SG11202009335RA - Method for transferring a piezoelectric layer onto a support substrate - Google Patents
Method for transferring a piezoelectric layer onto a support substrateInfo
- Publication number
- SG11202009335RA SG11202009335RA SG11202009335RA SG11202009335RA SG11202009335RA SG 11202009335R A SG11202009335R A SG 11202009335RA SG 11202009335R A SG11202009335R A SG 11202009335RA SG 11202009335R A SG11202009335R A SG 11202009335RA SG 11202009335R A SG11202009335R A SG 11202009335RA
- Authority
- SG
- Singapore
- Prior art keywords
- transferring
- support substrate
- piezoelectric layer
- layer onto
- onto
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1852573A FR3079346B1 (en) | 2018-03-26 | 2018-03-26 | METHOD FOR MANUFACTURING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER |
| PCT/FR2019/050645 WO2019186032A1 (en) | 2018-03-26 | 2019-03-21 | Method for transferring a piezoelectric layer onto a support substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202009335RA true SG11202009335RA (en) | 2020-10-29 |
Family
ID=62816717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202009335RA SG11202009335RA (en) | 2018-03-26 | 2019-03-21 | Method for transferring a piezoelectric layer onto a support substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20210020826A1 (en) |
| EP (1) | EP3776641B1 (en) |
| JP (1) | JP7256204B2 (en) |
| KR (1) | KR102671192B1 (en) |
| CN (1) | CN111919290B (en) |
| FR (1) | FR3079346B1 (en) |
| SG (1) | SG11202009335RA (en) |
| WO (1) | WO2019186032A1 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12074581B2 (en) * | 2018-10-16 | 2024-08-27 | Skyworks Solutions, Inc. | Methods and assemblies related to fabrication of acoustic wave devices |
| FR3108788A1 (en) * | 2020-03-24 | 2021-10-01 | Soitec | A method of manufacturing a piezoelectric structure for a radiofrequency device which can be used for the transfer of a piezoelectric layer, and a method of transferring such a piezoelectric layer |
| FR3108789B1 (en) * | 2020-03-24 | 2023-12-08 | Soitec Silicon On Insulator | Method for manufacturing a piezoelectric structure for a radio frequency device and which can be used for the transfer of a piezoelectric layer, and method for transferring such a piezoelectric layer |
| FR3120985B1 (en) | 2021-03-19 | 2023-03-31 | Soitec Silicon On Insulator | Process for manufacturing a heterostructure |
| CN113394338A (en) * | 2021-04-28 | 2021-09-14 | 上海新硅聚合半导体有限公司 | Preparation method of heterogeneous single crystal film and heterogeneous single crystal film |
| FR3131436A1 (en) * | 2021-12-23 | 2023-06-30 | Soitec | METHOD FOR MAKING A DONOR SUBSTRATE |
| FR3131980B1 (en) | 2022-01-17 | 2024-01-12 | Soitec Silicon On Insulator | Method for manufacturing a donor substrate for transferring a piezoelectric layer and method for transferring a piezoelectric layer to a support substrate |
| FR3131979A1 (en) | 2022-01-17 | 2023-07-21 | Soitec | Process for manufacturing a donor substrate for transferring a piezoelectric layer and process for transferring a piezoelectric layer onto a support substrate |
| FR3138239B1 (en) | 2022-07-19 | 2024-06-21 | Soitec Silicon On Insulator | Process for manufacturing a support substrate for radio frequency application |
| WO2024018149A1 (en) | 2022-07-19 | 2024-01-25 | Soitec | Method for manufacturing a support substrate for a radiofrequency application |
| WO2024051945A1 (en) * | 2022-09-08 | 2024-03-14 | Huawei Technologies Co., Ltd. | Surface acoustic wave device, and radio frequency filter and multiplexer comprising the same |
| FR3140474A1 (en) | 2022-09-30 | 2024-04-05 | Soitec | Donor substrate and method of manufacturing a donor substrate for use in a piezoelectric thin film transfer process. |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126733A (en) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment |
| FR2788176B1 (en) | 1998-12-30 | 2001-05-25 | Thomson Csf | GUIDED ACOUSTIC WAVE DEVICE IN A THIN LAYER OF PIEZOELECTRIC MATERIAL ADHESED BY A MOLECULAR ADHESIVE ONTO A CARRIER SUBSTRATE AND MANUFACTURING METHOD |
| US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| JP2002217666A (en) | 2001-01-24 | 2002-08-02 | Hitachi Ltd | Surface acoustic wave element and its manufacturing method |
| KR100944886B1 (en) | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | A method of manufacturing a semiconductor device |
| JP4069640B2 (en) | 2002-02-12 | 2008-04-02 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| US20030186521A1 (en) * | 2002-03-29 | 2003-10-02 | Kub Francis J. | Method of transferring thin film functional material to a semiconductor substrate or optimized substrate using a hydrogen ion splitting technique |
