JP2816239B2 - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

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Publication number
JP2816239B2
JP2816239B2 JP2155167A JP15516790A JP2816239B2 JP 2816239 B2 JP2816239 B2 JP 2816239B2 JP 2155167 A JP2155167 A JP 2155167A JP 15516790 A JP15516790 A JP 15516790A JP 2816239 B2 JP2816239 B2 JP 2816239B2
Authority
JP
Japan
Prior art keywords
resin
package
wiring pattern
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2155167A
Other languages
English (en)
Other versions
JPH0448767A (ja
Inventor
誠 北野
朝雄 西村
昭弘 矢口
竜治 河野
奈柄 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2155167A priority Critical patent/JP2816239B2/ja
Priority to KR1019910008853A priority patent/KR950005446B1/ko
Priority to US07/713,100 priority patent/US5539250A/en
Priority to DE69127587T priority patent/DE69127587T2/de
Priority to EP91109654A priority patent/EP0461639B1/en
Publication of JPH0448767A publication Critical patent/JPH0448767A/ja
Application granted granted Critical
Publication of JP2816239B2 publication Critical patent/JP2816239B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高集積化に適した樹脂封止型半導体装置の
パッケージ構造に関する。
〔従来の技術〕
一つの半導体パツケージに二枚以上の半導体素子を搭
載することは、半導体装置の高集積化する上で非常に有
効である。さらに、半導体素子の歩留が低い場合は、良
品の素子を組合わせて用いることにより、同じ面積の一
枚の素子を用いる場合に比べて、半導体装置全体の歩留
りが格段に向上する効果もある。
一つの半導体パツケージに二枚の半導体素子を搭載す
る方法は、タブと呼ばれるリードフレームの一部の金属
板の両側に素子を接着し、それぞれの素子の電極とリー
ドをワイヤで接続する構造が特開昭62−131555号あるい
は同62−8529号公報に開示されている。また、特開昭62
−119952号公報に記載のように、パツケージ内部でリー
ドフレームどおしを接合する方法、特開昭63−124450号
公報に記載のように、二段のリードフレームを樹脂封止
する方法が公知である。さらに一つのパツケージとは言
い難いが、二つのパツケージをコンパクトに接合し、実
質的に一つのパツケージとする方法が特開昭62−16552
号公報に開示されている。
〔発明が解決しようとする課題〕
上記従来技術は、それぞれ以下に示すような欠点があ
るため、実用化には至つていない。
タブの両側に素子を搭載する構造では、片面の素子電
極とリードフレームのワイヤ接続を終えた後、反対面の
ワイヤ接続を行う必要があるが、最初に接続したワイヤ
にダメージを与えないで反対面のワイヤ接続を行うこと
が非常に困難である。
パツケージ内部でリードフレーム同士を接合する方法
は、パツケージが大きくなるという欠点がある。
二段のリードフレームを樹脂封止することは、非常に
困難であり、通常用いられているトランスフアモールド
で量産的にこれを達成する技術は開発されていない。
二つのパツケージを接合する方法は、容易に達成でき
るが、パツケージが厚くなるため、高積層化という点か
らは、あまり意味がない。
以上の従来技術は、素子側面の近傍に配置されたリー
ドと素子電極をワイヤにより接続するため、素子上の電
極の位置が素子の周辺付近に限定される。このため、第
16図に示すように、リードが素子上面まで延長されたパ
ツケージ（以下、リードオンチツプ構造、略してLOC構
造と呼ぶ）で用いる素子、すなわち、電極が素子の中央
付近に設けられた素子二枚を一つのパツケージに搭載す
る場合には用いることができない。
さらに、素子側面近傍のリードと素子電極をワイヤに
