KR100786399B1 - Sheet type heat treating device and method for processing semiconductors - Google Patents

Abstract

The single wafer heat treatment apparatus 2 is provided with a treatment chamber 5 for containing a substrate W and a showerhead 10 is installed on the ceiling thereof. A support member 28 for supporting the target substrate W is provided so as to face the showerhead 10 when the semiconductor processing is performed on the substrate W to be processed. A heating lamp 30 is provided below the support member 28 to heat the substrate W by irradiating light. The support member 28 and the heating lamp 30 are integrally lifted and lowered with respect to the shower head 10 by the lifting mechanism 20. [ The lifting mechanism 20 sets a different distance between the showerhead 10 and the heating lamp 30 so that the temperature change of the lower surface of the showerhead 10 falls within a predetermined range corresponding to different processing temperatures.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus,             

The present invention relates to a sheet type heat treatment apparatus and method for semiconductor processing for performing processes such as annealing, film formation, etching, oxidation, diffusion and the like. Here, in the semiconductor processing, a semiconductor layer, an insulating layer, a conductive layer, or the like are formed in a predetermined pattern on a substrate to be processed such as a semiconductor wafer or an LCD substrate, Wiring, electrodes, and the like.

In fabricating the semiconductor device, the film formation process and the pattern etching process are repeatedly performed on the semiconductor wafer. The film-forming process is becoming more and more strict every year as semiconductor devices become more dense and highly integrated. For example, a very thin oxide film, such as an insulating film of a capacitor or a gate insulating film, is required to have a thin film and high insulation property.

As an insulating film of these materials, a silicon oxide film, a silicon nitride film, or the like has been conventionally used. However, a metal oxide film such as a tantalum oxide film (Ta ₂ O ₅ ) is used as a material having better insulation characteristics than in recent years. Such a metal oxide film can be deposited by MOCVD (Metal Organic Chemical Vapor Deposition), that is, by using an organometallic compound gasified. When the tantalum oxide film is formed by MOCVD, a tantalum metal alkoxide such as Ta (OC ₂ H ₅ ) ₅ (pentaethoxy tantalum: PET) is used as a raw material liquid.

Even if such a metal oxide film is thin, it can exhibit high reliability with high reliability. Further, after the deposition of the film, a modification treatment can be carried out to further improve the insulation characteristic (Japanese Patent Laid-Open Publication No. 1990-283022). A conventional method of forming a tantalum oxide film as an insulating metal oxide film is as follows.

First, in the CVD apparatus, a tantalum oxide (Ta ₂ O ₅ ) film of a predetermined thickness is deposited on a semiconductor wafer. Here, the raw material liquid is supplied to the processing chamber set in a vacuum atmosphere in a gaseous state by bubbling the raw material liquid with nitrogen gas or the like or by vaporizing it with a vaporizer maintained at a vaporization temperature. Along with this, an oxidizing gas such as oxygen is supplied to the processing chamber. The supplied raw material provides the film forming material by decomposition on the surface of the heated wafer at a treatment temperature of about 400 ° C to 500 ° C. By this film forming material, a tantalum oxide (Ta ₂ O ₅ ) film is deposited on the surface of the wafer.

Next, the wafer is transported to the reformer to carry out the reforming of the tantalum oxide film. Here, in the case of ultraviolet ozone treatment, ozone is irradiated with ultraviolet rays on the wafer surface by an ultraviolet lamp under an atmosphere of ozone (O ₃ ). As a result, CC bonds or hydrocarbons of organic impurities contained in the tantalum oxide film are cut by energy of ultraviolet rays or active oxygen atoms, and the tantalum oxide film is reformed. The process temperature of the reforming treatment is, for example, about 600 ° C.

Next, the wafer is transferred to a heat treatment apparatus to perform crystallization of the tantalum oxide film. Here, in the presence of oxygen gas, the treatment temperature is set to be not lower than the crystallization temperature of the tantalum oxide, for example, 750 캜. By this crystallization annealing, the tantalum oxide film can be densified to a molecular level, the in-plane film thickness can be made uniform, and an insulating film having good insulating characteristics can be obtained.

On the other hand, in the production of semiconductor devices, the improvement of the throughput has been a major goal in order to increase the mass productivity. In addition, since the maintenance cost of the heat treatment apparatus is very large, it is required to reduce the number of installed apparatuses as much as possible. Under such circumstances, a technique has been proposed in which the above-described deposition processing and reforming processing are executed in the same processing room (JP-A-1997-153491 and JP-A-1998-182300). However, in this case, since the process temperature is very different in the deposition process and the reforming process, the by-product film adhered to the inner surface side of the treatment chamber during the deposition process peels off due to the process temperature difference and tends to scatter as particles. Particularly, in the apparatus of the type in which the processing gas is supplied from the showerhead, the by-product film adhered to the surface of the showerhead is more likely to be peeled off due to the difference in processing temperature.

Further, from the viewpoint of the treatment efficiency and the cost, it is required to perform the crystallization treatment in the same treatment room in addition to the sedimentation treatment and the modification treatment. However, since the treatment temperature of the crystallization treatment is higher than the treatment temperature of the sedimentation treatment and the reforming treatment, the above problem is more remarkable and has not been realized.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a single wafer type heat treatment apparatus and method which prevent peeling of a by-product film on a showerhead due to a difference in treatment temperature.

