CN108754458B - Chemical vapor deposition machine and alarm method for processing machine - Google Patents
Chemical vapor deposition machine and alarm method for processing machine Download PDFInfo
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- CN108754458B CN108754458B CN201810503740.5A CN201810503740A CN108754458B CN 108754458 B CN108754458 B CN 108754458B CN 201810503740 A CN201810503740 A CN 201810503740A CN 108754458 B CN108754458 B CN 108754458B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a chemical vapor deposition machine and a method for alarming a processing machine, and relates to the technical field of semiconductor manufacturing processes. The chemical vapor deposition machine comprises a base and a conveying device, wherein the conveying device is used for driving a wafer to move towards a direction close to or far away from the base so as to enable the wafer to be close to the base and carry out film forming reaction on the base, or enable the wafer to be far away from the base. When the machine table triggers an alarm, the chemical vapor deposition machine table stops working, and the conveying device lifts the wafer to keep the wafer separated from the base; and releasing the alarm, and returning the wafer to the base by the conveying device, so that the chemical vapor deposition machine resumes working. The chemical vapor deposition machine and the alarm method of the processing machine can prevent the wafer from being continuously heated by the high-temperature base after the alarm is triggered by the machine, and prevent residual gas in the reaction cavity from carrying out nucleation reaction on the surface of the wafer to gradually form defects, so that the wafer is finally scrapped.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a chemical vapor deposition machine and a method for alarming a processing machine.
Background
Chemical Vapor Deposition (CVD) is a process of controlling the nucleation growth of a nanoparticle film by controlling factors such as reaction pressure, gas flow rate, substrate material temperature, etc. under conditions of high temperature, plasma or laser assistance, etc. using a vapor phase reaction; or controlling the crystallization process of the amorphous film through film post-treatment, thereby obtaining the film material with the nano structure. Currently, most of the required thin film materials, whether conductor, semiconductor, or dielectric materials, can be prepared by chemical vapor deposition, such as silicon dioxide film, silicon nitride film, polysilicon film, etc., during the chip manufacturing process. The method has the advantages of low deposition temperature, easily controlled film components and thickness, proportional film thickness to deposition time, good uniformity and repeatability, good step coverage, convenient operation and the like. Wherein the low deposition temperature and good step coverage are advantageous for the fabrication of very large scale integrated circuits. Chemical vapor deposition is widely used in the semiconductor industry and is currently the most important thin film deposition method in integrated circuit manufacturing.
The chemical vapor deposition process is a very important link in the semiconductor process, and the conductive thin film layer and the insulating thin film layer are very important for successfully manufacturing a semiconductor device on a silicon substrate. The Vector machine is a mainstream machine of the chemical vapor deposition process, can be almost used for depositing conductive thin film layers and insulating thin film layers with various properties, and is very widely applied. In the process of wafer transmission or deposition, an abnormal alarm is given out by a machine, the program is stopped, the wafer stays on the base in the reaction cavity, the base continues to heat the wafer, the residual gas in the reaction cavity carries out nucleation reaction on the surface of the wafer, the defect is gradually formed, the longer the wafer stays in the reaction cavity, the higher the probability of defect formation is, and finally the wafer is scrapped.
Disclosure of Invention
The invention aims to provide a chemical vapor deposition machine and a method, which can prevent a program from stopping after an abnormal alarm happens to the chemical vapor deposition machine in the deposition process, a wafer stays on a base in a reaction cavity, and residual gas in the reaction cavity carries out nucleation reaction on the surface of the wafer to gradually form defects and finally cause the wafer to be scrapped.
In order to achieve the above object, the present invention provides a chemical vapor deposition apparatus, comprising a base and a conveying device, wherein the conveying device is used for driving a wafer to move toward or away from the base, so that the wafer approaches the base and performs a film forming reaction on the base, or the wafer is away from the base.
