WO2022111519A1 - Carrying device of semiconductor heat treatment apparatus, and semiconductor heat treatment apparatus - Google Patents

Carrying device of semiconductor heat treatment apparatus, and semiconductor heat treatment apparatus Download PDF

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Publication number
WO2022111519A1
WO2022111519A1 PCT/CN2021/132757 CN2021132757W WO2022111519A1 WO 2022111519 A1 WO2022111519 A1 WO 2022111519A1 CN 2021132757 W CN2021132757 W CN 2021132757W WO 2022111519 A1 WO2022111519 A1 WO 2022111519A1
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WO
WIPO (PCT)
Prior art keywords
temperature measuring
heat treatment
fixing
semiconductor heat
temperature
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Application number
PCT/CN2021/132757
Other languages
French (fr)
Chinese (zh)
Inventor
韩子迦
姚晶
杨帅
闫士泉
Original Assignee
北京北方华创微电子装备有限公司
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Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020237017154A priority Critical patent/KR20230091979A/en
Priority to JP2023529037A priority patent/JP2023549871A/en
Publication of WO2022111519A1 publication Critical patent/WO2022111519A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

Definitions

  • the present invention relates to the technical field of semiconductor equipment, and in particular, to a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment.
  • the temperature uniformity in the process chamber has an important impact on the yield of multiple wafers placed at intervals in the process chamber. Therefore, how to accurately detect the temperature of each wafer is extremely important for the semiconductor process. .
  • the semiconductor vertical furnace equipment includes a loading and unloading chamber 11 and a process chamber 12 located above the loading and unloading chamber 11, wherein a quartz tube 121 is arranged in the process chamber 12; it is used for carrying a plurality of wafers
  • the wafer boat 13 can be raised and lowered, so that it can be lowered into the loading and unloading chamber 11 when loading and unloading wafers, and the wafers are carried up to the quartz tube 121 during the process; the wafer boat 13 can carry a plurality of wafers, and many The wafers are placed in the wafer boat 13 at intervals in the vertical direction.
  • a temperature measuring device 14 is installed in the quartz tube 121.
  • the interior of the quartz tube 121 is vertically divided into a plurality of temperature measuring areas.
  • the temperature measuring device 14 is provided with a temperature measuring thermocouple corresponding to each temperature measuring area. It is used to measure the temperature of each temperature measurement area in a one-to-one correspondence.
  • the temperature measuring device 14 can only be installed at the edge of the quartz tube 121 outside the wafer boat 13, which makes the temperature measuring device 14 far away from the wafer, resulting in the measurement of There will be a large error between the temperature measured by the temperature device 14 and the actual temperature of the wafer.
  • thermoelectric The couple (TC Wafer) is placed in the wafer boat 13, and the semiconductor process is simulated, and the temperature measured by the wafer thermocouple is regarded as the actual temperature of the wafer, and compared with the temperature measured by the temperature measuring device 14 to obtain a temperature measurement.
  • the above temperature measurement method requires the temperature measurement device 14 to be used in conjunction with the wafer thermocouple, resulting in high cost, and the obtained error sample is small and the accuracy is low, which is only for reference and cannot accurately measure the temperature measurement device 14 The measured temperature is compensated, resulting in a low yield of wafers.
  • the internal environment of the quartz tube 121 will change after a long time of use. For example, after multiple deposition processes, deposition will occur on the inner wall of the quartz tube 121 Process by-products, and changes in the internal environment of the quartz tube 121 will affect the error. At this time, it is necessary to stop and correct the semiconductor vertical furnace equipment, and re-measure the error, resulting in a low utilization rate of the semiconductor vertical furnace equipment.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment, which can improve the accuracy of temperature measurement of wafers, so that there is no need for other temperature measurement
  • the components are used together to improve the yield of wafers, reduce costs, and increase the utilization rate of semiconductor heat treatment equipment.
  • a carrier device for a semiconductor heat treatment equipment which includes a carrier body, the carrier body includes a plurality of carrier positions for carrying wafers, and the plurality of the carrier positions are along the direction of the carrier body. Axially arranged at intervals, and also includes a temperature measurement device, the temperature measurement device includes a support member and a plurality of temperature measurement components, wherein the support member is connected with the bearing body, and is located on the bearing body of the bearing body. the outside of the edge of the bit;
  • a plurality of the temperature measuring components are arranged on the support member and are arranged at intervals along the axial direction of the bearing body, and each of the temperature measuring components has a measuring device extending to the inner side of the edge of the bearing position.
  • the temperature end is used to detect the temperature of the partition corresponding to the temperature measurement end.
  • the temperature measuring end and the center of the bearing position are disposed opposite to each other in the axial direction of the bearing body.
  • the temperature measurement assembly includes an extension part and a temperature measurement part, wherein one end of the extension part is connected to the support, and the other end extends to the inner edge of the bearing position as the temperature measurement end;
  • the temperature measuring component is arranged in the extending component and is located at the temperature measuring end, and the wiring of the temperature measuring component is led out through the extending component and the support in sequence.
  • the temperature measuring component includes a thermocouple
  • the thermocouple includes a first electrode, a second electrode, a first connector, a second connector, a first conductive member, a second conductive member, and an insulating member, wherein , the first electrode and the second electrode are arranged in the extension part at intervals and are located at the temperature measuring end; the first connection piece and the second connection piece are arranged at intervals in the extension part
  • the first conductive member and the second conductive member are arranged in the support member at intervals; the first electrode is electrically connected to the first conductive member through the first connection member, and the second conductive member is electrically connected to the first conductive member.
  • the electrode is electrically connected to the second conductive member through the second connecting member;
  • the insulating part is arranged in the extension part and the support part, and is used for the connection between the first conductive part and the second conductive part and between the first connection part and the second connection part. Electrical insulation between them.
  • the insulating component includes an insulating sleeve, and the insulating sleeve is provided with a first channel and a second channel that are electrically insulated from each other, wherein the first channel is used for the first conductive member and the The first connecting piece passes through, and the second channel is used for the second conductive piece and the second connecting piece to pass through.
  • a limiting member is provided on the supporting member, and the limiting member cooperates with the carrying body for restricting the rotation of the supporting member relative to the carrying body.
  • the limiting member is provided on the support member, a limiting groove is formed on the carrying body, the limiting member is arranged in the limiting groove, and the outer peripheral surface of the limiting member is It is matched with the inner peripheral surface of the limiting groove to limit the rotation of the limiting member relative to the limiting groove.
  • a fixing structure is provided on the support member, a fixing portion is provided on the bearing body, and the bearing device further includes a fixing component for detachably connecting the fixing structure and the fixing portion.
  • the fixing structure includes a boss provided on the support member, a fixing hole for the boss to pass through is opened in the fixing portion, and an external thread is provided on the outer peripheral wall of the fixing portion ;
  • the fixing assembly includes a fixing member, a first elastic member, a second elastic member, a pressing member and an elastic sealing member, wherein,
  • a fixing groove is opened in the fixing member, an inner thread matched with the outer thread is arranged on the inner peripheral wall of the fixing groove, the first elastic member, the second elastic member, the pressing member and the
  • the elastic seals are sequentially stacked in the fixing grooves from bottom to top, and are all sleeved on the support, and the elastic seals are located between the pressing piece and the fixing part and extend into the fixing part. between one end of the fixing groove.
  • the present invention also provides a semiconductor heat treatment equipment, comprising a loading chamber, a process chamber and the carrying device provided by the present invention, wherein the loading chamber and the process chamber are communicated with each other, and the carrying device can Move between the load chamber and the process chamber.
  • a plurality of temperature measuring components are arranged on the support member and are arranged at intervals along the axial direction of the bearing body, and each temperature measuring component has a temperature measuring component extending to the inner side of the edge of the bearing position.
  • the temperature measuring end is used to detect the temperature of the partition corresponding to the temperature measuring end. Since the above temperature measuring end extends to the inside of the edge of the bearing position, this can reduce the load carried by the temperature measuring end and each bearing position in the corresponding partition.
  • the distance between the wafers can be reduced or even eliminated, so as to reduce or even eliminate the error between the temperature measurement value of each temperature measurement component and the actual temperature of the wafer, so as to improve the accuracy of wafer temperature measurement, so that each temperature measurement can be
  • the temperature measurement value of the component can characterize the actual temperature of the wafer, so it does not need to be used in conjunction with other temperature measuring components, so as to improve the yield of the wafer, reduce the cost, and improve the utilization rate of semiconductor heat treatment equipment.
  • the temperature measuring device can be moved with the movement of the bearing body, avoiding the temperature measuring components on the support
  • the movement of the carrier body causes interference, so that the normal transport of the carrier device in the semiconductor thermal processing apparatus can be ensured.
  • the semiconductor heat treatment equipment provided by the present invention can improve the accuracy of temperature measurement of wafers with the aid of the above-mentioned carrier device provided by the present invention, so that it is not necessary to cooperate with other temperature measurement components, so as to improve the yield of wafers, reduce costs, and improve the Utilization of semiconductor thermal processing equipment.
  • the interference of the temperature measuring components on the support to the movement of the carrying body can be avoided, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.
  • Fig. 1 is the structural representation of existing semiconductor vertical furnace equipment and crystal boat
  • FIG. 2 is a schematic structural diagram of a carrier device of a semiconductor heat treatment equipment provided by an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of the semiconductor heat treatment equipment provided in an embodiment of the present invention when the carrier device is located in a process chamber;
  • FIG. 4 is a schematic structural diagram of the semiconductor heat treatment equipment provided in an embodiment of the present invention when the carrier device is located in a loading chamber;
  • FIG. 5 is a schematic structural diagram of a temperature measuring device in a bearing device of a semiconductor heat treatment equipment provided by an embodiment of the present invention
  • Fig. 6 is the partial enlarged structure schematic diagram of A place in Fig. 5;
  • FIG. 7 is a schematic structural diagram of a temperature measuring device in a bearing device of a semiconductor heat treatment equipment provided by an embodiment of the present invention.
  • Fig. 8 is a partial enlarged structural schematic diagram at B in Fig. 7;
  • FIG. 9 is a schematic structural diagram of the supporting device of the semiconductor heat treatment equipment provided by the embodiment of the present invention when the limiting member cooperates with the flange;
  • FIG. 10 is a schematic structural diagram of a carrier device of a semiconductor heat treatment equipment provided by an embodiment of the present invention.
  • FIG. 11 is a schematic view of a partially enlarged structure at C in FIG. 10;
  • 11-Loading and unloading chamber 12-Process chamber; 121-Quartz tube; 13-Crystal boat; 14-Temperature measuring device; 201-Loading chamber; 202-Process chamber; 203-Process tube; 204-Lifting device; 21-bearing body; 211-bearing area; 22-supporting member; 23-temperature measuring assembly; 231-extension member; 232-temperature measuring member; 241-first conducting member; 242-second conducting member; 244-Second connector; 25-Insulation part; 26-Limiting part; 271-Fixing part; 272-Fixing hole; 273-External thread; 28-Fixing component; 281-Fixing part; 282-Fixing groove 283 - the first elastic part; 284 - the second elastic part; 285 - pressing part; 286 - elastic sealing part; 29 - boss; 30 - flange;
  • this embodiment provides a carrier device for semiconductor heat treatment equipment, including a temperature measurement device and a carrier body 21 , wherein the carrier body 21 includes a plurality of carrier positions for carrying the wafers 32 , and a plurality of The bearing positions are arranged at intervals along the axial direction of the bearing body.
  • the carrier body 21 is provided with multi-layer slots spaced along its axial direction, each layer of the slot can be inserted with a wafer 32, and the position of the slot for placing the wafer 32 is the above-mentioned carrier bit.
