WO2012015140A1 - 기판 서셉터 및 그것을 갖는 증착 장치 - Google Patents
기판 서셉터 및 그것을 갖는 증착 장치 Download PDFInfo
- Publication number
- WO2012015140A1 WO2012015140A1 PCT/KR2011/001819 KR2011001819W WO2012015140A1 WO 2012015140 A1 WO2012015140 A1 WO 2012015140A1 KR 2011001819 W KR2011001819 W KR 2011001819W WO 2012015140 A1 WO2012015140 A1 WO 2012015140A1
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- Prior art keywords
- susceptor
- substrate
- stages
- shielding
- heating element
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 230000008021 deposition Effects 0.000 title claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000010926 purge Methods 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 14
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 239000007921 spray Substances 0.000 claims abstract 4
- 230000005855 radiation Effects 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 239000012141 concentrate Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- the present invention relates to an apparatus used for manufacturing a semiconductor device, and more particularly, to a susceptor for supporting a substrate and an apparatus for performing a deposition process with the same.
- an atomic layer deposition method is introduced in the deposition process for manufacturing a semiconductor device.
- the atomic layer deposition method is a method of forming a deposition layer with a desired thickness by repeating a unit reaction cycle for depositing at an atomic layer thickness.
- the atomic layer deposition method has a very slow deposition rate compared with chemical vapor deposition (CVD) or sputter method, and therefore, it takes a lot of time to grow a film to a desired thickness, thereby reducing productivity.
- the temperature uniformity of the susceptor on which the substrate is placed is one of the important factors that determine the uniformity of the thickness of the thin film deposited on the substrate.
- the susceptor thermally affects the substrate depending on the arrangement of the heating elements, resulting in an unbalanced film quality. Therefore, the thickness of the plate provided with the heating element in the susceptor in order to reduce the effect due to the arrangement of the heating element to ensure temperature uniformity.
- An object of the present invention is to provide a substrate susceptor and a deposition apparatus having the same that can improve thermal efficiency.
- an object of the present invention is to provide a substrate susceptor and a deposition apparatus having the same that can increase the temperature uniformity.
- the deposition apparatus comprises a process chamber; A substrate susceptor installed in the process chamber and having a plurality of substrates disposed on the same plane; A spraying member for injecting gas to the entire processing surface of the substrate at a position corresponding to each of the plurality of substrates placed on the substrate susceptor;
- the substrate susceptor includes an upper susceptor having stages on which upper substrates are placed;
- a lower susceptor coupled to a lower surface of the upper susceptor and provided with a heating element configured to provide a heat source for heating a substrate in a region corresponding to each of the stages;
- a shielding member disposed on a bottom surface of the lower susceptor and configured to suppress thermal energy radiation to the bottom surface of the lower susceptor.
- the substrate susceptor has a radiation space for heat transfer between the lower susceptor and the shield member.
- the shielding member includes a plate-shaped shielding plate having a reflective coating film formed on an upper surface in contact with the radiation space, and the shielding plate is disposed to correspond to the stage.
- the shielding plate has a curved upper surface or an inclined upper surface.
- the shielding plate has patterns on the top surface in the form of concave and convex concave or convex in order to concentrate the radiation angle of thermal energy in a specific section.
- the substrate susceptor has a gap for radiating the heat source of the heating element between the upper susceptor and the lower susceptor positioned below the stage.
- the voids are filled with a silicon carbide-based material mixed with carbon nanotubes having a high heat capacity and a low thermal conductivity.
- the substrate susceptor for achieving the above object is an upper susceptor having a plurality of stages on which the substrate is placed on a concentric circle; A lower susceptor coupled to a lower surface of the upper susceptor and provided with a heating element providing a heat source for heating the substrate; And a shielding plate installed on the bottom of the lower susceptor to correspond to each of the stages, and re-supplying heat energy radiated to the bottom of the lower susceptor to the lower susceptor to increase thermal efficiency.
- the substrate susceptor is formed between the upper susceptor and the lower susceptor positioned below the stage to form a first gap for uniformly transferring the thermal energy of the heating element, the lower stand A second gap is formed between the acceptor and the shield plate to transfer heat energy reflected from the shield plate to the lower susceptor.
