JP2009218301A - Temperature measuring apparatus, placement table structure and thermal processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature measuring apparatus for performing a cheap temperature measurement with a high accuracy, and a placement table structure and a thermal processing apparatus using the temperature measuring apparatus. <P>SOLUTION: In the temperature measuring apparatus provided in a placement table 32 installing a workpiece W to which a predetermined thermal processing is carried out, in the placement table 32 there are provided: a probe body 54 whose upper limit portion is exposed to a front surface, while being embedded along a thickness direction of the placement table 32; temperature control means 56 for carrying out a heating and/or a cooling of a lower limit portion of the probe body 54; a first temperature sensor 58 measuring a temperature of an upper limit portion of the probe body 54; a second temperature sensor 60 measuring a temperature of the lower limit portion of the probe body 54; a temperature difference detecting section 62 searching for a temperature difference between measured values of the first temperature sensor 58 and the second temperature sensor 60; and a temperature measurement control section 64 searching for a temperature of the workpiece W by controlling the temperature control means 56 so that the temperature difference may become zero based on the temperature difference output from the temperature difference detecting section 62. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a temperature measuring device for an object to be processed such as a semiconductor wafer, a mounting table structure and a heat treatment device using the same.

In general, in order to manufacture a semiconductor integrated circuit, a target object such as a semiconductor wafer is repeatedly subjected to various heat treatments such as a film formation process, an etching process, an oxidation diffusion heat treatment, an annealing process, a modification process, and a crystallization process. The desired integrated circuit is formed. When performing various processes as described above, a processing gas required corresponding to the type of the process, for example, a film forming gas in the case of a film forming process, an ozone gas or the like in the case of a reforming process, In the case of crystallization treatment, an inert gas such as N ₂ gas or O ₂ gas is introduced into the processing vessel.

  For example, in the case of a single wafer type heat treatment apparatus that performs heat treatment on a semiconductor wafer one by one, for example, a mounting table with a built-in resistance heater is installed in a processing container that can be evacuated. A predetermined processing gas is allowed to flow while a semiconductor wafer is placed on the upper surface, and various heat treatments are performed on the wafer under predetermined process conditions.

  By the way, when performing the various heat treatments described above, it is required to strictly control the temperature of the semiconductor wafer during the heat treatment in order to perform the heat treatment as desired. For example, when forming a thin film by thermal CVD (Chemical Vapor Deposition) as a heat treatment, if the temperature of the semiconductor wafer is not strictly controlled as described above, the designed film thickness cannot be obtained or the desired film quality characteristics can be obtained. It will not be possible.

  Therefore, as a means for measuring the temperature of the semiconductor wafer during the heat treatment, for example, a radiation thermometer is provided on a mounting table on which the semiconductor wafer W is placed and a shower head for supplying a processing gas, and the wafer is used by this radiation thermometer. Heat treatment is performed by adjusting the wafer temperature while measuring the temperature (Patent Document 1, etc.).

JP 2004-319537 A

  By the way, the above-mentioned radiation thermometer obtains the temperature by using the radiance from the wafer surface. However, the emissivity of the wafer changes greatly depending on the wafer temperature. For example, if a thin film or the like adheres to the surface of the wafer, the emissivity changes, which makes it difficult to perform highly accurate temperature measurement.

  The present invention has been devised to pay attention to the above problems and to effectively solve them. An object of the present invention is to provide a temperature measurement device that can perform temperature measurement at low cost and high accuracy, a mounting table structure and a heat treatment device using the temperature measurement device.

  The invention according to claim 1 is a temperature measurement device provided in a mounting table on which an object to be processed to be subjected to a predetermined heat treatment is placed, and is embedded in the mounting table along the thickness direction of the mounting table. In addition, a probe main body whose upper end is exposed on the surface, temperature adjusting means capable of heating and / or cooling the lower end of the probe main body, and a first temperature for measuring the temperature of the upper end of the probe main body A sensor, a second temperature sensor for measuring a temperature of a lower end portion of the probe body, a temperature difference detecting unit for obtaining a temperature difference between measured values of the first temperature sensor and the second temperature sensor, and the temperature A temperature measurement control unit that obtains the temperature of the object to be processed by controlling the temperature control means so that the temperature difference becomes zero based on the temperature difference output from the difference detection unit. With a temperature measuring device That.

