JPH0145746B2 - - Google Patents

Info

Publication number
JPH0145746B2
JPH0145746B2 JP56108403A JP10840381A JPH0145746B2 JP H0145746 B2 JPH0145746 B2 JP H0145746B2 JP 56108403 A JP56108403 A JP 56108403A JP 10840381 A JP10840381 A JP 10840381A JP H0145746 B2 JPH0145746 B2 JP H0145746B2
Authority
JP
Japan
Prior art keywords
layer
capacitor
tantalum
present
tasi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56108403A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5810852A (ja
Inventor
Kanetake Takasaki
Yoshimi Shiotani
Kenji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56108403A priority Critical patent/JPS5810852A/ja
Publication of JPS5810852A publication Critical patent/JPS5810852A/ja
Publication of JPH0145746B2 publication Critical patent/JPH0145746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP56108403A 1981-07-10 1981-07-10 半導体装置 Granted JPS5810852A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56108403A JPS5810852A (ja) 1981-07-10 1981-07-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56108403A JPS5810852A (ja) 1981-07-10 1981-07-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS5810852A JPS5810852A (ja) 1983-01-21
JPH0145746B2 true JPH0145746B2 (enrdf_load_stackoverflow) 1989-10-04

Family

ID=14483864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56108403A Granted JPS5810852A (ja) 1981-07-10 1981-07-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS5810852A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072261A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 半導体装置
JPS60111451A (ja) * 1983-11-21 1985-06-17 Toshiba Corp 半導体装置及びその製造方法
JPS61150368A (ja) * 1984-12-25 1986-07-09 Nec Corp 半導体装置
JPS61196566A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 半導体装置
JPH04242970A (ja) * 1991-01-01 1992-08-31 Tadahiro Omi ダイナミック型半導体メモリ
DE19937503C1 (de) * 1999-08-09 2001-01-04 Siemens Ag Verfahren zum Ätzen von wismuthaltigen Oxidfilmen

Also Published As

Publication number Publication date
JPS5810852A (ja) 1983-01-21

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