- the shielding plate has a reflective coating on the upper surface in contact with the second gap, the upper surface of the shielding plate in the form of intaglio or embossed concave and convex shape that can concentrate the radiation angle of thermal energy in a specific section. Patterns are formed.
- FIG. 1 is a view for explaining an atomic layer deposition apparatus according to the present invention.
- FIG. 2 and 3 are a perspective view and a cross-sectional view of the injection member shown in FIG.
- FIG. 4 is a perspective view of the substrate susceptor shown in FIG. 1.
- 5 is a sectional view of principal parts of the substrate susceptor.
- 6 to 9 are views showing various modifications of the shielding member.
- FIG. 10 is a view for explaining a shield member according to another embodiment of the present invention.
- FIG. 11 is a view showing a modification of the shielding member shown in FIG. 10.
- FIG. 12 is a view showing another embodiment of the shielding member.
- FIG. 13 is a view showing another embodiment of the shielding member.
- FIG. 1 is a schematic view showing an atomic layer deposition apparatus according to the present invention.
- 2 is a perspective view of the injection member of FIG. 1
- FIG. 3 is a cross-sectional view of the injection member of FIG. 1.
- 4 is a perspective view of the substrate susceptor of FIG. 1.
- the atomic layer deposition apparatus 10 includes a process chamber 100, a substrate susceptor 200 that is a substrate support member, an injection member 300, and a supply.
- the member 400 is included.
- One side of the process chamber 100 is provided with an entrance 112. During the process, the substrates W enter and exit the process chamber 100 through the inlet 112.
- an exhaust duct 120 and an exhaust pipe 114 for exhausting the reaction gas and the purge gas and the reaction dispersion generated during the atomic layer deposition process are provided at the upper edge of the process chamber 100. Can be provided.
- the exhaust duct 120 is located outside the injection member 300 and is provided in a ring shape.
- the exhaust pipe 114 may be provided with a vacuum pump, a pressure control valve, an on-off valve, a flow control valve.
- the injection member 300 injects gas into each of four substrates placed on the substrate susceptor 200.
- the injection member 300 receives the first and second reaction gases and the purge gas from the supply member 400.
- the injection member 300 is provided to inject the gas provided from the supply member 400 to the entire processing surface of the substrate at a position corresponding to each of the substrates.
- the injection member 300 has a head 310 and a shaft 330.
- the head 310 has first to fourth baffles 320a-320d.
- the shaft 330 is installed at the upper center of the process chamber 100 and supports the head 310.
- the head 310 has a disk shape, and the first to fourth baffles 320a to 320d have an independent space for accommodating gas in the head 310.
- the first to fourth baffles 320a to 320d have a fan shape partitioned at intervals of 90 degrees sequentially based on the center of the head 310.
- Gas injection holes 312 are formed at the bottoms of the first to fourth baffles 320a to 320d. Gases provided from the supply member 400 are supplied to the independent spaces of each of the first to fourth baffles 320a to 320d, which are sprayed through the gas ejection ports 312 to be provided to the substrate.
- Some of each of the baffles 320a-320d may supply different kinds of gases.
- some of the baffles 320a-320d may supply the same kind of gas to each other.
- a first reaction gas is provided to the first baffle 320a
- a second reaction gas is provided to the third baffle 320c facing the first baffle 320a
- a second baffle 320b is provided.
- the fourth baffle 320d may be provided with a purge gas to prevent mixing of the first reaction gas and the second reaction gas and to purge the unreacted gas.
- the head 310 is formed in a fan shape with the first to fourth baffles 320a to 320d spaced at 90 degree intervals.
- the present invention is not limited thereto, and the number of baffles may be provided in a number less than four or more than four depending on the process purpose or characteristics.
- eight baffles may be provided and arranged at 45 degree intervals.
- two baffles may be provided and arranged at 180 degree intervals.
- all of the baffles or some of the baffles may be provided differently in size.
- the supply member 400 includes a first gas supply member 410a, a second gas supply member 410b, and a purge gas supply member 420.
- the first gas supply member 410a supplies the first reaction gas for forming a predetermined thin film on the substrate w to the first baffle 320a.
- the second gas supply member 410b supplies the second reaction gas to the third baffle 320c.
- the purge gas supply member 420 supplies the purge gas to the second and fourth baffles 320b and 320d.
