SG11202011553SA - Method for transfer of a thin layer of silicon - Google Patents

Method for transfer of a thin layer of silicon

Info

Publication number
SG11202011553SA
SG11202011553SA SG11202011553SA SG11202011553SA SG11202011553SA SG 11202011553S A SG11202011553S A SG 11202011553SA SG 11202011553S A SG11202011553S A SG 11202011553SA SG 11202011553S A SG11202011553S A SG 11202011553SA SG 11202011553S A SG11202011553S A SG 11202011553SA
Authority
SG
Singapore
Prior art keywords
silicon
transfer
thin layer
thin
layer
Prior art date
Application number
SG11202011553SA
Inventor
Salvador Zepeda
Gaurab Samanta
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11202011553SA publication Critical patent/SG11202011553SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
SG11202011553SA 2018-06-08 2019-05-23 Method for transfer of a thin layer of silicon SG11202011553SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862682228P 2018-06-08 2018-06-08
PCT/US2019/033807 WO2019236320A1 (en) 2018-06-08 2019-05-23 Method for transfer of a thin layer of silicon

Publications (1)

Publication Number Publication Date
SG11202011553SA true SG11202011553SA (en) 2020-12-30

Family

ID=66858018

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011553SA SG11202011553SA (en) 2018-06-08 2019-05-23 Method for transfer of a thin layer of silicon

Country Status (8)

Country Link
US (3) US10818540B2 (en)
EP (2) EP4210092A1 (en)
JP (3) JP7123182B2 (en)
KR (2) KR102463727B1 (en)
CN (1) CN112262467A (en)
SG (1) SG11202011553SA (en)
TW (3) TWI815635B (en)
WO (1) WO2019236320A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN112582332A (en) * 2020-12-08 2021-03-30 上海新昇半导体科技有限公司 Silicon-on-insulator structure and method thereof

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Also Published As

Publication number Publication date
KR102463727B1 (en) 2022-11-07
US20190378753A1 (en) 2019-12-12
TW202001009A (en) 2020-01-01
TW202346665A (en) 2023-12-01
US20220375784A1 (en) 2022-11-24
EP3803961A1 (en) 2021-04-14
JP2021527326A (en) 2021-10-11
JP7351987B2 (en) 2023-09-27
EP3803961B1 (en) 2023-03-22
CN112262467A (en) 2021-01-22
US20210005508A1 (en) 2021-01-07
TWI815635B (en) 2023-09-11
JP2022172125A (en) 2022-11-15
TW202305199A (en) 2023-02-01
KR20210019463A (en) 2021-02-22
US10818540B2 (en) 2020-10-27
JP7123182B2 (en) 2022-08-22
JP2023175814A (en) 2023-12-12
EP4210092A1 (en) 2023-07-12
US11443978B2 (en) 2022-09-13
KR20220153669A (en) 2022-11-18
WO2019236320A1 (en) 2019-12-12
TWI779197B (en) 2022-10-01

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