JP6478106B2 - Prober - Google Patents

Description

  The present invention relates to a prober for inspecting the electrical characteristics of a plurality of semiconductor devices (chips) formed on a semiconductor wafer, and more particularly to a prober having a plurality of measurement units stacked in a multistage manner.

  The semiconductor manufacturing process has a large number of processes, and various inspections are performed in various manufacturing processes to improve quality assurance and yield. For example, when a plurality of chips of the semiconductor device are formed on the semiconductor wafer, the electrode pads of the semiconductor device of each chip are connected to the test head, the power and the test signal are supplied from the test head, and the semiconductor device outputs Wafer level inspections are performed in which signals are measured by a test head to electrically inspect whether they operate properly.

  After wafer level inspection, the wafer is attached to the frame and diced into individual chips with a dicer. For each chip that has been cut, only chips that have been confirmed to operate properly are packaged in the next assembly process, and malfunctioning chips are removed from the assembly process. In addition, the packaged final product is subjected to shipping inspection.

  Wafer level inspection is performed using a prober that brings probes into contact with the electrode pads of each chip on the wafer. Is the probe electrically connected to the terminal of the test head, and the test head supplies power and test signals to each chip through the probe, and does the test head detect the output signal from each chip and operate normally? Measure

  In the semiconductor manufacturing process, in order to reduce the manufacturing cost, the enlargement of the wafer and the further miniaturization (integration) are being promoted, and the number of chips formed on one wafer becomes very large. ing. Along with this, the time required for inspection of one wafer with a prober is also long, and improvement in throughput is required. Therefore, in order to improve the throughput, multi-probing is performed in which a large number of probes are provided so that a plurality of chips can be inspected simultaneously. In recent years, the number of chips to be simultaneously inspected has been increasing and attempts have been made to simultaneously inspect all the chips on a wafer. Therefore, the tolerance of the alignment which contacts an electrode pad and a probe is small, and it is calculated | required that a position accuracy of the movement in a prober is raised.

  On the other hand, although it is conceivable to increase the number of probers as the simplest way to increase the throughput, when the number of probers is increased, there arises a problem that the installation area of the prober in the manufacturing line also increases. In addition, if the number of probers is increased, the cost of the apparatus will be increased accordingly. Therefore, it is required to suppress the increase of the installation area and the increase of the device cost to increase the throughput.

  The applicant of the present application has proposed a prober having a plurality of measurement units stacked in a multistage manner (see Patent Document 1). In this prober, a wafer level inspection can be performed for each measurement unit because it has a stacked structure (multistage structure) in which a plurality of measurement units are stacked in a multistage manner, thereby suppressing an increase in installation area and an increase in apparatus cost. Throughput can be improved.

JP, 2014-150168, A

  By the way, in the above prober proposed by the applicant of the present invention, since a plurality of measurement units have a stacked structure in which the measurement units are stacked in a multistage manner, for example, inspection (high temperature measurement) of a high temperature chip is performed for each step. Inspection (cold measurement) of the chip in a low temperature state can be performed. In this case, the heating and cooling of the chip is performed by the wafer chuck that holds the wafer on which the chip is formed.

  However, the above prober has the following problems because the case for forming a plurality of measurement units is formed by an integral type lattice frame (an integral type case) in which a plurality of frames are combined in a grid shape. .

  That is, when high-temperature measurement is performed in, for example, the measurement unit of one stage among the plurality of stages, thermal expansion of peripheral members occurs due to the parts around the wafer chuck being warmed. In addition, when the low temperature measurement is performed, the peripheral members shrink due to the parts around the wafer chuck being cooled. In addition to the wafer chuck, the test head also serves as a heat source to deform the casing around it. The deformation of the casing affects the casing portion around the measurement units of the other stages, and the parallelism between the probe and the wafer chuck changes in the measurement units disposed in each stage, and the wafer positioning with respect to the probes There is a problem that the accuracy is deteriorated and the measurement accuracy of the wafer level inspection is lowered.