- the purge gas supply member 420 continuously supplies the purge gas at a constant flow rate, but the first gas supply member 410a and the second gas supply member 410b are operated at high pressure by using high pressure charging tanks (not shown).
- the filled reaction gas can be released in a short time (flash supply method) to diffuse onto the substrate.
- two gas supply members are used to supply two different reaction gases, but a plurality of gas supply members may be applied to supply three or more different reaction gases according to process characteristics.
- the substrate susceptor 200 is installed in an internal space of the process chamber 100.
- the substrate susceptor 200 is of a batch type in which four substrates are placed.
- the substrate susceptor 200 is rotated by the driver 290.
- the driving unit 290 for rotating the substrate susceptor 200 may use a stepping motor provided with an encoder capable of controlling the rotation speed and the rotation speed of the driving motor.
- the encoder controls the cycle time of the injection member 300 (first reaction gas-purge gas-second reaction gas-purge gas).
- substrate susceptors 200 may be applied instead of four.
- the substrate susceptor 200 may include a plurality of lift pins (not shown) that raise and lower the substrate W at each stage.
- the lift pins lift and lower the substrate W to space the substrate W away from the stage of the substrate susceptor 200 or to rest on the stage.
- the substrate susceptor 200 includes an upper susceptor 210, a lower susceptor 220, a heating element 230, a shielding member 240, and a support pillar 280.
- the upper susceptor 210 is coupled to be superimposed on the upper portion of the lower susceptor 220 in the shape of a disc formed with first to fourth stages 212a-212d on which substrates are placed.
- the first to fourth stages 212a-212d provided in the upper susceptor 210 may be provided in a circle similar to the shape of the substrate.
- the first to fourth stages 212a-212d are disposed at intervals of 90 degrees on the concentric circles about the center of the substrate susceptor 200.
- the lower susceptor 220 has a heating element 230 that heats the substrate W seated on each stage 212a-212d of the upper susceptor 210.
- the heating wire may be used as the heating element 230.
- the heating element 230 is positioned in the insertion groove 228 formed on the upper surface of the lower susceptor 220 while being supported by the holder 232.
- the holder 232 may be installed in the entire heating element 230.
- the holder 232 may be installed at a predetermined length or at a predetermined angle (for example, 90 degrees or 45 degrees) to fix the heating element 230.
- the heating element 230 heats the upper susceptor 210 and the lower susceptor 220 to raise the temperature of the substrate W to a predetermined temperature (process temperature).
- the heating element 230 increases the temperature of the stage region in which the substrate is placed by varying the arrangement of the heating lines in the stage region where the substrate is placed (closely arranged hot wire) and the other region (distribute the heating wire), while the other region is low. It is possible to maintain the thin film deposition only on the substrate.
- the first air gap 250 of several millimeters (mm) is provided between the upper susceptor 210 and the lower susceptor 220, and between the lower susceptor 220 and the shielding member 240.
- the second air gap 260 of several millimeters (mm) is provided.
- the first gap 250 is formed between the upper susceptor 210 and the lower susceptor 220 positioned below the stage.
- the thermal energy of the heating element 230 is transmitted to the upper susceptor 210 by the first pore 250 in a radiation transfer manner rather than a conduction manner, thereby improving the temperature uniformity of the upper susceptor 210.
- the heat transfer rate may be increased by mounting a heat transfer sheet made of a silicon carbide-based material having a high heat capacity and low heat conductivity in the first pore 250.
- a mixture of carbon nanotubes that transmit heat in one direction to silicon carbide is used as a single layer or a double layer. It is possible to control the heat transfer rate of each zone.
- the shielding member 240 blocks a portion of thermal energy generated by the heating element 230 mounted on the upper surface of the lower susceptor 220 from being radiated to the bottom surface of the lower susceptor 220 to be lost. do.
- the shielding member 240 is installed on the bottom of the lower susceptor 220. Between the shielding member 240 and the lower susceptor 220, a second gap 260, which is a radiation space for heat transfer, is formed.
- the shielding member 240 is disposed on the bottom surface of the lower susceptor 220 corresponding to the stage at intervals of 90 degrees on a concentric circle about the center of the substrate susceptor 200 in the same manner as the stage.