  • the temperature measurement device includes a support member 22 and a plurality of temperature measurement components 23 , wherein the support member 22 is connected to the bearing body 21 and is located outside the above-mentioned bearing position of the bearing body 21 .
  • the above-mentioned support member 22 is, for example, a columnar shape, and is arranged to extend along the axial direction of the carrying body 21 .
  • a plurality of temperature measuring components 23 are arranged on the support 22, and are arranged at intervals along the axial direction of the bearing body 21, and each temperature measuring component 23 has a temperature measuring end extending to the inner side of the edge of the bearing position. For detecting the temperature of the zone corresponding to the temperature measuring end.
  • the entire area of the carrier body 21 for accommodating all the wafers 32 is divided into a plurality of partitions 211 in the axial direction of the carrier body 21 .
  • the number of the partitions 211 is the same as the number of the temperature measuring components 23 , and each temperature measuring component
  • the temperature-measuring ends of 23 extend to each sub-area 211 in a one-to-one correspondence, so as to detect the temperature of the sub-area 211 .
  • the above-mentioned entire area is equally divided into 5 partitions 211 , correspondingly, there are 5 temperature measuring components 23 , and the temperature measuring ends of each temperature measuring component 23 extend to each partition 211 in a one-to-one correspondence.
  • each temperature measurement component 23 is located above the uppermost wafer 32 in the corresponding partition 211, but the present invention is not limited to this, in practical applications, each temperature measurement component The temperature measuring end of 23 may also be located above or below any layer of wafers 32 in the corresponding partition, which is not particularly limited in the present invention.
  • the number of wafers 32 in each partition 211 may be one or more, which is not particularly limited in the present invention.
  • the temperature of the corresponding partition 211 detected by the temperature measuring component 23 can be used to characterize the actual temperature of the wafer 32 in the partition 211 .
  • the number of partitions 211 is the same as the number of temperature measuring components 23, however, the present invention is not limited to this, and in practical applications, one temperature measuring component 23 may also correspond to multiple partitions 211, and the number of partitions 211 corresponding to different temperature measuring components 23 may be the same or different.
  • a plurality of temperature measuring components 23 are arranged on the support member 22 and are arranged at intervals along the axial direction of the bearing body 21 .
  • the temperature measuring end inside the edge of the position is used to detect the temperature of the partition 211 corresponding to the temperature measuring end. Since the above temperature measuring end extends to the inside of the edge of the bearing position, this can reduce the temperature measuring end and the corresponding partition.
  • the distance between the wafers carried by each bearing position in 211 can reduce or even eliminate the error between the temperature measurement value of each temperature measuring component 23 and the actual temperature of the wafer 32, thereby improving the temperature measurement of the wafer.
  • each temperature measuring component 23 can represent the actual temperature of the wafer, so that it does not need to be used in conjunction with other temperature measuring components, so as to improve the yield of the wafer, reduce the cost, and improve the use of semiconductor heat treatment equipment. Rate.
  • the temperature measuring device 23 can move with the movement of the bearing body 21, avoiding the support 22
  • Each temperature measuring component 23 on the upper body interferes with the movement of the carrying body 21, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.
  • the above-mentioned carrying device provided in this embodiment can be applied to, for example, semiconductor vertical furnace equipment.
  • the axial direction of the above-mentioned carrying body 21 is the vertical direction, but the structure of the carrying device is not limited to this.
  • it can also be applied to a semiconductor horizontal furnace equipment, that is, the axial direction and the horizontal plane of the above-mentioned carrier body 21 are parallel to each other.
  • the temperature measuring end of each temperature measuring component 23 extends to the inside of the edge of the bearing position of the bearing body 21 , and can extend to the end of each partition 211 correspondingly one by one. one side (e.g. left or right).
  • the semiconductor vertical furnace equipment may be provided with a loading chamber 201 and a process chamber 202 that communicate with each other, wherein the loading chamber 201 Located below the process chamber 202, the above-mentioned carrier device provided in this embodiment can load and unload the wafer 32 in the loading chamber 201.
  • the loading chamber 201 can be provided with a lifting device 204, which is used to drive the carrier device to rise as a whole. into process chamber 202 , or down into load chamber 201 .
  • the process chamber 202 may be provided with a process tube 203.
  • the manufacturing material of the process tube 203 may be quartz, and the above-mentioned carrying device may ascend into the process chamber 202 and enter the inner space of the process tube 203.
  • the temperature measuring device by connecting the support 22 of the temperature measuring device with the carrying body 21, the temperature measuring device can rise and fall with the lifting and lowering of the carrying body 21, that is, the temperature measuring device can rise with the carrying body 21 to In the process chamber 202, or descend into the loading chamber 201, so as to avoid the interference of the temperature measuring components 23 on the support 22 to the movement of the carrier body 21, so as to ensure the normal transmission of the carrier device in the semiconductor heat treatment equipment.
  • the structure of the semiconductor vertical furnace equipment is not limited thereto, for example, the loading chamber 201 may also be located above the process chamber 202 .
  • the type of semiconductor heat treatment equipment is not limited to semiconductor vertical furnace equipment.
  • semiconductor heat treatment equipment can also be semiconductor horizontal furnace equipment, and the semiconductor horizontal furnace equipment can also be provided with interconnected loading chambers 201 and processes.
  • Chamber 202 at this time, the loading chamber 201 can be located on the right side of the process chamber 202, or can be located on the left side of the process chamber 202, the loading chamber 201 can be provided with a transmission device, by placing the carrying device on the transmission On the device, the carrying device is driven to move left or right into the process chamber 202 by means of the transmission device.
  • the temperature device can translate left and right along with the left and right translation of the carrying body 21, so as to avoid the interference of the temperature measuring components 23 on the support 22 to the movement of the carrying body 21, so as to ensure the normal transmission of the carrying device in the semiconductor heat treatment equipment.
  • the temperature measuring assembly 23 may include an extension part 231 and a temperature measurement part 232 , wherein one end of the extension part 231 is connected to the support 22 , and the other end serves as the above-mentioned
  • the temperature measurement end extends to the inside of the edge of the above-mentioned bearing position; the temperature measurement part 232 is arranged in the extension part 231 and is located at the above temperature measurement end, and the wiring of the temperature measurement part 232 (used as a signal transmission part) passes through the extension part 231 in turn
  • the support member 22 is drawn out so as to be able to extend to the outside of the process chamber 202 .
  • the above-mentioned extension member 231 is used to support and protect the temperature measurement member 232 disposed therein, and at the same time, the temperature measurement member 232 can be located in a region closer to the center of the wafer 32 .
  • the support member 22 and the extension member 231 may both be hollow structures, and the inner space of the extension member 231 is communicated with the inner space of the support member 22 , and the temperature measurement member 232 is disposed on the extension member.
  • the wiring of the temperature measuring member 232 is led out through the inner space of the extension member 231 and the inner space of the support member 22 in sequence.
  • the wiring of the temperature measuring component 232 is used as a signal transmission component to transmit the electrical signal generated by the temperature measuring component 232 when detecting the temperature to an external receiving and processing component (not shown in the figure), and the receiving and processing component is used for the temperature measuring component.
  • 232 processes the electrical signal generated when the temperature is detected, so as to display the temperature measured by each temperature measuring component 232 .
  • the material for making the extension part 231 may include quartz.
  • each temperature measuring component 232 may be disposed opposite to the center of the bearing position in the axial direction of the bearing body 21. In this way, the temperature measuring end of each temperature measuring component 232 can be positioned relative to the center of the wafer placed on the bearing position, so that the temperature detection value measured by each temperature measuring component 232 can be closer to the center temperature of the wafer 32 , thereby further improving the accuracy of temperature measurement of the wafer 32 .
  • the temperature measuring component 232 may include a thermocouple, and the thermocouple may include a first electrode, a second electrode, a first connector 243, a second connector 244, a first The conductive member 241, the second conductive member 242 and the insulating member 25, wherein the first electrode and the second electrode are arranged in the extension member 231 at intervals, and are located at the temperature measuring end; the first connecting member 243 and the second connecting member 244 The first conductive member 241 and the second conductive member 242 are arranged in the support member 22 at intervals; the first electrode is electrically connected to the first conductive member 241 through the first connecting member 243, and the second electrode is It is electrically connected to the second conductive member 242 through the second connecting member 244 .
  • the first connecting member 243 , the second connecting member 244 , the first conducting member 241 and the second conducting member 242 are the wiring of the temperature measuring component 232 for signal transmission.
  • the insulating part 25 is disposed in the extending part 231 and the supporting part 22 for electrically insulating between the first conductive part 241 and the second conductive part 242 and between the first connection part 243 and the second connection part 244 .
  • the first electrode and the second electrode are electrically connected, and the first conductive member 241 and the second conductive member 242 are electrically connected in the external receiving processing component.
  • An electromotive force is generated in the circuit where the electrode and the second electrode are located, and the receiving and processing component can receive the electromotive force and process the electromotive force, so that the temperature measured by each temperature measuring component 232 can be displayed.
  • the electrical insulation between the first conductive member 241 and the second conductive member 242 and between the first connecting member 243 and the second connecting member 244 can be avoided, so that the above-mentioned first electrode and the second electrode are located.
  • the loop is electrically conducted at other positions except the above-mentioned two conducting places, so that the accuracy of the electromotive force generated on the loop can be ensured, thereby improving the temperature measuring accuracy of the temperature measuring device.
  • the fabrication material of the first electrode and the fabrication material of the second electrode may include noble metals.
  • the material for making the first electrode may be platinum-rhodium alloy, and the material for making the second electrode may be platinum.
  • the proportion of rhodium in the platinum-rhodium alloy may be in the range of 10%-13%, and the proportion of platinum may be in the range of 90%-87%.
  • the proportion of rhodium in the platinum-rhodium alloy may be 13%, and the proportion of platinum may be 87%.
  • the fabrication material of the first connecting member 243 may include precious metal.
  • the first connecting member 243 may be made of platinum-rhodium alloy.
  • the fabrication material of the second connecting member 244 may include precious metal.
  • the second connecting member 244 may be made of platinum-rhodium alloy.
  • the fabrication material of the first conductive member 241 may include noble metal.
  • the first conductive member 241 can be made of platinum-rhodium alloy.
  • the fabrication material of the second conductive member 242 may include noble metal.
  • the second conductive member 242 can be made of platinum-rhodium alloy.
  • the first connecting member 243 may be made of the same material as the first conductive member 241
  • the second connecting member 244 and the second conductive member 242 may be made of the same material.
  • the insulating component 25 may include an insulating sleeve, and the insulating sleeve is provided with a first channel and a second channel that are electrically insulated from each other, wherein the first channel is used for supplying The first conductive member 241 and the first connection member 243 pass through, and the second channel is used for the second conductive member 242 and the second connection member 244 to pass through.
  • first channel is used for supplying The first conductive member 241 and the first connection member 243 pass through
  • the second channel is used for the second conductive member 242 and the second connection member 244 to pass through.
  • a limiting member 26 is provided on the support member 22 , and the limiting member 26 cooperates with the bearing body 21 to limit the rotation of the support member 22 relative to the bearing body 21 . In this way, the relative position of the temperature measuring member 232 on the support member 22 and the bearing position can be prevented from changing, thereby improving the temperature measurement stability of the temperature measuring device.
  • the limiting member 26 can be disposed on the support member 22 .
  • the limiting member 26 has a through hole that can be sleeved on the support member 22 .
  • a limiting groove is defined on the carrying body 21, and the limiting member 26 is arranged in the limiting groove, and the outer peripheral surface of the limiting member 26 cooperates with the inner circumferential surface of the limiting groove to limit the limiting member 26 relative to the limiting groove. Rotation, thereby restricting the rotation of the support member 22 relative to the carrying body 21 .
