JPWO2009081723A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JPWO2009081723A1 JPWO2009081723A1 JP2009547019A JP2009547019A JPWO2009081723A1 JP WO2009081723 A1 JPWO2009081723 A1 JP WO2009081723A1 JP 2009547019 A JP2009547019 A JP 2009547019A JP 2009547019 A JP2009547019 A JP 2009547019A JP WO2009081723 A1 JPWO2009081723 A1 JP WO2009081723A1
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- connection conductor
- semiconductor chip
- circuit pattern
- insulating resin
- semiconductor device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
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- 229910000679 solder Inorganic materials 0.000 abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 16
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 230000007547 defect Effects 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
(1)絶縁基板上に形成された回路パターンと、前記回路パターン上に固着された半導体チップと、前記回路パターンもしくは前記半導体チップの少なくとも一方に固着された接続導体と、前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを被覆した絶縁樹脂と、前記半導体チップの主電極に主電流を流し、前記接続導体の前記溶接部にレーザ溶接で接合された外部端子と、からなる構成とする。
(3)絶縁基板上に形成された回路パターンと、前記回路パターン上に固着された半導体チップと、前記回路パターンもしくは前記半導体チップの少なくとも一方に固着された接続導体と、前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを被覆した絶縁樹脂と、前記半導体チップの主電極に主電流を流す外部端子と、該外部端子と前記接続導体の前記溶接部とにそれぞれレーザ溶接で接合された外部接続導体と、からなる構成とする。
(5)前記半導体チップは、前記主電極の他に1または複数の信号電極を有し、前記絶縁樹脂は、少なくとも前記信号電極と外部に導出する信号端子とを接続するボンディングワイヤを被覆しているとよい。
(7)絶縁基板上に形成された回路パターンに半導体チップを固着する工程と、前記回路パターンもしくは前記半導体チップの少なくとも一方に接続導体を固着する工程と、前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを絶縁樹脂にて被覆する被覆工程と、前記被覆工程に続いて、前記半導体チップの主電極に主電流を流す外部端子を、前記接続導体の前記溶接部にレーザ溶接で接合する工程と、前記絶縁樹脂上に、前記接続導体の露出部と前記外部端子を被覆する上層絶縁樹脂を充填する充填工程と、を含む半導体装置の製造方法とする。
<実施例1>
図1は、この発明の第1実施例の半導体装置の要部断面図である。基本的な構造は、図9に示した従来の半導体装置と同じだが、異なるのは、回路パターン5と外部端子11との間および回路パターン6と外部端子11との間に接続導体14を挿入している点である。
次に、外部端子11がインサート成型された端子ケース10と銅ベース1とを図示しないシリコーン系接着剤にて加熱接着する。この後、接続導体14の上部面Pが露出しボンディングワイヤ9が埋没するように樹脂17aを充填する(図4(a)参照)。
図2に第1実施例の半導体装置の変形例を示す。ここで、図(a)および図(b)には工程順の要部断面が示されている。
主電流を流すボンディングワイヤ9は、信号電極に接続するボンディングワイヤ90より太く剛性も大きいため、信号電極に接続するボンディングワイヤ90に比べてスパッタ21の衝突の影響を受けにくい。また、近接するボンディングワイヤ9は複数本並列に接続されたものであるため、スパッタ21がボンディングワイヤ9に付着しても、短絡の影響も受けにくい。
接続導体14を絶縁回路基板の回路パターン5および回路パターン6にはんだ接合した後、外部端子11と接続導体14とをスポットレーザ溶接する。ここで用いる接続導体14の厚さは、外部端子11の厚さ以上とすることで、溶接部12が接続導体14の下に位置する絶縁回路基板の回路パターン5および回路パターン6や図示しない回路配線などの回路パターンに到達することなく、信頼性の高いレーザ溶接による安定した強固な接合が実現できる。
図3は第1実施例の半導体装置の別の変形例を示す。図3では、信号端子11’周辺の半導体装置の要部断面図が示されている。尚、図3において、銅ベース1は、表示されていない。
図4は、図1の半導体装置の製造方法を説明する工程であり、同図(a)、同図(b)は工程順に示した要部製造工程断面図である。工程の説明は前記の図1で行っている。
図6は、この発明の第2実施例の半導体装置の要部断面図である。図1の場合との差異は、外部端子11とスポットレーザ溶接を行う接続導体の形状がU字型の接続導体15としている点である。ここで、U字型と称したのは、「U」の文字を横に倒した形状であるためである。回路パターン5にはんだ接合する面と、溶接部12で溶接する面(P)とが回路パターン面より立ち上がる部分(連結部)によって空間を隔てて連結された形状である。接続導体15をU字形状とすることで、レーザ溶接の際、上側に位置する外部接続導体(リードフレーム)で下側に位置するU字型接続導体15の上部平板部(上部面P)を押さえ込むことにより上部平板部Pがたわんでレーザ溶接面において、接続導体15と外部端子11とがしっかりと密着して良好なレーザ溶接ができる。