- the shielding member 240 is a circular plate-shaped shielding plate 241 coated with a reflective coating film 244 to re-supply heat energy radiated to the bottom of the lower susceptor 220 to the lower susceptor 220 to increase thermal efficiency.
- the shielding plate 241 is made of a material having a low heat capacity such as quarts, and a thin film (reflective coating film) 244 of thermally and chemically stable platinum, molybdenum, etc. may be coated on the surface thereof to increase reflection efficiency.
- the shielding plate 241 may be formed in various shapes in addition to the flat plate shape as shown in FIG.
- 6 to 9 are views showing various modifications of the shielding member.
- the shielding plate 241 may be formed concave or convex.
- the rereflection angle of the radiant energy may be concentrated in the center.
- the rereflection angle of the radiant energy may be concentrated at the edge.
- the shape of the shield plate 241 may be variously changed so that the reflection angle of the radiant energy may be concentrated in a specific zone to further increase the temperature of the specific zone.
- patterns of concave-convex shapes may be formed on the upper surface of the shielding plate 241 of the shielding member 240c.
- the patterns improve the re-reflection efficiency of radiant energy radiated from the bottom of the lower susceptor 220 and adjust the re-reflection angle.
- the shielding member 240c may increase the temperature and reflectance of a specific zone by using patterns.
- the pattern may be intaglio or embossed.
- the pattern may have various shapes such as a dot, a polygon, a V, and a cone.
- the shielding member 240d of FIG. 9 may be configured to focus the reflection angle of the radiant energy to a specific area by varying the shape of the pattern on the upper surface of the shielding plate 241 near the center and the edge.
- the shielding member 240e is installed on the upper surface of the lower susceptor 220.
- the shielding member 240e reflects the radiant energy emitted from the bottom surface of the upper susceptor 210 and the lower radiant energy of the heating element.
- the heating element 230 is positioned higher than the upper surface of the lower susceptor 220 so as to be exposed to the first gap.
- the radiant energy emitted from the heating element 230 toward the upper surface of the lower susceptor 220 may be reflected toward the upper susceptor 210. It can increase the thermal efficiency.
- FIG. 11 is a view showing a modification of FIG. 10, in which a heating element 230 is directly installed on an upper surface of the shielding member 240f and positioned on an upper surface of the lower susceptor.
- the heating element 230 is formed by holders 232.
- the upper surface of the shielding member 240f is fixed, and the holders 232 may be installed on the heating element 230 at predetermined intervals or at predetermined angles.
- the shielding members 240g and 240h seal the circular plate-shaped shielding plate 241 coated with the reflective coating film 244, and the shielding plate 241 to seal and heat transfer thereon.
- the case 249 is made of a transparent quartz material, and the case 249 prevents invasion of process gas (reaction gas) to prevent contamination of the shielding plate 241 and the reflective coating film 244, abnormal reactions, reduction of reflectance due to impurities, and the like. Can be prevented.
- the shielding member 240g having such a structure may be installed on the upper surface of the lower susceptor 220 as shown in FIG. 8, and in this case, the heating element 230 is installed on the upper surface of the case 249 of the shielding member.
- the shielding member 240h having the above-described structure may be installed on the bottom surface of the lower susceptor 220, and the shielding member 240h may be shielded because it has a radiation space for heat transfer on its own.
- the member 240h and the lower susceptor 220 are closely installed without providing a separate space.
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Abstract
Description
Claims (18)
- 증착 장치에 있어서:공정 챔버;상기 공정 챔버에 설치되고 동일 평면상에 복수의 기판이 놓여지는 기판 서셉터; 및상기 기판 서셉터에 놓여진 복수의 기판들 각각에 대응하는 위치에서 기판의 처리면 전체에 가스를 분사하는 분사부재를 포함하되;상기 기판 서셉터는상부면에 기판들이 놓여지는 스테이지들이 형성된 상부 서셉터;상기 상부 서셉터 저면에 결합되고 상기 스테이지들 각각에 대응되는 영역에 기판을 가열하기 위한 열원을 제공하는 발열체가 설치된 하부 서셉터; 및상기 하부 서셉터의 저면에 설치되고, 상기 하부 서셉터 저면으로의 열 에너지 방사를 억제하기 위한 차폐부재를 포함하는 것을 특징으로 하는 증착 장치.