A first embodiment of the present invention is a single wafer annealing apparatus for performing a plurality of semiconductor treatments having different processing temperatures on a substrate to be processed,

A processing chamber for accommodating a substrate to be processed,

A gas supply system including a shower head provided on a ceiling of the treatment chamber and having a plurality of spray holes for spraying a treatment gas onto a lower surface thereof;

An evacuation system for vacuum evacuating the processing chamber,

A supporting member for supporting the substrate to be processed so as to face the showerhead in the processing chamber when the semiconductor processing is performed on the substrate to be processed;

A heating lamp provided below the support member for heating the substrate to be processed by irradiating light,

The shower head and the heating lamp are integrally lifted and lowered with respect to the showerhead so that the temperature change of the lower surface of the showerhead falls within a predetermined range corresponding to the different treatment temperature, And the elevating mechanism for setting the distance between the heating lamps at different distances.

A second embodiment of the present invention is a single wafer annealing method in the apparatus of the first embodiment,

Setting a first distance between the showerhead and the heating lamp and executing a first process at a first process temperature,

Setting the distance between the showerhead and the heating lamp at a second distance and performing a second process at a second process temperature, wherein the second distance is greater than the first distance, Is higher than the first treatment temperature.

A third embodiment of the present invention is a single wafer annealing apparatus for performing a plurality of semiconductor processes with different processing temperatures on a substrate to be processed,

A processing chamber for accommodating a substrate to be processed,

A gas supply system including a shower head provided on a ceiling of the treatment chamber and having a plurality of spray holes for spraying a treatment gas onto a lower surface thereof;

An evacuation system for vacuum evacuating the processing chamber,

A supporting member for supporting the substrate to be processed so as to face the showerhead in the processing chamber when the semiconductor processing is performed on the substrate to be processed;                 

A heating lamp provided below the supporting member for heating the substrate to be processed by irradiating light,

A lifting mechanism for elevating and lowering the supporting member so as to adjust the temperature of the lower surface of the showerhead to a predetermined range in response to the different treatment temperature, Respectively.

A fourth embodiment of the present invention is a single wafer annealing method in the apparatus of the third embodiment,

Setting a first distance between the target substrate and the heating lamp and executing a first process at a first process temperature,

And setting a second distance between the target substrate and the heating lamp and performing a second process at a second process temperature, wherein the second distance is smaller than the first distance, and the second process temperature is Wherein the first processing temperature is higher than the first processing temperature, and the distance between the shower head and the heating lamp is constant in the first and second processes.

1 is a schematic view showing a single wafer annealing apparatus for semiconductor processing according to an embodiment of the present invention;

Figs. 2A to 2C are schematic views showing the relationship between the heat treatment at different processing temperatures (wafer temperature) in the apparatus shown in Fig. 1 and the positions of the mounting table and the heating lamp relative to the showerhead,

3 is a graph showing the relationship between the heat treatment at different processing temperatures (wafer temperature) and the input power to the heating lamp in the apparatus shown in Fig. 1,

4 is a view showing a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention.

5 is a view showing a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention.

6 is a graph showing the relationship between the heat treatment for different processing temperatures (wafer temperature) and the input power to the heating lamp in the apparatus shown in Fig. 5,

7 is a schematic view showing a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention.

Embodiments of the present invention will be described below with reference to the drawings. In the following description, constituent elements having substantially the same functions and configurations are denoted by the same reference numerals and redundant explanations are executed only when necessary.

1 is a configuration diagram showing a single wafer annealing apparatus for semiconductor processing according to an embodiment of the present invention. This apparatus is configured to deposit a tantalum oxide film as a metal oxide film by CVD, and to modify and crystallize the tantalum oxide film. In the following description, "low temperature heat treatment", "medium temperature heat treatment" and "high temperature heat treatment" show the temperature relationship between each treatment and do not mean absolute temperature.

As shown in Fig. 1, the heat treatment apparatus 2 has a treatment vessel 4 made of, for example, an aluminum cylinder, and a treatment chamber 5 is formed in the treatment vessel 4. [ A bottom portion 6 of the processing container 4 is connected to an exhaust portion 7 for sucking the inside of the processing chamber 5 through an exhaust port (not shown). The showerhead 10 is installed on the ceiling of the processing vessel 4 via a sealing member 8 such as an O-ring. The showerhead 10 is connected to a gas supply unit 9 for supplying various kinds of process gases into the process chamber 5. [ A port 11 is formed on a side wall of the processing vessel 4 and can be opened and closed by a gate valve 12. [ The semiconductor wafer W as a substrate to be processed is carried in and out of the processing chamber 5 through the port 11.

In the center of the bottom portion 6 of the processing container 4, a large-diameter opening 14 is formed in a circular shape. A bottom plate 16 is provided below the opening 14 so as to cover the opening 14 and capable of ascending and descending with respect to the processing vessel 4. A bellows 18 of a large diameter that is expandable and contractible is hermetically connected between the rear surface of the container bottom 6 and the top surface of the bottom plate 16 so as to surround the opening 14. [ The bellows 18 allows the bottom plate 16 to be raised and lowered while maintaining the airtightness in the treatment chamber 5.