  • a flange 30 may be provided at the bottom of the carrying body 21 , and the above-mentioned limiting groove may be opened on the edge of the flange 30 .
  • a heat preservation device 31 may be provided on the flange 30 to keep the wafers 32 carried on the carrier body 21 warm during the semiconductor heat treatment process, so as to avoid the wafers 32 carried on the carrier body 21 .
  • Wafer 32 rapidly dissipates heat during semiconductor thermal processing.
  • the height of the limiting member 26 may be 8 mm to 10 mm.
  • the length of the limiting member 26 may be 12 mm to 16 mm.
  • the width of the limiting member 26 may be 12 mm to 16 mm.
  • the supporting member 22 may be provided with a fixing structure, and the bearing body 21 may be provided with a fixing portion 271 .
  • the bearing device may further include a fixing component 28 , for detachably connecting the fixing structure and the fixing portion 271 , so as to detachably fix the support member 22 on the carrying body 21 .
  • the fixing assembly 28 the fixing structure and the fixing portion 271 are detachably connected, so that the supporting member 22 is detachably fixed on the bearing body 21 , so that the maintenance or replacement of the temperature measuring device can be facilitated.
  • the fixing structure may include a boss 29 provided on the support member 22 , and a fixing hole 272 may be opened in the fixing portion 271 for the boss 29 to pass through.
  • the outer peripheral wall of 271 is provided with an external thread 273, and the fixing assembly 28 may include a fixing member 281, a first elastic member 283, a second elastic member 284, a pressing member 285 and an elastic sealing member 286, wherein the fixing member 281 is provided with a The fixing groove 282, the inner peripheral wall of the fixing groove 282 is provided with an inner thread that cooperates with the outer thread 273, and the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are stacked in sequence from bottom to top In the fixing groove 282 , and both are sleeved on the support member 22 , the elastic sealing member 286 is located between the pressing member 285 and the end of the fixing portion 271 extending into the fixing groove 282 .
  • the fixing part 271 can be arranged on the flange 30 at the bottom of the carrying body 21 , the fixing part 271 extends downward along the flange 30 , and a fixing hole for the boss 29 to pass through is opened therein.
  • an outer thread 273 is provided on its outer peripheral wall, and the inner thread on the inner peripheral wall of the fixing groove 282 is threaded with the outer thread 273 on the outer peripheral wall of the fixing part 271, so that the fixing part 281 can be detachably connected with the fixing part 271,
  • the first elastic member 283 is disposed at the bottom of the fixing groove 282 and is sleeved on the support member 22, the second elastic member 284 is stacked on the first elastic member 283 and sleeved on the support member 22, and the pressing member 285 Stacked on the second elastic member 284 and sleeved on the support member 22, the elastic sealing member 286 is stacked on the pressing member 285 and sleeved on the support member 22, and is located between the pressing member 285 and the fixing part 271 is inserted between one end of the fixing groove 282, and the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are pressed and fixed by the screw fitting of the fixing member 281 and the fixing
  • the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are all sleeved on the support member 22, so as to pass the first elastic member 283, the second elastic member 284 , the pressing member 285 and the elastic sealing member 286 clamp the supporting member 22 therein, so as to detachably fix the supporting member 22 on the carrying body 21, and prevent the supporting member 22 from shaking relative to the fixing hole 272 and the fixing groove 282,
  • the relative position of the temperature measuring component 232 disposed on the support 22 and the bearing position is prevented from changing, thereby improving the temperature measurement stability of the temperature measuring device.
  • elastomeric seal 286 may include an O-ring.
  • the material for making the first elastic member 283 may include polytetrafluoroethylene (Poly tetra fluoroethylene, PTFE for short).
  • the material for making the second elastic member 284 may include polytetrafluoroethylene.
  • the manufacturing material of the pressing member 285 may include stainless steel.
  • an embodiment of the present invention further provides a semiconductor heat treatment equipment, which includes a loading chamber 201, a process chamber 202, and the carrying device provided by the embodiment of the present invention, wherein, The loading chamber 201 and the process chamber 202 communicate with each other, and the carrier device can move between the loading chamber 201 and the process chamber 202 .
  • the semiconductor heat treatment equipment provided by the embodiments of the present invention can improve the accuracy of wafer temperature measurement by means of the above-mentioned carrier device provided by the embodiments of the present invention, so that it is Round the yield rate, reduce costs, and improve the utilization rate of semiconductor heat treatment equipment.
  • the interference of the temperature measuring components on the support to the movement of the carrying body can be avoided, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.

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Abstract

The present invention provides a carrying device of a semiconductor heat treatment apparatus, and a semiconductor heat treatment apparatus. The carrying device comprises a carrying body, the carrying body comprises a plurality of carrying positions for carrying wafers, and the plurality of carrying positions are spaced apart from each other along the axial direction of the carrying body. The carrying device further comprises a temperature measuring device, and the temperature measuring device comprises a support member and a plurality of temperature measuring assemblies, wherein the support member is connected to the carrying body and located on the outer side of the edges of the carrying positions of the carrying body; the plurality of temperature measuring assemblies are all arranged on the support member and spaced apart from each other along the axial direction of the carrying body, and each temperature measuring assembly has a temperature measuring end extending to the inner side of the edge of the corresponding carrying position, so as to measure the temperature of an area corresponding to the temperature measuring end. According to the carrying device of a semiconductor heat treatment apparatus, and the semiconductor heat treatment apparatus provided in the present invention, the accuracy of temperature measuring for a wafer can be improved.

Description

半导体热处理设备的承载装置及半导体热处理设备Carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment 技术领域technical field
本发明涉及半导体设备技术领域，具体地，涉及一种半导体热处理设备的承载装置及半导体热处理设备。The present invention relates to the technical field of semiconductor equipment, and in particular, to a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment.
背景技术Background technique
在半导体热处理设备中，工艺腔室内的温度均匀性，对于间隔放置在工艺腔室内的多个晶圆的良品率具有重要影响，因此，如何能够准确检测各晶圆的温度，对于半导体工艺极为重要。In semiconductor heat treatment equipment, the temperature uniformity in the process chamber has an important impact on the yield of multiple wafers placed at intervals in the process chamber. Therefore, how to accurately detect the temperature of each wafer is extremely important for the semiconductor process. .
如图1所示，半导体立式炉设备包括装卸腔室11和位于该装卸腔室11上方的工艺腔室12，其中，工艺腔室12内设置有石英管121；用于承载多个晶圆的晶舟13是可升降的，以能够在装卸晶圆时下降至装卸腔室11中，在进行工艺时承载晶圆上升至石英管121中；晶舟13能够承载多个晶圆，且多个晶圆在竖直方向上间隔放置于晶舟13中。石英管121内安装有测温装置14，石英管121内部在竖直方向上划分为多个测温区域，测温装置14上对应各个测温区域设置有测温热偶，各测温热偶用于一一对应地对各测温区域进行测温。为了避免测温装置14对晶舟13的升降产生干涉，测温装置14只能安装在石英管121内位于晶舟13外侧的边缘位置，这使得测温装置14距离晶圆较远，导致测温装置14测得的温度与晶圆的实际温度之间会有较大误差，为此，在半导体立式炉设备正式使用之前，还需要将能够测温且形状与晶圆类似的晶圆热电偶(TC Wafer)放置于晶舟13中，并模拟半导体工艺，并将晶圆热电偶测得的温度视为晶圆实际温度，与测温装置14测得的温度进行比较，以获得测温装置14测得的温度与晶圆的实际温度之间的误差，从而在半导体立式炉设备正式使用之后，通过获得的误差对测温装置14测得的温 度进行补偿，以获得晶圆的实际温度。As shown in FIG. 1, the semiconductor vertical furnace equipment includes a loading and unloading chamber 11 and a process chamber 12 located above the loading and unloading chamber 11, wherein a quartz tube 121 is arranged in the process chamber 12; it is used for carrying a plurality of wafers The wafer boat 13 can be raised and lowered, so that it can be lowered into the loading and unloading chamber 11 when loading and unloading wafers, and the wafers are carried up to the quartz tube 121 during the process; the wafer boat 13 can carry a plurality of wafers, and many The wafers are placed in the wafer boat 13 at intervals in the vertical direction. A temperature measuring device 14 is installed in the quartz tube 121. The interior of the quartz tube 121 is vertically divided into a plurality of temperature measuring areas. The temperature measuring device 14 is provided with a temperature measuring thermocouple corresponding to each temperature measuring area. It is used to measure the temperature of each temperature measurement area in a one-to-one correspondence. In order to prevent the temperature measuring device 14 from interfering with the lifting and lowering of the wafer boat 13, the temperature measuring device 14 can only be installed at the edge of the quartz tube 121 outside the wafer boat 13, which makes the temperature measuring device 14 far away from the wafer, resulting in the measurement of There will be a large error between the temperature measured by the temperature device 14 and the actual temperature of the wafer. For this reason, before the semiconductor vertical furnace equipment is officially used, it is also necessary to measure the temperature of the wafer and the shape of the wafer is similar to the wafer thermoelectric The couple (TC Wafer) is placed in the wafer boat 13, and the semiconductor process is simulated, and the temperature measured by the wafer thermocouple is regarded as the actual temperature of the wafer, and compared with the temperature measured by the temperature measuring device 14 to obtain a temperature measurement. The error between the temperature measured by the device 14 and the actual temperature of the wafer, so that after the semiconductor vertical furnace equipment is officially used, the temperature measured by the temperature measuring device 14 is compensated by the obtained error to obtain the actual temperature of the wafer. temperature.
但是，上述测温方式需要测温装置14与晶圆热电偶配合使用，导致成本较高，并且获得的误差样本较小，准确性较低，仅具有参考意义，无法准确地对测温装置14测得的温度进行补偿，导致晶圆的良品率较低，另外，石英管121在长时间使用后，其内部环境会发生变化，例如经过多次沉积工艺后，石英管121的内壁上会沉积工艺副产物，而石英管121内环境的变化又会对误差产生影响，此时就需要对半导体立式炉设备停产校正，重新测算误差，导致半导体立式炉设备使用率低。However, the above temperature measurement method requires the temperature measurement device 14 to be used in conjunction with the wafer thermocouple, resulting in high cost, and the obtained error sample is small and the accuracy is low, which is only for reference and cannot accurately measure the temperature measurement device 14 The measured temperature is compensated, resulting in a low yield of wafers. In addition, the internal environment of the quartz tube 121 will change after a long time of use. For example, after multiple deposition processes, deposition will occur on the inner wall of the quartz tube 121 Process by-products, and changes in the internal environment of the quartz tube 121 will affect the error. At this time, it is necessary to stop and correct the semiconductor vertical furnace equipment, and re-measure the error, resulting in a low utilization rate of the semiconductor vertical furnace equipment.
发明内容SUMMARY OF THE INVENTION
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种半导体热处理设备的承载装置及半导体热处理设备，其能够提高对晶圆测温的准确性，从而无需与其它测温元件配合使用，以提高晶圆的良品率，降低成本，提高半导体热处理设备的使用率。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a carrier device for semiconductor heat treatment equipment and semiconductor heat treatment equipment, which can improve the accuracy of temperature measurement of wafers, so that there is no need for other temperature measurement The components are used together to improve the yield of wafers, reduce costs, and increase the utilization rate of semiconductor heat treatment equipment.