より接続するため、素子側面とパツケージ側面の間にあ
る程度の寸法が必要であり、大きな素子を搭載すること
ができなかつた。また、これらの公知例では、パツケー
ジを薄くする場合の考慮がされていなかつた。
本発明の目的は、電極が中央付近に設けられた大形の
素子二枚を薄形のパツケージに搭載するのに適し、さら
に量産性の良好なパツケージ構造を提供することにあ
る。
〔課題を解決するための手段〕
本発明は、上記目的を達成するため、パツケージを以
下のように構成した。
まず、金属の配線パターンを設けた絶縁フイルムを素
子の回路形成面に接着する。
次に、配線パターンと素子の電極をワイヤ等により電
気的に接続する。
次に、このように構成された素子を二枚用意し、配線
パターンが設けられた面を対向させ、リードフレームを
挾む。
次に、配線パターンとリードフレームをはんだ等で電
気的に接続する。
最後に、リードフレームの一部と半導体素子を樹脂封
止し、リードフレームのアウタリードを成形する。
〔作用〕
本発明のパツケージでは、形状が任意に設計できる配
線パターンを用いるので、素子の電極とリードフレーム
を任意の位置で電気的に接続できる。例えば、LOCパツ
ケージ用の素子のように、素子の中心線付近に電極が配
置された素子を用いても、二枚の素子を一つのパツケー
ジに搭載することができる。
また、素子の側面とパツケージの側面との間に、電気
的接続部分がないので、素子をパツケージ外形近傍まで
大きくすることができ、高集積化が達成される。
従来のパツケージに対する本発明のパツケージの厚さ
の増加は、基本的には素子一枚の厚さに留まるので、二
枚の素子を搭載するパツケージとしては、薄形化に好適
である。
さらに、本発明によるパツケージは、LOCパツケージ
の製造技術、テープオートメイテツドボンデイング技術
など、従来技術をそのまま適用できるため、量産性が良
好である。
〔実施例〕
以下、本発明の実施例を図を用いて説明する。
本発明の第一の実施例による半導体装置の断面図を第
１図に示す。また、第１図の中央部分の拡大図を第２
図、端部付近の拡大図を第３図に示す。本実施例では、
一つのパツケージに二枚の半導体素子1a,1bが対向して
搭載されている。素子1a,1bの回路形成面に、接着層8b
（第１図では省略）により絶縁フィルム３が接合され、
接着層8a（第１図では省略）により配線パターン４が絶
縁フィルム３に接合されている。素子1a,1bの中央部に
設けられた電極７（第１図では省略）と配線パターン４
がワイヤ５により電気的に接続されている。パツケージ
の端部では、配線パターン４とリードフレーム２が導電
接着層９（第１図では省略）を介して電気的に接続され
ている。これらの部材は、封止樹脂６により封止されて
いる。
第４図に本実施例による半導体装置の製造方法を示
す。まず、搭載する二枚の半導体素子1a,1bを用意し（4
01）、素子の回路形成面に絶縁フイルム３を接着する
（402）。フイルムの材質は、例えば、ポリイミドが好
適であり、接着剤は、例えば、エポキシ系樹脂を用い
る。次に、既にパターン成形された配線パターン４を絶
縁フイルム３に接着する（403）。本実施例の場合、配
線パターン４の厚さは、リードフレームと同等である。
次に、素子の電極（図では省略）と配線パターン４をワ
イヤ５により電気的に接続する（404）。この後、配線
パターン４の素子からはみ出た部分を切断する（40
5）。なお、（406）の工程と（405）の工程は順序を入
れ換えて行つても良い。このように構成した二組の部材
を対向させてリードフレーム２を挾み、配線パターン４
とリードフレーム２を導電接着層により電気的に接続す
る（406）。この接着の方法には、例えば、はんだを用
いる。このような半導体装置では、リードをプリント基
板に実装するのにはんだが用いられ、パツケージが250
℃程度に加熱される場合がある。従つて、配線パターン
４とリードフレーム２の接着に用いるはんだは、融点が
250℃以上であることが望ましい。また、この部分の接
着には、銀ペーストなどの導電性樹脂を用いても良い。
最後にこれらの部材を樹脂６で封止し（407）、リード
フレーム２を成形すると、第１図に示した半導体装置が
得られる。
このように、本実施例による半導体装置は、従来の技
術を用いて中央部に電極が設けられた半導体素子二枚を
一つのパツケージに搭載することができる。また、素子
の側面とパツケージの側面との間に、電気的接続部分を
設ける必要がないので、この部分の寸法（第３図に示し
たフレ寸法）を樹脂が破壊しない程度の寸法（通常0.8m
m程度）にまで短くすることができ、従つて、大形の素
子の搭載が可能になる。
第１図の実施例では、配線パターン４の端部と素子側
面がそろつているが、配線パターン４の切断の都合で、
第５図に示すように、素子側面からはみ出していても良
いし、逆に、第６図に示すように、内側で切断されてい
ても良い。
また、第１図の実施例では、素子1a,1bの電極７は素
子中央部に設けられているが、電極の位置は第７図に示
すように片寄つていても良いし、また、第８図に示すよ