A lifting mechanism (20) constituted by a ball screw mechanism is provided at the bottom of the processing container (4) for lifting and lowering the bottom plate (16). The lifting mechanism 20 has a plurality of vertical screw shafts 24 whose upper ends are rotatably supported by the bearings 22 on the container bottom 6. Although only two screw shafts 24 are shown in Fig. 1, in practice, three or more, for example three, are provided at substantially equal intervals in the circumferential direction. A ball screw nut (25) is fixed to the bottom plate (16) at a portion where the screw shaft (24) passes through the bottom plate (16). Therefore, by rotating the screw shaft 24 in the opposite direction synchronously, the bottom plate 16 can be moved up and down (raised and lowered).

In order to rotate the screw shaft 24 in the opposite direction, the lower end of each screw shaft 24 is connected to the motor 26. Each motor 26 is fixed to a fixed bellows (not shown). The motor 26 is driven under the control of the controller 27. It is also possible to provide only one motor 26 common to all the screw shafts 24 and to rotate the motors 26 in a synchronized manner by putting a belt or the like between the motor 26 and the screw shaft 24 in synchronism with each other.

The bottom plate 16 is provided with a mounting table 28 as a support member for supporting the wafer W and a heating lamp 30 for heating the wafer W. [ On the upper surface of the bottom plate 16, for example, a plurality of pillars 32 are erected, and a thin plate-like mounting table 28 made of, for example, a carbon material or ceramic such as AlN is provided. The mount table 28 has a diameter larger than that of the wafer W such that the mount table 28 substantially contacts the entire bottom surface of the wafer W. [ However, the diameter of the mount table 28 is set to be slightly smaller than the diameter of the opening 14, and the mount table 28 can be raised and lowered through the opening 14. [ It is also possible to provide a cylindrical reflector whose inner surface is a reflection surface instead of the column 32 and to support the table 28 on the upper surface.

An opening 34 is formed in the bottom plate 16 in correspondence with just under the mount table 28. The opening 34 is hermetically closed by a transparent window 38 having a thickness of, for example, quartz glass or the like via a sealing member 36 such as an O-ring. A partition wall 42 is connected to the lower surface of the bottom plate 16 and a box-shaped heating chamber 40 surrounding the transmission window 38 is formed below the transmission window 38. In the heating chamber 40, a plurality of heating lamps 30 as heating means are attached to a rotating table 44 which also serves as a reflecting mirror. The rotating shaft 46 of the rotating table 44 passes through the bottom of the heating chamber 40 via the bearing 48 and is connected to the rotating motor 50 provided at the lower portion of the heating chamber 40. The heat ray emitted by the heating lamp 30 passes through the transmission window 38 and irradiates the lower surface of the mount table 28 to heat the wafer W. The power supply 31 of the heating lamp 30 is driven under the control of the controller 27. [

On the lower side of the mount table 28, a plurality of three vertical lifter pins 52 (only two are shown in Fig. 1) made of quartz, for example, are provided. The lifter pin 52 can extend upward from the lifter hole 58 formed in the mount table 28 to support the wafer W. [ The lifter pins 52 are coupled to each other at the base by a coupling member 54, which is ring-shaped, for example, made of quartz so as to be vertically movable. The engaging member 54 is fixed to the upper end of a vertically extending lifting bar 56 passing through the bottom plate 16. By lifting the lifting bar 56, the lifter pin 52 ascends and descends with respect to the mount table 28 and assists in loading and unloading the wafer W with respect to the mount table 26.

At the portion of the lifting bar 56 passing through the bottom plate 6, a bellows 60 is provided which can be stretched or shrunk in order to maintain the airtightness in the treatment chamber 5. The lower end of the lifting bar 56 is connected to an actuator 62 that moves up and down. The actuator (62) is fixed to the bottom plate (16) by an attaching portion (64). Therefore, the mount table 28, the heating lamp 30, the transmission window 38, the lifter pin 52 and the like supported on the bottom plate 16 integrally move up and down according to the lifting and lowering of the bottom plate 16 .

The showerhead 10 is opposed so as to cover substantially the entire upper surface of the table 28 so that the processing space S is formed between the showerhead 10 and the table 28. A plurality of spray holes 68A and 68B for spraying gas are formed on the lower surface 66 of the shower head 10. [ Process gas from the gas supply unit 9, for example, the recovered organic metal gas and oxygen, reforming ozone, and crystallization oxygen are supplied into the process chamber 5 from the spray holes 68A and 68B.

The inside of the showerhead 10 is divided into two by a head space 70A for a raw gas and a head space 70B for a gas other than the head space 70A. Head space (70A) has, for example, the vaporized organic metal state vaporized by carrier gas consisting of inert gas such as helium material, such as metal alkoxide [e.g. PET: Penta ethoxy _{tantalum: Ta (OC 2 H 5)} 5] Is introduced in a flow-controlled state. In addition, oxygen or ozone (O ₃ ) is introduced into the head space 70B in a state in which the flow rate is selectively or simultaneously controlled.