  The present invention has been made in view of such circumstances, and prevents deformation of a prober housing having a plurality of measurement units stacked in a multistage manner, improves wafer positioning accuracy with respect to the probe, and performs wafer level inspection. It is an object of the present invention to provide a prober capable of performing with high accuracy.

  In order to achieve the above object, a prober according to the present invention is a prober having a plurality of measurement units stacked in a multistage manner, and is provided with a case for forming a plurality of measurement units in a divided manner. Each has a plurality of separate housings that are independent of one another, and each of the plurality of separate housings has a support leg that is installed on the floor surface.

  According to the present invention, since the case is constituted by a separated case formed of a plurality of separated cases which are independent of each other in each stage, the positioning accuracy of the wafer with respect to the probe is improved, and the wafer level inspection is made highly accurate. It will be possible to do.

  In one aspect of the prober according to the present invention, the support leg preferably has a level pad for adjusting the height of the floor surface and the separation housing. According to this aspect, it becomes possible to easily adjust the horizontal direction and the height direction with respect to the floor surface of each of the separate cases constituting the case.

  In one aspect of the prober according to the present invention, it is preferable that a plurality of separate housings be configured in a nested manner. According to this aspect, since the plurality of separated housings are formed in a nested shape, space saving can be achieved while suppressing an increase in the installation area.

  In one aspect of the prober according to the present invention, a heat insulating material or a damping material is preferably disposed between the plurality of separate housings. According to this aspect, since the heat insulating material or the vibration damping material is disposed between the separate housings, it is effective that the influence of the heat or vibration generated in the measurement part of each stage is applied to the measurement parts of the other stages. Can be prevented.

  In one aspect of the prober according to the present invention, the measuring unit preferably includes a test head, a probe card having a probe, and a wafer chuck for holding a wafer. This aspect shows a specific aspect of the measurement unit.

  In one aspect of the prober according to the present invention, an alignment device for performing relative alignment between the wafer held by the wafer chuck and the probe is provided, and the alignment device is provided in each row and arranged in the same row It is preferable to be configured to be movable between the plurality of measurement units. As in this aspect, even when the alignment device is configured to be movable between a plurality of measurement units arranged in the same stage, the case is configured of a plurality of separate casings, so that the other stages Since the vibration is less likely to be transmitted to the measurement part and deformation is prevented, the effects of the present invention can be made remarkable.

  According to the present invention, the positioning accuracy of the wafer with respect to the probe is improved, and the wafer level inspection can be performed with high accuracy.

An external view showing an entire configuration of a prober according to an embodiment of the present invention A plan view showing the prober shown in FIG. 1 Figure showing the internal structure of the measurement unit of Figure 1 (front view) Diagram showing the internal structure of the measurement unit of FIG. 1 (side view) Schematic diagram showing the configuration of the measurement unit Diagram showing the test head, pogo frame, probe card, and wafer chuck integrated Diagram showing another configuration example of the case A diagram showing yet another configuration example of the housing

  Hereinafter, preferred embodiments of the present invention will be described with reference to the attached drawings.

  FIG. 1 is an external view showing the entire configuration of a prober according to an embodiment of the present invention. FIG. 2 is a plan view showing the prober shown in FIG.

  As shown in FIGS. 1 and 2, the prober 10 of the present embodiment is disposed adjacent to the loader unit 14 for supplying and recovering the wafer W to be inspected (see FIG. 5) and a plurality of measurements. And a measuring unit 12 having a portion 16. Measurement unit 12 has a plurality of measurement units 16. When wafer W is supplied from loader unit 14 to each measurement unit 16, each measurement unit 16 inspects the electric characteristics of each chip of wafer W. (Wafer level inspection) is performed. Then, the wafer W inspected by each measurement unit 16 is recovered by the loader unit 14. The prober 10 also includes an operation panel 21 and a control device (not shown) for controlling each part.

