JPS60262430A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60262430A
JPS60262430A JP11842384A JP11842384A JPS60262430A JP S60262430 A JPS60262430 A JP S60262430A JP 11842384 A JP11842384 A JP 11842384A JP 11842384 A JP11842384 A JP 11842384A JP S60262430 A JPS60262430 A JP S60262430A
Authority
JP
Japan
Prior art keywords
semiconductor element
wiring pattern
resin
metal
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11842384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027180B2 (enrdf_load_stackoverflow
Inventor
Kenzo Hatada
畑田　賢造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11842384A priority Critical patent/JPS60262430A/ja
Publication of JPS60262430A publication Critical patent/JPS60262430A/ja
Publication of JPH027180B2 publication Critical patent/JPH027180B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/81447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP11842384A 1984-06-08 1984-06-08 半導体装置の製造方法 Granted JPS60262430A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11842384A JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11842384A JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60262430A true JPS60262430A (ja) 1985-12-25
JPH027180B2 JPH027180B2 (enrdf_load_stackoverflow) 1990-02-15

Family

ID=14736271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11842384A Granted JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60262430A (enrdf_load_stackoverflow)

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194732A (ja) * 1985-02-22 1986-08-29 Casio Comput Co Ltd 半導体ペレツトと基板の接合方法
JPS62169433A (ja) * 1986-01-22 1987-07-25 Fuji Xerox Co Ltd 半導体装置の製造方法
JPS6313337A (ja) * 1986-07-04 1988-01-20 Fuji Electric Co Ltd 半導体素子の実装方法
JPS6329973A (ja) * 1986-07-23 1988-02-08 Nec Corp 電子写真複写装置
JPS6343337A (ja) * 1986-08-09 1988-02-24 Toshiba Corp 半導体装置
JPS63127541A (ja) * 1986-11-17 1988-05-31 Matsushita Electric Ind Co Ltd チップの接合方法
JPS63150930A (ja) * 1986-12-15 1988-06-23 Shin Etsu Polymer Co Ltd 半導体装置
JPS63151031A (ja) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd 半導体装置の接続方法
JPS63237427A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体素子の実装方法
JPS63293840A (ja) * 1987-05-26 1988-11-30 Matsushita Electric Ind Co Ltd 実装体
JPS642331A (en) * 1987-06-25 1989-01-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH01226161A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 半導体チップの接続方法
JPH0273690A (ja) * 1988-09-09 1990-03-13 Mitsui Mining & Smelting Co Ltd 実装基板の製造方法
JPH02110950A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JPH02110951A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および装置
JPH02110948A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置及びその実装方法
JPH02114933U (enrdf_load_stackoverflow) * 1989-02-28 1990-09-14
JPH02263476A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体実装方法
JPH02263481A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体装置およびそれを用いたイメージセンサ
JPH03173436A (ja) * 1989-12-01 1991-07-26 Matsushita Electric Ind Co Ltd 半導体装置
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
DE19529490A1 (de) * 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
JPH09306951A (ja) * 1996-11-18 1997-11-28 Fuji Xerox Co Ltd 半導体装置の製造方法
WO1998030073A1 (en) * 1996-12-27 1998-07-09 Matsushita Electric Industrial Co., Ltd. Method and device for mounting electronic component on circuit board
US5883432A (en) * 1995-11-30 1999-03-16 Ricoh Company, Ltd. Connection structure between electrode pad on semiconductor device and printed pattern on printed circuit board
DE10120029A1 (de) * 2001-02-13 2002-08-29 Pac Tech Gmbh Presskontaktierung von Mikrochips
US6674178B1 (en) 1999-09-20 2004-01-06 Nec Electronics Corporation Semiconductor device having dispersed filler between electrodes
US6864119B2 (en) 2002-10-04 2005-03-08 Sharp Kabushiki Kaisha COF semiconductor device and a manufacturing method for the same
CN1329981C (zh) * 2003-06-30 2007-08-01 夏普株式会社 半导体载体用膜、及使用其的半导体装置和液晶模块
WO2007134581A1 (de) * 2006-05-19 2007-11-29 Osram Opto Semiconductors Gmbh Elektrisch leitende verbindung mit isolierendem verbindungsmedium
US7304394B2 (en) 2004-04-08 2007-12-04 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US7553890B2 (en) 1997-03-31 2009-06-30 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7629056B2 (en) 1997-03-31 2009-12-08 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7687319B2 (en) 2005-10-06 2010-03-30 Fujitsu Microelectronics Limited Semiconductor device and manufacturing method thereof
US7750457B2 (en) 2004-03-30 2010-07-06 Sharp Kabushiki Kaisha Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
US7755203B2 (en) 2006-08-18 2010-07-13 Fujitsu Semiconductor Limited Circuit substrate and semiconductor device
US8148204B2 (en) 2005-08-22 2012-04-03 Hitachi Chemical Dupont Microsystems, Ltd. Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
JP2013065705A (ja) * 2011-09-16 2013-04-11 Panasonic Corp 電子部品の実装方法及び実装システム
US8613623B2 (en) 2008-09-30 2013-12-24 Sony Chemical & Information Device Corporation Acrylic insulating adhesive
US8975192B2 (en) 2005-08-22 2015-03-10 Hitachi Chemical Dupont Microsystems Ltd. Method for manufacturing semiconductor device
US9306132B2 (en) 2013-03-28 2016-04-05 Toshiba Hokuto Electronics Corporation Light emitting device and method for manufacturing the same
US9837587B2 (en) 2013-03-28 2017-12-05 Toshiba Hokuto Electronics Corporation Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device
US9905545B2 (en) 2014-03-25 2018-02-27 Toshiba Hokuto Electronics Corporation Light emitting device
US10096581B2 (en) 2014-09-26 2018-10-09 Toshiba Hokuto Electronics Corporation Light emitting module
US10461063B2 (en) 2013-12-02 2019-10-29 Toshiba Hokuto Electronics Corporation Light-emitting device
US10483443B2 (en) 2013-12-02 2019-11-19 Toshiba Hokuto Electronics Corporation Light emitting device and manufacturing method thereof
US10553769B2 (en) 2013-12-02 2020-02-04 Toshiba Hokuto Electronics Corporation Light-emitting unit and manufacturing method of light-emitting unit
US10580949B2 (en) 2014-09-26 2020-03-03 Toshiba Hokuto Electronics Corporation Light emitting module
DE102017108256B4 (de) 2016-04-21 2024-01-18 San-Ei Kagaku Co., Ltd. Wärmehärtbare harzzusammensetzung

