CN108754458A - A kind of chemical vapor deposition board and the method for processing board alarm - Google Patents
A kind of chemical vapor deposition board and the method for processing board alarm Download PDFInfo
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- CN108754458A CN108754458A CN201810503740.5A CN201810503740A CN108754458A CN 108754458 A CN108754458 A CN 108754458A CN 201810503740 A CN201810503740 A CN 201810503740A CN 108754458 A CN108754458 A CN 108754458A
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- pedestal
- wafer
- load bearing
- vapor deposition
- chemical vapor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of chemical vapor deposition board and the methods of processing board alarm, are related to semiconductor fabrication process technical field.The chemical vapor deposition board includes pedestal and transmission device, the transmission device is used to drive a wafer to be moved towards the direction closer or far from the pedestal, so that the wafer carries out film formation reaction close to the pedestal and on the pedestal, or make the wafer far from the pedestal.When board, which triggers, alarms, the chemical vapor deposition board break-off, the transmission device lifts wafer, and wafer and pedestal is made to keep separation；Alarm is released, the transmission device passes wafer on pedestal back, and chemical vapor deposition board is resumed work.After the chemical vapor deposition board and the method for processing board alarm can prevent board triggering alarm, high temperature pedestal continues to heat wafer, prevents the residual gas in reaction chamber from crystal column surface at nuclear reaction, gradually form defect, eventually lead to wafer loss.
Description
Technical field
The present invention relates to semiconductor fabrication process technical field, especially a kind of chemical vapor deposition board and processing board
The method of alarm.
Background technology
Chemical vapor deposition (CVD) is to utilize gas phase reaction, is controlled under the conditions ofs high temperature, plasma or laser assisted etc. anti-
The factors such as air pressure, airflow rate, substrate material temperature are answered, to control the nucleating growth process of nanoparticle thin film；Or it is logical
Cross film post-processing, control the crystallization process of noncrystal membrane, to obtain nanostructure thin-film material method.Currently,
In chip manufacturing proces, most of required thin-film material, whether conductor, semiconductor or dielectric material, can use and change
Vapor deposition is learned to prepare, such as silicon dioxide film, silicon nitride film, polysilicon film.It has deposition temperature it is low, thin film composition and
Thickness is easily-controllable, and film thickness is directly proportional to deposition time, uniformity with it is reproducible, Step Coverage is good, it is easy to operate the advantages that.
Wherein deposition temperature is low and the good manufacture to super large-scale integration of Step Coverage is highly beneficial.CVD method is half
It is widely used in conductor industry, it is most important thin-film deposition method in current integrated circuit production process.
Chemical vapor deposition method is a very important link, conductive membrane layer and insulation film in semiconductor technology
Can layer most important for it successfully produce semiconductor devices on a silicon substrate.Vector boards are chemical vapor deposition works
A kind of mainstream board of skill, almost can be used for depositing the conductive membrane layer and insulating thin layer of various properties, is widely used
It is general.In wafer transmission or deposition process, board is abnormal alarm, and formula stops, and wafer rests on the pedestal in reaction chamber
On, pedestal continues to heat wafer, and the residual gas in reaction chamber carries out, at nuclear reaction, gradually forming defect in crystal column surface, brilliant
Circle residence time in reaction chamber is more long, and the probability for forming defect is higher, eventually leads to wafer loss.
Invention content
The purpose of the present invention is to provide a kind of chemical vapor deposition board and methods, prevent in deposition process, chemistry
After vapor deposition board is abnormal alarm, formula stops, and wafer rests on the pedestal in reaction chamber, the residual in reaction chamber
Gas in crystal column surface at nuclear reaction, gradually form defect, eventually lead to wafer loss.
In order to achieve the above object, the present invention provides a kind of chemical vapor deposition boards, which is characterized in that including pedestal
And transmission device, the transmission device is used to drive a wafer to be moved towards the direction closer or far from the pedestal, so that described
Wafer carries out film formation reaction close to the pedestal and on the pedestal, or makes the wafer far from the pedestal.
Optionally, the transmission device includes holder and load bearing component, and one end of the load bearing component and the holder connects
It connects, the load bearing component can extend along direction linear motion to drive described hold for carrying the wafer, the holder
Component is carried to move towards the direction closer or far from the pedestal.