为实现本发明的目的而提供一种半导体热处理设备的承载装置，包括承载主体，所述承载主体包括多个用于承载晶圆的承载位，且多个所述承载位沿所述承载主体的轴向间隔排布，还包括测温装置，所述测温装置包括支撑件和多个测温组件，其中，所述支撑件与所述承载主体连接，且位于所述承载主体的所述承载位的边缘外侧；In order to achieve the purpose of the present invention, a carrier device for a semiconductor heat treatment equipment is provided, which includes a carrier body, the carrier body includes a plurality of carrier positions for carrying wafers, and the plurality of the carrier positions are along the direction of the carrier body. Axially arranged at intervals, and also includes a temperature measurement device, the temperature measurement device includes a support member and a plurality of temperature measurement components, wherein the support member is connected with the bearing body, and is located on the bearing body of the bearing body. the outside of the edge of the bit;
多个所述测温组件均设置在所述支撑件上，且沿所述承载主体的轴向间隔排布，并且每个所述测温组件均具有延伸至所述承载位的边缘内侧的测温端，用于对与该测温端对应的分区的温度进行检测。A plurality of the temperature measuring components are arranged on the support member and are arranged at intervals along the axial direction of the bearing body, and each of the temperature measuring components has a measuring device extending to the inner side of the edge of the bearing position. The temperature end is used to detect the temperature of the partition corresponding to the temperature measurement end.
可选的，所述测温端与所述承载位的中心在所述承载主体的轴向上相对设置。Optionally, the temperature measuring end and the center of the bearing position are disposed opposite to each other in the axial direction of the bearing body.
可选的，所述测温组件包括延伸部件和测温部件，其中，所述延伸部件 的一端与所述支撑件连接，另一端作为所述测温端延伸至所述承载位的边缘内侧；Optionally, the temperature measurement assembly includes an extension part and a temperature measurement part, wherein one end of the extension part is connected to the support, and the other end extends to the inner edge of the bearing position as the temperature measurement end;
所述测温部件设置在所述延伸部件内，且位于所述测温端处，并且所述测温部件的接线依次通过所述延伸部件和所述支撑件引出。The temperature measuring component is arranged in the extending component and is located at the temperature measuring end, and the wiring of the temperature measuring component is led out through the extending component and the support in sequence.
可选的，所述测温部件包括热电偶，所述热电偶包括第一电极、第二电极、第一连接件、第二连接件、第一导电件、第二导电件和绝缘部件，其中，所述第一电极和所述第二电极间隔设置在所述延伸部件内，且位于所述测温端处；所述第一连接件和所述第二连接件间隔设置在所述延伸部件内；所述第一导电件和所述第二导电件间隔设置在所述支撑件内；所述第一电极通过所述第一连接件与所述第一导电件电连接，所述第二电极通过所述第二连接件与所述第二导电件电连接；Optionally, the temperature measuring component includes a thermocouple, and the thermocouple includes a first electrode, a second electrode, a first connector, a second connector, a first conductive member, a second conductive member, and an insulating member, wherein , the first electrode and the second electrode are arranged in the extension part at intervals and are located at the temperature measuring end; the first connection piece and the second connection piece are arranged at intervals in the extension part The first conductive member and the second conductive member are arranged in the support member at intervals; the first electrode is electrically connected to the first conductive member through the first connection member, and the second conductive member is electrically connected to the first conductive member. The electrode is electrically connected to the second conductive member through the second connecting member;
所述绝缘部件设置在所述延伸部件和所述支撑件内，用于对所述第一导电件和所述第二导电件之间、所述第一连接件和所述第二连接件之间进行电绝缘。The insulating part is arranged in the extension part and the support part, and is used for the connection between the first conductive part and the second conductive part and between the first connection part and the second connection part. Electrical insulation between them.
可选的，所述绝缘部件包括绝缘套管，所述绝缘套管内设置有相互电绝缘的第一通道和第二通道，其中，所述第一通道用于供所述第一导电件和所述第一连接件穿过，所述第二通道用于供所述第二导电件和所述第二连接件穿过。Optionally, the insulating component includes an insulating sleeve, and the insulating sleeve is provided with a first channel and a second channel that are electrically insulated from each other, wherein the first channel is used for the first conductive member and the The first connecting piece passes through, and the second channel is used for the second conductive piece and the second connecting piece to pass through.
可选的，所述支撑件上设置有限位部件，所述限位部件与所述承载主体相配合，用于限制所述支撑件相对于所述承载主体转动。Optionally, a limiting member is provided on the supporting member, and the limiting member cooperates with the carrying body for restricting the rotation of the supporting member relative to the carrying body.
可选的，所述限位部件设置在所述支撑件上，所述承载主体上开设有限位槽，所述限位部件设置在所述限位槽中，且所述限位部件的外周面与所述限位槽的内周面相配合，以限制所述限位部件相对于所述限位槽转动。Optionally, the limiting member is provided on the support member, a limiting groove is formed on the carrying body, the limiting member is arranged in the limiting groove, and the outer peripheral surface of the limiting member is It is matched with the inner peripheral surface of the limiting groove to limit the rotation of the limiting member relative to the limiting groove.
可选的，所述支撑件上设置有固定结构，所述承载主体上设置有固定部，所述承载装置还包括固定组件，用于可拆卸地连接所述固定结构与所述固定 部。Optionally, a fixing structure is provided on the support member, a fixing portion is provided on the bearing body, and the bearing device further includes a fixing component for detachably connecting the fixing structure and the fixing portion.
可选的，所述固定结构包括设置在所述支撑件上的凸台，所述固定部中开设有供所述凸台穿过的固定孔，所述固定部的外周壁上设置有外螺纹；Optionally, the fixing structure includes a boss provided on the support member, a fixing hole for the boss to pass through is opened in the fixing portion, and an external thread is provided on the outer peripheral wall of the fixing portion ;
所述固定组件包括固定件、第一弹性件、第二弹性件、压紧件和弹性密封件，其中，The fixing assembly includes a fixing member, a first elastic member, a second elastic member, a pressing member and an elastic sealing member, wherein,
所述固定件中开设有固定槽，所述固定槽的内周壁上设置有与所述外螺纹配合的内螺纹，所述第一弹性件、所述第二弹性件、所述压紧件和所述弹性密封件由下而上依次叠置在所述固定槽中，且均套设在所述支撑件上，所述弹性密封件位于所述压紧件与所述固定部伸入至所述固定槽中的一端之间。A fixing groove is opened in the fixing member, an inner thread matched with the outer thread is arranged on the inner peripheral wall of the fixing groove, the first elastic member, the second elastic member, the pressing member and the The elastic seals are sequentially stacked in the fixing grooves from bottom to top, and are all sleeved on the support, and the elastic seals are located between the pressing piece and the fixing part and extend into the fixing part. between one end of the fixing groove.
本发明还提供一种半导体热处理设备，包括装载腔室、工艺腔室和如本发明提供的所述承载装置，其中，所述装载腔室和所述工艺腔室相互连通，所述承载装置可在所述装载腔室和所述工艺腔室之间移动。The present invention also provides a semiconductor heat treatment equipment, comprising a loading chamber, a process chamber and the carrying device provided by the present invention, wherein the loading chamber and the process chamber are communicated with each other, and the carrying device can Move between the load chamber and the process chamber.
本发明具有以下有益效果：The present invention has the following beneficial effects:
本发明提供的半导体热处理设备的承载装置，将多个测温组件均设置在支撑件上，且沿承载主体的轴向间隔排布，每个测温组件均具有延伸至承载位的边缘内侧的测温端，用于对与该测温端对应的分区的温度进行检测，由于上述测温端延伸至承载位的边缘内侧，这可以减小测温端与对应的分区中各承载位所承载的晶圆之间的距离，从而可以减小甚至消除各测温组件的温度测量值与晶圆的实际温度之间的误差，从而能够提高对晶圆测温的准确性，以使各测温组件的温度测量值能够表征晶圆的实际温度，进而无需与其它测温元件配合使用，以提高晶圆的良品率，降低成本，提高半导体热处理设备的使用率。此外，通过将测温装置的支撑件与承载主体连接，并位于承载主体的承载位的边缘外侧，可以使测温装置能够随承载主体的移动而移动，避免支撑件上的各测温组件对承载主体的移动造成干涉，从而可以保证承载装 置在半导体热处理设备中的正常传输。In the bearing device of the semiconductor heat treatment equipment provided by the present invention, a plurality of temperature measuring components are arranged on the support member and are arranged at intervals along the axial direction of the bearing body, and each temperature measuring component has a temperature measuring component extending to the inner side of the edge of the bearing position. The temperature measuring end is used to detect the temperature of the partition corresponding to the temperature measuring end. Since the above temperature measuring end extends to the inside of the edge of the bearing position, this can reduce the load carried by the temperature measuring end and each bearing position in the corresponding partition. The distance between the wafers can be reduced or even eliminated, so as to reduce or even eliminate the error between the temperature measurement value of each temperature measurement component and the actual temperature of the wafer, so as to improve the accuracy of wafer temperature measurement, so that each temperature measurement can be The temperature measurement value of the component can characterize the actual temperature of the wafer, so it does not need to be used in conjunction with other temperature measuring components, so as to improve the yield of the wafer, reduce the cost, and improve the utilization rate of semiconductor heat treatment equipment. In addition, by connecting the support of the temperature measuring device to the bearing body and being located outside the edge of the bearing position of the bearing body, the temperature measuring device can be moved with the movement of the bearing body, avoiding the temperature measuring components on the support The movement of the carrier body causes interference, so that the normal transport of the carrier device in the semiconductor thermal processing apparatus can be ensured.
本发明提供的半导体热处理设备，借助本发明提供的上述承载装置，能够提高对晶圆测温的准确性，从而无需与其它测温元件配合使用，以提高晶圆的良品率，降低成本，提高半导体热处理设备的使用率。此外，还可以避免支撑件上的各测温组件对承载主体的移动造成干涉，从而可以保证承载装置在半导体热处理设备中的正常传输。The semiconductor heat treatment equipment provided by the present invention can improve the accuracy of temperature measurement of wafers with the aid of the above-mentioned carrier device provided by the present invention, so that it is not necessary to cooperate with other temperature measurement components, so as to improve the yield of wafers, reduce costs, and improve the Utilization of semiconductor thermal processing equipment. In addition, the interference of the temperature measuring components on the support to the movement of the carrying body can be avoided, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.
