JPWO2019236320A5 - - Google Patents

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JPWO2019236320A5
JPWO2019236320A5 JP2020568337A JP2020568337A JPWO2019236320A5 JP WO2019236320 A5 JPWO2019236320 A5 JP WO2019236320A5 JP 2020568337 A JP2020568337 A JP 2020568337A JP 2020568337 A JP2020568337 A JP 2020568337A JP WO2019236320 A5 JPWO2019236320 A5 JP WO2019236320A5
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angstroms
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single crystal
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JP2021527326A (ja
JP7123182B2 (ja
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Priority to JP2023149211A priority patent/JP2023175814A/ja
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JP2020568337A 2018-06-08 2019-05-23 シリコン箔層の移転方法 Active JP7123182B2 (ja)

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JP2022127032A JP7351987B2 (ja) 2018-06-08 2022-08-09 シリコン箔層の移転方法
JP2023149211A JP2023175814A (ja) 2018-06-08 2023-09-14 シリコン箔層の移転方法

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US201862682228P 2018-06-08 2018-06-08
US62/682,228 2018-06-08
PCT/US2019/033807 WO2019236320A1 (en) 2018-06-08 2019-05-23 Method for transfer of a thin layer of silicon

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JP2021527326A JP2021527326A (ja) 2021-10-11
JPWO2019236320A5 true JPWO2019236320A5 (ko) 2022-05-30
JP7123182B2 JP7123182B2 (ja) 2022-08-22

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JP2022127032A Active JP7351987B2 (ja) 2018-06-08 2022-08-09 シリコン箔層の移転方法
JP2023149211A Pending JP2023175814A (ja) 2018-06-08 2023-09-14 シリコン箔層の移転方法

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US (3) US10818540B2 (ko)
EP (2) EP4210092A1 (ko)
JP (3) JP7123182B2 (ko)
KR (2) KR102463727B1 (ko)
CN (1) CN112262467B (ko)
SG (1) SG11202011553SA (ko)
TW (3) TWI779197B (ko)
WO (1) WO2019236320A1 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN112582332A (zh) * 2020-12-08 2021-03-30 上海新昇半导体科技有限公司 一种绝缘体上硅结构及其方法

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