  Thus, in order to measure the temperature of the object to be processed, the upper end of the probe body is provided close to or in contact with the object to be processed, and the temperature adjusting means is provided at the lower end part between the upper and lower ends of the probe body. Since the temperature of the object to be processed is obtained by controlling the temperature adjusting means so that the temperature difference between the two becomes zero, the apparatus itself can be made inexpensive and highly accurate temperature measurement can be performed.

In this case, for example, as described in claim 2, the upper end of the probe main body is configured to come into contact with the back surface of the object to be processed.
For example, as described in claim 3, the upper end of the probe main body is configured to be slightly separated from the back surface of the object to be processed.
Further, for example, as described in claim 4, the temperature adjusting means includes a thermoelectric conversion element.
Further, for example, as described in claim 5, the temperature adjusting means is a combination of a heating part and a cooling part.

For example, as described in claim 6, the heating section is formed of a heater or a heating laser element.
For example, as described in claim 7, the probe main body is accommodated in an accommodation hole formed in the surface of the mounting table.
Further, for example, as described in claim 8, a reflective film is coated on the surface of the probe main body and / or the inner surface of the receiving hole.

Further, for example, as described in claim 9, the probe main body is embedded in a state in which the probe main body has a heat insulating structure.
Further, for example, as described in claim 10, the accommodation hole is filled with a heat insulating material.
For example, as described in claim 11, the inside of the accommodation hole is in a vacuum state.
For example, as described in claim 12, the probe main body is made of one material selected from the group consisting of silicon, aluminum, aluminum alloy, quartz, and a ceramic material.

Further, for example, as described in claim 13, one of the first and second temperature sensors and the probe main body form a thermocouple.
Further, for example, as described in claim 14, the probe main body is also used as a push-up pin provided on the mounting table for raising and lowering the object to be processed.

A fifteenth aspect of the present invention is a mounting table structure including the temperature measuring device according to any one of the first to fourteenth aspects.
According to a sixteenth aspect of the present invention, there is provided a heat treatment apparatus for performing a predetermined heat treatment on an object to be processed, a processing container that can be evacuated, the mounting table structure according to claim 15, and the mounting table structure described above. Heating means for heating the object to be processed, gas introducing means for introducing a predetermined gas into the processing container, and the measured value measured by the temperature measuring device provided in the mounting table structure. A heat treatment apparatus comprising: a body temperature control unit for controlling a body temperature.

According to the temperature measuring device, the mounting table structure and the heat treatment device using the temperature measuring device according to the present invention, the following excellent operational effects can be exhibited.
When performing a predetermined heat treatment on the object to be processed placed on the mounting table structure, the upper end of the probe main body is provided close to or in contact with the object to be processed to measure the temperature of the object to be processed. The temperature of the workpiece is obtained by controlling the temperature control means so that the temperature difference between the upper and lower ends of the probe body becomes zero with the temperature control means provided in the device, so that the device itself can be made inexpensive. Temperature measurement can be performed with high accuracy.

An embodiment of a temperature measuring device, a mounting table structure, and a heat treatment device according to the present invention will be described below in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional configuration diagram showing a heat treatment apparatus according to the present invention, FIG. 2 is a configuration diagram showing a temperature measurement device provided in the mounting table structure, and FIG. 3 is a plan view taken along the line AA in FIG. It is.

  As shown in the figure, this heat treatment apparatus 2 has a processing vessel 4 made of aluminum or aluminum alloy, for example, whose inside is substantially circular. A shower head unit 6 serving as a gas introduction unit is provided on the ceiling of the processing container 4 to introduce a predetermined gas required, for example, a film forming gas as a processing gas. The processing gas is jetted toward the processing space S from a large number of gas injection holes provided in.

  In the shower head portion 6, gas diffusion chambers 12A and 12B divided into two hollow shapes are formed. After the processing gas introduced therein is diffused in the plane direction, each gas diffusion chamber 12A is formed. , 12B are blown out from the respective gas injection holes 10A, 10B communicated with each other. The entire shower head portion 6 is made of, for example, a nickel alloy such as nickel or Hastelloy (registered trademark), aluminum, or an aluminum alloy. The shower head unit 6 may have one gas diffusion chamber. A sealing member 14 made of, for example, an O-ring or the like is interposed at the joint between the shower head 6 and the upper end opening of the processing container 4 so that the airtightness in the processing container 4 is maintained. ing.