Optionally, the number of susceptors is multiple, and the transmission device is additionally operable to drive the wafer movement, so that described
Wafer top from one of pedestal upper direction to another pedestal.
Optionally, the transmission device includes holder and load bearing component, and one end of the load bearing component and the holder connects
It connects, the load bearing component can extend along direction linear motion to drive described hold for carrying the wafer, the holder
Carry component towards closer or far from the pedestal direction move, and the holder can rotation to drive the load bearing component institute
State load bearing component from one of pedestal upper direction to another pedestal top.
Optionally, the quantity of the load bearing component is multiple, and each load bearing component connects with one end of the holder
It connects, when holder rotation drives the multiple load bearing component to rotate synchronously.
Optionally, the quantity of the load bearing component is 4, and the quantity of the pedestal is 4, and 4 load bearing components close
It is symmetrical in the holder, and 4 pedestals are symmetrical about the holder.
Optionally, the bogey is pallet.
The present invention also provides a kind of method of processing board alarm, the board is that the previously described chemical gaseous phase of this section is formed sediment
The method of product board, the processing board alarm includes the following steps：
S1：The chemical vapor deposition board triggering alarm, the chemical vapor deposition board break-off；
S2：The transmission device lifts wafer, and wafer and pedestal is made to keep separation；
S3：Alarm is released, the transmission device passes wafer on pedestal back, and chemical vapor deposition board is resumed work.
Optionally, the transmission device includes holder and load bearing component, and one end of the load bearing component and the holder connects
It connects, the load bearing component can extend along direction linear motion to drive described hold for carrying the wafer, the holder
Component is carried to move towards the direction closer or far from the pedestal；
The S2 is specifically included：The holder extends along direction linear motion to drive the load bearing component towards far from institute
The direction movement for stating pedestal, makes the wafer and the pedestal keep separation；
The S3 is specifically included：Alarm is released, the holder extends along direction linear motion to drive the supporting part
Part is moved towards close to the direction of the pedestal, the wafer is transmitted back on the pedestal, the chemical vapor deposition board is extensive
It returns to work work.
Optionally, the quantity of the pedestal is multiple, and the transmission device includes holder and multiple load bearing components, Mei Gesuo
It states load bearing component to connect with one end of the holder, multiple load bearing components for carrying a wafer, institute respectively
Direction linear motion can be extended along to drive multiple load bearing components towards the side closer or far from the pedestal by stating holder
To moving synchronously, and the holder can rotation to drive multiple load bearing components to rotate synchronously；
The S2 is specifically included：The holder extends along direction linear motion to drive multiple load bearing components towards remote
Direction from the pedestal moves synchronously, and multiple wafers and the corresponding pedestal is made to keep separation；
The S3 is specifically included：Release alarm, the holder extends along direction linear motion to drive multiple described hold
It carries component to move synchronously towards the direction close to the pedestal, the wafer is transmitted back on the corresponding pedestal, the chemistry
Vapor deposition board is resumed work.
Compared with prior art, in the method that chemical vapor deposition board provided by the invention and processing board are alarmed, when
When board triggers abnormal alarm, transmission device immediately lifts all wafers, so that wafer and pedestal is kept separation, avoids high temperature base
Seat continues to heat wafer, prevents the residual gas in reaction chamber from carrying out, at nuclear reaction, gradually forming defect in crystal column surface.
Description of the drawings
Wafer and base position schematic diagram when Fig. 1 is a kind of chemical vapor deposition board alarm.
Fig. 2 be gas in crystal column surface at nuclear reaction schematic diagram.
Fig. 3 is wafer and base position schematic diagram when board is alarmed in the present embodiment of the invention.
Fig. 4 is the chemical vapor deposition bench structure schematic diagram that one embodiment of the invention provides.
Fig. 5 is the chemical vapor deposition Machine basement structure diagram that one embodiment of the invention provides.
Wherein：10- wafers, 20- pedestals, 21- base positions 1,22- base positions 2,23- base positions 3,24- pedestals position
It sets, 30- transmission devices, 31- load bearing components, 32- holders, the left vacuum locks of 41-, the right vacuum locks of 42-, 50- heating sources.