| US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| KR100889886B1 (en) * | 2003-01-07 | 2009-03-20 | 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer |
| US7052978B2 (en) * | 2003-08-28 | 2006-05-30 | Intel Corporation | Arrangements incorporating laser-induced cleaving |
| US7466213B2 (en) * | 2003-10-06 | 2008-12-16 | Nxp B.V. | Resonator structure and method of producing it |
| JP2005229455A (en) | 2004-02-16 | 2005-08-25 | Shin Etsu Chem Co Ltd | Compound piezoelectric substrate |
| FR2889887B1 (en) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | METHOD FOR DEFERING A THIN LAYER ON A SUPPORT |
| JP4686342B2 (en) | 2005-11-30 | 2011-05-25 | 株式会社日立メディアエレクトロニクス | Surface acoustic wave device and communication terminal equipped with the same. |
| JP4811924B2 (en) * | 2006-02-24 | 2011-11-09 | 日本碍子株式会社 | Piezoelectric thin film device |
| JP2009166309A (en) | 2008-01-15 | 2009-07-30 | Konica Minolta Holdings Inc | Inkjet head and method for manufacturing inkjet head |
| FR2926674B1 (en) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING COMPOSITE STRUCTURE WITH STABLE BONDING OXIDE LAYER |
| FR2947098A1 (en) * | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | METHOD OF TRANSFERRING A THIN LAYER TO A TARGET SUBSTRATE HAVING A THERMAL EXPANSION COEFFICIENT DIFFERENT FROM THAT OF THE THIN LAYER |
| EP2333824B1 (en) * | 2009-12-11 | 2014-04-16 | Soitec | Manufacture of thin SOI devices |
| US9608119B2 (en) * | 2010-03-02 | 2017-03-28 | Micron Technology, Inc. | Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures |
| JP5429200B2 (en) | 2010-05-17 | 2014-02-26 | 株式会社村田製作所 | Method for manufacturing composite piezoelectric substrate and piezoelectric device |
| FR2962598B1 (en) * | 2010-07-06 | 2012-08-17 | Commissariat Energie Atomique | METHOD FOR IMPLANTING PIEZOELECTRIC MATERIAL |
| JP5447682B2 (en) * | 2010-09-28 | 2014-03-19 | 株式会社村田製作所 | Method for manufacturing piezoelectric device |
| JP5814774B2 (en) | 2010-12-22 | 2015-11-17 | 日本碍子株式会社 | Composite substrate and method for manufacturing composite substrate |
| CN103765768B (en) | 2011-08-26 | 2016-06-01 | 株式会社村田制作所 | The manufacture method of piezoelectric device and piezoelectric device |
| FR2983342B1 (en) * | 2011-11-30 | 2016-05-20 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A HETEROSTRUCTURE LIMITING THE DEFECT FORMATION AND HETEROSTRUCTURE THUS OBTAINED |
| FR3003692B1 (en) * | 2013-03-25 | 2015-04-10 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A MULTIJUNCTION STRUCTURE FOR A PHOTOVOLTAIC CELL |
| KR20140140188A (en) * | 2013-05-28 | 2014-12-09 | 삼성디스플레이 주식회사 | Donor substrate, method for fabricating the same and method for forming transfer pattern using the same |
| FR3032555B1 (en) * | 2015-02-10 | 2018-01-19 | Soitec | METHOD FOR DEFERRING A USEFUL LAYER |
| WO2017052646A1 (en) * | 2015-09-25 | 2017-03-30 | Intel Corporation | Island transfer for optical, piezo and rf applications |
| FR3042647B1 (en) | 2015-10-20 | 2017-12-01 | Soitec Silicon On Insulator | COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| FR3045678B1 (en) * | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A MONOCRYSTALLINE PIEZOELECTRIC LAYER AND MICROELECTRONIC, PHOTONIC OR OPTICAL DEVICE COMPRISING SUCH A LAYER |
| FR3045933B1 (en) * | 2015-12-22 | 2018-02-09 | Soitec | SUBSTRATE FOR ACOUSTIC SURFACE WAVE OR ACOUSTIC WAVE DEVICE OF TEMPERATURE COMPENSATED VOLUME |
| CN108781064B (en) | 2016-03-25 | 2019-10-11 | 日本碍子株式会社 | Joint method |
| FR3053532B1 (en) * | 2016-06-30 | 2018-11-16 | Soitec | HYBRID STRUCTURE FOR ACOUSTIC SURFACE WAVE DEVICE |
-
2018
- 2018-03-26 FR FR1852573A patent/FR3079346B1/en active Active
-
2019
- 2019-03-21 US US17/041,355 patent/US20210020826A1/en active Pending
- 2019-03-21 CN CN201980021982.3A patent/CN111919290B/en active Active
- 2019-03-21 JP JP2020551934A patent/JP7256204B2/en active Active
- 2019-03-21 SG SG11202009335RA patent/SG11202009335RA/en unknown
- 2019-03-21 EP EP19718438.5A patent/EP3776641B1/en active Active
- 2019-03-21 KR KR1020207029598A patent/KR102671192B1/en active IP Right Grant
- 2019-03-21 WO PCT/FR2019/050645 patent/WO2019186032A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR3079346B1 (en) | 2020-05-29 |
| WO2019186032A1 (en) | 2019-10-03 |
| EP3776641A1 (en) | 2021-02-17 |
| KR102671192B1 (en) | 2024-05-31 |
| EP3776641C0 (en) | 2024-05-15 |
| CN111919290B (en) | 2024-03-01 |
| CN111919290A (en) | 2020-11-10 |
| FR3079346A1 (en) | 2019-09-27 |
| US20210020826A1 (en) | 2021-01-21 |
| JP7256204B2 (en) | 2023-04-11 |
| EP3776641B1 (en) | 2024-05-15 |
| JP2021519536A (en) | 2021-08-10 |
| KR20200135411A (en) | 2020-12-02 |
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