  In addition, a loading / unloading port 16 for loading / unloading a semiconductor wafer W as an object to be processed into / from the processing container 4 is provided on the side wall of the processing container 4, and the loading / unloading port 16 can be opened and closed in an airtight manner. A gate valve 18 is provided.

  An exhaust space 22 is formed at the bottom 20 of the processing container 4. Specifically, a large opening 24 is formed in the central portion of the container bottom 20, and a cylindrical partition wall 26 having a bottomed cylindrical shape extending downward is connected to the opening 24, and the above described inside An exhaust space 22 is formed. A mounting table structure 29 is provided on the bottom 28 of the cylindrical partition wall 26 that partitions the exhaust space 22 for mounting a semiconductor wafer W as an object to be processed. Specifically, the mounting table structure 29 has a mounting table 32 bonded and fixed to the upper end of a cylindrical column 30 made of, for example, transparent quartz glass or ceramic material.

  The opening 24 of the exhaust space 22 is set to be smaller than the diameter of the mounting table 32, and the processing gas flowing down outside the peripheral edge of the mounting table 32 circulates below the mounting table 32 to open the opening 24. To flow into. An exhaust port 34 is formed in the lower side wall of the cylindrical partition wall 26 so as to face the exhaust space 22. An exhaust pipe 36 having an exhaust pump (not shown) is provided in the exhaust port 34. It is connected so that the atmosphere in the processing container 4 and the exhaust space 22 can be exhausted.

  In the middle of the exhaust pipe 36, a pressure regulating valve (not shown) capable of opening degree control is provided. By automatically adjusting the valve opening degree, the inside of the processing container 4 is provided. The pressure can be maintained at a constant value or can be rapidly changed to a desired pressure. In this case, the pressure in the processing container 4 is arbitrarily set from a low vacuum to a high vacuum according to the processing mode.

  The mounting table 32 is made of a ceramic material such as aluminum nitride (AlN). The mounting table 32 includes a heater 38 made of, for example, a carbon heater embedded in a predetermined pattern shape as a heating unit, and a semiconductor wafer as an object to be processed is provided on the upper surface of the mounting table 32. W can be placed. The heater 38 is connected to a power supply line (not shown) disposed in the support column so that it can be supplied while controlling the electric power. The heater 38 is divided into, for example, an inner zone and an outer zone that concentrically surrounds the outer zone, and the power can be controlled individually for each zone.

  The mounting table 32 is formed with a plurality of, for example, three pin insertion holes 41 penetrating in the vertical direction (only two are shown in FIG. 1), and can be moved up and down in each of the pin insertion holes 41. A push-up pin 42 inserted in a loosely fitted state is arranged. A push-up ring 44 made of a ceramic such as alumina having a circular ring shape is disposed at the lower end of the push-up pin 42, and the lower end of each push-up pin 42 is on the push-up ring 44. The arm portion 45 extending from the push-up ring 44 is connected to a retracting rod 46 provided through the container bottom portion 20, and the retracting rod 46 can be moved up and down by an actuator 48.

  As a result, the push-up pins 42 are projected and retracted upward from the upper ends of the pin insertion holes 41 when the wafer W is transferred. In addition, an extendable bellows 50 is interposed in a through-hole portion of the bottom of the retractable rod 46 of the actuator 48 so that the retractable rod 46 can be moved up and down while maintaining the airtightness in the processing container 4. ing.

  The mounting table structure 29 is provided with the temperature measuring device 52 according to the present invention. As shown in FIG. 2, the temperature measuring device 52 includes a probe main body 54 embedded in the mounting table 32, a temperature adjusting means 56 for heating or cooling the lower end portion of the probe main body 54, and the probe main body 54. Each of the first temperature sensor 58 for measuring the temperature of the upper end of the first temperature sensor 58, the second temperature sensor 60 for measuring the temperature of the lower end of the probe main body 54, and the first and second temperature sensors 58, 60. A temperature difference detection unit 62 that obtains a temperature difference between measured values and a temperature measurement control unit 64 that obtains the temperature of the semiconductor wafer W by controlling the temperature adjusting means 58 so that the temperature difference becomes zero. It is configured.