図7は、この発明の第3実施例の半導体装置の構成図であり、同図(a)は要部断面図、同図(b)は同図(a)のY−Y線で切断した要部断面図である。図1および図6の場合との差異は、接続導体の形状をΩ型としたΩ型接続導体16とした点である。Ω型と称したのは形状がΩの文字に似ているためである。回路パターン5にはんだ接合する面と、溶接部12で溶接する面(P)とが、回路パターン面より立ち上がる部分(連結部)によって、空間を隔てて連結された形状である。Ω型接続導体16は外部端子11とレーザ溶接による溶接部12で固着される。このレーザ溶接する前に樹脂17aをΩ型接続導体16の上側の平坦部表面(上部面P)より下に位置するように充填する。これによってスパッタ21による損傷や不良を防止する。レーザ溶接後、樹脂17a上に樹脂17bを充填する。
図8は、この発明の第4実施例の半導体装置の要部構成図であり、同図(a)は要部断面図、同図(b)は同図(a)のY−Y線で切断した要部断面図、同図(c)は同図(a)のB部の構造が異なる要部断面図、同図(d)は同図(a)のC部の構造が異なる要部断面図である。この図は2個の半導体チップをΩ型接続導体20で接続し、そのΩ型接続導体20と外部接続導体19(リードフレーム)をレーザ溶接した場合の図である。同図(b)はΩ型接続導体20は2本の足元に2個の半導体チップ8(例えば、IGBTチップとダイオードチップなど)がそれぞれはんだ13で固着している状態を示している。同図(c)は端子ケースに外部端子が埋め込まれボンディングワイヤ9と接続する箇所が端子ケース10から露出している場合である。通常のケース構造は同図(c)のような構造をしている。
上記については単に本発明の原理を示すものである。さらに、多数の変形、変更が当業者にとって可能であり、本発明は上記に示し、説明した正確な構成および応用例に限定されるものではなく、対応するすべての変形例および均等物は、添付の請求項およびその均等物による本発明の範囲とみなされる。
2、7、13 はんだ
3 裏面銅箔
4 セラミックス(絶縁基板)
5、5’、6 回路パターン
8 半導体チップ
9 ボンディングワイヤ(アルミワイヤ)
10 端子ケース
11 外部端子
11’ 信号端子
12 溶接部
14 接続導体
15 U字型接続導体
17、17a、17b 樹脂
19 外部接続導体
20 Ω型接続導体
21 スパッタ
22 パッド
90、91 ボンディングワイヤ
P 上部面
Claims (11)
- 絶縁基板上に形成された回路パターンと、
前記回路パターン上に固着された半導体チップと、
前記回路パターンもしくは前記半導体チップの少なくとも一方に固着された接続導体と、
前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを被覆した絶縁樹脂と、
前記半導体チップの主電極に主電流を流し、前記接続導体の前記溶接部にレーザ溶接で接合された外部端子と、
からなることを特徴とする半導体装置。 - 前記絶縁樹脂上に、前記接続導体の露出部と前記外部端子を被覆する上層絶縁樹脂を備えたことを特徴とする請求の範囲第1項に記載の半導体装置。
- 絶縁基板上に形成された回路パターンと、
前記回路パターン上に固着された半導体チップと、
前記回路パターンもしくは前記半導体チップの少なくとも一方に固着された接続導体と、
前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを被覆した絶縁樹脂と、
前記半導体チップの主電極に主電流を流す外部端子と、
該外部端子と前記接続導体の前記溶接部とにそれぞれレーザ溶接で接合された外部接続導体と、
からなることを特徴とする半導体装置。 - 前記絶縁樹脂上に、前記接続導体の露出部と前記外部端子と前記外部接続導体とを被覆する上層絶縁樹脂を備えたことを特徴とする請求の範囲第3項に記載の半導体装置。
- 前記半導体チップは、前記主電極の他に1または複数の信号電極を有し、前記絶縁樹脂は、少なくとも前記信号電極と外部に導出する信号端子とを接続するボンディングワイヤを被覆していることを特徴とする請求の範囲第1項または第3項に記載の半導体装置。
- 前記接続導体は、前記固着した面と前記溶接部とを、空間を隔てて位置する屈曲構造であることを特徴とする請求の範囲第1項または第3項に記載の半導体装置。
- 絶縁基板上に形成された回路パターンに半導体チップを固着する工程と、
前記回路パターンもしくは前記半導体チップの少なくとも一方に接続導体を固着する工程と、
前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを絶縁樹脂にて被覆する被覆工程と、
前記被覆工程に続いて、前記半導体チップの主電極に主電流を流す外部端子を、前記接続導体の前記溶接部にレーザ溶接で接合する工程と、
前記絶縁樹脂上に、前記接続導体の露出部と前記外部端子を被覆する上層絶縁樹脂を充填する充填工程と、
を含むことを特徴とする半導体装置の製造方法。 - 絶縁基板上に形成された回路パターンに半導体チップを固着する工程と、
前記回路パターンもしくは前記半導体チップの少なくとも一方に接続導体を固着する工程と、
前記接続導体の溶接部を露出させ、前記回路パターン、前記半導体チップを絶縁樹脂にて被覆する被覆工程と、
前記被覆工程に続いて、前記半導体チップの主電極に主電流を流す外部端子と、前記接続導体の前記溶接部とにそれぞれ外部接続導体をレーザ溶接で接合する工程と、
前記絶縁樹脂上に、前記接続導体の露出部と前記外部端子と前記外部接続導体とを被覆する上層絶縁樹脂を充填する充填工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記絶縁樹脂は、硬化性樹脂であって、前記被覆工程は、前記硬化性樹脂を硬化させる工程を含み、前記充填工程の前に、前記絶縁樹脂の表面の異物を除去する除去工程を有することを特徴とする請求の範囲第7項または第8項に記載の半導体装置の製造方法。
- 前記絶縁樹脂および上層絶縁樹脂は、硬化性樹脂であって、前記充填工程に続いて、前記絶縁樹脂および前記上層絶縁樹脂を同時に硬化する硬化工程を有することを特徴とする請求の範囲第7項または第8項に記載の半導体装置の製造方法。
- 前記半導体チップの信号電極に導通する信号端子の少なくとも一部もしくは前記信号端子に導通するボンディングワイヤを、前記絶縁樹脂により被覆することを特徴とする請求の範囲第7項または第8項に記載の半導体装置の製造方法。
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