The spray hole 68A communicates with the head space 70A for the raw material gas. The spray hole 68B communicates with the head space 70B for the different gas. The gases different from the raw material gas ejected from both the ejection holes 68A, 68B are mixed in the processing space S and supplied in a so-called premixed state. The gas supply system is not limited to this premixing, and both gases may be mixed in advance in the showerhead. During the reforming treatment or crystallization treatment, ozone or oxygen is supplied from the spray holes 68B, but the raw material gas is not supplied from the spray holes 68A.

A cooling jacket 72 is provided in the side wall of the showerhead 10. To the cooling jacket 72, a coolant of about 60 DEG C, for example, hot water flows. Thereby, the side wall of the showerhead 10 is maintained at, for example, about 140 캜 to 175 캜, whereby the raw material gas is prevented from being decomposed by heating. A cooling jacket 74 is also provided on the side wall of the processing vessel 4. Hot water of about 60 占 폚, for example, also flows as a coolant to the cooling jacket 74. [ Thereby, the side wall of the processing vessel 4 is maintained at, for example, about 140 캜 to 175 캜, wherein the raw material gas is prevented from being decomposed by heating or liquefied by cooling.

Next, a single-wafer heat treatment method according to an embodiment of the present invention, which is performed using the heat treatment apparatus shown in Fig. 1, will be described with reference to Figs. 2A to 2C and Fig. 2A to 2C are schematic diagrams showing the relationship between the heat treatment of different processing temperatures (wafer temperature) in the apparatus shown in Fig. 1 and the position of the mounting table and the heating lamp relative to the showerhead. 3 is a graph showing the relationship between the heat treatment for different treatment temperatures (wafer temperature) and the input power to the heating lamp in the apparatus shown in Fig.

In the single-wafer heat treatment method, the mounting table 28 and the heating lamp 30 are integrally raised and lowered with respect to the showerhead 10, and heat treatment at different processing temperatures is performed at different height positions. That is, different distances between the showerhead 10 and the heating lamp 30 are set for different process temperatures. Thereby, it is preferable that the temperature change in the surface (bottom surface and side surface) of the showerhead 10 to different treatment temperatures is within a predetermined range.

Specifically, as shown in FIG. 2A, a deposition process (low temperature heat treatment) for depositing a tantalum oxide film on the wafer W is performed at the elevation position of the table 28. Further, as shown in Fig. 2B, a modifying treatment (middle temperature heat treatment) for modifying the tantalum oxide film at the intermediate position of the mounting table 28 is carried out. Further, as shown in Fig. 2C, a crystallization process (high-temperature heat treatment) for crystallizing the tantalum oxide film at the drop position of the loading table 28 is executed.

≪ Low temperature heat treatment (deposition processing) >

First, untreated semiconductor wafers W are transferred from the transfer chamber or the load lock chamber (not shown) into the process chamber 5 through the port 11 by a transfer arm (not shown). The wafer W is loaded on the mount table 28 in response to an assist force generated by the lifting operation of the lifter pin 52.

Next, under the control of the controller 27, the bottom plate 16 is elevated by the lifting mechanism 20 so that the mount table 28, the transmission window 38, the heating lamp 30, It moves. Then, as shown in Fig. 2A, the distance between the showerhead 10 and the mount table 28 is set to a predetermined distance H1. The position of the mounting table 28 at this time is set as the rising position.

Next, the heating lamp 30 is driven under the control of the controller 27 to raise the temperature of the semiconductor wafer W to a predetermined temperature and hold it. Further, the raw material gas and oxygen (O ₂ ) are supplied from the showerhead 10, Gas is supplied to the processing space S, and the inside of the processing chamber 5 is sucked and maintained at a predetermined processing pressure. Thereby, the deposition process of the tantalum oxide film is carried out.

PET (pentaethoxy tantalum: Ta (OC ₂ H ₅ ) ₅ ) which is a liquid raw material is vaporized and supplied by a vaporizer. This feed system is heated to a predetermined temperature, for example, about 160 DEG C to prevent re-liquefaction of the feed gas. The raw material gas is supplied from the head space 70A of the showerhead 10 to the processing space S through the spray hole 68A. On the other hand, oxygen (O ₂ ) The gas is supplied from the head space 70B of the showerhead 10 to the processing space S through the spray hole 68B. The raw material gas and oxygen (O ₂ ) The gases are mixed and reacted in the processing space S, and a tantalum oxide film (Ta ₂ O ₅ ) is deposited on the wafer surface.

The processing temperature of the deposition process, that is, the wafer temperature is set within the range of 400 ° C to 500 ° C, for example, about 480 ° C. The distance H1 between the showerhead 10 and the mount table 28 is set to, for example, about 1.5 cm to 2.5 cm. At this time, the surface temperature of the showerhead 10 is, for example, about 150 占 폚.

