixing structure may be provided on the
如圖11所示,在本發明一較佳實施例中,固定結構可以包括設置在支撐件22上的凸臺29,固定部271中可以開設有供凸臺29穿過的固定孔272,固定部271的外周壁上設置有外螺紋273,固定組件28可以包括固定件281、第一彈性件283、第二彈性件284、壓緊件285和彈性密封件286,其中,固定件281中開設有固定槽282,固定槽282的內周壁上設置有與外螺紋273配合的內螺紋,第一彈性件283、第二彈性件284、壓緊件285和彈性密封件286由下而上依次疊置在固定槽282中,且均套設在支撐件22上,彈性密封件286位於壓緊件285與固定部271伸入至固定槽282中的一端之間。As shown in Figure 11, in a preferred embodiment of the present invention, the fixing structure may include a
如圖10和圖11所示,固定部271可以設置在承載主體21底部的法蘭盤30上,固定部271沿法蘭盤30向下延伸,其中開設有供凸臺29穿過的固定孔272,其外周壁上設置有外螺紋273,固定槽282的內周壁上的內螺紋與固定部271外周壁上的外螺紋273螺紋配合,以使固定件281與固定部271可拆卸的連接,第一彈性件283設置在固定槽282的底部,並套設在支撐件22上,第二彈性件284疊置在第一彈性件283上,並套設在支撐件22上,壓緊件285疊置在第二彈性件284上,並套設在支撐件22上,彈性密封件286疊置在壓緊件285上,並套設在支撐件22上,且位於壓緊件285與固定部271伸入至固定槽282中的一端之間,藉由固定件281與固定部271的螺紋配合,將第一彈性件283、第二彈性件284、壓緊件285和彈性密封件286壓緊固定在固定槽282中,並藉由第一彈性件283、第二彈性件284、壓緊件285和彈性密封件286均套設在支撐件22上,以藉由第一彈性件283、第二彈性件284、壓緊件285和彈性密封件286將支撐件22夾緊其中,從而將支撐件22可拆卸地固定在承載主體21上,並避免支撐件22相對於固定孔272和固定槽282晃動,從而避免設置在支撐件22上的測溫部件232與承載位的相對位置發生變化,進而提高測溫裝置測溫的穩定性。
As shown in Figures 10 and 11, the fixing
可選的,彈性密封件286可以包括O型橡膠圈。
Optionally, the
可選的,第一彈性件283的製作材料可以包括聚四氟乙烯(Poly tetra fluoroethylene,簡稱PTFE)。
Optionally, the first
可選的,第二彈性件284的製作材料可以包括聚四氟乙烯。
Optionally, the second
可選的,壓緊件285的製作材料可以包括不銹鋼。
Optionally, the pressing
如圖2和圖3所示,作為另一個技術方案,本發明實施例還提供一種半導體熱處理設備,包括裝載腔室201、製程腔室202和如本發明實施例提供的承載裝置,其中,裝載腔室201和製程腔室202相互連通,承載裝置可在裝載腔室201和製程腔室202之間移動。
As shown in Figure 2 and Figure 3, as another technical solution, an embodiment of the present invention also provides a semiconductor heat treatment equipment, including a
綜上所述,本發明實施例提供的半導體熱處理設備,藉助本發明實施例提供的上述承載裝置,能夠提高對晶圓測溫的準確性,從而無需與其它測溫元件配合使用,以提高晶圓的良品率,降低成本,提高半導體熱處理設備的使用率。此外,還可以避免支撐件上的各測溫組件對承載主體的移動造成干涉,從而可以保證承載裝置在半導體熱處理設備中的正常傳輸。 To sum up, the semiconductor heat treatment equipment provided by the embodiment of the present invention can improve the accuracy of the temperature measurement of the wafer with the help of the above-mentioned carrying device provided by the embodiment of the present invention, so that it does not need to be used in conjunction with other temperature measuring elements to improve the temperature of the wafer. Round yield rate, reduce costs, improve the utilization rate of semiconductor heat treatment equipment. In addition, it is also possible to prevent the temperature measuring components on the support from interfering with the movement of the carrying body, thus ensuring the normal transmission of the carrying device in the semiconductor heat treatment equipment.
可以理解的是,以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式,然而本發明並不侷限於此。對於本領域內的普通技術人員而言,在不脫離本發明的精神和實質的情況下,可以做出各種變型和改進,這些變型和改進也視為本發明的保護範圍。It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.
