JPS583260A - 竪型埋め込みキヤパシタ - Google Patents

竪型埋め込みキヤパシタ

Info

Publication number
JPS583260A
JPS583260A JP56101112A JP10111281A JPS583260A JP S583260 A JPS583260 A JP S583260A JP 56101112 A JP56101112 A JP 56101112A JP 10111281 A JP10111281 A JP 10111281A JP S583260 A JPS583260 A JP S583260A
Authority
JP
Japan
Prior art keywords
layer
capacitor
semiconductor
dielectric
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56101112A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0145232B2 (enrdf_load_stackoverflow
Inventor
Yuji Furumura
雄二 古村
Mikio Takagi
幹夫 高木
Mamoru Maeda
守 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56101112A priority Critical patent/JPS583260A/ja
Publication of JPS583260A publication Critical patent/JPS583260A/ja
Publication of JPH0145232B2 publication Critical patent/JPH0145232B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56101112A 1981-06-29 1981-06-29 竪型埋め込みキヤパシタ Granted JPS583260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56101112A JPS583260A (ja) 1981-06-29 1981-06-29 竪型埋め込みキヤパシタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101112A JPS583260A (ja) 1981-06-29 1981-06-29 竪型埋め込みキヤパシタ

Publications (2)

Publication Number Publication Date
JPS583260A true JPS583260A (ja) 1983-01-10
JPH0145232B2 JPH0145232B2 (enrdf_load_stackoverflow) 1989-10-03

Family

ID=14291985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101112A Granted JPS583260A (ja) 1981-06-29 1981-06-29 竪型埋め込みキヤパシタ

Country Status (1)

Country Link
JP (1) JPS583260A (enrdf_load_stackoverflow)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213460A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体集積回路装置
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
FR2544537A1 (fr) * 1983-04-15 1984-10-19 Hitachi Ltd Dispositif de memoire a semi-conducteurs du type memoire dynamique a acces direct ou aleatoire (dram) a haute densite d'integration et procede de fabrication d'un tel dispositif
JPS59191374A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体集積回路装置
JPS6065559A (ja) * 1983-09-21 1985-04-15 Hitachi Ltd 半導体メモリ
FR2554954A1 (fr) * 1983-11-11 1985-05-17 Hitachi Ltd Dispositif de memoire a semi-conducteurs
JPS6092658A (ja) * 1983-10-27 1985-05-24 Matsushita Electronics Corp 半導体記憶装置
JPS60113460A (ja) * 1983-11-25 1985-06-19 Oki Electric Ind Co Ltd ダイナミックメモリ素子の製造方法
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
JPS60198771A (ja) * 1984-03-23 1985-10-08 Hitachi Ltd 半導体装置
JPS60200565A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 半導体装置の製造方法
JPS6136965A (ja) * 1984-07-30 1986-02-21 Toshiba Corp 半導体メモリ装置
JPS6167955A (ja) * 1984-09-11 1986-04-08 Fujitsu Ltd 半導体記憶装置とその製造方法
JPS6190395A (ja) * 1984-10-09 1986-05-08 Fujitsu Ltd 半導体記憶装置
JPS61160969A (ja) * 1984-12-07 1986-07-21 テキサス　インスツルメンツ　インコ−ポレイテツド メモリ・セルとその製法
JPS61207055A (ja) * 1985-03-11 1986-09-13 Nec Corp 半導体記憶装置
JPS627154A (ja) * 1985-07-02 1987-01-14 Mitsubishi Electric Corp 半導体装置
JPS6237366U (enrdf_load_stackoverflow) * 1985-08-14 1987-03-05
US4717942A (en) * 1983-07-29 1988-01-05 Nec Corporation Dynamic ram with capacitor groove surrounding switching transistor
US4792834A (en) * 1984-01-20 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor memory device with buried layer under groove capacitor
US4999689A (en) * 1987-11-06 1991-03-12 Sharp Kabushiki Kaisha Semiconductor memory
US5012308A (en) * 1984-08-27 1991-04-30 Kabushiki Kaisha Toshiba Semiconductor memory device
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
CN107437538A (zh) * 2016-05-26 2017-12-05 台湾积体电路制造股份有限公司 集成电路、垂直金属‑绝缘体‑金属电容器及其制造方法

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213460A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体集積回路装置
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
JPS5982761A (ja) * 1982-11-04 1984-05-12 Hitachi Ltd 半導体メモリ
FR2544537A1 (fr) * 1983-04-15 1984-10-19 Hitachi Ltd Dispositif de memoire a semi-conducteurs du type memoire dynamique a acces direct ou aleatoire (dram) a haute densite d'integration et procede de fabrication d'un tel dispositif
JPS59191373A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体集積回路装置
JPS59191374A (ja) * 1983-04-15 1984-10-30 Hitachi Ltd 半導体集積回路装置
US5021842A (en) * 1983-04-15 1991-06-04 Hitachi, Ltd. Trench DRAM cell with different insulator thicknesses
US4717942A (en) * 1983-07-29 1988-01-05 Nec Corporation Dynamic ram with capacitor groove surrounding switching transistor
JPS6065559A (ja) * 1983-09-21 1985-04-15 Hitachi Ltd 半導体メモリ
JPS6092658A (ja) * 1983-10-27 1985-05-24 Matsushita Electronics Corp 半導体記憶装置
FR2554954A1 (fr) * 1983-11-11 1985-05-17 Hitachi Ltd Dispositif de memoire a semi-conducteurs
JPS60113460A (ja) * 1983-11-25 1985-06-19 Oki Electric Ind Co Ltd ダイナミックメモリ素子の製造方法
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
US4646118A (en) * 1983-12-13 1987-02-24 Fujitsu Limited Semiconductor memory device
US4792834A (en) * 1984-01-20 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor memory device with buried layer under groove capacitor
JPS60198771A (ja) * 1984-03-23 1985-10-08 Hitachi Ltd 半導体装置
JPS60200565A (ja) * 1984-03-26 1985-10-11 Hitachi Ltd 半導体装置の製造方法
JPS6136965A (ja) * 1984-07-30 1986-02-21 Toshiba Corp 半導体メモリ装置
US5012308A (en) * 1984-08-27 1991-04-30 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6167955A (ja) * 1984-09-11 1986-04-08 Fujitsu Ltd 半導体記憶装置とその製造方法
JPS6190395A (ja) * 1984-10-09 1986-05-08 Fujitsu Ltd 半導体記憶装置
JPS61160969A (ja) * 1984-12-07 1986-07-21 テキサス　インスツルメンツ　インコ−ポレイテツド メモリ・セルとその製法
JPS61207055A (ja) * 1985-03-11 1986-09-13 Nec Corp 半導体記憶装置
JPS627154A (ja) * 1985-07-02 1987-01-14 Mitsubishi Electric Corp 半導体装置
JPS6237366U (enrdf_load_stackoverflow) * 1985-08-14 1987-03-05
US4999689A (en) * 1987-11-06 1991-03-12 Sharp Kabushiki Kaisha Semiconductor memory
CN107437538A (zh) * 2016-05-26 2017-12-05 台湾积体电路制造股份有限公司 集成电路、垂直金属‑绝缘体‑金属电容器及其制造方法
CN107437538B (zh) * 2016-05-26 2020-03-31 台湾积体电路制造股份有限公司 集成电路、垂直金属-绝缘体-金属电容器及其制造方法

Also Published As

Publication number Publication date
JPH0145232B2 (enrdf_load_stackoverflow) 1989-10-03

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