Optionally, the conveying device includes a support and a carrying component, the carrying component is connected to one end of the support, the carrying component is used for carrying the wafer, and the support can move linearly along the extending direction of the support to drive the carrying component to move towards a direction close to or away from the base.
Optionally, the number of the bases is multiple, and the conveying device is further configured to drive the wafer to move, so that the wafer moves from above one of the bases to above the other base.
Optionally, the conveying device includes a support and a carrying component, the carrying component is connected to one end of the support, the carrying component is used for carrying the wafer, the support can move linearly along an extending direction of the support to drive the carrying component to move toward a direction close to or away from the susceptors, and the support can rotate to drive the carrying component to move the carrying component from above one of the susceptors to above the other susceptors.
Optionally, the number of the bearing parts is multiple, each bearing part is connected with one end of the support, and the support drives the multiple bearing parts to rotate synchronously when rotating.
Optionally, the number of the bearing parts is 4, the number of the bases is 4, the 4 bearing parts are symmetrically distributed about the bracket, and the 4 bases are symmetrically distributed about the bracket.
Optionally, the carrying device is a tray.
The invention also provides a method for processing the alarm of the machine, wherein the machine is the chemical vapor deposition machine described in the previous section, and the method for processing the alarm of the machine comprises the following steps:
s1: the chemical vapor deposition machine triggers an alarm, and the chemical vapor deposition machine suspends working;
s2: the conveying device lifts the wafer to enable the wafer to be separated from the base;
s3: and releasing the alarm, and returning the wafer to the base by the conveying device, so that the chemical vapor deposition machine resumes working.
Optionally, the conveying device includes a support and a carrying component, the carrying component is connected to one end of the support, the carrying component is used for carrying the wafer, and the support can move linearly along the extending direction of the support to drive the carrying component to move towards a direction close to or far away from the base;
the S2 specifically includes: the support moves linearly along the extension direction of the support to drive the bearing part to move towards the direction far away from the base, so that the wafer is separated from the base;
the S3 specifically includes: and releasing the alarm, wherein the support linearly moves along the extension direction of the support to drive the bearing part to move towards the direction close to the base, the wafer is returned to the base, and the chemical vapor deposition machine resumes operation.
Optionally, the number of the susceptors is multiple, the conveying device includes a support and multiple bearing members, each bearing member is connected to one end of the support, the multiple bearing members are used for bearing one wafer respectively, the support can move linearly along an extending direction of the support to drive the multiple bearing members to move synchronously in a direction close to or away from the susceptors, and the support can rotate to drive the multiple bearing members to rotate synchronously;
the S2 specifically includes: the support moves linearly along the extension direction of the support to drive the bearing parts to synchronously move towards the direction far away from the base, so that the wafers are separated from the corresponding base;
the S3 specifically includes: and releasing the alarm, wherein the support moves linearly along the extension direction of the support to drive the bearing parts to synchronously move towards the direction close to the bases, the wafers are conveyed back to the corresponding bases, and the chemical vapor deposition machine is recovered to work.
Compared with the prior art, in the alarm method of the chemical vapor deposition machine and the processing machine, when the machine triggers an abnormal alarm, the conveying device immediately lifts all wafers, so that the wafers and the base are kept separated, the high-temperature base is prevented from continuously heating the wafers, and residual gas in the reaction cavity is prevented from carrying out nucleation reaction on the surfaces of the wafers to gradually form defects.
Drawings
FIG. 1 is a schematic diagram of wafer and susceptor positions during an alarm of a CVD tool.
FIG. 2 is a schematic diagram of a nucleation reaction of gas on a wafer surface.
FIG. 3 is a schematic diagram of wafer and susceptor positions during a machine alarm in accordance with one embodiment of the present invention.
