JPS583260A - Vertical type buried capacitor - Google Patents

Vertical type buried capacitor

Info

Publication number
JPS583260A
JPS583260A JP56101112A JP10111281A JPS583260A JP S583260 A JPS583260 A JP S583260A JP 56101112 A JP56101112 A JP 56101112A JP 10111281 A JP10111281 A JP 10111281A JP S583260 A JPS583260 A JP S583260A
Authority
JP
Japan
Prior art keywords
layer
capacitor
vertical type
type buried
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56101112A
Other languages
Japanese (ja)
Other versions
JPH0145232B2 (en
Inventor
Yuji Furumura
Mamoru Maeda
Mikio Takagi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56101112A priority Critical patent/JPH0145232B2/ja
Publication of JPS583260A publication Critical patent/JPS583260A/en
Publication of JPH0145232B2 publication Critical patent/JPH0145232B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10829Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor being in a substrate trench

Abstract

PURPOSE:To form a vertical type buried capacitor having large capacitance value by sequentially laminating an insulating layer, the first conductive layer, a dielectric layer and the second conductive layer on the region to be formed with a capacitor at the grooved hole formed on a substrate. CONSTITUTION:Grooved holes 4 are formed on an Si substrate 1, and an insulating layer 5 is covered on the surface of the hole 4 and the region to be formed with a capacitor on a semiconductive layer. The first metal thin layer 6 of Ta, a dielectric layer 7 of Ta2P5, the second metal thin layer 9 of Al, Ta are sequentially laminated therein, and a capacitor is formed with the first layer, the dielectric layer and the second layer. In this manner, the surface area of the capacitor per flat area can be increased, thereby obtaining a large capacitance value by enhancing the dielectric constant.
JP56101112A 1981-06-29 1981-06-29 Expired JPH0145232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56101112A JPH0145232B2 (en) 1981-06-29 1981-06-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56101112A JPH0145232B2 (en) 1981-06-29 1981-06-29

Publications (2)

Publication Number Publication Date
JPS583260A true JPS583260A (en) 1983-01-10
JPH0145232B2 JPH0145232B2 (en) 1989-10-03

Family

ID=14291985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101112A Expired JPH0145232B2 (en) 1981-06-29 1981-06-29

Country Status (1)

Country Link
JP (1) JPH0145232B2 (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213460A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor integrated circuit device
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
FR2544537A1 (en) * 1983-04-15 1984-10-19 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE OF DYNAMIC MEMORY TYPE WITH DIRECT OR RANDOM ACCESS (DRAM) WITH HIGH INTEGRATION DENSITY AND METHOD OF MANUFACTURING SUCH A DEVICE
JPS59191374A (en) * 1983-04-15 1984-10-30 Hitachi Ltd Semiconductor integrated circuit device
JPS6065559A (en) * 1983-09-21 1985-04-15 Hitachi Ltd Semiconductor memory
FR2554954A1 (en) * 1983-11-11 1985-05-17 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE
JPS6092658A (en) * 1983-10-27 1985-05-24 Matsushita Electronics Corp Semiconductor memory device
JPS60113460A (en) * 1983-11-25 1985-06-19 Oki Electric Ind Co Ltd Dynamic memory element
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
JPS60198771A (en) * 1984-03-23 1985-10-08 Hitachi Ltd Semiconductor device
JPS60200565A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Semiconductor device
JPS6136965A (en) * 1984-07-30 1986-02-21 Toshiba Corp Semiconductor memory device
JPS6167955A (en) * 1984-09-11 1986-04-08 Fujitsu Ltd Semiconductor memory device and manufacture thereof
JPS6190395A (en) * 1984-10-09 1986-05-08 Fujitsu Ltd Semiconductor memory cell
JPS61160969A (en) * 1984-12-07 1986-07-21 Texas Instruments Inc Memory cell and manufacture thereof
JPS61207055A (en) * 1985-03-11 1986-09-13 Nec Corp Semiconductor memory device
JPS627154A (en) * 1985-07-02 1987-01-14 Mitsubishi Electric Corp Semiconductor device
JPS6237366U (en) * 1985-08-14 1987-03-05
US4717942A (en) * 1983-07-29 1988-01-05 Nec Corporation Dynamic ram with capacitor groove surrounding switching transistor
US4792834A (en) * 1984-01-20 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor memory device with buried layer under groove capacitor
US4999689A (en) * 1987-11-06 1991-03-12 Sharp Kabushiki Kaisha Semiconductor memory
US5012308A (en) * 1984-08-27 1991-04-30 Kabushiki Kaisha Toshiba Semiconductor memory device
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
CN107437538A (en) * 2016-05-26 2017-12-05 台湾积体电路制造股份有限公司 Integrated circuit, vertical metal insulator metal capacitor and its manufacture method