Specific implementation mode
The specific implementation mode of the present invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 be a kind of chemical vapor deposition method board occur alarm it is abnormal when, the position of wafer 10 and pedestal 20 shows
It is intended to, as described in Figure 1, when chemical vapor deposition board is alarmed, board break-off is set according to plasma enhancing formula
Fixed, the temperature of pedestal 20 is 350~400 degrees Celsius, and wafer 10 remains on the pedestal 20 in reaction chamber at this time.Fig. 2 is
Gas in crystal column surface at the schematic diagram of nuclear reaction, as described in Figure 2, remaining gas atom or molecule reactant meeting in reaction chamber
Combine, is attached to crystal column surface and forms small crystal nucleus, and carried out at nuclear reaction, as wafer is in reaction chamber in crystal column surface
Residence time increases, and crystal column surface can gradually form defect, eventually lead to wafer loss.
A kind of chemical vapor deposition board is present embodiments provided, as described in Figure 3, chemical vapor deposition board includes pedestal
20 and transmission device 30, the transmission device 30 is used to drive wafer 10 towards the direction movement closer or far from the pedestal 20,
So that the wafer 10 carries out film formation reaction close to the pedestal 20 and on the pedestal 20, or make the wafer 10 far from institute
State pedestal 20.When normal work, transmission device 30 is used to that wafer 10 to be driven to move towards close to the direction of the pedestal 20, so that institute
It states wafer 10 and carries out film formation reaction close to the pedestal 20 and on the pedestal 20.When board is abnormal alarm, formula
Stop, transmission device 30 drives wafer 10 to be moved towards the direction far from the pedestal 20, and wafer 10 is avoided to remain in reaction
On the pedestal 20 of intracavitary, pedestal 20 continues to heat wafer 10, and the residual gas in reaction chamber on 10 surface of wafer be nucleated anti-
It answers, gradually forms defect, eventually lead to wafer loss.
Fig. 3 is wafer and base position schematic diagram when board is alarmed in the present embodiment of the invention.One as the present invention
Kind realization method, as shown in figure 3, the transmission device 30 includes load bearing component 31 and holder 32, the load bearing component 31 and institute
One end connection of holder 32 is stated, for the load bearing component 31 for carrying the wafer 10, the holder 32 being capable of the side of extending along
To linear motion to drive the load bearing component 31 to be moved towards the direction closer or far from the pedestal 20.
Fig. 4 is the chemical vapor deposition bench structure schematic diagram that one embodiment of the invention provides, as shown in figure 4, stating pedestal 20
Quantity is multiple, and the transmission device 30 is additionally operable to drive the wafer 10 to move, so that the wafer 10 is from one of base
Above 20 upper directions of seat to another pedestal 20.Therefore, the chemical vapor deposition board can simultaneously carry out more wafers
Thin-film deposition.Fig. 5 is chemical vapor deposition Machine basement structure diagram, as shown in figure 5, the pedestal 20 is arranged with heating source
50.The heating source is used for heating pedestal 20, is set according to current plasma enhancing formula, and the temperature of pedestal 20 is set as
350~400 degrees Celsius.
As shown in figure 4, the transmission device 30 includes holder 32 and load bearing component 31, the holder 32 is located at the anti-of board
Answer chamber centre, the holder 32 can rotation to drive the load bearing component 31 from 20 upper direction of one of pedestal to another
One 20 top of pedestal.
As shown in figure 4, the quantity of the load bearing component 31 is multiple, each load bearing component 31 with the holder 32
One end connection, when 32 rotation of holder, drives the multiple load bearing component 31 to rotate synchronously, to drive the load bearing component
31 from 20 upper direction of one of pedestal to another 20 top of pedestal.
As shown in figure 4, in the present embodiment, the quantity of the load bearing component 31 is 4, the quantity of the pedestal 20 is 4
A, 4 load bearing components 20 are symmetrical about the holder 32, and the pedestal 20 is being distributed in the load bearing component 31 just
Lower section.It will be appreciated by those skilled in the art that the quantity of the load bearing component selected by the present embodiment is not to supporting part
The restriction of part, and a kind of only preferred embodiment.The quantity of load bearing component can also be 2, right above and below the load bearing component at this time
The quantity of distribution or load bearing component is referred to as 3, and the load bearing component is in the equilateral triangle distribution stood upside down at this time.
