JPWO2020031971A1 - ＳｉＣ半導体装置 - Google Patents

ＳｉＣ半導体装置 Download PDF

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Publication number
JPWO2020031971A1
JPWO2020031971A1 JP2020535763A JP2020535763A JPWO2020031971A1 JP WO2020031971 A1 JPWO2020031971 A1 JP WO2020031971A1 JP 2020535763 A JP2020535763 A JP 2020535763A JP 2020535763 A JP2020535763 A JP 2020535763A JP WO2020031971 A1 JPWO2020031971 A1 JP WO2020031971A1
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region
trench
main surface
layer
source
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Japanese (ja)
Inventor
佑紀 中野
佑紀 中野
明田　正俊
正俊 明田
拓生 坂口
拓生 坂口
悠一郎 南園
悠一郎 南園
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Rohm Co Ltd
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Rohm Co Ltd
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Publication of JPWO2020031971A1 publication Critical patent/JPWO2020031971A1/ja
Priority to JP2023177150A priority Critical patent/JP2023179690A/ja
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    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11894468B2 (en) * 2018-11-06 2024-02-06 Cornell University High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same
CN111446293A (zh) * 2020-03-25 2020-07-24 浙江大学 一种增强体二极管的碳化硅功率mosfet器件
TWI752512B (zh) * 2020-05-29 2022-01-11 國立陽明交通大學 溝槽式電晶體及其製造方法
JP2021197420A (ja) * 2020-06-11 2021-12-27 富士電機株式会社 炭化珪素半導体装置
JP7470071B2 (ja) * 2020-07-22 2024-04-17 株式会社東芝 半導体装置
KR102321229B1 (ko) * 2021-03-30 2021-11-03 주식회사 쎄닉 탄화규소 웨이퍼 및 이를 적용한 반도체 소자
EP4250370A1 (de) * 2022-03-24 2023-09-27 Infineon Technologies Austria AG Transistorvorrichtung
WO2023189057A1 (ja) * 2022-03-31 2023-10-05 ローム株式会社 ＳｉＣ半導体装置
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WO2023189054A1 (ja) * 2022-03-31 2023-10-05 ローム株式会社 半導体装置
WO2024053022A1 (ja) * 2022-09-07 2024-03-14 三菱電機株式会社 半導体装置およびその製造方法
JP2024046362A (ja) * 2022-09-22 2024-04-03 株式会社 日立パワーデバイス 半導体装置
WO2024070164A1 (ja) * 2022-09-29 2024-04-04 ローム株式会社 半導体装置
CN115513297B (zh) * 2022-11-09 2023-09-22 中芯越州集成电路制造(绍兴)有限公司 碳化硅平面mosfet器件及其制造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503894A (ja) * 2004-06-22 2008-02-07 クリー　インコーポレイテッド 炭化ケイ素デバイスおよびその作製方法
JP2011009387A (ja) * 2009-06-24 2011-01-13 Renesas Electronics Corp 半導体装置およびその製造方法ならびにそれを用いたｄｃ−ｄｃコンバータ
JP2014082521A (ja) * 2010-04-06 2014-05-08 Mitsubishi Electric Corp 電力用半導体装置
WO2014103256A1 (ja) * 2012-12-28 2014-07-03 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2014103186A1 (ja) * 2012-12-27 2014-07-03 パナソニック株式会社 炭化珪素半導体装置およびその製造方法
WO2016002083A1 (ja) * 2014-07-04 2016-01-07 株式会社日立製作所 半導体装置、パワーモジュールおよび電力変換装置
WO2016080322A1 (ja) * 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
JP2018110166A (ja) * 2016-12-28 2018-07-12 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080116512A1 (en) * 2006-11-21 2008-05-22 Kabushiki Kaisha Toshiba Semiconductor device and method of making the same
US8076719B2 (en) * 2008-02-14 2011-12-13 Maxpower Semiconductor, Inc. Semiconductor device structures and related processes
JP2011044513A (ja) * 2009-08-20 2011-03-03 National Institute Of Advanced Industrial Science & Technology 炭化珪素半導体装置
JP5633992B2 (ja) * 2010-06-11 2014-12-03 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法
JP5858933B2 (ja) * 2011-02-02 2016-02-10 ローム株式会社 半導体装置
JP5742657B2 (ja) * 2011-10-20 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
WO2014057700A1 (ja) * 2012-10-11 2014-04-17 三菱電機株式会社 半導体装置およびその製造方法
JP6291988B2 (ja) * 2014-04-15 2018-03-14 住友電気工業株式会社 炭化珪素半導体装置
JP6354525B2 (ja) * 2014-11-06 2018-07-11 株式会社デンソー 炭化珪素半導体装置の製造方法
DE102014117780B4 (de) * 2014-12-03 2018-06-21 Infineon Technologies Ag Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung
DE102015103072B4 (de) * 2015-03-03 2021-08-12 Infineon Technologies Ag Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet
DE102015103070B4 (de) * 2015-03-03 2021-09-23 Infineon Technologies Ag Leistungshalbleitervorrichtung mit trenchgatestrukturen mit zu einer hauptkristallrichtung geneigten längsachsen und herstellungsverfahren
JP6740759B2 (ja) * 2016-07-05 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6696328B2 (ja) * 2016-07-05 2020-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6828449B2 (ja) * 2017-01-17 2021-02-10 株式会社デンソー 半導体装置およびその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503894A (ja) * 2004-06-22 2008-02-07 クリー　インコーポレイテッド 炭化ケイ素デバイスおよびその作製方法
JP2011009387A (ja) * 2009-06-24 2011-01-13 Renesas Electronics Corp 半導体装置およびその製造方法ならびにそれを用いたｄｃ−ｄｃコンバータ
JP2014082521A (ja) * 2010-04-06 2014-05-08 Mitsubishi Electric Corp 電力用半導体装置
WO2014103186A1 (ja) * 2012-12-27 2014-07-03 パナソニック株式会社 炭化珪素半導体装置およびその製造方法
WO2014103256A1 (ja) * 2012-12-28 2014-07-03 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
WO2016002083A1 (ja) * 2014-07-04 2016-01-07 株式会社日立製作所 半導体装置、パワーモジュールおよび電力変換装置
WO2016080322A1 (ja) * 2014-11-18 2016-05-26 ローム株式会社 半導体装置および半導体装置の製造方法
JP2018110166A (ja) * 2016-12-28 2018-07-12 富士電機株式会社 半導体装置および半導体装置の製造方法

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