- 제 1 항에 있어서,상기 기판 서셉터는상기 하부 서셉터와 상기 차폐 부재 사이에 열전달을 위한 복사공간을 갖는 것을 특징으로 하는 증착 장치.
- 제 2 항에 있어서,상기 차폐부재는상기 복사공간과 접하는 상면에 반사 코팅막이 형성된 플레이트 형상의 차폐판을 포함하며,상기 차폐판은 상기 스테이지와 대응되게 배치되는 것을 특징으로 하는 증착 장치.
- 제 3 항에 있어서,상기 차폐판은 만곡진 상면 또는 경사진 상면을 갖는 것을 특징으로 하는 증착 장치.
- 제 3 항에 있어서,상기 차폐판은 오목하거나 볼록한 상면을 갖는 것을 특징으로 하는 증착 장치.
- 제 3 항에 있어서,상기 차폐판은 상면에 열에너지의 방사각도를 특정구간에 집중할 수 있는 음각 또는 양각의 요철형태로 이루어지는 패턴들이 형성된 것을 특징으로 하는 증착 장치.
- 제 2 항에 있어서,상기 기판 서셉터는상기 스테이지 아래에 위치되는 상기 상부 서셉터와 상기 하부 서셉터 사이에 상기 발열체의 열원을 복사방식으로 전달하기 위한 공극이 형성되어 있는 것을 특징으로 하는 증착 장치.
- 제 7 항에 있어서,상기 공극에는 열용량이 크고 열전도도 낮은 탄화규소계 물질로 충전되어 있는 것을 특징으로 하는 증착 장치.
- 증착 장치에 있어서:공정 챔버;상기 공정 챔버에 설치되고 동심원상에 기판이 놓여지는 복수개의 스테이지를 갖는 기판 서셉터;반응가스를 공급하는 복수개의 가스공급부재;퍼지가스를 공급하는 퍼지가스 공급부재;상기 복수개의 가스 공급부와 상기 퍼지가스 공급부재로부터 제공받은 반응가스 및 퍼지가스를 상기 스테이지들 각각에 놓여진 기판과 대응하는 위치에서 기판의 처리면 전체에 독립적으로 분사할 수 있도록 복수개의 독립된 배플들을 갖는 분사부재; 및상기 분사부재의 배플들이 상기 스테이지에 놓여진 복수개의 기판들 각각으로 순차 선회하도록 상기 기판 서셉터 또는 상기 분사부재를 회전시키는 구동부를 포함하되;상기 기판 서셉터는상기 스테이지들이 형성된 상부 서셉터;상기 상부 서셉터 저면에 결합되고 기판을 가열하기 위한 열원을 제공하는 발열체가 설치된 하부 서셉터; 및상기 하부 서셉터의 저면에 상기 스테이지들 각각에 대응되게 설치되고, 상기 하부 서셉터 저면으로 방사되는 열에너지를 상기 하부 서셉터 측으로 재공급하여 열효율을 높이기 위한 차폐판를 포함하는 것을 특징으로 하는 증착 장치.
- 제 9 항에 있어서,상기 기판 서셉터는상기 스테이지 아래에 위치되는 상기 상부 서셉터와 상기 하부 서셉터 사이에 상기 발열체의 열에너지를 균일하게 전달하기 위한 제1공극이 형성되며,상기 하부 서셉터와 상기 차폐 부재 사이에 상기 차폐부재로부터 반사되는 열에너지를 상기 하부 서셉터로 전달하기 위한 제2공극이 형성되어 있는 것을 특징으로 하는 증착 장치.
- 제 10 항에 있어서,상기 차폐판은 반사코팅층이 형성된 오목하거나 볼록한 상면을 갖는 것을 특징으로 하는 증착 장치.
- 제 11 항에 있어서,상기 차폐판의 상면에는 음각 또는 양각의 요철형태로 이루어지는 패턴들이 형성된 것을 특징으로 하는 증착 장치.