As shown in figure 3, the load bearing component 31 is pallet.As those skilled in the art, so it is easy to understand that supporting part
Part 31 can also use other kinds of mechanism such as electrostatic chuck etc..
The present embodiment also provides a kind of method of processing board alarm, using this section chemical vapor deposition machine described previously
The method of platform, the processing board alarm includes the following steps：
S1：The chemical vapor deposition board triggering alarm, the chemical vapor deposition board break-off；
S2：The transmission device 30 lifts wafer 10, and wafer 10 and pedestal 20 is made to keep separation；
S3：Alarm is released, the transmission device 30 passes wafer 10 on pedestal 20 back, and chemical vapor deposition board restores work
Make.
In the present embodiment, when board is alarmed, the holder 32 extends along direction linear motion to drive the carrying
Component 31 is moved towards the direction far from the pedestal 20, and the wafer 10 and the pedestal 20 is made to keep separation；When releasing alarm,
The holder 32 is extended along direction linear motion and is moved with the direction for driving the load bearing component 31 towards the close pedestal 20,
The wafer 10 is transmitted back on the pedestal 20, the chemical vapor deposition board is resumed work.
In embodiment, when the load bearing component 31 and 20 quantity of pedestal are multiple, when board is alarmed, 32 edge of the holder
Its extending direction linear motion is made more with driving multiple load bearing components 31 to be moved synchronously towards the direction far from the pedestal 20
A wafer 10 and the corresponding pedestal 20 keep separation；When releasing alarm, the holder 32 extends along direction straight line
The wafer 10 is transmitted back to by movement with driving multiple load bearing components 31 to be moved synchronously towards close to the direction of the pedestal 20
On the corresponding pedestal 20, the chemical vapor deposition board is resumed work.
As shown in figure 4, being applied to reaction chamber there are one chemical vapor deposition method boards, include in the cavity of reaction chamber
4 pedestals 20,10 initial position of wafer in left vacuum lock, in deposit film forming operation process transmission arm by wafer 10 from left vacuum
Lock 41 comes into cavity, is then driven from first pedestal 21 and is rotated clockwise by transmission device 30, by the second pedestal 22, third
Pedestal 23 and the 4th pedestal 24 return to first pedestal 21, are then transported on arm and wafer is transmitted to right vacuum lock 42 again, finally
Wafer cassette is opened before sending back, wafer 10 enters after cavity deposits film forming on each pedestal 20 according to the formula setting time.It is forming sediment
After board is abnormal alarm in product film forming procedure, formula stops, and transmission device 30 immediately holds up all wafers, makes wafer 10
It is detached with pedestal 20, prevents the residual gas in reaction chamber from carrying out, at nuclear reaction, gradually forming defect in crystal column surface.
To sum up, in a kind of method that one embodiment of the invention provides chemical vapor deposition board and processing board alarm,
After board is abnormal alarm in deposit film forming procedure, formula stops, and transmission device immediately holds up all wafers, make wafer and
Base-separation prevents wafer from resting in reaction chamber on pedestal, and residual gas is carried out in crystal column surface into nuclear reaction in reaction chamber,
Defect is gradually formed, wafer loss is eventually led to.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical scheme of the present invention, to the invention discloses technical solution and
Technology contents make the variations such as any type of equivalent replacement or modification, belong to the content without departing from technical scheme of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of chemical vapor deposition board, which is characterized in that including pedestal and transmission device, the transmission device is for driving
One wafer is moved towards the direction closer or far from the pedestal, so that the wafer is close to the pedestal and enterprising in the pedestal
Row film formation reaction, or make the wafer far from the pedestal.
2. a kind of chemical vapor deposition board according to claim 1, which is characterized in that the transmission device includes holder
And load bearing component, the load bearing component are connect with one end of the holder, the load bearing component is described for carrying the wafer
Holder can extend along direction linear motion to drive the load bearing component to be moved towards the direction closer or far from the pedestal.