  Specifically, the probe main body 54 is formed into a small cylindrical shape or a prismatic shape with a material having a relatively good thermal conductivity and a low risk of contamination to the wafer W, such as an aluminum alloy. As shown also in FIG. 3, in the example of illustration, it shape | molds in the column shape. The probe main body 54 is accommodated in an accommodation hole 66 formed along the thickness direction on the upper surface side which is the surface of the mounting table 32. The length of the probe main body 54 is, for example, in the range of about 5 to 20 mm, the diameter is in the range of about 2 to 8 mm, and it is desirable that the length is as small as possible in order to increase the thermal response.

  As the material of the probe main body 54, one material selected from the group consisting of silicon, aluminum, aluminum alloy, quartz, and ceramic material can be used, but this point is another embodiment described below. The same is true for. The ceramic material is, for example, alumina, aluminum nitride, silicon carbide or the like.

  The probe main body 54 is embedded in the accommodation hole 66 along the thickness direction of the mounting table 32 in a state of having a heat insulating structure with respect to the periphery thereof. That is, the inner surface of the accommodation hole 66 is coated with a reflective film 68 for heat reflection. Similarly, the entire surface except for the upper end surface of the probe body 54 is coated with a reflective film 70 for heat reflection. Yes. A space between the inner surface of the accommodation hole 66 and the periphery of the probe main body 54 is filled with a heat insulating material 72 made of, for example, porous quartz or the like, and the probe main body 54 and the mounting table 32 are insulated. Thus, heat conduction is unlikely to occur between the two.

  Here, the probe main body 54 is not completely embedded, but the upper end portion of the probe main body 54 is exposed on the surface of the mounting table 32, and the upper end portion faces the lower surface of the wafer W. Thus, it is in a state of being very close to this lower surface. Actually, the upper surface of the probe main body 54 and the lower surface of the wafer W are almost in contact with each other.

  The first temperature sensor 58 is attached to the side surface of the upper end portion of the probe main body 54, and the second temperature sensor 60 is attached to the side surface of the lower end portion of the probe main body 54. The first and second temperature sensors 58 and 60 and the temperature difference detection unit 62 are connected by two sets of wiring lines 74 and 76, respectively. Each measurement value measured by the temperature sensors 58 and 60 is input to the temperature difference detection unit 62. As the first and second temperature sensors 58 and 60, for example, thermocouples can be used, respectively.

  The temperature adjusting means 56 is attached to the lower end portion of the probe main body 54. The temperature control means 56 is composed of a thermoelectric conversion element 78 such as a Peltier element, for example, and the temperature control means 56 and the temperature measurement control unit 64 are connected by wiring lines 80 and 82. The temperature measurement control unit 64 includes a power source, a computer, and the like inside, and controls the temperature adjustment means 56 so that the temperature difference output from the temperature difference detection unit 62 becomes zero. Specifically, here, the temperature adjusting means 56 is composed of a thermoelectric conversion element 78, so that heating and cooling can be selectively performed on the lower end portion of the probe main body 54 by controlling the direction of current. It can be done.

  Here, the measured value of the first or second temperature sensor 58, 60 when the output from the temperature difference detecting unit 62 becomes “zero” is set as the temperature value of the wafer W, and the temperature measurement control unit 64 is to be monitored. It outputs to the process body temperature control part 84 (refer FIG. 1). In this case, theoretically, the measured values of the first temperature sensor 58 and the second temperature sensor 60 are the same temperature value.

  Here, referring back to FIG. 1, based on the wafer temperature value output from the temperature measurement controller 64, the workpiece temperature controller 84 increases or decreases the power to the heater 38 to control the wafer temperature. The wafer temperature is set in advance.

  Control of the overall operation of the heat treatment apparatus 2 configured in this way, for example, supply start and stop of each gas, flow rate control, process pressure control, wafer temperature control, etc., is an apparatus control unit comprising a computer or the like The temperature measurement control unit 64, the object temperature control unit 84, and the like operate under the control of the device control unit 88. A computer-readable program necessary for operating the device control unit 88 is stored in the storage medium 90. The storage medium 90 includes, for example, a flexible disk, a CD (Compact Disc), a CD-ROM, a hard disk, a flash memory, or a DVD.