うに素子周辺に設けられていても良い。
絶縁フレーム３は、第９図に示すように分割されてい
ても良い。さらに、配線パターン間の距離が短く、ワイ
ヤどおしが接触する恐れがある場合は、第10図に示すよ
うに、ワイヤ5a,5bを交互に配置すれば良い。
本発明の第二の実施例による半導体装置の断面の電極
付近の拡大図を第11図に示す。本実施例では、第一の実
施例の構成に加え、電極７とワイヤ５の一部が第一の樹
脂10a,10bで覆われている。この第一の樹脂10a,10bは、
第４図の工程（404）もしくは（405）において設けられ
る。このように電極７を樹脂で覆うことにより、配線パ
ターンとリードフレームをはんだ接合する際に用いるフ
ラツクスによつて電極７が腐食されるのを防ぐことがで
きる。
この第一の樹脂10a,10bは、電極のみではなく、第12
図に示すように、ワイヤ５全体を覆つても良い。
第一の樹脂10a,10bの材質は、全体の封止に用いる第
二の樹脂６と同質のものでも良いし、またはシリコンゲ
ルのように軟らかい樹脂であつても良い。しかし、素子
1a,1bの回路形成面と密着性の良い材料を用いなければ
意味がない。
本発明の第三の実施例による半導体装置の断面の一部
分を第13図に示す。本実施例では、接着層8c,8dが絶縁
フイルムの機能を兼ねている。このようにパツケージを
構成することにより、フイルム厚さの二倍だけパツケー
ジを薄くすることができる。本実施例は、特に、素子の
表面にポリイミド等の保護膜が形成されている場合に、
素子上の回路と配線パターンの電気的絶縁が確実にとれ
るので有効である。
本発明の第四の実施例による半導体装置の断面の一部
分を第14図に示す。本実施例では、配線パターンとし
て、金属箔11が用いられているので、パツケージを薄く
することができる。絶縁フイルム３にパターン形成され
た金属箔を接着するのは困難であるので、既にテープオ
ートメイテツドボンデイング技術で用いられているよう
に、フイルムに金属箔を接着した後、エツチングにより
パターン形成を行う方法が有効である。本実施例では、
このようにパターン形成されたフイルムを素子1a,1bに
接着した後、第４図の（404）工程以降の工程を経て製
造することができる。金属箔の材質としては、例えば、
銅が挙げられる。
本発明の第五の実施例による半導体装置の断面の一部
分を第15図に示す。本実施例では、配線パターンとして
金属箔12を用い、金属箔12が素子電極７の近傍で絶縁フ
イルム３からはみ出ており、金属箔12のはみ出た部分13
が、はんだ，金シリコン共晶合金等を介し、電極７に熱
圧着されて、電気的に接続されている。このようにパツ
ケージを構成することで、ワイヤが不要になり、ワイヤ
高さを確保する必要がなくなり、従つて、第四の実施例
に比べても、さらに、パツケージの薄形化を達成するこ
とができる。現状のパツケージ組立技術を用いた場合の
本実施例のパツケージ厚さを試算すると、1.1mmまで薄
くすることが可能である。なお、金属箔13と電極７の接
合は、テープオートメイテツドボンデイングの技術を用
いれば、容易に行うことができる。
〔発明の効果〕
本発明は、以下説明したように構成されているので、
以下に記載されるような効果を奏する。
素子の上に配線パターンが設けられているので、電極
が中央部にある素子二枚を一つのパツケージに搭載する
ことができる。
また、素子の側面とパツケージの側面との間に電気的
接続部分を設ける必要がないので、大形の素子を搭載す
ることができる。
また、本発明による半導体装置は、1.1mmまで薄くす
ることができる。
【図面の簡単な説明】
第１図は本発明の第一の実施例による半導体装置の断面
図、第２図は第一の実施例の電極付近の拡大断面図、第
３図は第一の実施例のパツケージ側面付近の拡大断面
図、第４図は第一の実施例の製造方法を示す説明図、第
５図から第10図までは第一の実施例を部分的に変更した
半導体装置の断面図、第11図は第二の実施例による半導
体装置の部分拡大断面図、第12図は第二の実施例を部分
的に変更した半導体装置の部分拡大断面図、第13図は第
三の実施例の部分拡大断面図、第14図は第四の実施例の
部分拡大断面図、第15図は第五の実施例の部分拡大断面
図、第16図は従来のリードオンチツプ構造の内部を示す
斜視図である。 １……半導体素子、２……リードフレーム、３……絶縁
フイルム、４……配線パターン、５……ワイヤ、６……
封止樹脂、７……電極、８……接着層、９……導電性接
着層、10……樹脂、11……金属箔配線パターン、12……
金属箔配線パターンの電極接合部。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 河野 竜治 茨城県土浦市神立町502番地 株式会社 日立製作所機械研究所内 (72)発明者 米田 奈柄 茨城県土浦市神立町502番地 株式会社 日立製作所機械研究所内 (56)参考文献 特開 昭54−87173（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 25/065