3. a kind of chemical vapor deposition board according to claim 1 or 2, which is characterized in that the number of susceptors is more
A, the transmission device is additionally operable to drive the wafer movement, so that the wafer is from one of pedestal upper direction to another
Above one pedestal.
4. a kind of chemical vapor deposition board according to claim 3, which is characterized in that the transmission device includes holder
And load bearing component, the load bearing component are connect with one end of the holder, the load bearing component is described for carrying the wafer
Holder can extend along direction and move along a straight line to drive the load bearing component to be moved towards the direction closer or far from the pedestal,
And the holder can rotation to drive load bearing component described in the load bearing component from one of pedestal upper direction to another
Above one pedestal.
5. a kind of chemical vapor deposition board according to claim 4, which is characterized in that the quantity of the load bearing component is
Multiple, each load bearing component is connect with one end of the holder, and when holder rotation drives the multiple supporting part
Part rotates synchronously.
6. a kind of chemical vapor deposition board according to claim 5, which is characterized in that the quantity of the load bearing component is
4, the quantity of the pedestal is 4, and 4 load bearing components are symmetrical about the holder, and 4 pedestals about
The holder is symmetrical.
7. a kind of chemical vapor deposition board according to claim 2, which is characterized in that the bogey is pallet.
8. a kind of method of processing chemical vapor deposition board alarm, which is characterized in that the chemical vapor deposition board is such as
Claim 1-7 any one of them chemical vapor deposition boards, the treating method comprises following steps：
S1：The chemical vapor deposition board triggering alarm, the chemical vapor deposition board break-off；
S2：The transmission device lifts wafer, and wafer and pedestal is made to keep separation；
S3：Alarm is released, the transmission device passes wafer on pedestal back, and chemical vapor deposition board is resumed work.
9. a kind of method of processing chemical vapor deposition board alarm according to claim 8, which is characterized in that the biography
It includes holder and load bearing component to send device, and the load bearing component is connect with one end of the holder, and the load bearing component is for holding
The wafer is carried, the holder can extend along direction linear motion to drive the load bearing component towards closer or far from described
The direction of pedestal moves；
The S2 is specifically included：The holder extends along direction linear motion to drive the load bearing component towards far from the base
The direction movement of seat, makes the wafer and the pedestal keep separation；
The S3 is specifically included：Alarm is released, the holder extends along direction linear motion to drive the load bearing component court
It is moved close to the direction of the pedestal, the wafer is transmitted back on the pedestal, the chemical vapor deposition board restores work
Make.
10. a kind of method of processing chemical vapor deposition board alarm according to claim 8, which is characterized in that described
The quantity of pedestal is multiple, and the transmission device includes holder and multiple load bearing components, each load bearing component with it is described
One end of holder connects, and multiple load bearing components can be extended along for carrying a wafer, the holder respectively
Direction moves along a straight line to drive multiple load bearing components to be moved synchronously towards the direction closer or far from the pedestal, and described
Holder can rotation to drive multiple load bearing components to rotate synchronously；
The S2 is specifically included：The holder extends along direction linear motion to drive multiple load bearing components towards far from institute
The direction for stating pedestal moves synchronously, and multiple wafers and the corresponding pedestal is made to keep separation；
The S3 is specifically included：Alarm is released, the holder extends along direction linear motion to drive multiple supporting parts
Part is moved synchronously towards the direction close to the pedestal, the wafer is transmitted back on the corresponding pedestal, the chemical gaseous phase
Deposit board is resumed work.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810503740.5A CN108754458B (en) | 2018-05-23 | 2018-05-23 | Chemical vapor deposition machine and alarm method for processing machine |
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| CN201810503740.5A CN108754458B (en) | 2018-05-23 | 2018-05-23 | Chemical vapor deposition machine and alarm method for processing machine |
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| CN108754458A true CN108754458A (en) | 2018-11-06 |
| CN108754458B CN108754458B (en) | 2020-10-16 |
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| CN115305461A (en) * | 2022-09-29 | 2022-11-08 | 江苏邑文微电子科技有限公司 | Automatic control method and device for wafer long film under abnormal working condition |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN108754458B (en) | 2020-10-16 |
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