JPS4953780A - - Google Patents

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Publication number
JPS4953780A
JPS4953780A JP9737372A JP9737372A JPS4953780A JP S4953780 A JPS4953780 A JP S4953780A JP 9737372 A JP9737372 A JP 9737372A JP 9737372 A JP9737372 A JP 9737372A JP S4953780 A JPS4953780 A JP S4953780A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9737372A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9737372A priority Critical patent/JPS4953780A/ja
Publication of JPS4953780A publication Critical patent/JPS4953780A/ja
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)
JP9737372A 1972-09-28 1972-09-28 Pending JPS4953780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9737372A JPS4953780A (ja) 1972-09-28 1972-09-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9737372A JPS4953780A (ja) 1972-09-28 1972-09-28

Publications (1)

Publication Number Publication Date
JPS4953780A true JPS4953780A (ja) 1974-05-24

Family

ID=14190693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9737372A Pending JPS4953780A (ja) 1972-09-28 1972-09-28

Country Status (1)

Country Link
JP (1) JPS4953780A (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631873A1 (de) 1976-07-15 1978-01-19 Siemens Ag Halbleiterbauelement mit einem schottky-kontakt mit kleinem serienwiderstand und verfahren zu seiner herstellung
JPS53119866U (ja) * 1977-02-28 1978-09-22
JPS53139283U (ja) * 1977-04-08 1978-11-04
JPS5632771A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Manufacture of semiconductor device
JPS5646562A (en) * 1979-09-25 1981-04-27 Sony Corp Semiconductor device
JPS5683079A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Enhancement type filed-effect transistor
JPS57126168A (en) * 1981-01-29 1982-08-05 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS5843576A (ja) * 1981-09-10 1983-03-14 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ及びその製造方法
JPS5848470A (ja) * 1981-08-31 1983-03-22 バロ−ス・コ−ポレ−シヨン 金属半導体電界効果トランジスタの製造方法
JPS5848968A (ja) * 1981-09-18 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPS58123778A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS62177974A (ja) * 1986-01-31 1987-08-04 Nec Corp 半導体装置の製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631873A1 (de) 1976-07-15 1978-01-19 Siemens Ag Halbleiterbauelement mit einem schottky-kontakt mit kleinem serienwiderstand und verfahren zu seiner herstellung
JPS53119866U (ja) * 1977-02-28 1978-09-22
JPS53139283U (ja) * 1977-04-08 1978-11-04
JPS5632771A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Manufacture of semiconductor device
JPS5646562A (en) * 1979-09-25 1981-04-27 Sony Corp Semiconductor device
JPS5683079A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Enhancement type filed-effect transistor
JPS57126168A (en) * 1981-01-29 1982-08-05 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS5834980A (ja) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタ
JPS6311787B2 (ja) * 1981-08-31 1988-03-16 Yunishisu Corp
JPS5848470A (ja) * 1981-08-31 1983-03-22 バロ−ス・コ−ポレ−シヨン 金属半導体電界効果トランジスタの製造方法
JPS5843576A (ja) * 1981-09-10 1983-03-14 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ及びその製造方法
JPS5848968A (ja) * 1981-09-18 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS58115867A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 電界効果型半導体装置
JPH044751B2 (ja) * 1981-12-28 1992-01-29
JPS58123778A (ja) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd シヨツトキゲ−ト電界効果トランジスタとその製造方法
JPS62177974A (ja) * 1986-01-31 1987-08-04 Nec Corp 半導体装置の製造方法

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