附图说明Description of drawings
图1为现有的半导体立式炉设备及晶舟的结构示意图；Fig. 1 is the structural representation of existing semiconductor vertical furnace equipment and crystal boat;
图2为本发明实施例提供的半导体热处理设备的承载装置的结构示意图；2 is a schematic structural diagram of a carrier device of a semiconductor heat treatment equipment provided by an embodiment of the present invention;
图3为本发明实施例提供的半导体热处理设备的承载装置位于工艺腔室时的结构示意图；3 is a schematic structural diagram of the semiconductor heat treatment equipment provided in an embodiment of the present invention when the carrier device is located in a process chamber;
图4为本发明实施例提供的半导体热处理设备的承载装置位于装载腔室时的结构示意图；4 is a schematic structural diagram of the semiconductor heat treatment equipment provided in an embodiment of the present invention when the carrier device is located in a loading chamber;
图5为本发明实施例提供的半导体热处理设备的承载装置中测温装置的结构示意图；5 is a schematic structural diagram of a temperature measuring device in a bearing device of a semiconductor heat treatment equipment provided by an embodiment of the present invention;
图6为图5中A处的局部放大结构示意图；Fig. 6 is the partial enlarged structure schematic diagram of A place in Fig. 5;
图7为本发明实施例提供的半导体热处理设备的承载装置中测温装置的结构示意图；7 is a schematic structural diagram of a temperature measuring device in a bearing device of a semiconductor heat treatment equipment provided by an embodiment of the present invention;
图8为图7中B处的局部放大结构示意图；Fig. 8 is a partial enlarged structural schematic diagram at B in Fig. 7;
图9为本发明实施例提供的半导体热处理设备的承载装置中限位部件与法兰盘配合时的结构示意图；FIG. 9 is a schematic structural diagram of the supporting device of the semiconductor heat treatment equipment provided by the embodiment of the present invention when the limiting member cooperates with the flange;
图10为本发明实施例提供的半导体热处理设备的承载装置的结构示意图；10 is a schematic structural diagram of a carrier device of a semiconductor heat treatment equipment provided by an embodiment of the present invention;
图11为图10中C处的局部放大结构示意图；FIG. 11 is a schematic view of a partially enlarged structure at C in FIG. 10;
附图标记说明：Description of reference numbers:
11-装卸腔室；12-工艺腔室；121-石英管；13-晶舟；14-测温装置；201-装载腔室；202-工艺腔室；203-工艺管；204-升降装置；21-承载主体；211-承载区域；22-支撑件；23-测温组件；231-延伸部件；232-测温部件；241-第一导电件；242-第二导电件；243-第一连接件；244-第二连接件；25-绝缘部件；26-限位部件；271-固定部；272-固定孔；273-外螺纹；28-固定组件；281-固定件；282-固定槽；283-第一弹性件；284-第二弹性件；285-压紧件；286-弹性密封件；29-凸台；30-法兰盘；31-保温装置；32-晶圆。11-Loading and unloading chamber; 12-Process chamber; 121-Quartz tube; 13-Crystal boat; 14-Temperature measuring device; 201-Loading chamber; 202-Process chamber; 203-Process tube; 204-Lifting device; 21-bearing body; 211-bearing area; 22-supporting member; 23-temperature measuring assembly; 231-extension member; 232-temperature measuring member; 241-first conducting member; 242-second conducting member; 244-Second connector; 25-Insulation part; 26-Limiting part; 271-Fixing part; 272-Fixing hole; 273-External thread; 28-Fixing component; 281-Fixing part; 282-Fixing groove 283 - the first elastic part; 284 - the second elastic part; 285 - pressing part; 286 - elastic sealing part; 29 - boss; 30 - flange;
具体实施方式Detailed ways
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的半导体热处理设备的承载装置及半导体热处理设备进行详细描述。In order for those skilled in the art to better understand the technical solutions of the present invention, the carrier device and the semiconductor heat treatment equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.
如图2所示，本实施例提供一种半导体热处理设备的承载装置，包括测温装置和承载主体21，其中，该承载主体21包括多个用于承载晶圆32的承载位，且多个承载位沿承载主体的轴向间隔排布。具体地，承载主体21上设置有沿其轴向间隔排布的多层插槽，每层插槽能够插设一个晶圆32，该插槽的用于放置晶圆32的位置即为上述承载位。As shown in FIG. 2 , this embodiment provides a carrier device for semiconductor heat treatment equipment, including a temperature measurement device and a carrier body 21 , wherein the carrier body 21 includes a plurality of carrier positions for carrying the wafers 32 , and a plurality of The bearing positions are arranged at intervals along the axial direction of the bearing body. Specifically, the carrier body 21 is provided with multi-layer slots spaced along its axial direction, each layer of the slot can be inserted with a wafer 32, and the position of the slot for placing the wafer 32 is the above-mentioned carrier bit.
测温装置包括支撑件22和多个测温组件23，其中，支撑件22与承载主体21连接，且位于承载主体21的上述承载位外侧。具体地，上述支撑件22例如呈柱状，且沿承载主体21的轴向延伸设置。多个测温组件23均设置在支撑件22上，且沿承载主体21的轴向间隔设置排布，并且每个测温组件23均具有延伸至上述承载位的边缘内侧的测温端，用于对与该测温端对应的分区的温度进行检测。The temperature measurement device includes a support member 22 and a plurality of temperature measurement components 23 , wherein the support member 22 is connected to the bearing body 21 and is located outside the above-mentioned bearing position of the bearing body 21 . Specifically, the above-mentioned support member 22 is, for example, a columnar shape, and is arranged to extend along the axial direction of the carrying body 21 . A plurality of temperature measuring components 23 are arranged on the support 22, and are arranged at intervals along the axial direction of the bearing body 21, and each temperature measuring component 23 has a temperature measuring end extending to the inner side of the edge of the bearing position. For detecting the temperature of the zone corresponding to the temperature measuring end.
承载主体21的用于容置所有晶圆32的整个区域，在承载主体21的轴 向上划分有多个分区211，该分区211的数量与测温组件23的数量相同，且各个测温组件23的测温端一一对应地延伸至各个分区211中，以对该分区211的温度进行检测。例如，如图2所示，上述整个区域平均划分为5个分区211，对应的，测温组件23为5个，且各个测温组件23的测温端一一对应地延伸至各个分区211中，可选的，每个测温组件23的测温端位于对应的分区211中最上层的晶圆32的上方，但是，本发明并不局限于此，在实际应用中，每个测温组件23的测温端还可以位于对应的分区中的任意一层晶圆32的上方或下方，本发明对此没有特别的限制。The entire area of the carrier body 21 for accommodating all the wafers 32 is divided into a plurality of partitions 211 in the axial direction of the carrier body 21 . The number of the partitions 211 is the same as the number of the temperature measuring components 23 , and each temperature measuring component The temperature-measuring ends of 23 extend to each sub-area 211 in a one-to-one correspondence, so as to detect the temperature of the sub-area 211 . For example, as shown in FIG. 2 , the above-mentioned entire area is equally divided into 5 partitions 211 , correspondingly, there are 5 temperature measuring components 23 , and the temperature measuring ends of each temperature measuring component 23 extend to each partition 211 in a one-to-one correspondence. , Optionally, the temperature measurement end of each temperature measurement component 23 is located above the uppermost wafer 32 in the corresponding partition 211, but the present invention is not limited to this, in practical applications, each temperature measurement component The temperature measuring end of 23 may also be located above or below any layer of wafers 32 in the corresponding partition, which is not particularly limited in the present invention.
需要说明的是，各个分区211中的晶圆32的数量可以为一个或者多个，本发明对此没有特别的限制。测温组件23检测到的对应分区211的温度可用于表征该分区211中的晶圆32的实际温度。It should be noted that the number of wafers 32 in each partition 211 may be one or more, which is not particularly limited in the present invention. The temperature of the corresponding partition 211 detected by the temperature measuring component 23 can be used to characterize the actual temperature of the wafer 32 in the partition 211 .
还需要说明的是，在本实施例中，分区211的数量与测温组件23的数量相同，但是，本发明并不局限于此，在实际应用中，一个测温组件23也可以对应多个分区211，而且不同的测温组件23所对应的分区211的数量可以相同，也可以不同。It should also be noted that, in this embodiment, the number of partitions 211 is the same as the number of temperature measuring components 23, however, the present invention is not limited to this, and in practical applications, one temperature measuring component 23 may also correspond to multiple partitions 211, and the number of partitions 211 corresponding to different temperature measuring components 23 may be the same or different.
本实施例提供的半导体热处理设备的承载装置，将多个测温组件23均设置在支撑件22上，且沿承载主体21的轴向间隔排布，每个测温组件23均具有延伸至承载位的边缘内侧的测温端，用于对与该测温端对应的分区211的温度进行检测，由于上述测温端延伸至承载位的边缘内侧，这可以减小测温端与对应的分区211中各承载位所承载的晶圆之间的距离，从而可以减小甚至消除各测温组件23的温度测量值与晶圆32的实际温度之间的误差，从而能够提高对晶圆测温的准确性，以使各测温组件23的温度测量值能够表征晶圆的实际温度，进而无需与其它测温元件配合使用，以提高晶圆的良品率，降低成本，提高半导体热处理设备的使用率。此外，通过将测温装置23的支撑件22与承载主体21连接，并位于承载主体21的承载位的边缘外侧， 可以使测温装置23能够随承载主体21的移动而移动，避免支撑件22上的各测温组件23对承载主体21的移动造成干涉，从而可以保证承载装置在半导体热处理设备中的正常传输。In the bearing device of the semiconductor heat treatment equipment provided in this embodiment, a plurality of temperature measuring components 23 are arranged on the support member 22 and are arranged at intervals along the axial direction of the bearing body 21 . The temperature measuring end inside the edge of the position is used to detect the temperature of the partition 211 corresponding to the temperature measuring end. Since the above temperature measuring end extends to the inside of the edge of the bearing position, this can reduce the temperature measuring end and the corresponding partition. The distance between the wafers carried by each bearing position in 211 can reduce or even eliminate the error between the temperature measurement value of each temperature measuring component 23 and the actual temperature of the wafer 32, thereby improving the temperature measurement of the wafer. so that the temperature measurement value of each temperature measuring component 23 can represent the actual temperature of the wafer, so that it does not need to be used in conjunction with other temperature measuring components, so as to improve the yield of the wafer, reduce the cost, and improve the use of semiconductor heat treatment equipment. Rate. In addition, by connecting the support 22 of the temperature measuring device 23 to the bearing body 21 and being located outside the edge of the bearing position of the bearing body 21, the temperature measuring device 23 can move with the movement of the bearing body 21, avoiding the support 22 Each temperature measuring component 23 on the upper body interferes with the movement of the carrying body 21, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.
本实施例提供的上述承载装置例如可以应用于半导体立式炉设备，在这种情况下，上述承载主体21的轴向即为竖直方向，但是，承载装置的结构并不以此为限，例如，其还可以适用于半导体卧式炉设备，即，上述承载主体21的轴向与水平面相互平行。需要说明的是，在适用于半导体卧式炉设备的承载装置中，各测温组件23的测温端向承载主体21的承载位的边缘内侧延伸，可以一一对应地延伸至各分区211的一侧(例如左侧或右侧)。The above-mentioned carrying device provided in this embodiment can be applied to, for example, semiconductor vertical furnace equipment. In this case, the axial direction of the above-mentioned carrying body 21 is the vertical direction, but the structure of the carrying device is not limited to this. For example, it can also be applied to a semiconductor horizontal furnace equipment, that is, the axial direction and the horizontal plane of the above-mentioned carrier body 21 are parallel to each other. It should be noted that, in the bearing device suitable for the semiconductor horizontal furnace equipment, the temperature measuring end of each temperature measuring component 23 extends to the inside of the edge of the bearing position of the bearing body 21 , and can extend to the end of each partition 211 correspondingly one by one. one side (e.g. left or right).
如图3和图4所示，以半导体热处理设备为半导体立式炉设备为例，半导体立式炉设备中可以设置有相互连通的装载腔室201和工艺腔室202，其中，装载腔室201位于工艺腔室202的下方，本实施例提供的上述承载装置可以在装载腔室201中对晶圆32进行装卸，装载腔室201中可以设置有升降装置204，用于驱动承载装置整体上升至工艺腔室202中，或下降至装载腔室201中。As shown in FIG. 3 and FIG. 4 , taking the semiconductor vertical furnace equipment as an example, the semiconductor vertical furnace equipment may be provided with a loading chamber 201 and a process chamber 202 that communicate with each other, wherein the loading chamber 201 Located below the process chamber 202, the above-mentioned carrier device provided in this embodiment can load and unload the wafer 32 in the loading chamber 201. The loading chamber 201 can be provided with a lifting device 204, which is used to drive the carrier device to rise as a whole. into process chamber 202 , or down into load chamber 201 .