Claims (3)

    (57)【特許請求の範囲】
  1. 【請求項１】複数の電極が形成された面に絶縁フィルム
    を備えた２つの半導体素子と、 これらの半導体素子に電気的に接続されるリードと、 前記２つの半導体素子を封止する樹脂とを備え、 前記２つの半導体素子は前記リードを介して各々の前記
    絶縁フィルムを備えた面が対向するように配置されてお
    り、 前記複数の電極と前記配線パターンと前記リードとが電
    気的に接続された樹脂封止型半導体装置。
  2. 【請求項２】複数の電極が形成された面に絶縁フィルム
    を備えた２つの半導体素子と、 これらの半導体素子に電気的に接続されるリードと、 前記２つの半導体素子を封止する樹脂とを備え、 前記絶縁フィルムの前記半導体素子と対向する面とは反
    対の面に配線パターンが形成されており、 前記２つの半導体素子は前記リードを介して各々の前記
    絶縁フィルムを備えた面が対向するように配置されてお
    り、 前記複数の電極と前記配線パターンとを電気的に接続す
    る手段と、 前記配線パターンと前記リードとを電気的に接続する手
    段とを備えた樹脂封止型半導体装置。
  3. 【請求項３】複数の電極が形成された面に絶縁フィルム
    を備えた２つの半導体素子と、 これらの半導体素子に電気的に接続されるリードと、 前記２つの半導体素子を封止する樹脂とを備え、 前記絶縁フィルムの前記半導体素子と対向する面とは反
    対の面に配線パターンが形成されており、 前記２つの半導体素子は前記リードを介して各々の前記
    絶縁フィルムを備えた面が対向するように配置されてお
    り、 前記配線パターンと前記リードおよび前記複数の電極と
    前記配線パーターンとはそれぞれ電気的に接続されてお
    り、 前記配線パターンの前記複数の電極と電気的に接続され
    た領域は前記絶縁フルムよりも突出している樹脂封止型
    半導体装置。
JP2155167A 1990-06-15 1990-06-15 樹脂封止型半導体装置 Expired - Fee Related JP2816239B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2155167A JP2816239B2 (ja) 1990-06-15 1990-06-15 樹脂封止型半導体装置
KR1019910008853A KR950005446B1 (ko) 1990-06-15 1991-05-30 수지봉지형 반도체장치
US07/713,100 US5539250A (en) 1990-06-15 1991-06-11 Plastic-molded-type semiconductor device
DE69127587T DE69127587T2 (de) 1990-06-15 1991-06-12 In Kunststoff eingeformte Halbleiteranordnung
EP91109654A EP0461639B1 (en) 1990-06-15 1991-06-12 Plastic-molded-type semiconductor device

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Application Number Priority Date Filing Date Title
JP2155167A JP2816239B2 (ja) 1990-06-15 1990-06-15 樹脂封止型半導体装置

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JPH0448767A JPH0448767A (ja) 1992-02-18
JP2816239B2 true JP2816239B2 (ja) 1998-10-27

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EP (1) EP0461639B1 (ja)
JP (1) JP2816239B2 (ja)
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DE (1) DE69127587T2 (ja)

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EP0461639A2 (en) 1991-12-18
EP0461639A3 (en) 1993-09-22
KR920001690A (ko) 1992-01-30
DE69127587D1 (de) 1997-10-16
US5539250A (en) 1996-07-23
JPH0448767A (ja) 1992-02-18
EP0461639B1 (en) 1997-09-10
DE69127587T2 (de) 1998-04-23
KR950005446B1 (ko) 1995-05-24

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