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Publication number Priority date Publication date Assignee Title
US5677246A (en) 1994-11-29 1997-10-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices

Citations (11)

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Publication number Priority date Publication date Assignee Title
JPS51100679A (enrdf_load_stackoverflow) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51119732A (en) * 1975-04-15 1976-10-20 Seiko Epson Corp Adhesive with anisotropy in the direction of conducting path
JPS5357481A (en) * 1976-11-04 1978-05-24 Canon Inc Connecting process
JPS56103876A (en) * 1980-01-22 1981-08-19 Fujikura Kasei Kk Method of connecting transparent conductor
JPS56122193A (en) * 1980-01-31 1981-09-25 Rogers Corp Electrically connected unit and method therefor
JPS56167340A (en) * 1980-05-27 1981-12-23 Toshiba Corp Junction of semicondctor pellet with substrate
JPS57130437A (en) * 1981-02-06 1982-08-12 Citizen Watch Co Ltd Sealing method of ic
JPS5873126A (ja) * 1981-10-27 1983-05-02 Seiko Keiyo Kogyo Kk 半導体装置の実装方法
JPS58103143A (ja) * 1981-12-16 1983-06-20 Sharp Corp 電子部品の封止方法
JPS58107641A (ja) * 1981-12-21 1983-06-27 Seiko Keiyo Kogyo Kk 半導体装置の封止方法
JPS59178758A (ja) * 1983-03-29 1984-10-11 Sharp Corp 半導体チツプの基板実装方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100679A (enrdf_load_stackoverflow) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51119732A (en) * 1975-04-15 1976-10-20 Seiko Epson Corp Adhesive with anisotropy in the direction of conducting path
JPS5357481A (en) * 1976-11-04 1978-05-24 Canon Inc Connecting process
JPS56103876A (en) * 1980-01-22 1981-08-19 Fujikura Kasei Kk Method of connecting transparent conductor
JPS56122193A (en) * 1980-01-31 1981-09-25 Rogers Corp Electrically connected unit and method therefor
JPS56167340A (en) * 1980-05-27 1981-12-23 Toshiba Corp Junction of semicondctor pellet with substrate
JPS57130437A (en) * 1981-02-06 1982-08-12 Citizen Watch Co Ltd Sealing method of ic
JPS5873126A (ja) * 1981-10-27 1983-05-02 Seiko Keiyo Kogyo Kk 半導体装置の実装方法
JPS58103143A (ja) * 1981-12-16 1983-06-20 Sharp Corp 電子部品の封止方法
JPS58107641A (ja) * 1981-12-21 1983-06-27 Seiko Keiyo Kogyo Kk 半導体装置の封止方法
JPS59178758A (ja) * 1983-03-29 1984-10-11 Sharp Corp 半導体チツプの基板実装方法