11:裝卸腔室 11: Loading and unloading chamber
12、202:製程腔室 121:石英管 13:晶舟 14:測溫裝置 201:裝載腔室 203:製程管 204:升降裝置 21:承載主體 211:承載區域 22:支撐件 23:測溫組件 231:延伸部件 232:測溫部件 241:第一導電件 242:第二導電件 243:第一連接件 244:第二連接件 25:絕緣部件 26:限位部件 271:固定部 272:固定孔 273:外螺紋 28:固定組件 281:固定件 282:固定槽 283:第一彈性件 284:第二彈性件 285:壓緊件 286:彈性密封件 29:凸臺 30:法蘭盤 31:保溫裝置 32:晶圓 12, 202: process chamber 121: Quartz tube 13: crystal boat 14: Temperature measuring device 201: Loading chamber 203: process tube 204: lifting device 21: Carrying the main body 211: bearing area 22: Support 23:Temperature measurement components 231: extension part 232:Temperature measuring part 241: the first conductive part 242: the second conductive member 243: The first connector 244: Second connector 25: Insulation parts 26: Limiting parts 271: fixed part 272: Fixing hole 273: external thread 28: Fixed components 281:Fixer 282: fixed slot 283: the first elastic piece 284: second elastic member 285: Compression piece 286: Elastomeric seal 29:Boss 30: Flange 31: Thermal insulation device 32: Wafer
圖1為現有的半導體立式爐設備及晶舟的結構示意圖; 圖2為本發明實施例提供的半導體熱處理設備的承載裝置的結構示意圖; 圖3為本發明實施例提供的半導體熱處理設備的承載裝置位於製程腔室時的結構示意圖; 圖4為本發明實施例提供的半導體熱處理設備的承載裝置位於裝載腔室時的結構示意圖; 圖5為本發明實施例提供的半導體熱處理設備的承載裝置中測溫裝置的結構示意圖; 圖6為圖5中A處的局部放大結構示意圖; 圖7為本發明實施例提供的半導體熱處理設備的承載裝置中測溫裝置的結構示意圖; 圖8為圖7中B處的局部放大結構示意圖; 圖9為本發明實施例提供的半導體熱處理設備的承載裝置中限位部件與法蘭盤配合時的結構示意圖;圖10為本發明實施例提供的半導體熱處理設備的承載裝置的結構示意圖;圖11為圖10中C處的局部放大結構示意圖。 Fig. 1 is the structural representation of existing semiconductor vertical furnace equipment and crystal boat; FIG. 2 is a schematic structural view of a carrier device of semiconductor heat treatment equipment provided by an embodiment of the present invention; Fig. 3 is a schematic structural view of the semiconductor heat treatment equipment provided by the embodiment of the present invention when the carrying device is located in the process chamber; Fig. 4 is a schematic structural view of the semiconductor heat treatment equipment provided by the embodiment of the present invention when the carrying device is located in the loading chamber; Fig. 5 is a structural schematic diagram of a temperature measuring device in a carrier device of semiconductor heat treatment equipment provided by an embodiment of the present invention; Fig. 6 is a schematic diagram of a partially enlarged structure at A in Fig. 5; Fig. 7 is a schematic structural diagram of a temperature measuring device in a carrier device of semiconductor heat treatment equipment provided by an embodiment of the present invention; Fig. 8 is a schematic diagram of a partially enlarged structure at B in Fig. 7; Fig. 9 is a schematic structural view of the supporting device of the semiconductor heat treatment equipment provided by the embodiment of the present invention when the limit part is matched with the flange; Fig. 10 is a schematic structural view of the carrying device of the semiconductor heat treatment equipment provided by the embodiment of the present invention; Fig. 11 It is a schematic diagram of a partially enlarged structure at point C in FIG. 10 .
21:承載主體 21: Carrying the main body
211:承載區域 211: bearing area
22:支撐件 22: Support
23:測溫組件 23:Temperature measurement components
28:固定組件 28: Fixed components
30:法蘭盤 30: Flange
31:保溫裝置 31: Thermal insulation device
32:晶圓 32: Wafer
Claims (8)
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CN112530826B (en) * | 2020-11-27 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Carrier device of semiconductor heat treatment equipment and semiconductor heat treatment equipment |
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