JPS57126168A - Schottky gate field effect transistor - Google Patents

Schottky gate field effect transistor

Info

Publication number
JPS57126168A
JPS57126168A JP1181281A JP1181281A JPS57126168A JP S57126168 A JPS57126168 A JP S57126168A JP 1181281 A JP1181281 A JP 1181281A JP 1181281 A JP1181281 A JP 1181281A JP S57126168 A JPS57126168 A JP S57126168A
Authority
JP
Japan
Prior art keywords
operational layer
pole
mask
carriers
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1181281A
Other languages
Japanese (ja)
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP1181281A priority Critical patent/JPS57126168A/en
Priority to US06/342,912 priority patent/US4694563A/en
Priority to EP82300499A priority patent/EP0057605B1/en
Priority to DE8282300499T priority patent/DE3273695D1/en
Priority to CA000395215A priority patent/CA1187206A/en
Publication of JPS57126168A publication Critical patent/JPS57126168A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Abstract

PURPOSE:To obtain a Schottky gate field effect transistor having favorable microwave characteristic by a method wherein an operational layer having the flat surface is formed on a semiinsulating semiconductor substrate by ion implan tation, a mask is provided at the center part, ions are implanted again to the part of the operational layer wherein the mask is not exist to enhance concentration of carriers and to make depth thereof to deeper, a gate pole is provided at the center part, and source and drain poles are provided at both the end parts. CONSTITUTION:An operational layer 22' having uniform thickness is formed by Si<+> ion implantation on the surface of a semiinsulating GaAs substrate 21 selecting thickness and concentration of carriers as to enable to obtain the desired pinch off voltage. Then the pattern 27 of photo resist film is provided at the center part thereon, ion implantation is performed again making the film thereof as the mask, and the operational layer 22'' being added with concentration of carriers deeper than the operational layer 22' is made to be generated at the region wherein the pattern 27 does not exist. After then, the pattern 27 is removed, the gate pole 25 is equipped thereto, and the source pole 23 and the drain pole 24 are formed respectively at both the end parts of the operational layer 22'' interposign the gate pole between them.
JP1181281A 1981-01-29 1981-01-29 Schottky gate field effect transistor Pending JPS57126168A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1181281A JPS57126168A (en) 1981-01-29 1981-01-29 Schottky gate field effect transistor
US06/342,912 US4694563A (en) 1981-01-29 1982-01-26 Process for making Schottky-barrier gate FET
EP82300499A EP0057605B1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
DE8282300499T DE3273695D1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
CA000395215A CA1187206A (en) 1981-01-29 1982-01-29 Schottky-barrier gate field effect transistor and a process for the production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1181281A JPS57126168A (en) 1981-01-29 1981-01-29 Schottky gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS57126168A true JPS57126168A (en) 1982-08-05

Family

ID=11788220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1181281A Pending JPS57126168A (en) 1981-01-29 1981-01-29 Schottky gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57126168A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (en) * 1972-09-28 1974-05-24
JPS50109683A (en) * 1974-02-04 1975-08-28
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor
JPS55105380A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953780A (en) * 1972-09-28 1974-05-24
JPS50109683A (en) * 1974-02-04 1975-08-28
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor
JPS55105380A (en) * 1979-02-07 1980-08-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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