Next, the operation of the heat treatment apparatus configured as described above will be described.
First, the unprocessed semiconductor wafer W is loaded into the processing container 4 through the gate valve 18 and the loading / unloading port 16 which are held by a transfer arm (not shown) and opened, and this wafer W is pushed up. After being transferred to the pins 42, the push-up pins 42 are lowered to place the wafer W on the upper surface of the mounting table 32 and support it.

  Next, for example, when a film forming process is performed as a heat treatment, each film forming gas is supplied to the shower head unit 6 while controlling the flow rate, and the gas is injected from the gas injection holes 10A and 10B. Introduce to S. Then, by continuously driving a vacuum pump (not shown) provided in the exhaust pipe 36, the atmosphere in the processing container 4 and the exhaust space 22 is evacuated, and the valve opening of the pressure regulating valve is adjusted. Thus, the atmosphere of the processing space S is maintained at a predetermined process pressure.

  At the same time, electric power is supplied from the workpiece temperature control unit 84 to the heater 38 which is a heating unit provided on the mounting table 32, and the wafer W passes through the mounting table 32 at a predetermined process temperature, for example, several times. It will be heated to about 100 ° C. In this way, a predetermined thin film is formed on the surface of the wafer W by heat treatment.

  In the course of the film forming process, the temperature of the wafer W is accurately detected by the temperature measuring device 52 according to the present invention, and the detected value is fed back to the processing object temperature control unit 84. High-precision temperature control is performed. Specifically, heat is exchanged between the upper end surface of the probe main body 54 of the temperature measuring device 52 and the back surface of the wafer W facing the upper end surface so that both members are in temperature equilibrium, and In the probe main body 54 itself, heat is transferred inside so that there is no temperature difference between the upper and lower ends. Here, the temperatures of the upper and lower ends of the probe main body 54 are measured by the first temperature sensor 58 and the second temperature sensor 60, respectively, and input to the temperature difference detection unit 62 via the wiring lines 74 and 76, respectively. Yes.

  The temperature difference detection unit 62 compares the two measured values and outputs the temperature difference to the temperature measurement control unit 64. The temperature measurement control unit 64 drives a thermoelectric conversion element 78 which is a temperature adjusting means 56 provided at the lower end of the probe main body 54 so that the temperature difference becomes “zero”. For example, the thermoelectric conversion element 78 operates to heat the lower end portion when the temperature of the lower end portion is low with respect to the upper end portion of the probe main body 54, and conversely, when the temperature of the lower end portion is high, the lower end portion is moved. Operates to cool. This selection of heating and cooling is performed by changing the direction of the current flowing through the thermoelectric conversion element 78 such as a Peltier element.

  In this way, the temperature of the upper and lower ends of the probe main body 54 is always the same, that is, operates so as to be balanced, and the measured value of the first temperature sensor 58 or the second temperature sensor 60 is the wafer temperature. It becomes. The wafer temperature is output to the object temperature controller 84 via the temperature measurement controller 64.

  Here, the relationship between the temperature of the probe main body 54 and the temperature of the wafer W will be described in detail. In FIG. 2, the temperature of the wafer W is now T, the temperature of the upper end portion P1 of the probe body 54 is T1, and the temperature of the lower end portion P2 is T2.

As described above, the temperature measurement control unit 64 controls the lower end portion P2 of the probe main body 54 to be heated or cooled so that the temperature difference ΔT between the temperature T1 and the temperature T2 becomes “zero”. .
ΔT = T1-T2
When “ΔT = T1−T2 = 0”, “T1 = T2 = T”. In actual operation, when “| ΔT | = | T1−T2 | <ε,“ T1 = T2 = T ”is set, and this“ ε ”is very small, for example, about 10 ⁻³ ° C.

  In this case, since the heat capacity of the probe main body 54 and the like is very small with respect to the wafer W, it does not adversely affect the wafer W thermally. As described above, even when the lower surface of the wafer W and the upper end surface of the probe main body 54 are not in contact with each other, the temperature of the wafer W can be accurately measured.