FIG. 4 is a simplified diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 5 is a simplified diagram of a susceptor structure of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Wherein: 10-wafer, 20-susceptor, 21-susceptor position 1, 22-susceptor position 2, 23-susceptor position 3, 24-susceptor position, 30-transport, 31-carrier, 32-support, 41-left vacuum lock, 42-right vacuum lock, 50-heating source.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a schematic diagram showing the positions of a wafer 10 and a susceptor 20 when an alarm occurs in a chemical vapor deposition machine, as shown in fig. 1, when the chemical vapor deposition machine alarms, the machine stops working, and according to the setting of a plasma enhancement program, the temperature of the susceptor 20 is 350 to 400 ℃, and at this time, the wafer 10 still stays on the susceptor 20 in a reaction chamber. Fig. 2 is a schematic view of a nucleation reaction of gas on a wafer surface, as shown in fig. 2, residual gas atomic or molecular reactants in the reaction chamber combine to adhere to the wafer surface to form small crystal nuclei, and the nucleation reaction proceeds on the wafer surface, and as the residence time of the wafer in the reaction chamber increases, defects gradually form on the wafer surface, and finally the wafer is scrapped.
In the present embodiment, as shown in fig. 3, the chemical vapor deposition apparatus includes a base 20 and a conveying device 30, wherein the conveying device 30 is configured to drive a wafer 10 to move toward or away from the base 20, so that the wafer 10 approaches the base 20 and performs a film forming reaction on the base 20, or the wafer 10 is away from the base 20. In normal operation, the conveying device 30 is used to drive the wafer 10 to move toward the direction close to the susceptor 20, so that the wafer 10 approaches the susceptor 20 and performs a film forming reaction on the susceptor 20. When the machine generates an abnormal alarm, the program stops, the transmission device 30 drives the wafer 10 to move in the direction away from the susceptor 20, so as to prevent the wafer 10 from continuing to stay on the susceptor 20 in the reaction chamber, the susceptor 20 continues to heat the wafer 10, and residual gas in the reaction chamber performs nucleation reaction on the surface of the wafer 10 to gradually form defects, which finally results in wafer scrapping.
FIG. 3 is a schematic diagram of wafer and susceptor positions during a machine alarm in accordance with one embodiment of the present invention. As an implementation manner of the present invention, as shown in fig. 3, the conveying device 30 includes a bearing component 31 and a bracket 32, the bearing component 31 is connected to one end of the bracket 32, the bearing component 31 is used for bearing the wafer 10, and the bracket 32 can move linearly along an extending direction thereof to drive the bearing component 31 to move toward or away from the base 20.
Fig. 4 is a simplified structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention, as shown in fig. 4, the number of susceptors 20 is plural, and the transfer device 30 is further configured to move the wafer 10 so that the wafer 10 moves from above one of the susceptors 20 to above another of the susceptors 20. Therefore, the chemical vapor deposition machine can simultaneously perform film deposition on a plurality of wafers. FIG. 5 is a simplified diagram of a susceptor structure of a chemical vapor deposition apparatus, as shown in FIG. 5, wherein a heating source 50 is disposed under the susceptor 20. The heating source is used for heating the susceptor 20, and the temperature of the susceptor 20 is set to 350-400 ℃ according to the current plasma enhancement program.
As shown in fig. 4, the conveying device 30 includes a support 32 and a bearing member 31, the support 32 is located at the center of the reaction chamber of the machine, and the support 32 can rotate to drive the bearing member 31 to move from above one of the susceptors 20 to above the other susceptors 20.
As shown in fig. 4, the number of the bearing members 31 is multiple, each bearing member 31 is connected to one end of the bracket 32, and the bracket 32 rotates to drive the bearing members 31 to rotate synchronously so as to drive the bearing members 31 to move from above one of the bases 20 to above the other base 20.