The distance H1 between the showerhead 10 and the mount table 28 is very small and both are close to each other. Therefore, the raw material gas effectively contributes to the deposition reaction, and the deposition can be performed efficiently. The distance H1 is set such that the surface of the showerhead 10 has a temperature at which the by-product film is not adhered thereto, for example, 150 deg. The distance H1 is set in consideration of the cooling ability of the cooling jacket 72 of the showerhead 10 and the temperature of the wafer W which is the processing temperature at the time of deposition. However, even if the showerhead 10 is cooled, it is inevitable that some byproduct film is deposited on the surface of the showerhead 10 during this deposition process.

If the tantalum oxide film having a predetermined film thickness is deposited by performing the deposition process for the predetermined time in the manner described above, the supply of the source gas and the oxygen (O ₂ ) is stopped, and then the process proceeds to the modifying process of the intermediate temperature heat treatment .

<Heat treatment at medium temperature (reforming treatment)>

3, under the control of the controller 27, the supplied power to the heating lamp 30 is increased, and the wafer W is heated to a temperature within the range of 600 ° C. to 700 ° C. The temperature is raised to a predetermined temperature, for example, 650 占 폚 in a short time. At this time, if the position of the mounting table 28 is kept fixed, the surface temperature of the shower head 10 rises even if the shower head 10 is cooled by the cooling jacket 72. The elevating mechanism 20 is driven to lower the bottom plate 16 under the control of the controller 27 because the surface temperature of the showerhead 10 is suppressed from rising and maintained at about 150 占 폚. Thus, as shown in Fig. 2B, the distance between the showerhead 10 and the mount table 28 is increased up to the distance H2. The distance H2 is required in advance in accordance with the treatment conditions in the modification treatment, and is preferably about 7 cm to 10 cm, for example. The position of the mounting table 28 at this time is set as an intermediate position.

Next, with holding the wafer (W) by the reforming treatment temperature, at the same time for supplying the ozone (O ₃₎ from the shower head 10, to draw the treatment chamber (5) maintained at a predetermined process pressure. Thus, the tantalum oxide film reforming process is performed. The ozone can be generated, for example, by an ozone generator (not shown). The ozone may be supplied not only from the shower head 10 but also from a nozzle provided on the side wall of the processing vessel 4 or the like. A large amount of active oxygen atoms is generated by the action of the supplied ozone. As a result, oxygen is sufficiently supplied into the tantalum oxide film on the wafer surface to modify the tantalum oxide film.

The processing pressure in the treatment chamber 5 of the reforming treatment is set within the range of 133 to 79800 Pa (1 Torr to 600 Torr). At a pressure outside this range, the progress of the reforming is slow or insufficient, and the withstand voltage of the tantalum oxide film lowers. The processing temperature of the reforming treatment, that is, the temperature of the wafer W is set to a temperature lower than the crystallization temperature of the tantalum oxide film, for example, within the range of 600 to 700 占 폚. When the wafer temperature is lower than 600 占 폚, the withstand voltage is insufficient. On the other hand, when the temperature exceeds 700 ° C, since the crystallization temperature of the metal is about 720 ° C to 800 ° C, crystallization occurs and sufficient modification can not be performed.

In addition, ultraviolet rays may be irradiated at the time of the reforming treatment, whereby the modification effect can be improved.

By performing the reforming treatment in this way, the temperature of the showerhead 10 hardly changes between the deposition processing and the reforming processing. Therefore, the by-product film on the surface of the shower head does not peel off due to heat expansion and contraction, and therefore, there is little possibility of occurrence of particles. In this regard, in the conventional apparatus, the by-product film on the surface of the showerhead is peeled off due to heat expansion and contraction, which causes particle contamination.

As described above, if the reforming process is performed only for a predetermined time, the supply of ozone is stopped, and then the process proceeds to the crystallization process, which is the high temperature heat treatment.

&Lt; High temperature heat treatment (crystallization treatment) >

3, the input power to the heating lamp 30 is further increased under the control of the controller 27, and a predetermined temperature within the range of 720 to 800 DEG C, which is the processing temperature of the crystallization treatment, For example, up to 750 ° C in a short time. At this time, if the position of the mount table 28 is fixed, even if the showerhead 10 is cooled by the cooling jacket 72, the temperature of the surface of the showerhead 10 rises. The elevating mechanism 20 is driven under the control of the controller 27 to further lower the bottom plate 16 because the temperature of the surface of the showerhead 10 is prevented from rising and maintained at about 150 캜 . Thus, as shown in Fig. 2C, the distance between the showerhead 10 and the mount table 28 is increased to H3. The distance 32 is determined in advance according to the processing conditions at the time of the crystallization treatment, and is preferably about 10 cm to 15 cm, for example. At this time, the position of the mounting table 28 is set as the descent position.

Next, oxygen (O ₂ ) is supplied from the showerhead 10 while the wafer W is maintained at the crystallization treatment temperature, and the inside of the treatment chamber 5 is sucked and maintained at a predetermined treatment pressure. Thereby, the crystallization treatment of the tantalum oxide film is carried out. As described above, by crystallizing the tantalum oxide film after the modification, it becomes possible to obtain an insulating film having better electrical characteristics.

By performing the crystallization treatment in this way, the temperature of the shower head hardly changes between the deposition processing, the reforming treatment and the crystallization treatment. For this reason, the by-product film on the surface of the shower head does not peel off due to heat expansion or contraction, and therefore, there is almost no possibility of occurrence of particles.