  The loader unit 14 has a load port 18 on which the wafer cassette 20 is mounted, and a transfer unit 22 for transferring the wafer W between the measurement units 16 of the measurement unit 12 and the wafer cassette 20. The transport unit 22 includes a transport unit drive mechanism (not shown), and is configured to be movable in the X and Z directions, and is configured to be rotatable in the θ direction (around the Z direction). Further, the transport unit 22 includes a transport arm 24, and the transport unit 24 can be extended and retracted back and forth by the transport unit drive mechanism. A suction pad (not shown) is provided on the upper surface of the transfer arm 24. The transfer arm 24 holds the wafer W by vacuum suction of the back surface of the wafer W by the suction pad. Thus, the wafer W in the wafer cassette 20 is taken out by the transfer arm 24 of the transfer unit 22 and transferred to the measurement units 16 of the measurement unit 12 while being held on the upper surface thereof. Further, the inspected wafer W after the inspection is returned from each measuring unit 16 to the wafer cassette 20 in the reverse path.

  3 and 4 show the internal structure of the measurement unit 12 of FIG. FIG. 3 is a view of the measurement unit 12 as viewed from the front side (the loader unit 14 side), and FIG. 4 is a view of the measurement unit 12 as viewed from a side. FIG. 5 is a schematic view showing the configuration of the measurement unit 16.

  As shown in FIGS. 3 and 4, the measurement unit 12 has a stacked structure (multistage structure) in which a plurality of measurement units 16 are stacked in a multistage manner, and each measurement unit 16 extends in the X and Z directions. It is arranged in two dimensions along the side. In the present embodiment, as an example, four measurement units 16 are stacked in three stages in the Z direction in the X direction.

  The measurement unit 12 is provided with a housing 30 that defines a plurality of measurement units 16. The housing 30 has a grid shape in which a plurality of frames are combined in a grid shape, and as described in detail later, a separate type housing consisting of a plurality of separate housings 80A to 80C separated from each other for each stage Make up the body.

  Each measurement unit 16 has the same configuration, and as shown in FIG. 5, the wafer chuck 50 holding the wafer W, the head stage 52, the test head 54, the probe card 56, and the test A pogo frame 58 interposed between the head 54 and the probe card 56 is provided.

  The test head 54 is supported above the head stage 52 by a test head holder not shown. The test head 54 is electrically connected to the probes 66 of the probe card 56, supplies power and test signals to the respective chips for electrical inspection, and detects and properly operates output signals from the respective chips. To measure

  The head stage 52 is supported by the housing 30 and has a pogo frame attachment portion 53 formed of a circular opening corresponding to the planar shape of the pogo frame 58. The pogo frame attachment portion 53 has a positioning pin 63, and the pogo frame 58 is fixed to the pogo frame attachment portion 53 in a state of being positioned by the positioning pin 63. There is no particular limitation on the method of fixing the pogo frame 58. For example, there is a method of fixing the pogo frame 58 by vacuum suction on the supporting surface (suction surface) of the pogo frame mounting portion 53 by suction means not shown. It is suitable. In addition, you may use mechanical fixing means, such as a screw, as fixing means other than vacuum suction, for example.

  The pogo frame 58 electrically connects each terminal formed on the lower surface (surface facing the pogo frame 58) of the test head 54 and each terminal formed on the upper surface (surface facing the pogo frame 58) of the probe card 56. There are a number of pogo pins (not shown) connected to the Further, ring-shaped seal members 60 and 62 are formed on the outer peripheral portions of the upper surface (the surface facing the test head 54) and the lower surface (the surface facing the probe card 56) of the pogo frame 58, respectively. Then, the space enclosed by the test head 54, the pogo frame 58 and the seal member 60, and the space enclosed by the probe card 56, the pogo frame 58 and the seal member 62 are decompressed by suction means not shown. The head 54, the pogo frame 58, and the probe card 56 are integrated (see FIG. 6).