工艺腔室202中可以设置有工艺管203，可选的，该工艺管203的制作材料可以采用石英，上述承载装置可以上升至工艺腔室202中，并进入工艺管203的内部空间中，本实施例提供的承载装置中，通过使测温装置的支撑件22与承载主体21连接，因此，测温装置可以随承载主体21的升降而升降，即，测温装置可以随承载主体21上升至工艺腔室202中，或下降至装载腔室201中，从而避免支撑件22上的各测温组件23对承载主体21的移动造成干涉，从而可以保证承载装置在半导体热处理设备中的正常传输。但是，半导体立式炉设备的结构并不以此为限，例如，装载腔室201也可以位于工艺腔室202的上方。The process chamber 202 may be provided with a process tube 203. Optionally, the manufacturing material of the process tube 203 may be quartz, and the above-mentioned carrying device may ascend into the process chamber 202 and enter the inner space of the process tube 203. In the carrying device provided by the embodiment, by connecting the support 22 of the temperature measuring device with the carrying body 21, the temperature measuring device can rise and fall with the lifting and lowering of the carrying body 21, that is, the temperature measuring device can rise with the carrying body 21 to In the process chamber 202, or descend into the loading chamber 201, so as to avoid the interference of the temperature measuring components 23 on the support 22 to the movement of the carrier body 21, so as to ensure the normal transmission of the carrier device in the semiconductor heat treatment equipment. However, the structure of the semiconductor vertical furnace equipment is not limited thereto, for example, the loading chamber 201 may also be located above the process chamber 202 .
另外，半导体热处理设备的类型也并不限于半导体立式炉设备，例如， 半导体热处理设备也可以为半导体卧式炉设备，半导体卧式炉设备中也可以设置有相互连通的装载腔室201和工艺腔室202，此时，装载腔室201可以位于工艺腔室202的右侧，也可以位于工艺腔室202的左侧，装载腔室201中可以设置有传输装置，通过将承载装置放置于传输装置上，以借助传输装置驱动承载装置向左或向右平移至工艺腔室202中，本实施例提供的承载装置中，通过使测温装置的支撑件22与承载主体21连接，因此，测温装置可以随承载主体21的左右平移而左右平移，从而避免支撑件22上的各测温组件23对承载主体21的移动造成干涉，从而可以保证承载装置在半导体热处理设备中的正常传输。In addition, the type of semiconductor heat treatment equipment is not limited to semiconductor vertical furnace equipment. For example, semiconductor heat treatment equipment can also be semiconductor horizontal furnace equipment, and the semiconductor horizontal furnace equipment can also be provided with interconnected loading chambers 201 and processes. Chamber 202, at this time, the loading chamber 201 can be located on the right side of the process chamber 202, or can be located on the left side of the process chamber 202, the loading chamber 201 can be provided with a transmission device, by placing the carrying device on the transmission On the device, the carrying device is driven to move left or right into the process chamber 202 by means of the transmission device. The temperature device can translate left and right along with the left and right translation of the carrying body 21, so as to avoid the interference of the temperature measuring components 23 on the support 22 to the movement of the carrying body 21, so as to ensure the normal transmission of the carrying device in the semiconductor heat treatment equipment.
如图5和图6所示，在本发明一优选实施例中，测温组件23可以包括延伸部件231和测温部件232，其中，延伸部件231的一端与支撑件22连接，另一端作为上述测温端延伸至上述承载位的边缘内侧；测温部件232设置在延伸部件231内，且位于上述测温端处，并且测温部件232的接线(用作信号传输部件)依次通过延伸部件231和支撑件22引出，以能够延伸至工艺腔室202的外部。上述延伸部件231用于对设置在其中的测温部件232进行支撑以及保护，同时能够使测温部件232位于更靠近晶圆32中心的区域。As shown in FIGS. 5 and 6 , in a preferred embodiment of the present invention, the temperature measuring assembly 23 may include an extension part 231 and a temperature measurement part 232 , wherein one end of the extension part 231 is connected to the support 22 , and the other end serves as the above-mentioned The temperature measurement end extends to the inside of the edge of the above-mentioned bearing position; the temperature measurement part 232 is arranged in the extension part 231 and is located at the above temperature measurement end, and the wiring of the temperature measurement part 232 (used as a signal transmission part) passes through the extension part 231 in turn And the support member 22 is drawn out so as to be able to extend to the outside of the process chamber 202 . The above-mentioned extension member 231 is used to support and protect the temperature measurement member 232 disposed therein, and at the same time, the temperature measurement member 232 can be located in a region closer to the center of the wafer 32 .
具体地，如图5和图6所示，支撑件22和延伸部件231可以均为中空结构，且延伸部件231的内部空间与支撑件22的内部空间相连通，测温部件232设置在延伸部件231的内部空间中，且测温部件232的接线依次经由延伸部件231的内部空间和支撑件22的内部空间引出。测温部件232的接线作为信号传输部件用于将测温部件232在检测温度时所产生的电信号传输至外部的接收处理部件(图中未显示)，该接收处理部件用于对测温部件232在检测温度时所产生的电信号进行处理，以显示各测温部件232所测得的温度。Specifically, as shown in FIG. 5 and FIG. 6 , the support member 22 and the extension member 231 may both be hollow structures, and the inner space of the extension member 231 is communicated with the inner space of the support member 22 , and the temperature measurement member 232 is disposed on the extension member. In the inner space of the extension member 231 , and the wiring of the temperature measuring member 232 is led out through the inner space of the extension member 231 and the inner space of the support member 22 in sequence. The wiring of the temperature measuring component 232 is used as a signal transmission component to transmit the electrical signal generated by the temperature measuring component 232 when detecting the temperature to an external receiving and processing component (not shown in the figure), and the receiving and processing component is used for the temperature measuring component. 232 processes the electrical signal generated when the temperature is detected, so as to display the temperature measured by each temperature measuring component 232 .
可选的，延伸部件231的制作材料可以包括石英。Optionally, the material for making the extension part 231 may include quartz.
在本发明一优选实施例中，各测温部件232的测温端可以与承载位的中 心在承载主体21的轴向上相对设置。这样设置，可以使各测温部件232的测温端与置于承载位上的晶圆圆心相对位置，从而可以使各测温部件232测得的温度检测值能够更接近晶圆32的中心温度，进而进一步提高对晶圆32测温的准确性。In a preferred embodiment of the present invention, the temperature measuring end of each temperature measuring component 232 may be disposed opposite to the center of the bearing position in the axial direction of the bearing body 21. In this way, the temperature measuring end of each temperature measuring component 232 can be positioned relative to the center of the wafer placed on the bearing position, so that the temperature detection value measured by each temperature measuring component 232 can be closer to the center temperature of the wafer 32 , thereby further improving the accuracy of temperature measurement of the wafer 32 .
如图6所示，在本发明一优选实施例中，测温部件232可以包括热电偶，热电偶可以包括第一电极、第二电极、第一连接件243、第二连接件244、第一导电件241、第二导电件242和绝缘部件25，其中，第一电极和第二电极间隔设置在延伸部件231内，且位于上述测温端处；第一连接件243和第二连接件244间隔设置在延伸部件231内；第一导电件241和第二导电件242间隔设置在支撑件22内；上述第一电极通过第一连接件243与第一导电件241电连接，上述第二电极通过第二连接件244与第二导电件242电连接。上述第一连接件243、第二连接件244、第一导电件241和第二导电件242即为上述测温部件232的接线，用于信号传输。As shown in FIG. 6, in a preferred embodiment of the present invention, the temperature measuring component 232 may include a thermocouple, and the thermocouple may include a first electrode, a second electrode, a first connector 243, a second connector 244, a first The conductive member 241, the second conductive member 242 and the insulating member 25, wherein the first electrode and the second electrode are arranged in the extension member 231 at intervals, and are located at the temperature measuring end; the first connecting member 243 and the second connecting member 244 The first conductive member 241 and the second conductive member 242 are arranged in the support member 22 at intervals; the first electrode is electrically connected to the first conductive member 241 through the first connecting member 243, and the second electrode is It is electrically connected to the second conductive member 242 through the second connecting member 244 . The first connecting member 243 , the second connecting member 244 , the first conducting member 241 and the second conducting member 242 are the wiring of the temperature measuring component 232 for signal transmission.
绝缘部件25设置在延伸部件231和支撑件22内，用于对第一导电件241和第二导电件242之间、第一连接件243和第二连接件244之间进行电绝缘。The insulating part 25 is disposed in the extending part 231 and the supporting part 22 for electrically insulating between the first conductive part 241 and the second conductive part 242 and between the first connection part 243 and the second connection part 244 .
上述第一电极和第二电极电导通，第一导电件241和第二导电件242在外部的接收处理部件中电导通，这两个电导通处的温度出现差异时，会在上述第一电极和第二电极所在的回路中产生电动势，接收处理部件可以接收到该电动势并对电动势进行处理，就可以将各测温部件232所测得的温度显示出来。The first electrode and the second electrode are electrically connected, and the first conductive member 241 and the second conductive member 242 are electrically connected in the external receiving processing component. An electromotive force is generated in the circuit where the electrode and the second electrode are located, and the receiving and processing component can receive the electromotive force and process the electromotive force, so that the temperature measured by each temperature measuring component 232 can be displayed.
借助上述绝缘部件25，对第一导电件241和第二导电件242之间、第一连接件243和第二连接件244之间进行电绝缘，可以避免上述第一电极和第二电极所在的回路在除了上述两个电导通处之外的其他位置处电导通，从而可以保证该回路上产生电动势的准确性，从而提高测温装置的测温准确性。With the aid of the above-mentioned insulating member 25, the electrical insulation between the first conductive member 241 and the second conductive member 242 and between the first connecting member 243 and the second connecting member 244 can be avoided, so that the above-mentioned first electrode and the second electrode are located. The loop is electrically conducted at other positions except the above-mentioned two conducting places, so that the accuracy of the electromotive force generated on the loop can be ensured, thereby improving the temperature measuring accuracy of the temperature measuring device.
可选的，第一电极的制作材料和第二电极的制作材料可以包括贵金属。Optionally, the fabrication material of the first electrode and the fabrication material of the second electrode may include noble metals.
优选的，第一电极的制作材料可以为铂铑合金，第二电极的制作材料可以为铂。Preferably, the material for making the first electrode may be platinum-rhodium alloy, and the material for making the second electrode may be platinum.
可选的，铂铑合金中铑的占比范围可以为10％-13％，铂的占比范围可以为90％-87％。Optionally, the proportion of rhodium in the platinum-rhodium alloy may be in the range of 10%-13%, and the proportion of platinum may be in the range of 90%-87%.
优选的，铂铑合金中铑的占比可以为13％，铂的占比可以为87％。Preferably, the proportion of rhodium in the platinum-rhodium alloy may be 13%, and the proportion of platinum may be 87%.
可选的，第一连接件243的制作材料可以包括贵金属。优选的，第一连接件243的制作材料可以为铂铑合金。Optionally, the fabrication material of the first connecting member 243 may include precious metal. Preferably, the first connecting member 243 may be made of platinum-rhodium alloy.
可选的，第二连接件244的制作材料可以包括贵金属。优选的，第二连接件244的制作材料可以为铂铑合金。Optionally, the fabrication material of the second connecting member 244 may include precious metal. Preferably, the second connecting member 244 may be made of platinum-rhodium alloy.
可选的，第一导电件241的制作材料可以包括贵金属。优选的，第一导电件241的制作材料可以为铂铑合金。Optionally, the fabrication material of the first conductive member 241 may include noble metal. Preferably, the first conductive member 241 can be made of platinum-rhodium alloy.
可选的，第二导电件242的制作材料可以包括贵金属。优选的，第二导电件242的制作材料可以为铂铑合金。Optionally, the fabrication material of the second conductive member 242 may include noble metal. Preferably, the second conductive member 242 can be made of platinum-rhodium alloy.
可选的，第一连接件243的制作材料和第一导电件241的制作材料可以相同，第二连接件244的制作材料和第二导电件242的制作材料可以相同。Optionally, the first connecting member 243 may be made of the same material as the first conductive member 241 , and the second connecting member 244 and the second conductive member 242 may be made of the same material.