When a series of processing of the deposition processing, the reforming processing, and the crystallization processing is completed for the semiconductor wafer W, the same processing as described above is repeated for the new untreated wafer. That is, the tantalum oxide film is continuously formed on a plurality of wafers.

Thus, in the apparatus shown in Fig. 1, the deposition processing, the reforming processing, and the crystallization processing in which the processing temperatures are different are successively executed in one processing chamber 5. At this time, under the control of the controller 27, the supplied electric power to the heating lamp 30 is changed, and correspondingly, between the showerhead 10 and the mount table 28 (wafer W) The distance between the showerhead 10 and the heating lamp 30 is set to be a different distance. Thereby, the surface temperature of the showerhead 10 is maintained at a substantially constant temperature, for example, 150 占 폚.

Therefore, according to the apparatus shown in Fig. 1, the by-product film adhering to the surface of the showerhead 10 can be greatly peeled off and the particles can be greatly suppressed. In addition, since a plurality of processes are continuously executed in one processing chamber 5, time for exchanging wafers is not required, and the processing efficiency can be improved. In addition, since the number of processing mistakes can be reduced, the facility cost can be reduced accordingly.

Further, in the above embodiment, as a typical example, the surface temperature of the showerhead 10 is controlled to be constant at about 150 DEG C in order to facilitate understanding of the present invention. However, in reality, even if the temperature changes within a certain temperature range, for example, within a range of 占 0 占 폚, the occurrence of peeling of the by-product film due to this temperature change can be sufficiently suppressed. Therefore, for example, when the process temperature difference between the reforming process and the crystallization process is very small, this process can be performed at the same wafer position (mount position), for example, at an intermediate position or a drop position in FIG. 3, . In other words, when the temperature change of the shower head 10 at the time of the deposition processing is about 占 0 占 폚, the height position of the loading table and the heating lamp in the reforming process and the crystallization process can be arbitrarily changed.

4 is a view illustrating a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention. The apparatus 2 'according to this embodiment is similar to the apparatus 2 shown in Fig. 1, but does not have a mount table 28. Fig. In place of the mount table 28, a lifter pin 52 that assists in loading and unloading is used as a processing support member. That is, when the deposition processing, the reforming processing, and the crystallization processing are performed on the wafer W, the wafer W is supported by three lifter pins 52 that make point contact with the bottom surface thereof. Therefore, the light from the heating lamp 30 is directly irradiated onto the back surface of the wafer W.

Also in the apparatus 2 'shown in Fig. 4, the distance between the showerhead 10 and the heating lamp 30 is changed in three steps in the deposition process, the reforming process, and the crystallization process. Thus, the temperature change in the surface (lower surface and side surface) of the showerhead 10 is preferably controlled so as to be within a predetermined range. At this time, the bottom plate 16 is lifted and lowered by the lifting mechanism 20 in the same manner as the device 2 shown in Fig. 1, whereby the lifter pin 52 and the heating lamp 30 are integrally lifted do. Therefore, the same effect as that of the apparatus shown in Fig. 1 can be obtained in the apparatus shown in Fig.

5 is a view illustrating a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention. In the apparatus 80 according to this embodiment, the bottom of the process chamber 5 is composed of the fixed container bottom 6 itself. The transmission window 36 and the heating lamp 30 are fixed to the container bottom 6. On the other hand, the mounting table 28 for mounting the wafer W is not fixed to the container bottom part 6 but is installed so as to be able to move up and down.

Concretely, the plurality of pillars 32 of the mounting table 28 are coupled to each other by a coupling member 84, for example, made of quartz, which is annular in the base portion so as to move up and down together. The engaging member 84 is fixed to the upper end of the lifting bar 86 extending vertically through the container bottom 6. By lifting the lifting bar 86, the table 28 is raised and lowered with respect to the container bottom 6. Further, in order to obtain a long stroke in the vertical direction, the lifter pin 52 is set longer than that shown in Fig.

At the portion of the lifting bar 86 passing through the container bottom portion 6, a bellows 90 which can be stretched or shrunk is provided in order to maintain the airtightness in the treatment chamber 5. The lower end of the lifting bar 86 is connected to an actuator 92 that moves up and down. The actuator 92 is fixed to a fixed bellows (not shown). The actuator 92 is driven under the control of the controller 27 together with the power source 31 of the heating lamp 30. [

In the apparatus shown in Fig. 5, the mounting table 28 is moved up and down in accordance with different processing temperatures, and the distance between the heating lamp 30 and the wafer W is changed. Specifically, in the deposition processing, the reforming processing, and the crystallization processing, the wafers W are disposed at the positions P1, P2, and P3 in Fig. 5, respectively. That is, the positions P1, P2, and P3 correspond to the ascending position of FIG. 2A, the intermediate position of FIG. 2B, and the descending position of FIG.

Fig. 6 is a graph showing the relationship between the heat treatment for different processing temperatures (wafer temperature) and the input power to the heating lamp in the apparatus shown in Fig.