The probe card 56 has a large number of probes 66 corresponding to the electrodes of each chip of the wafer W. Each probe 66 is formed to project downward from the lower surface (surface facing the wafer chuck 50) of the probe card 56, and each terminal provided on the upper surface (surface facing the pogo frame 58) of the probe card 56 Are connected electrically. Therefore, when the test head 54, the pogo frame 58, and the probe card 56 are integrated, each probe 66 is electrically connected to each terminal of the test head 54 via the pogo frame 58. The probe card 56 of this example is provided with a large number of probes 66 corresponding to the electrodes of all the chips of the wafer W to be inspected, and each measuring unit 16 measures all the chips on the wafer W held by the wafer chuck 50. The wafer chuck 50 on which the simultaneous inspection is performed sucks and fixes the wafer W by vacuum suction or the like. The wafer chuck 50 is detachably supported by an alignment device 70 described later, and can be moved in the X, Y, Z, θ directions by the alignment device 70. Further, a ring-shaped sealing member 64 is provided on the outer peripheral portion of the upper surface (wafer mounting surface) of the wafer chuck 50. Then, the space surrounded by the probe card 56, the wafer chuck 50, and the seal member 64 is decompressed by suction means (not shown), whereby the wafer chuck 50 is drawn toward the probe card 56. As a result, each probe 66 of the probe card 56 comes into contact with the electrode pad of each chip of the wafer W, and the inspection can be started.

  Inside the wafer chuck 50, a heating / cooling source as a heating / cooling source so that the electrical property inspection can be performed in a high temperature state (eg, at most 150 ° C.) or a low temperature state (eg, at least −40 ° C.) A mechanism (not shown) is provided. As a heating and cooling mechanism, a known appropriate heater / cooler can be adopted, for example, a double layer structure of a heating layer of a surface heater and a cooling layer provided with a passage of a cooling fluid, or heat Various things are considered, such as a heating / cooling device having a single layer structure in which a cooling pipe having a heater wound around the conductor is embedded. Also, instead of electrical heating, a thermal fluid may be circulated, or a Peltier element may be used.

  The measurement unit 12 further includes an alignment device 70 that detachably supports the wafer chuck 50. The alignment device 70 is provided for each of the stages, and is configured to be movable relative to each other between the plurality of measurement units 16 arranged in each stage by an alignment device drive mechanism (not shown). That is, the alignment apparatus 70 is shared among a plurality of (four in this example) measurement units 16 arranged in the same stage, and mutually moves between the plurality of measurement units 16 arranged in the same stage. Do. Further, the alignment device 70 is fixed to a positioning and fixing device (not shown) when moved to each measurement unit 16, and moves the wafer chuck 50 in the X, Y, Z, θ directions by the alignment device drive mechanism described above. The relative alignment between the wafer W held by the wafer W and the probe card 56 is performed. Although not shown, in order to detect the relative positional relationship between the electrode of the chip of the wafer W held by the wafer chuck 50 and the probe 66, the alignment device 70 has a needle position detection camera and a wafer alignment camera. And have.

  The alignment apparatus 70 sucks and fixes the wafer chuck 50 by vacuum suction or the like. However, as long as the wafer chuck 50 can be fixed, a fixing means other than vacuum suction may be used. For example, the wafer chuck 50 is fixed by mechanical means. You may do so. Further, the alignment device 70 is provided with a positioning member (not shown) so that the relative positional relationship with the wafer chuck 50 is always constant.

  Next, an inspection method using the prober 10 of the present embodiment will be described.

  When inspection is performed using the prober 10 of the present embodiment, in the loader unit 14, the wafer W in the wafer cassette 20 is taken out by the transfer arm 24 of the transfer unit 22 and held on the upper surface of the transfer arm 24. Is transported to each measurement unit 16 of the measurement unit 12.