- 기판 서셉터에 있어서:동심원상에 기판이 놓여지는 복수개의 스테이지를 갖는 상부 서셉터;상기 상부 서셉터 저면에 결합되는 하부 서셉터;상기 하부 서셉터와 상기 상부 서셉터 사이에 설치되고 기판을 가열하기 위한 열원을 제공하는 발열체; 및상기 하부 서셉터에 상기 스테이지들 각각에 대응되게 설치되고, 상면에 반사 코팅막을 갖으며, 상기 하부 서셉터로부터 방사되는 열에너지를 상기 상부 서셉터 측으로 재공급하여 열효율을 높이기 위한 차폐부재를 포함하는 것을 특징으로 하는 기판 서셉터.
- 제 13 항에 있어서,상기 기판 서셉터는상기 스테이지 아래에 위치되는 상기 상부 서셉터와 상기 하부 서셉터 사이에 상기 차폐부재가 설치되는 제1공극을 갖으며,상기 발열체는 상기 차폐부재 상면에 설치되는 것을 특징으로 하는 기판 서셉터.
- 제 13 항에 있어서,상기 차폐부재는상기 반사 코팅막이 상면에 형성된 플레이트 형상의 차폐판과, 상기 차폐판을 밀봉하는 투명한 케이스를 포함하며,상기 발열체는 상기 차폐부재의 케이스 상면에 설치되는 것을 특징으로 하는 기판 서셉터.
- 제 13 항에 있어서,상기 차폐부재는상기 반사 코팅막이 상면에 형성된 플레이트 형상의 차폐판과, 상기 차폐판을 밀봉하는 투명한 케이스를 포함하며,상기 차폐부재는 상기 하부 서셉터의 저면에 설치되는 것을 특징으로 하는 기판 서셉터.
- 제 15 항 또는 제 16 항에 있어서,상기 차폐부재는상기 차폐판의 반사 코팅막과 상기 케이스 사이에 제2공극이 형성되어 있는 것을 특징으로 하는 기판 서셉터.
- 제 13 항에 있어서,상기 차폐부재는 상기 반사 코팅막이 형성된 상면에 열에너지의 방사각도를 특정구간에 집중할 수 있는 음각 또는 양각의 요철형태로 이루어지는 패턴들이 형성된 것을 특징으로 하는 기판 서셉터.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013211521A (ja) * | 2012-03-02 | 2013-10-10 | Stanley Electric Co Ltd | 気相成長装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5423529B2 (ja) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
KR102113734B1 (ko) * | 2012-12-12 | 2020-05-21 | 엘지이노텍 주식회사 | 화학 기상 증착 장치용 서셉터 및 이를 구비한 화학 기상 증착 장치 |
KR102164707B1 (ko) * | 2013-08-14 | 2020-10-13 | 삼성디스플레이 주식회사 | 원자층 증착 방법 및 원자층 증착 장치 |
US11549181B2 (en) | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
KR102297567B1 (ko) * | 2014-09-01 | 2021-09-02 | 삼성전자주식회사 | 가스 주입 장치 및 이를 포함하는 박막 증착 장비 |
US10954597B2 (en) * | 2015-03-17 | 2021-03-23 | Asm Ip Holding B.V. | Atomic layer deposition apparatus |
US10161041B2 (en) | 2015-10-14 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermal chemical vapor deposition system and operating method thereof |
US10428425B2 (en) * | 2016-01-26 | 2019-10-01 | Tokyo Electron Limited | Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium |
JP6521475B2 (ja) * | 2016-03-25 | 2019-05-29 | 株式会社Kokusai Electric | 基板支持台、基板処理装置および半導体装置の製造方法 |
KR102411077B1 (ko) | 2016-06-07 | 2022-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 균일성을 위한 윤곽 포켓 및 하이브리드 서셉터 |
TWI671429B (zh) | 2016-07-02 | 2019-09-11 | 美商應用材料股份有限公司 | 在空間ald處理腔室中用以增加沉積均勻性的裝置 |
US11621180B2 (en) | 2016-10-31 | 2023-04-04 | Nissin Ion Equipment Co., Ltd. | Heating device |
JP6296189B1 (ja) | 2016-10-31 | 2018-03-20 | 日新イオン機器株式会社 | 加熱装置、半導体製造装置 |
CN107507793B (zh) * | 2017-08-18 | 2020-02-04 | 深圳市华星光电技术有限公司 | 蚀刻设备 |
TWI768849B (zh) * | 2017-10-27 | 2022-06-21 | 美商應用材料股份有限公司 | 具有空間分離的單個晶圓處理環境 |
US10755955B2 (en) * | 2018-02-12 | 2020-08-25 | Applied Materials, Inc. | Substrate transfer mechanism to reduce back-side substrate contact |
US11447865B2 (en) | 2020-11-17 | 2022-09-20 | Applied Materials, Inc. | Deposition of low-κ films |
CN113539893A (zh) * | 2021-05-11 | 2021-10-22 | 北京北方华创微电子装备有限公司 | 一种用于半导体工艺腔室的加热装置和半导体设备 |