  Further, here, a heat insulating material 72 is provided around the probe main body 54, and a reflection film 70 that reflects heat is formed on the surface excluding the upper end surface of the probe main body 54. In addition, since the reflection film 68 that reflects heat is formed to have a heat insulating structure as a whole, the transfer of heat between the mounting table 32 and the probe main body 54 can be suppressed as much as possible. The temperature of the wafer W can be measured with higher accuracy.

  Further, since the probe main body 54, the first and second temperature sensors 58, 60, and the temperature adjusting means 56 can be integrated by microfabrication, they can be manufactured very inexpensively as a whole.

  As described above, in order to measure the temperature of the semiconductor wafer W as the object to be processed, the upper end portion of the probe main body 54 is provided close to or in contact with the object to be processed, and the temperature adjusting means 56 is provided at the lower end portion. Since the temperature of the object to be processed is determined by controlling the temperature adjusting means 56 so that the temperature difference between the upper and lower ends of the probe main body 54 becomes zero, the temperature of the apparatus itself can be reduced and the temperature is high. Measurements can be made.

[Modified Embodiment]
Next, a modified embodiment of the temperature measuring device will be described.
<First and second modified embodiments>
First, the first and second modified embodiments will be described. FIG. 4 is a partially enlarged view showing first and second modified embodiments of the temperature measuring device of the present invention. FIG. 4A shows a first modified embodiment, and FIG. 4B shows a second modified embodiment. In FIG. 4, the same components as those shown in FIGS. 1 to 3 are denoted by the same reference numerals, and the description thereof is omitted.

  In the case of the first modified embodiment shown in FIG. 4A, the upper end portion of the probe main body 54 protrudes slightly above the upper surface of the mounting table 32, for example, by about 0 to 500 μm. The upper end surface of the probe main body 54 and the surface (lower surface) of the wafer W are always in contact with each other. According to this, not only can the same effect as the embodiment shown in FIG. 2 be exhibited, but also the heat conduction between the wafer W and the probe main body 54 is performed with little resistance, and accordingly, the temperature of the wafer W is correspondingly increased. The accuracy of measurement can be further improved.

  Regarding the second modified embodiment shown in FIG. 4B, in the case of the embodiment shown in FIG. 2, the heat insulating material 72 was filled in the accommodation hole 66. In the second modified embodiment, a heat insulating material is not put in the accommodation hole 66 and the inside thereof is in a vacuum state, and the upper end opening is hermetically sealed by a seal member 92 that does not contaminate the wafer W. ing. As this seal member 92, for example, alumina, quartz, or the like can be used. Note that the characteristics of the first modified embodiment may be applied to the second modified embodiment. In the case of the second modified embodiment, the same operational effects as those of the embodiment shown in FIG. 2 can be exhibited.

<Third Modified Embodiment>
Next, a third modified embodiment will be described. FIG. 5 is a partially enlarged view showing a third modified embodiment of the temperature measuring device of the present invention. In FIG. 5, the same components as those shown in FIGS. 1 to 3 are denoted by the same reference numerals, and the description thereof is omitted.

  In each of the previous embodiments, the thermoelectric conversion element 78 capable of selectively performing heating and cooling with one element is provided as the temperature adjusting means 56. Instead, this third modified embodiment is provided. Then, a separate heating unit 96 and cooling unit 98 are provided in combination, and the heating unit 96 and the cooling unit 98 are selectively operated by the temperature measurement control unit 64, whereby the probe main body. The heating and cooling of the lower end portion of 54 can be selectively performed. The heating unit 96 and the cooling unit 98 are connected to the temperature control unit 64 via wiring lines 97 and 99, respectively. In this case, a small resistance heater or the like can be used as the heating unit 96, and a Peltier element or the like can be used as the cooling unit 98, for example.

  Note that the characteristics of the first modified embodiment may be applied to the third modified embodiment. In the case of the second modified embodiment, the same operational effects as those of the embodiment shown in FIG. 2 can be exhibited.

<Fourth Modified Embodiment>
Next, a fourth modified embodiment will be described. FIG. 6 is a partially enlarged view showing a fourth modified embodiment of the temperature measuring device of the present invention. In FIG. 6, the same components as those shown in FIGS. 1 to 3 are denoted by the same reference numerals, and the description thereof is omitted.