  On the other hand, in the measurement unit 12, the alignment device 70 provided for each stage moves to a predetermined measurement unit 16, positions the wafer chuck 50 on the upper surface of the alignment device 70, and fixes it by suction.

  Subsequently, the alignment device 70 moves the wafer chuck 50 to a predetermined delivery position. Then, when the wafer W is delivered from the transfer unit 22 of the loader unit 14, the wafer W is held on the upper surface of the wafer chuck 50.

  Next, the alignment apparatus 70 moves the wafer chuck 50 holding the wafer W to a predetermined alignment position, and the electrode of the chip of the wafer W held by the wafer chuck 50 by a needle position detection camera and wafer alignment camera not shown. The relative position between the wafer 66 and the probe 66 is detected, and the wafer chuck 50 is moved in the X, Y, Z, .theta. Directions based on the detected positional relationship, and the wafer W held by the wafer chuck 50 and the probe Perform relative alignment with the card 56.

  After this alignment is performed, the alignment apparatus 70 moves the wafer chuck 50 to a predetermined measurement position (position facing the probe card 56), and lifts the wafer chuck 50 until the wafer chuck 50 reaches a predetermined height. Let Then, the alignment apparatus 70 releases the fixing of the wafer chuck 50, and the wafer chuck 50 is separated from the alignment apparatus 70 in a state of being held by a support mechanism (chuck drop prevention mechanism) not shown. The support mechanism includes a plurality of holding units for holding the wafer chuck 50. As such a support mechanism, the one described in Patent Document 1 proposed by the present applicant can be used.

  When the wafer chuck 50 held by the support mechanism is pulled up to such a height that the seal member 64 formed on the upper surface thereof comes in contact with the lower surface (the surface facing the wafer chuck 50) of the probe card 56, the probe card 56 and the wafer chuck The wafer chuck 50 is drawn toward the probe card 56 by reducing the pressure in the space surrounded by the seal 50 and the seal member 64 by suction means (not shown), and the probe card 56 and the wafer chuck 50 are in close contact with each other. The respective probes 66 of 56 contact the electrode pads of the respective chips of the wafer W with a uniform contact pressure.

  As a result, as shown in FIG. 6, the measurement unit 16 is in a state in which the test head 54, the pogo frame 58, the probe card 56, and the wafer chuck 50 are integrated, and the wafer level inspection can be started.

  Thereafter, power and test signals are supplied from the test head 54 to the respective chips of the wafer W, and signals output from the chips are detected to conduct an electrical operation inspection.

  Thereafter, the wafer W is supplied onto the wafer chuck 50 by the same procedure for the other measurement units 16 and after the alignment operation and the contact operation are completed in each measurement unit 16, simultaneous inspection of each chip of the wafer W is performed. It will be done sequentially. That is, in each measuring unit 16, power and test signals are supplied from the test head 54 to the respective chips of the wafer W, and signals output from the chips are detected to conduct an electrical operation inspection.

  When the inspection in each measuring unit 16 is completed, the alignment apparatus 70 is sequentially moved to each measuring unit 16 to recover the wafer chuck 50 on which the inspected wafer W is held.

  That is, when the alignment device 70 moves to the measurement unit 16 where the inspection is completed, the alignment device 70 is elevated to a position where the upper surface thereof contacts the wafer chuck 50 and is surrounded by the probe card 56, the wafer chuck 50 and the seal member 64. Decompression of the space is released. At this time, since the wafer chuck 50 is held by the above-described support mechanism, the wafer chuck 50 is prevented from coming off. After the alignment apparatus 70 positions and fixes the wafer chuck 50 on the upper surface thereof, the wafer chuck 50 is released from the holding by the support mechanism. Further, the alignment apparatus 70 moves the wafer chuck 50 to a predetermined delivery position, releases the fixed wafer W from the wafer chuck 50, and delivers the wafer W to the transfer unit 22. The inspected wafer W transferred to the transfer unit 22 is held by the transfer arm 24 and returned to the wafer cassette 20 disposed in the loader unit 14.