如图6所示，在本发明一优选实施例中，绝缘部件25可以包括绝缘套管，该绝缘套管内设置有相互电绝缘的第一通道和第二通道，其中，第一通道用于供第一导电件241和第一连接件243穿过，第二通道用于供第二导电件242和第二连接件244穿过。由此，可以实现第一导电件241和第二导电件242之间、第一连接件243和第二连接件244之间的电绝缘。As shown in FIG. 6 , in a preferred embodiment of the present invention, the insulating component 25 may include an insulating sleeve, and the insulating sleeve is provided with a first channel and a second channel that are electrically insulated from each other, wherein the first channel is used for supplying The first conductive member 241 and the first connection member 243 pass through, and the second channel is used for the second conductive member 242 and the second connection member 244 to pass through. Thus, electrical insulation between the first conductive member 241 and the second conductive member 242 and between the first connection member 243 and the second connection member 244 can be achieved.
如图7所示，在本发明一优选实施例中，支撑件22上设置有限位部件26，该限位部件26与承载主体21相配合，用于限制支撑件22相对于承载主体21转动，这样可以避免设置支撑件22上的测温部件232与承载位的相对位置发生变化，进而提高测温装置测温的稳定性。As shown in FIG. 7 , in a preferred embodiment of the present invention, a limiting member 26 is provided on the support member 22 , and the limiting member 26 cooperates with the bearing body 21 to limit the rotation of the support member 22 relative to the bearing body 21 . In this way, the relative position of the temperature measuring member 232 on the support member 22 and the bearing position can be prevented from changing, thereby improving the temperature measurement stability of the temperature measuring device.
如图8和图9所示，在本发明一优选实施例中，限位部件26可以设置 在支撑件22上，具体地，限位部件26具有可套设在支撑件22上的通孔。承载主体21上开设有限位槽，限位部件26设置在该限位槽中，且限位部件26的外周面与限位槽的内周面相配合，以限制限位部件26相对于限位槽转动，从而限制支撑件22相对于承载主体21转动。As shown in FIG. 8 and FIG. 9 , in a preferred embodiment of the present invention, the limiting member 26 can be disposed on the support member 22 . Specifically, the limiting member 26 has a through hole that can be sleeved on the support member 22 . A limiting groove is defined on the carrying body 21, and the limiting member 26 is arranged in the limiting groove, and the outer peripheral surface of the limiting member 26 cooperates with the inner circumferential surface of the limiting groove to limit the limiting member 26 relative to the limiting groove. Rotation, thereby restricting the rotation of the support member 22 relative to the carrying body 21 .
如图9所示，可选的，在承载主体21的底部可以设置有法兰盘30，上述限位槽可以开设在法兰盘30的边缘。As shown in FIG. 9 , optionally, a flange 30 may be provided at the bottom of the carrying body 21 , and the above-mentioned limiting groove may be opened on the edge of the flange 30 .
如图2所示，可选的，法兰盘30上可以设置有保温装置31，以在半导体热处理工艺中对承载于承载主体21上的晶圆32进行保温，避免承载于承载主体21上的晶圆32在半导体热处理工艺中快速散热。As shown in FIG. 2 , optionally, a heat preservation device 31 may be provided on the flange 30 to keep the wafers 32 carried on the carrier body 21 warm during the semiconductor heat treatment process, so as to avoid the wafers 32 carried on the carrier body 21 . Wafer 32 rapidly dissipates heat during semiconductor thermal processing.
可选的，限位部件26的高度可以为8毫米-10毫米。Optionally, the height of the limiting member 26 may be 8 mm to 10 mm.
可选的，限位部件26的长度可以为12毫米-16毫米。Optionally, the length of the limiting member 26 may be 12 mm to 16 mm.
可选的，限位部件26的宽度可以为12毫米-16毫米。Optionally, the width of the limiting member 26 may be 12 mm to 16 mm.
如图11所示，在本发明一优选实施例中，支撑件22上可以设置有固定结构，承载主体21上可以设置有固定部271，如图10所示，承载装置可以还包括固定组件28，用于可拆卸地连接固定结构与固定部271，以将支撑件22可拆卸的固定在承载主体21上。借助固定组件28可拆卸地连接固定结构与固定部271，使支撑件22可拆卸的固定在承载主体21上，以能够便于对测温装置进行维护或者更换。As shown in FIG. 11 , in a preferred embodiment of the present invention, the supporting member 22 may be provided with a fixing structure, and the bearing body 21 may be provided with a fixing portion 271 . As shown in FIG. 10 , the bearing device may further include a fixing component 28 , for detachably connecting the fixing structure and the fixing portion 271 , so as to detachably fix the support member 22 on the carrying body 21 . By means of the fixing assembly 28 , the fixing structure and the fixing portion 271 are detachably connected, so that the supporting member 22 is detachably fixed on the bearing body 21 , so that the maintenance or replacement of the temperature measuring device can be facilitated.
如图11所示，在本发明一优选实施例中，固定结构可以包括设置在支撑件22上的凸台29，固定部271中可以开设有供凸台29穿过的固定孔272，固定部271的外周壁上设置有外螺纹273，固定组件28可以包括固定件281、第一弹性件283、第二弹性件284、压紧件285和弹性密封件286，其中，固定件281中开设有固定槽282，固定槽282的内周壁上设置有与外螺纹273配合的内螺纹，第一弹性件283、第二弹性件284、压紧件285和弹性密封件286由下而上依次叠置在固定槽282中，且均套设在支撑件22上，弹性密封 件286位于压紧件285与固定部271伸入至固定槽282中的一端之间。As shown in FIG. 11 , in a preferred embodiment of the present invention, the fixing structure may include a boss 29 provided on the support member 22 , and a fixing hole 272 may be opened in the fixing portion 271 for the boss 29 to pass through. The outer peripheral wall of 271 is provided with an external thread 273, and the fixing assembly 28 may include a fixing member 281, a first elastic member 283, a second elastic member 284, a pressing member 285 and an elastic sealing member 286, wherein the fixing member 281 is provided with a The fixing groove 282, the inner peripheral wall of the fixing groove 282 is provided with an inner thread that cooperates with the outer thread 273, and the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are stacked in sequence from bottom to top In the fixing groove 282 , and both are sleeved on the support member 22 , the elastic sealing member 286 is located between the pressing member 285 and the end of the fixing portion 271 extending into the fixing groove 282 .
如图10和图11所示，固定部271可以设置在承载主体21底部的法兰盘30上，固定部271沿法兰盘30向下延伸，其中开设有供凸台29穿过的固定孔272，其外周壁上设置有外螺纹273，固定槽282的内周壁上的内螺纹与固定部271外周壁上的外螺纹273螺纹配合，以使固定件281与固定部271可拆卸的连接，第一弹性件283设置在固定槽282的底部，并套设在支撑件22上，第二弹性件284叠置在第一弹性件283上，并套设在支撑件22上，压紧件285叠置在第二弹性件284上，并套设在支撑件22上，弹性密封件286叠置在压紧件285上，并套设在支撑件22上，且位于压紧件285与固定部271伸入至固定槽282中的一端之间，通过固定件281与固定部271的螺纹配合，将第一弹性件283、第二弹性件284、压紧件285和弹性密封件286压紧固定在固定槽282中，并通过第一弹性件283、第二弹性件284、压紧件285和弹性密封件286均套设在支撑件22上，以通过第一弹性件283、第二弹性件284、压紧件285和弹性密封件286将支撑件22夹紧其中，从而将支撑件22可拆卸地固定在承载主体21上，并避免支撑件22相对于固定孔272和固定槽282晃动，从而避免设置在支撑件22上的测温部件232与承载位的相对位置发生变化，进而提高测温装置测温的稳定性。As shown in FIG. 10 and FIG. 11 , the fixing part 271 can be arranged on the flange 30 at the bottom of the carrying body 21 , the fixing part 271 extends downward along the flange 30 , and a fixing hole for the boss 29 to pass through is opened therein. 272, an outer thread 273 is provided on its outer peripheral wall, and the inner thread on the inner peripheral wall of the fixing groove 282 is threaded with the outer thread 273 on the outer peripheral wall of the fixing part 271, so that the fixing part 281 can be detachably connected with the fixing part 271, The first elastic member 283 is disposed at the bottom of the fixing groove 282 and is sleeved on the support member 22, the second elastic member 284 is stacked on the first elastic member 283 and sleeved on the support member 22, and the pressing member 285 Stacked on the second elastic member 284 and sleeved on the support member 22, the elastic sealing member 286 is stacked on the pressing member 285 and sleeved on the support member 22, and is located between the pressing member 285 and the fixing part 271 is inserted between one end of the fixing groove 282, and the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are pressed and fixed by the screw fitting of the fixing member 281 and the fixing portion 271. In the fixing groove 282, the first elastic member 283, the second elastic member 284, the pressing member 285 and the elastic sealing member 286 are all sleeved on the support member 22, so as to pass the first elastic member 283, the second elastic member 284 , the pressing member 285 and the elastic sealing member 286 clamp the supporting member 22 therein, so as to detachably fix the supporting member 22 on the carrying body 21, and prevent the supporting member 22 from shaking relative to the fixing hole 272 and the fixing groove 282, Thus, the relative position of the temperature measuring component 232 disposed on the support 22 and the bearing position is prevented from changing, thereby improving the temperature measurement stability of the temperature measuring device.
可选的，弹性密封件286可以包括O型橡胶圈。Optionally, elastomeric seal 286 may include an O-ring.
可选的，第一弹性件283的制作材料可以包括聚四氟乙烯(Poly tetra fluoroethylene，简称PTFE)。Optionally, the material for making the first elastic member 283 may include polytetrafluoroethylene (Poly tetra fluoroethylene, PTFE for short).
可选的，第二弹性件284的制作材料可以包括聚四氟乙烯。Optionally, the material for making the second elastic member 284 may include polytetrafluoroethylene.
可选的，压紧件285的制作材料可以包括不锈钢。Optionally, the manufacturing material of the pressing member 285 may include stainless steel.
如图2和图3所示，作为另一个技术方案，本发明实施例还提供一种半导体热处理设备，包括装载腔室201、工艺腔室202和如本发明实施例提供的承载装置，其中，装载腔室201和工艺腔室202相互连通，承载装置可在 装载腔室201和工艺腔室202之间移动。As shown in FIG. 2 and FIG. 3 , as another technical solution, an embodiment of the present invention further provides a semiconductor heat treatment equipment, which includes a loading chamber 201, a process chamber 202, and the carrying device provided by the embodiment of the present invention, wherein, The loading chamber 201 and the process chamber 202 communicate with each other, and the carrier device can move between the loading chamber 201 and the process chamber 202 .
综上所述，本发明实施例提供的半导体热处理设备，借助本发明实施例提供的上述承载装置，能够提高对晶圆测温的准确性，从而无需与其它测温元件配合使用，以提高晶圆的良品率，降低成本，提高半导体热处理设备的使用率。此外，还可以避免支撑件上的各测温组件对承载主体的移动造成干涉，从而可以保证承载装置在半导体热处理设备中的正常传输。To sum up, the semiconductor heat treatment equipment provided by the embodiments of the present invention can improve the accuracy of wafer temperature measurement by means of the above-mentioned carrier device provided by the embodiments of the present invention, so that it is Round the yield rate, reduce costs, and improve the utilization rate of semiconductor heat treatment equipment. In addition, the interference of the temperature measuring components on the support to the movement of the carrying body can be avoided, so that the normal transmission of the carrying device in the semiconductor heat treatment equipment can be ensured.
