JPS5646562A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5646562A
JPS5646562A JP12304679A JP12304679A JPS5646562A JP S5646562 A JPS5646562 A JP S5646562A JP 12304679 A JP12304679 A JP 12304679A JP 12304679 A JP12304679 A JP 12304679A JP S5646562 A JPS5646562 A JP S5646562A
Authority
JP
Japan
Prior art keywords
layers
type
channel region
channel
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12304679A
Other languages
English (en)
Inventor
Shozo Watabe
Jiro Kasahara
Yoji Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12304679A priority Critical patent/JPS5646562A/ja
Publication of JPS5646562A publication Critical patent/JPS5646562A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
JP12304679A 1979-09-25 1979-09-25 Semiconductor device Pending JPS5646562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12304679A JPS5646562A (en) 1979-09-25 1979-09-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12304679A JPS5646562A (en) 1979-09-25 1979-09-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5646562A true JPS5646562A (en) 1981-04-27

Family

ID=14850862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12304679A Pending JPS5646562A (en) 1979-09-25 1979-09-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5646562A (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827373A (ja) * 1981-08-11 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製法
JPS5860574A (ja) * 1981-10-06 1983-04-11 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS5879770A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5880873A (ja) * 1981-11-09 1983-05-16 Sumitomo Electric Ind Ltd シヨツトキゲ−ト型電界トランジスタおよびその製造方法
JPS58123777A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS58124279A (ja) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS5972774A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ガリウム・ヒ素電界効果トランジスタ
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPS6155973A (ja) * 1984-08-27 1986-03-20 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電界効果トランジスタ構造とその製造方法
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (ja) * 1972-09-28 1974-05-24
JPS51123076A (en) * 1975-04-18 1976-10-27 New Japan Radio Co Ltd The manufacturing process of field effect transistor
JPS53116079A (en) * 1977-03-19 1978-10-11 Nippon Gakki Seizo Kk Transistor and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (ja) * 1972-09-28 1974-05-24
JPS51123076A (en) * 1975-04-18 1976-10-27 New Japan Radio Co Ltd The manufacturing process of field effect transistor
JPS53116079A (en) * 1977-03-19 1978-10-11 Nippon Gakki Seizo Kk Transistor and its manufacture

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827373A (ja) * 1981-08-11 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製法
JPH0324060B2 (ja) * 1981-10-06 1991-04-02 Nippon Telegraph & Telephone
JPS5860574A (ja) * 1981-10-06 1983-04-11 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタの製造方法
JPS5879770A (ja) * 1981-11-06 1983-05-13 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5880873A (ja) * 1981-11-09 1983-05-16 Sumitomo Electric Ind Ltd シヨツトキゲ−ト型電界トランジスタおよびその製造方法
JPS58123777A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS58124279A (ja) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS5972774A (ja) * 1982-10-19 1984-04-24 Mitsubishi Electric Corp ガリウム・ヒ素電界効果トランジスタ
JPS6086866A (ja) * 1983-10-19 1985-05-16 Matsushita Electronics Corp 電界効果トランジスタおよびその製造方法
JPS6155973A (ja) * 1984-08-27 1986-03-20 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電界効果トランジスタ構造とその製造方法
JPH0328059B2 (ja) * 1984-08-27 1991-04-17 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6281767A (ja) * 1985-10-07 1987-04-15 Hitachi Ltd 電界効果トランジスタ
JPH0824131B2 (ja) * 1985-10-07 1996-03-06 株式会社日立製作所 電界効果トランジスタ

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