  In the present embodiment, as shown in FIG. 3 and FIG. 4, one wafer chuck 50 is assigned to each measurement unit 16, but the wafer chuck 50 is provided between a plurality of measurement units 16. It may be shared by In this case, the alignment apparatus 70 mutually moves the wafer chuck 50 among the plurality of measurement units 16 sharing the wafer chuck 50.

  Next, the configuration of the housing 30, which is a characteristic part of the present invention, will be described in detail.

  In the present embodiment, as shown in FIG. 3, the housing 30 is composed of a plurality of separate housings 80 (80A, 80B, 80C) which are independent of each other in each stage. That is, the housing 30 includes the first separated first separated housing 80A, the second separated second separated housing 80B, and the third separated third separated housing 80C. 80A-80C are mutually separated so that the heat and vibration which arise in measurement part 16 of each stage may not be directly transmitted to measurement part 16 of another stage. And each separation housing | casing 80 (80A, 80B, 80C) becomes a structure installed in a floor surface, having the support leg part 84 (84A-84C) which each became mutually independent. The specific configuration of each separation housing 80 is as follows.

  The first separate housing 80A includes a first frame main portion 82A configured by combining a plurality of frames extending in the X direction, the Y direction, and the Z direction in a grid shape, and the first frame main portion 82A The first support leg 84A is attached to the lower surface of the first support leg 84A.

  The second separate housing 80B is connected to a second frame main portion 82B configured by combining a plurality of frames extending in the X direction, the Y direction, and the Z direction in a lattice, and the second frame main portion 82B, And a support frame 86 for supporting the second frame main portion 82B at a predetermined height. The support frame 86 is spaced apart from the first frame main portion 82A, and the second support leg 84B is attached to the lower surface of the support frame 86.

  The third separate housing 80C is connected to a third frame main portion 82C configured by combining a plurality of frames extending in the X direction, the Y direction, and the Z direction in a lattice, and the third frame main portion 82C, And a support frame 88 supporting the third frame main portion 82C at a predetermined height. The column frame 88 is disposed on the outside of the column frame 86 (opposite to the frame body 40B) at a distance, and the third support leg 84C is attached to the lower surface of the column frame 88.

  The support legs 84A to 84C are not particularly limited as long as the separation housings 80A to 80C can be installed independently on the floor surface. In the present embodiment, as an example, each support leg portion 84A to 84C is configured by a level pad. According to this configuration, it is possible to easily adjust the horizontal direction and the height direction of the separated housings 80A to 80C with respect to the floor surface.

  As described above, according to the present embodiment, the second separated housing 80B is accommodated inside the third separated housing 80C, and the first separated housing 80A is accommodated inside the second separated housing 80B. . That is, each of the separated casings 80A to 80C has a nested configuration. And each separate housing | casing 80A-80C is mutually isolate | separated, and each has the support leg part 84A-84C which became independent, and is installed in a floor surface. Therefore, in the present embodiment, the influence of heat and vibration generated in the measurement unit 16 of each stage does not directly affect the measurement unit 16 of the other stage. As a result, deformation of the case 30 as a whole is less likely to occur, the positioning accuracy of the wafer W with respect to the probe 66 can be improved, and wafer level inspection can be performed with high accuracy.

  Further, in the present embodiment, as described above, since the case 30 is configured of the separated case including the plurality of separated cases 80 (80A to 80C), the measurement conditions can be easily changed for each stage. For example, the measurement unit 16 in the even-numbered stage can perform low-temperature measurement, and the measurement unit 16 in the odd-numbered stage can also perform high-temperature measurement.

  Further, in the present embodiment, it is possible to effectively prevent the vibration generated in the measuring unit 16 of each stage from being transmitted to the measuring unit 16 of the other stage by the separation type casing. Therefore, it is possible to shorten the time until the alignment device 70 arranged for each stage moves to the predetermined measurement unit 16 and to be fixed, and the probes 66 are brought into contact with the electrode pads of each chip of the wafer W The contact operation to be performed can be stably and surely performed, and the accuracy of the wafer level inspection can be improved.