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213460A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor integrated circuit device
JPH0342514B2 (en) * 1982-11-04 1991-06-27
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
US5214496A (en) * 1982-11-04 1993-05-25 Hitachi, Ltd. Semiconductor memory
FR2544537A1 (en) * 1983-04-15 1984-10-19 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE OF DYNAMIC MEMORY TYPE WITH DIRECT OR RANDOM ACCESS (DRAM) WITH HIGH INTEGRATION DENSITY AND METHOD OF MANUFACTURING SUCH A DEVICE
JPS59191373A (en) * 1983-04-15 1984-10-30 Hitachi Ltd Semiconductor integrated circuit device
JPH0576785B2 (en) * 1983-04-15 1993-10-25 Hitachi Ltd
US5021842A (en) * 1983-04-15 1991-06-04 Hitachi, Ltd. Trench DRAM cell with different insulator thicknesses
JPS59191374A (en) * 1983-04-15 1984-10-30 Hitachi Ltd Semiconductor integrated circuit device
US4717942A (en) * 1983-07-29 1988-01-05 Nec Corporation Dynamic ram with capacitor groove surrounding switching transistor
JPS6065559A (en) * 1983-09-21 1985-04-15 Hitachi Ltd Semiconductor memory
JPS6092658A (en) * 1983-10-27 1985-05-24 Matsushita Electronics Corp Semiconductor memory device
FR2554954A1 (en) * 1983-11-11 1985-05-17 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE
JPS60113460A (en) * 1983-11-25 1985-06-19 Oki Electric Ind Co Ltd Dynamic memory element
JPH0347588B2 (en) * 1983-11-25 1991-07-19 Oki Electric Ind Co Ltd
JPS60126861A (en) * 1983-12-13 1985-07-06 Fujitsu Ltd Semiconductor memory device
US4646118A (en) * 1983-12-13 1987-02-24 Fujitsu Limited Semiconductor memory device
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
JPH0562468B2 (en) * 1983-12-13 1993-09-08 Fujitsu Ltd
US4792834A (en) * 1984-01-20 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor memory device with buried layer under groove capacitor
JPS60198771A (en) * 1984-03-23 1985-10-08 Hitachi Ltd Semiconductor device
JPS60200565A (en) * 1984-03-26 1985-10-11 Hitachi Ltd Semiconductor device
JPS6136965A (en) * 1984-07-30 1986-02-21 Toshiba Corp Semiconductor memory device
US5012308A (en) * 1984-08-27 1991-04-30 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6167955A (en) * 1984-09-11 1986-04-08 Fujitsu Ltd Semiconductor memory device and manufacture thereof
JPH0365904B2 (en) * 1984-09-11 1991-10-15
JPH0542758B2 (en) * 1984-10-09 1993-06-29 Fujitsu Ltd
JPS6190395A (en) * 1984-10-09 1986-05-08 Fujitsu Ltd Semiconductor memory cell
JPS61160969A (en) * 1984-12-07 1986-07-21 Texas Instruments Inc Memory cell and manufacture thereof
JPS61207055A (en) * 1985-03-11 1986-09-13 Nec Corp Semiconductor memory device
JPS627154A (en) * 1985-07-02 1987-01-14 Mitsubishi Electric Corp Semiconductor device
JPS6237366U (en) * 1985-08-14 1987-03-05
US4999689A (en) * 1987-11-06 1991-03-12 Sharp Kabushiki Kaisha Semiconductor memory
CN107437538A (en) * 2016-05-26 2017-12-05 台湾积体电路制造股份有限公司 Integrated circuit, vertical metal insulator metal capacitor and its manufacture method
CN107437538B (en) * 2016-05-26 2020-03-31 台湾积体电路制造股份有限公司 Integrated circuit, vertical metal-insulator-metal capacitor and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0145232B2 (en) 1989-10-03

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