可以解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, without departing from the spirit and essence of the present invention, various modifications and improvements can be made, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (10)

  1. 一种半导体热处理设备的承载装置，包括承载主体，所述承载主体包括多个用于承载晶圆的承载位，且多个所述承载位沿所述承载主体的轴向间隔排布，其特征在于，还包括测温装置，所述测温装置包括支撑件和多个测温组件，其中，所述支撑件与所述承载主体连接，且位于所述承载主体的所述承载位的边缘外侧；A bearing device for a semiconductor heat treatment equipment, comprising a bearing body, the bearing body includes a plurality of bearing positions for bearing wafers, and the plurality of bearing positions are arranged at intervals along the axial direction of the bearing body, and is characterized by: It also includes a temperature measurement device, the temperature measurement device includes a support member and a plurality of temperature measurement components, wherein the support member is connected with the bearing body and is located outside the edge of the bearing position of the bearing body ;
    多个所述测温组件均设置在所述支撑件上，且沿所述承载主体的轴向间隔排布，并且每个所述测温组件均具有延伸至所述承载位的边缘内侧的测温端，用于对与该测温端对应的分区的温度进行检测。A plurality of the temperature measuring components are arranged on the support member and are arranged at intervals along the axial direction of the bearing body, and each of the temperature measuring components has a measuring device extending to the inner side of the edge of the bearing position. The temperature end is used to detect the temperature of the partition corresponding to the temperature measurement end.
  2. 根据权利要求1所述的半导体热处理设备的承载装置，其特征在于，所述测温端与所述承载位的中心在所述承载主体的轴向上相对设置。The bearing device for semiconductor heat treatment equipment according to claim 1, wherein the temperature measuring end and the center of the bearing position are arranged opposite to each other in the axial direction of the bearing body.
  3. 根据权利要求1或2所述的半导体热处理设备的承载装置，其特征在于，所述测温组件包括延伸部件和测温部件，其中，所述延伸部件的一端与所述支撑件连接，另一端作为所述测温端延伸至所述承载位的边缘内侧；The carrier device for semiconductor heat treatment equipment according to claim 1 or 2, wherein the temperature measuring component comprises an extension part and a temperature measurement part, wherein one end of the extension part is connected to the support, and the other end is connected to the support member. As the temperature measuring end extends to the inside of the edge of the bearing position;
    所述测温部件设置在所述延伸部件内，且位于所述测温端处，并且所述测温部件的接线依次通过所述延伸部件和所述支撑件引出。The temperature measuring component is arranged in the extending component and is located at the temperature measuring end, and the wiring of the temperature measuring component is led out through the extending component and the support in sequence.
  4. 根据权利要求3所述的半导体热处理设备的承载装置，其特征在于，所述测温部件包括热电偶，所述热电偶包括第一电极、第二电极、第一连接件、第二连接件、第一导电件、第二导电件和绝缘部件，其中，所述第一电极和所述第二电极间隔设置在所述延伸部件内，且位于所述测温端处；所述第一连接件和所述第二连接件间隔设置在所述延伸部件内；所述第一导电件和所述第二导电件间隔设置在所述支撑件内；所述第一电极通过所述第一连接件与所述第一导电件电连接，所述第二电极通过所述第二连接件与所述第 二导电件电连接；The carrier device for semiconductor heat treatment equipment according to claim 3, wherein the temperature measuring component comprises a thermocouple, and the thermocouple comprises a first electrode, a second electrode, a first connector, a second connector, A first conductive member, a second conductive member and an insulating member, wherein the first electrode and the second electrode are arranged in the extending member at intervals and located at the temperature measuring end; the first connecting member and the second connecting member is arranged in the extending part at intervals; the first conducting member and the second conducting member are arranged in the supporting member at intervals; the first electrode passes through the first connecting member is electrically connected to the first conductive member, and the second electrode is electrically connected to the second conductive member through the second connection member;
    所述绝缘部件设置在所述延伸部件和所述支撑件内，用于对所述第一导电件和所述第二导电件之间、所述第一连接件和所述第二连接件之间进行电绝缘。The insulating part is arranged in the extension part and the support part, and is used for the connection between the first conductive part and the second conductive part and between the first connection part and the second connection part. Electrical insulation between them.
  5. 根据权利要求4所述的半导体热处理设备的承载装置，其特征在于，所述绝缘部件包括绝缘套管，所述绝缘套管内设置有相互电绝缘的第一通道和第二通道，其中，所述第一通道用于供所述第一导电件和所述第一连接件穿过，所述第二通道用于供所述第二导电件和所述第二连接件穿过。The carrier device for semiconductor heat treatment equipment according to claim 4, wherein the insulating member comprises an insulating sleeve, and the insulating sleeve is provided with a first channel and a second channel that are electrically insulated from each other, wherein the The first channel is used for passing the first conductive member and the first connecting member, and the second channel is used for passing the second conductive member and the second connecting member.
  6. 根据权利要求1所述的半导体热处理设备的承载装置，其特征在于，所述支撑件上设置有限位部件，所述限位部件与所述承载主体相配合，用于限制所述支撑件相对于所述承载主体转动。The carrier device for semiconductor heat treatment equipment according to claim 1, wherein a limiting member is provided on the support member, and the limiting member cooperates with the carrier body and is used to limit the relative movement of the support member to the supporting member. The carrying body rotates.
  7. 根据权利要求6所述的半导体热处理设备的承载装置，其特征在于，所述限位部件设置在所述支撑件上，所述承载主体上开设有限位槽，所述限位部件设置在所述限位槽中，且所述限位部件的外周面与所述限位槽的内周面相配合，以限制所述限位部件相对于所述限位槽转动。The carrier device for semiconductor heat treatment equipment according to claim 6, wherein the limiting member is provided on the support member, a limiting groove is defined on the carrier body, and the limiting member is provided on the supporting member. In the limiting slot, the outer peripheral surface of the limiting member is matched with the inner peripheral surface of the limiting slot, so as to limit the rotation of the limiting member relative to the limiting slot.
  8. 根据权利要求1所述的半导体热处理设备的承载装置，其特征在于，所述支撑件上设置有固定结构，所述承载主体上设置有固定部，所述承载装置还包括固定组件，用于可拆卸地连接所述固定结构与所述固定部。The carrier device for semiconductor heat treatment equipment according to claim 1, wherein a fixing structure is provided on the support member, a fixing portion is provided on the carrier body, and the carrier device further comprises a fixing component for The fixing structure and the fixing portion are detachably connected.
  9. 根据权利要求8所述的半导体热处理设备的承载装置，其特征在于，所述固定结构包括设置在所述支撑件上的凸台，所述固定部中开设有供所述凸台穿过的固定孔，所述固定部的外周壁上设置有外螺纹；The carrier device for semiconductor heat treatment equipment according to claim 8, wherein the fixing structure comprises a boss provided on the support member, and a fixing portion for the boss to pass through is opened in the fixing portion. a hole, an outer thread is provided on the outer peripheral wall of the fixing part;
    所述固定组件包括固定件、第一弹性件、第二弹性件、压紧件和弹性密 封件，其中，The fixing assembly includes a fixing member, a first elastic member, a second elastic member, a pressing member and an elastic sealing member, wherein,
    所述固定件中开设有固定槽，所述固定槽的内周壁上设置有与所述外螺纹配合的内螺纹，所述第一弹性件、所述第二弹性件、所述压紧件和所述弹性密封件由下而上依次叠置在所述固定槽中，且均套设在所述支撑件上，所述弹性密封件位于所述压紧件与所述固定部伸入至所述固定槽中的一端之间。A fixing groove is opened in the fixing member, an inner thread matched with the outer thread is arranged on the inner peripheral wall of the fixing groove, the first elastic member, the second elastic member, the pressing member and the The elastic seals are sequentially stacked in the fixing grooves from bottom to top, and are all sleeved on the support, and the elastic seals are located between the pressing piece and the fixing part and extend into the fixing part. between one end of the fixing groove.
  10. 一种半导体热处理设备，其特征在于，包括装载腔室、工艺腔室和如权利要求1-9任意一项所述承载装置，其中，所述装载腔室和所述工艺腔室相互连通，所述承载装置可在所述装载腔室和所述工艺腔室之间移动。A semiconductor heat treatment equipment, characterized in that it comprises a loading chamber, a process chamber and the carrying device according to any one of claims 1-9, wherein the loading chamber and the process chamber are communicated with each other, so The carrier is movable between the loading chamber and the process chamber.
PCT/CN2021/132757 2020-11-27 2021-11-24 Carrying device of semiconductor heat treatment apparatus, and semiconductor heat treatment apparatus WO2022111519A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631909A (en) * 2023-05-25 2023-08-22 上海稷以科技有限公司 Semiconductor test apparatus and position adjustment method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112530826B (en) * 2020-11-27 2024-05-17 北京北方华创微电子装备有限公司 Carrier device of semiconductor heat treatment equipment and semiconductor heat treatment equipment
CN114086146B (en) * 2021-11-18 2023-09-08 北京北方华创微电子装备有限公司 Semiconductor process equipment and bearing device thereof
CN114355998B (en) * 2021-12-17 2023-05-12 西安北方华创微电子装备有限公司 Compensation parameter acquisition method and equipment for semiconductor heat treatment equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283454A (en) * 1996-04-17 1997-10-31 Kokusai Electric Co Ltd Temperature control apparatus for electric furnace
US20070195853A1 (en) * 2003-07-01 2007-08-23 Youngchul Park Heat treatment apparatus and method of calibrating the apparatus
CN102737988A (en) * 2011-04-05 2012-10-17 东京毅力科创株式会社 Heat treatment apparatus and heat treatment method
CN110739252A (en) * 2019-11-27 2020-01-31 北京北方华创微电子装备有限公司 Semiconductor processing equipment
CN112530826A (en) * 2020-11-27 2021-03-19 北京北方华创微电子装备有限公司 Bearing device of semiconductor heat treatment equipment and semiconductor heat treatment equipment

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4393009B2 (en) * 2001-03-30 2010-01-06 東京エレクトロン株式会社 Vertical heat treatment equipment
JP3377996B1 (en) * 2001-12-27 2003-02-17 東京エレクトロン株式会社 Heat treatment boat and vertical heat treatment equipment
JP4712343B2 (en) * 2003-10-30 2011-06-29 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method, program, and recording medium
JP5973173B2 (en) * 2012-01-23 2016-08-23 東京エレクトロン株式会社 Heat treatment apparatus and control method for heat treatment apparatus
JP5644007B2 (en) * 2012-02-10 2014-12-24 東京エレクトロン株式会社 Temperature sensor and heat treatment apparatus
JP6820766B2 (en) * 2017-03-02 2021-01-27 東京エレクトロン株式会社 Gas introduction mechanism and heat treatment equipment
CN109244011B (en) * 2018-09-05 2021-07-23 黄家仓 Heat treatment device for semiconductor integrated wafer production
CN110993550B (en) * 2019-12-25 2022-12-09 北京北方华创微电子装备有限公司 Semiconductor heat treatment equipment
CN111524835B (en) * 2020-04-29 2021-09-17 北京北方华创微电子装备有限公司 Semiconductor processing equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283454A (en) * 1996-04-17 1997-10-31 Kokusai Electric Co Ltd Temperature control apparatus for electric furnace
US20070195853A1 (en) * 2003-07-01 2007-08-23 Youngchul Park Heat treatment apparatus and method of calibrating the apparatus
CN102737988A (en) * 2011-04-05 2012-10-17 东京毅力科创株式会社 Heat treatment apparatus and heat treatment method
CN110739252A (en) * 2019-11-27 2020-01-31 北京北方华创微电子装备有限公司 Semiconductor processing equipment
CN112530826A (en) * 2020-11-27 2021-03-19 北京北方华创微电子装备有限公司 Bearing device of semiconductor heat treatment equipment and semiconductor heat treatment equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116631909A (en) * 2023-05-25 2023-08-22 上海稷以科技有限公司 Semiconductor test apparatus and position adjustment method
CN116631909B (en) * 2023-05-25 2024-03-22 上海稷以科技有限公司 Semiconductor test apparatus and position adjustment method

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