  In the present embodiment, each separation housing 80 is preferably provided with a predetermined gap (gap) in consideration of deformation due to heat, vibration or dead weight. According to this configuration, even if deformation occurs in the separated casings 80 due to heat, vibration or the like, they do not contact each other, so the influence of one separated casing does not affect the other separated casings.

  Further, in the present embodiment, as shown in FIG. 7, a heat insulating material 90 may be provided between the separated casings 80. In FIG. 7, as an example, the heat insulating material 90 is provided on the surface of the first separated housing 80A opposite to the second separated housing 80B, and the second separated housing 80B is opposed to the third separated housing 80C. The heat insulating material 90 is provided on the Thereby, it is possible to effectively prevent the influence of the heat generated in the measurement units 16 of each stage from affecting the measurement units 16 of the other stages.

  Further, in the present embodiment, as shown in FIG. 8, a damping material 92 may be provided between the separated casings 80. In FIG. 8, as an example, damping materials 92 are provided between the first separated housing 80A and the second separated housing 80B and between the second separated housing 80B and the third separated housing 80C. . Thereby, it is possible to effectively prevent the influence of the vibration generated in the measurement units 16 of each stage from affecting the measurement units 16 of the other stages.

  As mentioned above, although the prober of the present invention has been described in detail, the present invention is not limited to the above examples, and it goes without saying that various improvements and modifications may be made without departing from the scope of the present invention. is there.

  DESCRIPTION OF SYMBOLS 10 Prober 12 Measurement unit 14 Loader unit 16 Measurement unit 18 Load port 20 Wafer cassette 21 Operation panel 22 Transport unit 24 Transport arm 30 Housing 50 ... Wafer chuck, 52 ... Head stage, 54 ... Test head, 56 ... Probe card, 56 ... Pogo frame, 60 ... Seal member, 62 ... Seal member, 64 ... Seal member, 66 ... Probe, 80 ... Separate housing, 80A ... first separated housing, 80B ... second separated housing, 80C ... third separated housing, 84 ... supporting leg, 84A ... first supporting leg, 84B ... second supporting leg, 84C ... third supporting Leg, 90 ... insulation, 92 ... damping material

Claims (8)

A prober having a plurality of measurement units stacked in a multistage manner,
And a housing that defines the plurality of measurement units.
The housing has a plurality of separate housings independent of one another for each tier,
Each of the plurality of separate housings has a support leg installed on the floor surface,
Prober. A prober having a plurality of measurement units stacked in a multistage manner,
And a housing that defines the plurality of measurement units.
The housing has a plurality of separate housings independent of one another for each tier,
Wherein the plurality of separation housing have a support leg respectively installed on the floor surface,
A thermal insulator is disposed between the plurality of separate housings,
Prober. A damping material is disposed between the plurality of separate housings,
The prober according to claim 2 . A prober having a plurality of measurement units stacked in a multistage manner,
And a housing that defines the plurality of measurement units.
The housing has a plurality of separate housings independent of one another for each tier,
Wherein the plurality of separation housing have a support leg respectively installed on the floor surface,
A damping material is disposed between the plurality of separate housings,
Prober. The support leg has a level pad for adjusting the height of the floor surface and the separation housing.
The prober according to any one of claims 1 to 4 . The plurality of separate housings are nested;
The prober according to any one of claims 1 to 5 . The measurement unit includes a test head, a probe card having a probe, and a wafer chuck for holding a wafer.
The prober according to any one of claims 1 to 6 . An alignment apparatus for performing relative alignment between the wafer held by the wafer chuck and the probe;
The alignment device is provided for each stage, and is configured to be movable between a plurality of measurement units arranged in the same stage.
The prober according to claim 7 .

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