6, in the depositing process, the reforming process, and the crystallization process, the supplied power to the heating lamp 30 is kept substantially constant, while the distance between the heating lamp 30 and the wafer W is changed The processing temperature is set. Here, the partition wall 42 of the heating chamber is fixed to the container bottom portion 6, and the distance between the heating lamp 30 and the showerhead 10 is kept constant. Thereby, the surface temperature of the showerhead 10 is maintained at a substantially constant temperature, for example, 150 占 폚.

Therefore, according to the apparatus shown in Fig. 1, the by-product film adhering to the surface of the showerhead 10 can be greatly peeled off to form particles. In addition, since a plurality of processes are continuously executed in one processing chamber 5, a time for replacing the wafer is unnecessary, and the processing efficiency can be improved. In addition, since the number of processing mistakes can be reduced, the facility cost can be suppressed as much.                 

Also in this case, the temperature change of the showerhead 10 can be allowed to be within 占 5 占 폚. It is also possible to change the input power to the heating lamp 30 within the range of the allowable temperature change of the showerhead 10. [

7 is a configuration diagram showing a single wafer annealing apparatus for semiconductor processing according to another embodiment of the present invention. The apparatus 80 'according to this embodiment is similar to the apparatus 80 shown in Fig. 5, but does not have a mount table 28. Fig. In place of the mounting table 28, a lifter pin 52 for assisting in loading and unloading is also used as a processing supporting member. That is, when the deposition processing, the reforming processing and the crystallization processing are performed on the wafer W, the wafer W is supported by three lifter pins 52 that make point contact with the bottom surface thereof. Therefore, the light from the heating lamp 30 is directly irradiated onto the back surface of the wafer W.

7, the power supplied to the heating lamp 30 is kept substantially constant in the deposition process, the reforming process, and the crystallization process, while the wafer W and the heating lamp 30 are kept at a constant temperature, Is changed to three levels. Thus, the temperature change in the surface (lower surface and side surface) of the showerhead 10 is preferably controlled so as to be within a predetermined range. At this time, the actuator 62 of the lifter pin 52 is driven under the control of the controller 27 together with the power source 31 of the heating lamp 30, and the lifter pin 52 The wafer W is lifted and lowered. Therefore, the same effect as that of the apparatus shown in Fig. 5 can be obtained also in the apparatus shown in Fig.

In the above-described embodiment, the case where the tantalum oxide film is formed as the metal oxide film is described as an example. However, the present invention can also be applied to the case of forming different metal oxide films such as a titanium oxide film, a zirconium oxide film, a barium oxide film, and a strontium oxide film. In this case, the raw material uses a metal alkoxide of such material. The present invention can also be applied to the case of forming a niobium oxide film, a hafnium oxide film, a yttrium oxide film, a lead oxide film, and the like in addition to the above metal oxide film.

The present invention is not limited to the above-described embodiments, and various changes can be made within the scope of the present invention without departing from the gist of the present invention. In addition, each of the embodiments may be combined as appropriate as possible, and in such a case, a combined effect can be obtained.

Claims (20)