  In the third modified embodiment shown in FIG. 5, a small resistance heater or the like is used as the heating means 96, but instead of this, a heating laser element 100 that generates laser light L is provided. .

  As shown in FIG. 6, a laser hole 102 is formed in the lower part of the mounting table 32 so that the lower surface of the probe main body 54 is exposed. A laser element 100 is arranged. The laser element 100 is connected to the temperature measurement control unit 64 via the wiring line 103, and the lower end of the probe main body 54 is heated as necessary by the laser light L emitted from the laser element 100. It has become. In this case, a transparent quartz window 104 is hermetically attached to the lower end opening of the laser hole 102 so that a film forming gas or the like does not enter the laser hole 102. Also in the case of the fourth modified embodiment, the same operational effects as the embodiment shown in FIG. 2 can be exhibited.

<Fifth Modified Embodiment>
Next, a fifth modified embodiment will be described. FIG. 7 is a partially enlarged view showing a fifth modified embodiment of the temperature measuring device of the present invention. In FIG. 7, the same components as those shown in FIGS. 1 to 6 are denoted by the same reference numerals, and the description thereof is omitted.

  In each of the above embodiments, a single body such as an aluminum alloy is used as the probe main body 54. Instead, in the fifth modified embodiment, a thermocouple 110 is used as the probe main body 54. That is, one end of two kinds of different kinds of metals 112A and 112B, which are less likely to be contaminated with respect to the wafer W, are joined, and the other parts are joined via the insulating member 114 to form the thermocouple 110. . In FIG. 7, the junction 116 of the dissimilar metals 112A and 112B serves as a temperature measuring contact, and the temperature measuring contact is positioned at the upper end to measure the temperature of this portion.

  That is, here, the probe main body 54 composed of the thermocouple 110 is also used as the function of the first temperature sensor 58. The wiring 120 from the thermocouple 110 is connected to the temperature difference detection unit 62 so that the temperature of the upper end portion of the probe main body 54 can be measured. In this case, of course, a second temperature sensor 60 is provided at the lower end of the probe main body 54 in order to measure this temperature.

  The probe main body 54 may be provided upside down so that the temperature measuring contact as the joint 116 may be positioned at the lower part. In this case, a first temperature sensor 58 is provided, The two temperature sensors 60 can be dispensed with. Also in the case of the fifth modified embodiment, the same operational effects as those of the embodiment shown in FIG. 2 can be exhibited.

<Sixth Modified Embodiment>
Next, a sixth modified embodiment will be described. FIG. 8 is a partially enlarged view showing a sixth modified embodiment of the temperature measuring device of the present invention. In FIG. 8, the same components as those shown in FIGS. 1 to 7 are denoted by the same reference numerals, and the description thereof is omitted.

  In each of the above embodiments, the probe main body 54 is provided on the mounting table 32. However, the present invention is not limited to this, and the probe main body 54 may be provided above the push-up pin 42 as shown in FIG. Good. Also in the case of the sixth modified embodiment, the same operational effects as those of the embodiment shown in FIG. 2 can be exhibited.

Note that the features of the above embodiments may be used in combination. In order to particularly avoid contamination of the wafer W, a protective film made of, for example, an alumina sprayed film or an alumite may be formed on the surface of the probe main body 54.
Further, the heating means 38 provided on the mounting table 32 may be divided into a plurality of zones, for example, concentrically, and temperature control may be performed for each zone. A probe main body 54 and the like are provided to measure the temperature.

  Furthermore, in each of the embodiments described above, the temperature adjusting unit 56 has a function capable of selectively performing both heating and cooling. However, the present invention is not limited to this, and only the heating unit 96 or the cooling unit 98 is provided. May be provided.

In addition, although the film formation process has been described as an example of the heat treatment here, the present invention is not limited to this, and the present invention is applicable to all heat treatments such as etching treatment, oxidation diffusion heat treatment, annealing treatment, modification treatment, and crystallization treatment. Further, it can be applied to a heat treatment apparatus using plasma.
Although the semiconductor wafer is described as an example of the object to be processed here, the present invention is not limited thereto, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate, and the like.