US20230130756A1 (en) * | 2021-10-22 | 2023-04-27 | Applied Materials, Inc. | Bottom cover plate to reduce wafer planar nonuniformity |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100244954B1 (ko) * | 1995-04-28 | 2000-02-15 | 니시히라 순지 | 씨브이디(cvd) 장치의 가열장치 |
KR100260119B1 (ko) * | 1993-06-24 | 2000-07-01 | 히가시 데쓰로 | 반도체 처리장치 |
KR100687378B1 (ko) * | 1998-03-26 | 2007-02-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 다층 합금 히터 어셈블리 및 관련 방법 |
KR20100077695A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | 원자층 증착장치 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4579080A (en) * | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
JPH08139046A (ja) | 1994-11-09 | 1996-05-31 | Hitachi Ltd | 熱処理装置 |
JP2975885B2 (ja) * | 1996-02-01 | 1999-11-10 | キヤノン販売株式会社 | ガス分散器及びプラズマ処理装置 |
JP4059990B2 (ja) | 1998-09-30 | 2008-03-12 | 大陽日酸株式会社 | 気相成長装置 |
KR100319494B1 (ko) | 1999-07-15 | 2002-01-09 | 김용일 | 원자층 에피택시 공정을 위한 반도체 박막 증착장치 |
JP4817210B2 (ja) | 2000-01-06 | 2011-11-16 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US6436796B1 (en) * | 2000-01-31 | 2002-08-20 | Mattson Technology, Inc. | Systems and methods for epitaxial processing of a semiconductor substrate |
JP4083512B2 (ja) * | 2002-08-30 | 2008-04-30 | 東京エレクトロン株式会社 | 基板処理装置 |
JP4640938B2 (ja) * | 2002-11-22 | 2011-03-02 | アプライド マテリアルズ インコーポレイテッド | 裏側加熱チャンバ |
US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
JP5031013B2 (ja) * | 2008-11-19 | 2012-09-19 | 東京エレクトロン株式会社 | 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体 |
TWI465599B (zh) | 2008-12-29 | 2014-12-21 | K C Tech Co Ltd | 原子層沉積裝置 |
-
2010
- 2010-07-28 KR KR1020100072963A patent/KR101205433B1/ko active IP Right Grant
-
2011
- 2011-03-16 US US13/811,989 patent/US9567673B2/en active Active
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- 2011-03-16 CN CN201180036834.2A patent/CN103026465B/zh active Active
- 2011-03-16 WO PCT/KR2011/001819 patent/WO2012015140A1/ko active Application Filing
- 2011-07-06 TW TW100123909A patent/TWI500811B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100260119B1 (ko) * | 1993-06-24 | 2000-07-01 | 히가시 데쓰로 | 반도체 처리장치 |
KR100244954B1 (ko) * | 1995-04-28 | 2000-02-15 | 니시히라 순지 | 씨브이디(cvd) 장치의 가열장치 |
KR100687378B1 (ko) * | 1998-03-26 | 2007-02-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 다층 합금 히터 어셈블리 및 관련 방법 |
KR20100077695A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | 원자층 증착장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013211521A (ja) * | 2012-03-02 | 2013-10-10 | Stanley Electric Co Ltd | 気相成長装置 |
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JP2013535833A (ja) | 2013-09-12 |
TWI500811B (zh) | 2015-09-21 |
KR20120011232A (ko) | 2012-02-07 |
JP5639712B2 (ja) | 2014-12-10 |
KR101205433B1 (ko) | 2012-11-28 |
US20130118407A1 (en) | 2013-05-16 |
CN103026465B (zh) | 2015-08-19 |
TW201204867A (en) | 2012-02-01 |
CN103026465A (zh) | 2013-04-03 |
US9567673B2 (en) | 2017-02-14 |
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