JPH04394B2 - - Google Patents
Info
- Publication number
- JPH04394B2 JPH04394B2 JP56101129A JP10112981A JPH04394B2 JP H04394 B2 JPH04394 B2 JP H04394B2 JP 56101129 A JP56101129 A JP 56101129A JP 10112981 A JP10112981 A JP 10112981A JP H04394 B2 JPH04394 B2 JP H04394B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitor
- type semiconductor
- conductivity type
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56101129A JPS583261A (ja) | 1981-06-29 | 1981-06-29 | 竪型埋め込みキヤパシタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56101129A JPS583261A (ja) | 1981-06-29 | 1981-06-29 | 竪型埋め込みキヤパシタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS583261A JPS583261A (ja) | 1983-01-10 |
| JPH04394B2 true JPH04394B2 (enrdf_load_stackoverflow) | 1992-01-07 |
Family
ID=14292461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56101129A Granted JPS583261A (ja) | 1981-06-29 | 1981-06-29 | 竪型埋め込みキヤパシタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS583261A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214496A (en) * | 1982-11-04 | 1993-05-25 | Hitachi, Ltd. | Semiconductor memory |
| JPH0640573B2 (ja) * | 1983-12-26 | 1994-05-25 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
| JPH077823B2 (ja) * | 1983-11-18 | 1995-01-30 | 株式会社日立製作所 | 半導体集積回路装置 |
| JPS60130163A (ja) * | 1983-12-16 | 1985-07-11 | Toshiba Corp | 半導体集積回路 |
-
1981
- 1981-06-29 JP JP56101129A patent/JPS583261A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS583261A (ja) | 1983-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2743391B2 (ja) | 半導体メモリの製造方法 | |
| US5068199A (en) | Method for anodizing a polysilicon layer lower capacitor plate of a DRAM to increase capacitance | |
| KR900000207B1 (ko) | 반도체 기억장치와 그 제조방법 | |
| US4646118A (en) | Semiconductor memory device | |
| JP2875588B2 (ja) | 半導体装置の製造方法 | |
| JPS62286270A (ja) | 半導体メモリ装置 | |
| JPS60214558A (ja) | 半導体装置の製造方法 | |
| US5945703A (en) | Semiconductor memory device and manufacturing method therefor | |
| JP2604705B2 (ja) | Ｍｏｓキヤパシタの製造方法 | |
| JP2941039B2 (ja) | 半導体メモリ装置の製造方法 | |
| KR920010695B1 (ko) | 디램셀 및 그 제조방법 | |
| JPH04394B2 (enrdf_load_stackoverflow) | ||
| JPH0673368B2 (ja) | 半導体記憶装置およびその製造方法 | |
| JPH0640573B2 (ja) | 半導体集積回路装置 | |
| JPS61274355A (ja) | Ｍｉｓ型半導体記憶装置 | |
| JPS6058663A (ja) | 電荷一時蓄積記憶装置 | |
| JPH077823B2 (ja) | 半導体集積回路装置 | |
| JPH0145746B2 (enrdf_load_stackoverflow) | ||
| JPS61199657A (ja) | 半導体記憶装置 | |
| JPS60173871A (ja) | Ｍｉｓ型半導体記憶装置およびその製造方法 | |
| JPS60113461A (ja) | 半導体装置の製造方法 | |
| JPH0226066A (ja) | 半導体メモリ装置 | |
| JPH04291956A (ja) | 半導体記憶装置の製造方法 | |
| JPH0329186B2 (enrdf_load_stackoverflow) | ||
| JPS6058662A (ja) | 電荷一時蓄積記憶装置 |