Cited By (67)

* Cited by examiner, † Cited by third party
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JPS6313337A (ja) * 1986-07-04 1988-01-20 Fuji Electric Co Ltd 半導体素子の実装方法
JPS6329973A (ja) * 1986-07-23 1988-02-08 Nec Corp 電子写真複写装置
JPS6343337A (ja) * 1986-08-09 1988-02-24 Toshiba Corp 半導体装置
JPS63127541A (ja) * 1986-11-17 1988-05-31 Matsushita Electric Ind Co Ltd チップの接合方法
JPS63150930A (ja) * 1986-12-15 1988-06-23 Shin Etsu Polymer Co Ltd 半導体装置
JPS63151031A (ja) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd 半導体装置の接続方法
JPS63237427A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体素子の実装方法
JPS63293840A (ja) * 1987-05-26 1988-11-30 Matsushita Electric Ind Co Ltd 実装体
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JPH01226161A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 半導体チップの接続方法
JPH0273690A (ja) * 1988-09-09 1990-03-13 Mitsui Mining & Smelting Co Ltd 実装基板の製造方法
JPH02110951A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および装置
JPH02110948A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置及びその実装方法
JPH02110950A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JPH02114933U (enrdf_load_stackoverflow) * 1989-02-28 1990-09-14
JPH02263476A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体実装方法
JPH02263481A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体装置およびそれを用いたイメージセンサ
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JPH03173436A (ja) * 1989-12-01 1991-07-26 Matsushita Electric Ind Co Ltd 半導体装置
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JPH09306951A (ja) * 1996-11-18 1997-11-28 Fuji Xerox Co Ltd 半導体装置の製造方法
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US7629056B2 (en) 1997-03-31 2009-12-08 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US8142605B2 (en) 1997-03-31 2012-03-27 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
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DE10120029A1 (de) * 2001-02-13 2002-08-29 Pac Tech Gmbh Presskontaktierung von Mikrochips
US6864119B2 (en) 2002-10-04 2005-03-08 Sharp Kabushiki Kaisha COF semiconductor device and a manufacturing method for the same
CN1329981C (zh) * 2003-06-30 2007-08-01 夏普株式会社 半导体载体用膜、及使用其的半导体装置和液晶模块
US7750457B2 (en) 2004-03-30 2010-07-06 Sharp Kabushiki Kaisha Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
US7304394B2 (en) 2004-04-08 2007-12-04 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US8975192B2 (en) 2005-08-22 2015-03-10 Hitachi Chemical Dupont Microsystems Ltd. Method for manufacturing semiconductor device
US8148204B2 (en) 2005-08-22 2012-04-03 Hitachi Chemical Dupont Microsystems, Ltd. Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
US7687319B2 (en) 2005-10-06 2010-03-30 Fujitsu Microelectronics Limited Semiconductor device and manufacturing method thereof
US8102060B2 (en) 2006-05-19 2012-01-24 Osram Opto Semiconductors Gmbh Electrically conducting connection with insulating connection medium
WO2007134581A1 (de) * 2006-05-19 2007-11-29 Osram Opto Semiconductors Gmbh Elektrisch leitende verbindung mit isolierendem verbindungsmedium
JP2009537970A (ja) * 2006-05-19 2009-10-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 絶縁性接続媒体を用いた電気伝導性接続部
KR101367545B1 (ko) * 2006-05-19 2014-02-26 오스람 옵토 세미컨덕터스 게엠베하 절연성 결합 매체를 이용하는 전기 전도적 결합
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