As shown in fig. 4, in the present embodiment, the number of the bearing members 31 is 4, the number of the bases 20 is 4, the 4 bearing members 20 are symmetrically distributed about the bracket 32, and the bases 20 are distributed right below the bearing members 31. It will be understood by those skilled in the art that the number of the load bearing members selected in the present embodiment is not a limitation of the load bearing members, but is merely a preferred embodiment. The number of the bearing parts can also be 2, in which case the bearing parts are distributed up and down symmetrically, or 3, in which case the bearing parts are distributed in the shape of an inverted equilateral triangle.
As shown in fig. 3, the bearing member 31 is a tray. As those skilled in the art will readily appreciate, other types of mechanisms such as electrostatic chucks and the like may also be employed with the carrier member 31.
The present embodiment further provides a method for alarming a processing machine, which uses the chemical vapor deposition machine described in the previous section, and the method for alarming a processing machine includes the following steps:
s1: the chemical vapor deposition machine triggers an alarm, and the chemical vapor deposition machine suspends working;
s2: the conveying device 30 lifts the wafer 10 to keep the wafer 10 and the pedestal 20 separated;
s3: the alarm is released, the transfer device 30 returns the wafer 10 to the susceptor 20, and the CVD machine resumes operation.
In this embodiment, when the machine station alarms, the support 32 moves linearly along the extending direction thereof to drive the carrying component 31 to move in a direction away from the base 20, so that the wafer 10 and the base 20 are kept separated; when the alarm is relieved, the support 32 moves linearly along the extension direction thereof to drive the bearing part 31 to move towards the direction close to the base 20, the wafer 10 is returned to the base 20, and the chemical vapor deposition machine resumes working.
In an embodiment, when the number of the bearing parts 31 and the base 20 is multiple, and the machine station alarms, the support 32 moves linearly along the extending direction thereof to drive the bearing parts 31 to move synchronously in a direction away from the base 20, so that the wafers 10 and the corresponding bases 20 are kept separated; when the alarm is relieved, the support 32 moves linearly along the extending direction thereof to drive the plurality of bearing parts 31 to move synchronously towards the direction close to the base 20, the wafer 10 is returned to the corresponding base 20, and the chemical vapor deposition machine resumes operation.
As shown in fig. 4, the chemical vapor deposition apparatus has only one reaction chamber, the reaction chamber has 4 susceptors 20, the wafer 10 is initially located in the left vacuum lock, the wafer 10 is transferred into the reaction chamber from the left vacuum lock 41 by the transfer arm during the deposition film formation process, then the wafer 10 is driven by the transfer device 30 to rotate clockwise from the first susceptor 21, and returns to the first susceptor 21 through the second susceptor 22, the third susceptor 23 and the fourth susceptor 24, then the wafer is transferred to the right vacuum lock 42 by the transfer arm, and finally the wafer is transferred back to the front wafer opening cassette, and the wafer 10 is deposited on each susceptor 20 after entering the reaction chamber according to the program set time to form a film. After the machine station generates an abnormal alarm in the deposition film forming process, the program stops, the conveying device 30 immediately supports all the wafers, so that the wafers 10 are separated from the base 20, and the residual gas in the reaction chamber is prevented from carrying out nucleation reaction on the surfaces of the wafers to gradually form defects.
In summary, an embodiment of the present invention provides a chemical vapor deposition apparatus and a method for alarming a processing apparatus, wherein after an abnormal alarm occurs in the apparatus during a deposition film formation process, a program is stopped, a transport device immediately lifts up all wafers to separate the wafers from a susceptor, so as to prevent the wafers from staying on the susceptor in a reaction chamber, and residual gas in the reaction chamber performs a nucleation reaction on the surface of the wafers to gradually form defects, which eventually results in wafer scrap.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The chemical vapor deposition machine is characterized by comprising a base and a conveying device, wherein the conveying device is used for driving a wafer to move towards a direction close to or far away from the base so as to enable the wafer to be close to the base and carry out film forming reaction on the base or enable the wafer to be far away from the base;
when the wafer processing device works normally, the conveying device is used for driving the wafer to move towards the direction close to the base;
when the machine table generates an abnormal alarm, the program stops, and the conveying device drives the wafer to move towards the direction far away from the base.