It is a section lineblock diagram showing the heat treatment apparatus concerning the present invention. It is a block diagram which shows the temperature measuring apparatus provided in the mounting base structure. It is an arrow top view along the AA line in FIG. It is the elements on larger scale which show the 1st and 2nd deformation | transformation embodiment of the temperature measuring apparatus of this invention. It is the elements on larger scale which show the 3rd modification embodiment of the temperature measuring apparatus of this invention. It is the elements on larger scale which show the 4th modification embodiment of the temperature measuring apparatus of this invention. It is the elements on larger scale which show the 5th modification embodiment of the temperature measuring device of this invention. It is the elements on larger scale showing the 6th modification embodiment of the temperature measuring device of the present invention.

Explanation of symbols

2 Heat treatment device 4 Processing vessel 6 Shower head (gas introduction means)
29 mounting table structure 30 support column 32 mounting table 38 heater (heating means)
42 Push-up Pin 52 Temperature Measuring Device 54 Probe Body 56 Temperature Control Means 58 First Temperature Sensor 60 Second Temperature Sensor 62 Temperature Difference Detection Unit 64 Temperature Measurement Control Unit 66 Housing Hole 68, 70 Reflective Film 72 Heat Insulating Material 78 Thermoelectric Conversion Element 84 Object temperature controller 88 Device controller 90 Storage medium 96 Heating part 98 Cooling part 100 Laser element W Semiconductor wafer (object to be processed)

Claims (16)

In the temperature measuring device provided on the mounting table on which the target object to be subjected to predetermined heat treatment is placed,
A probe body embedded in the mounting table along the thickness direction of the mounting table and having an upper end exposed on the surface,
Temperature control means capable of heating and / or cooling the lower end of the probe body;
A first temperature sensor that measures the temperature of the upper end of the probe body;
A second temperature sensor for measuring the temperature of the lower end of the probe body;
A temperature difference detector for obtaining a temperature difference between measured values of the first temperature sensor and the second temperature sensor;
A temperature measurement control unit for determining the temperature of the object to be processed by controlling the temperature control means so that the temperature difference becomes zero based on the temperature difference output from the temperature difference detection unit;
A temperature measuring device comprising: The temperature measuring device according to claim 1, wherein an upper end of the probe main body is configured to contact a back surface of the object to be processed. The temperature measuring device according to claim 1, wherein an upper end of the probe main body is configured to be slightly separated from a back surface of the object to be processed. The temperature measuring device according to any one of claims 1 to 3, wherein the temperature adjusting means is composed of a thermoelectric conversion element. The temperature measuring device according to any one of claims 1 to 3, wherein the temperature adjusting unit is formed of a combination of a heating unit and a cooling unit. The temperature measuring apparatus according to claim 5, wherein the heating unit includes a heater or a heating laser element. The temperature measuring device according to claim 1, wherein the probe main body is housed in a housing hole formed in the surface of the mounting table. The temperature measuring device according to claim 7, wherein a reflection film is coated on a surface of the probe main body and / or an inner surface of the accommodation hole. The temperature measuring device according to claim 1, wherein the probe main body is embedded in a state in which the probe main body has a heat insulating structure. The temperature measuring device according to claim 9, wherein the accommodation hole is filled with a heat insulating material. The temperature measuring device according to claim 9, wherein the inside of the accommodation hole is in a vacuum state. The temperature measuring device according to claim 1, wherein the probe main body is made of one material selected from the group consisting of silicon, aluminum, aluminum alloy, quartz, and ceramic material. The temperature according to any one of claims 1 to 12, wherein one of the first and second temperature sensors and the probe body form a thermocouple. measuring device. The temperature measuring device according to any one of claims 1 to 12, wherein the probe main body is also used as a push-up pin that is provided on the mounting table and moves up and down the object to be processed. A mounting table structure comprising the temperature measuring device according to claim 1. In a heat treatment apparatus for performing a predetermined heat treatment on a workpiece,
A processing vessel made evacuable,
The mounting table structure according to claim 15;
Heating means for heating the object mounted on the mounting table structure;
Gas introduction means for introducing a predetermined gas into the processing container;
An object temperature control unit for controlling the temperature of the object to be processed based on a measurement value measured by a temperature measuring device provided in the mounting table structure;
A heat treatment apparatus comprising:

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