A single wafer type heat treatment apparatus for performing a plurality of semiconductor treatments having different processing temperatures on a substrate to be processed, A processing chamber for accommodating a substrate to be processed, Wherein the gas supply system includes a showerhead which is provided on a ceiling of the treatment chamber and has a plurality of spray holes for spraying a treatment gas onto a lower surface of the treatment chamber, Wow, An evacuation system for vacuum evacuating the processing chamber, A supporting member for supporting the substrate to be processed so as to face the showerhead in the processing chamber when the semiconductor processing is performed on the substrate to be processed; A heating lamp provided below the supporting member for heating the substrate to be processed by irradiating light, The elevating mechanism is configured to elevate and lower the support member and the heating lamp with respect to the showerhead such that the temperature change of the lower surface of the showerhead falls within a predetermined range, And the elevating mechanism is set to a different distance between the shower head and the heating lamp Single wafer heat treatment system for semiconductor processing. The method according to claim 1, Wherein the treatment chamber comprises a container having a first opening formed in a bottom portion thereof, a bottom plate disposed to cover the first opening and capable of moving up and down with respect to the container, and an expandable and contractible connecting member for airtightly connecting the container and the bottom plate Wherein the support member and the heating lamp are supported by the bottom plate, and the lifting mechanism lifts the bottom plate Single wafer heat treatment system for semiconductor processing. 3. The method of claim 2, A second opening is formed in the bottom plate and the second opening is hermetically closed by a transmission window that transmits light irradiated from the heating lamp, and the supporting member and the heating lamp are respectively disposed inside and outside the processing chamber And is also arranged to be opposed to each other with the transmission window therebetween Single wafer heat treatment system for semiconductor processing. 3. The method of claim 2, Wherein the connecting member comprises a bellows Single wafer heat treatment system for semiconductor processing. The method according to claim 1, Wherein the support member has a mounting table that substantially contacts the entire bottom surface of the substrate to be processed Single wafer heat treatment system for semiconductor processing. 6. The method of claim 5, A plurality of lifter pins extending upward from a lifter hole formed in the mount table and supporting loading and unloading of the substrate to be mounted on the mount table and a drive mechanism for driving the lifter pins, The mechanism is configured to raise and lower the supporting member, the heating lamp, and the driving mechanism integrally Single wafer heat treatment system for semiconductor processing. The method according to claim 1, Wherein the support member includes a plurality of lifter pins that are in point contact with the bottom surface of the substrate to be processed Single wafer heat treatment system for semiconductor processing. The method according to claim 1, Wherein the controller is further configured to control the temperature of the showerhead and the temperature of the showerhead in accordance with a signal representative of the energy of light emitted from the heating lamp so that the temperature change of the lower surface of the showerhead falls within a predetermined range, Setting the distance between the heating lamps at different distances Single wafer heat treatment system for semiconductor processing. 9. The method of claim 8, The signal representative of the energy of the light is the input power to the heating lamp Single wafer heat treatment system for semiconductor processing. 9. The method of claim 8, Wherein the controller includes a first processing temperature for depositing a metal oxide film on the substrate to be processed, a second processing temperature higher than the first processing temperature for modifying the metal oxide film, and a second processing temperature for crystallizing the metal oxide film Second and third distances between the showerhead and the heating lamp via the lifting mechanism in accordance with a third treatment temperature higher than the second treatment temperature, wherein the second distance is larger than the first distance Less than the third distance Single wafer heat treatment system for semiconductor processing. A single-wafer heat treatment method in the apparatus according to claim 1, A step of setting a first distance between the showerhead and the heating lamp and executing a first process at a first process temperature, And a step of setting a second distance between the showerhead and the heating lamp and executing a second process at a second process temperature, Wherein the second distance is greater than the first distance and the second processing temperature is higher than the first processing temperature Single wafer heat treatment method for semiconductor processing. 12. The method of claim 11, Further comprising the step of setting a third distance between the showerhead and the heating lamp and executing a third process at a third process temperature, The third distance is greater than the second distance, the third process temperature is higher than the second process temperature, The first, second, and third processes are each a deposition process for depositing a metal oxide film on the substrate to be processed, a reforming process for modifying the metal oxide film, and a crystallization process for crystallizing the metal oxide film Single wafer heat treatment method for semiconductor processing. 12. The method of claim 11, The shower head and the heating lamp are set at different distances from each other through the lifting mechanism corresponding to a signal representative of the energy of light emitted from the heating lamp so that the temperature change of the lower surface of the showerhead is within a predetermined range Single wafer heat treatment method for semiconductor processing. 14. The method of claim 13, The signal representative of the energy of the light is the input power to the heating lamp Single wafer heat treatment method for semiconductor processing. A single wafer type heat treatment apparatus for performing a plurality of semiconductor treatments having different processing temperatures on a substrate to be processed, A processing chamber for accommodating a substrate to be processed, Wherein the gas supply system includes a showerhead which is provided on a ceiling of the treatment chamber and has a plurality of spray holes for spraying a treatment gas onto a lower surface of the treatment chamber, Wow, An evacuation system for vacuum evacuating the processing chamber, A supporting member for supporting the substrate to be processed so as to face the showerhead in the processing chamber when the semiconductor processing is performed on the substrate to be processed; A heating lamp provided below the supporting member for heating the substrate to be processed by irradiating light, Wherein the lifting mechanism lifts the support member at a different distance between the substrate to be processed and the heating lamp so that the temperature change of the lower surface of the shower head falls within a predetermined range corresponding to the different treatment temperature And a lifting mechanism Single wafer heat treatment system for semiconductor processing. 16. The method of claim 15, Wherein the support member has a mounting table that substantially contacts the entire bottom surface of the substrate to be processed Single wafer heat treatment system for semiconductor processing. 16. The method of claim 15, Wherein the support member includes a plurality of lifter pins that are in point contact with the bottom surface of the substrate to be processed Single wafer heat treatment system for semiconductor processing. 16. The method of claim 15, Wherein the controller is further provided with a first processing temperature for depositing a metal oxide film on the substrate to be processed, a second processing temperature for modifying the metal oxide film, the second processing temperature being higher than the first processing temperature, Second and third distances between the substrate to be processed and the heating lamp via the lifting mechanism in accordance with a third processing temperature higher than the second processing temperature for crystallizing the oxide film, 2 distance is less than the first distance and greater than the third distance Single wafer heat treatment system for semiconductor processing. A single-wafer heat treatment method in the apparatus according to claim 15, A step of setting a first distance between the target substrate and the heating lamp and performing a first process at a first process temperature, And setting the distance between the target substrate and the heating lamp at a second distance and performing a second process at a second process temperature, Wherein the second distance is smaller than the first distance and the second processing temperature is higher than the first processing temperature, and in the first and second processing, the distance between the showerhead and the heating lamp is constant Single wafer heat treatment method for semiconductor processing. 20. The method of claim 19, Further comprising the step of setting a third distance between the substrate to be processed and the heating lamp and performing a third process at a third process temperature, The third distance is smaller than the second distance and the third processing temperature is higher than the second processing temperature. In the first, second, and third processes, the distance between the showerhead and the heating lamp is constant , The first, second, and third processes are each a deposition process for depositing a metal oxide film on the substrate to be processed, a reforming process for modifying the metal oxide film, and a crystallization process for crystallizing the metal oxide film Single wafer heat treatment method for semiconductor processing.

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