2. A chemical vapor deposition station as claimed in claim 1, wherein the conveyor includes a support and a carrying member, the carrying member is connected to one end of the support, the carrying member is configured to carry the wafer, and the support is capable of moving linearly along the extending direction of the support to drive the carrying member to move toward or away from the susceptor.
3. A chemical vapor deposition apparatus as claimed in claim 1 or claim 2, wherein the number of susceptors is plural, and the transport device is further configured to move the wafer from above one of the susceptors to above another of the susceptors.
4. A chemical vapor deposition station as claimed in claim 3, wherein the conveyor includes a support and a carrying member, the carrying member is connected to one end of the support, the carrying member is configured to carry the wafer, the support is capable of moving linearly along an extending direction thereof to drive the carrying member to move toward or away from the susceptors, and the support is capable of rotating to drive the carrying member to move from above one of the susceptors to above the other susceptor.
5. A chemical vapor deposition station as claimed in claim 4, wherein the number of the bearing members is plural, each bearing member is connected to one end of the support, and the support rotates to drive the plural bearing members to rotate synchronously.
6. A chemical vapor deposition station as set forth in claim 5, wherein the number of said carriers is 4, the number of said susceptors is 4, 4 of said carriers are symmetrically distributed about said support, and 4 of said susceptors are symmetrically distributed about said support.
7. A chemical vapor deposition station as claimed in claim 2, wherein the carrier means is a tray.
8. A method of handling alarms on a chemical vapor deposition machine, wherein the chemical vapor deposition machine is a chemical vapor deposition machine according to any one of claims 1 to 7, the method comprising the steps of:
s1: the chemical vapor deposition machine triggers an alarm, and the chemical vapor deposition machine suspends working;
s2: the conveying device lifts the wafer to enable the wafer to be separated from the base;
s3: and releasing the alarm, and returning the wafer to the base by the conveying device, so that the chemical vapor deposition machine resumes working.
9. The method as claimed in claim 8, wherein the conveyor comprises a support and a carrying member, the carrying member is connected to one end of the support, the carrying member is used for carrying the wafer, and the support can move linearly along the extending direction of the support to drive the carrying member to move towards or away from the susceptor;
the S2 specifically includes: the support moves linearly along the extension direction of the support to drive the bearing part to move towards the direction far away from the base, so that the wafer is separated from the base;
the S3 specifically includes: and releasing the alarm, wherein the support linearly moves along the extension direction of the support to drive the bearing part to move towards the direction close to the base, the wafer is returned to the base, and the chemical vapor deposition machine resumes operation.
10. A method as claimed in claim 8, wherein the number of susceptors is plural, the conveyor includes a support and a plurality of carriers, each of the carriers is connected to one end of the support, the plurality of carriers are used to carry one wafer respectively, the support can move linearly along its extension direction to drive the plurality of carriers to move synchronously toward or away from the susceptors, and the support can rotate to drive the plurality of carriers to rotate synchronously;
the S2 specifically includes: the support moves linearly along the extension direction of the support to drive the bearing parts to synchronously move towards the direction far away from the base, so that the wafers are separated from the corresponding base;
the S3 specifically includes: and releasing the alarm, wherein the support moves linearly along the extension direction of the support to drive the bearing parts to synchronously move towards the direction close to the bases, the wafers are conveyed back to the corresponding bases, and the chemical vapor deposition machine is recovered to work.
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| CN111883456A (en) * | 2020-07-01 | 2020-11-03 | 上海华虹宏力半导体制造有限公司 | Method for improving copper precipitation defect in aluminum wire |
| CN115305461B (en) * | 2022-09-29 | 2023-03-24 | 江苏邑文微电子科技有限公司 | Automatic control method and device for wafer long film under abnormal working condition |
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