JPH11512886A - 自己整列的に部分的に深く拡散したエミッタの太陽電池 - Google Patents
自己整列的に部分的に深く拡散したエミッタの太陽電池Info
- Publication number
- JPH11512886A JPH11512886A JP9514376A JP51437697A JPH11512886A JP H11512886 A JPH11512886 A JP H11512886A JP 9514376 A JP9514376 A JP 9514376A JP 51437697 A JP51437697 A JP 51437697A JP H11512886 A JPH11512886 A JP H11512886A
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- Prior art keywords
- emitter
- region
- aluminum
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 238000002161 passivation Methods 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 23
- 239000004332 silver Substances 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 87
- 239000002019 doping agent Substances 0.000 claims description 67
- 239000000463 material Substances 0.000 claims description 66
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 14
- 230000003667 anti-reflective effect Effects 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 56
- 229910052751 metal Inorganic materials 0.000 abstract description 35
- 239000002184 metal Substances 0.000 abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 22
- 238000007650 screen-printing Methods 0.000 abstract description 12
- 239000006117 anti-reflective coating Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 90
- 210000004027 cell Anatomy 0.000 description 80
- 230000008569 process Effects 0.000 description 29
- 230000006798 recombination Effects 0.000 description 23
- 238000005215 recombination Methods 0.000 description 23
- 239000011521 glass Substances 0.000 description 14
- 230000008901 benefit Effects 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 238000005247 gettering Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 241001676573 Minium Species 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.太陽電池であって、 第1の表面と第2の表面とを有する半導体基板と、 前記第1の表面および第2の表面のうちの一方に、比較的低いドーパント濃度 で比較的浅い深さに形成された第1の複数のエミッタ領域と、第1の表面および 第2の表面のうちの前記一方に、前記第1の複数の領域よりも比較的高いドーパ ント濃度で前記第1の複数の領域よりもかなり深い深さまで形成された第2の複 数のエミッタ領域とを備え、前記第1の複数の領域と第2の複数の領域が交互に 配置され、前記太陽電池がさらに、 表面電界を与えるために前記第1の表面および第2の表面のうちの前記他方に 形成されたドーパント領域と、 前記ドーパント領域上に形成されたオーミック接点と、 前記第2の複数のエミッタ領域上に形成されたアルミニウムを含む第1のパタ ーン化オーミック電極層とを備えることを特徴とする太陽電池。 2.前記半導体基板がn型ドープ・シリコンを備えることを特徴とする請求項1 に記載の発明。 3.前記第1の複数のエミッタ領域がホウ素などのp型ドーパント材料を使用し て形成されることを特徴とする請求項1に記載の発明。 4.前記ドーパント材料がホウ素であることを特徴とする請求項3に記載の発明 。 5.前記第2の複数のエミッタ領域がp+型ドーパント材料で形成されることを 特徴とする請求項1に記載の発明。 6.前記ドーパント材料がアルミニウムであることを特徴とする請求項5に記載 の発明。 7.前記ドーパント材料がアルミニウムとシリコンの合金であることを特徴とす る請求項5に記載の発明。 8.前記ドーパント領域がn+型ドーパント材料を使用して形成されることを特 徴とする請求項1に記載の発明。 9.前記ドーパント材料がリンであることを特徴とする請求項8に記載の発明。 10.前記第1の複数のエミッタ領域の深さは好ましくは約0.2μm以下であ ることを特徴とする請求項1に記載の発明。 11.前記第1の複数のエミッタ領域の濃度が約5×1018cm-3以下であるこ とを特徴とする請求項1に記載の発明。 12.前記第2の複数のエミッタ領域の最小深さは約2μmであることを特徴と する請求項1に記載の発明。 13.前記第2の複数のエミッタ領域の濃度が約1×1019cm-3以上であるこ とを特徴とする請求項1に記載の発明。 14.前記オーミック抵抗が銀で形成されることを特徴とする請求項1に記載の 発明。 15.さらに、前記第1のパターン化オーミック電極層上に、はんだ付け可能な オーミック材料の第2のパターン化層を含むことを特徴とする請求項1に記載の 発明。 16.前記はんだ付け可能な材料が銀であることを特徴とする請求項15に記載 の発明。 17.さらに、前記第1の表面および第2の表面のうちの前記一方上の、前記第 1のパターン化オーミック接触層の接点間の領域に形成されたパッシベーション 層を含むことを特徴とする請求項1に記載の発明。 18.さらに、前記パッシベーション層上に形成された反射防止層を含むことを 特徴とする請求項17に記載の発明。 19.自己整列局部深拡散エミッタを有する太陽電池を製造する方法であって、 (a)第1の表面と第2の表面とを有する半導体基板を用意するステップと、 (b)前記第1の表面および第2の表面のうちの一方に第1の導電型の比較的 浅いエミッタ領域を形成するステップと、 (c)前記第1の表面および第2の表面のうちの他方に第2の導電型の比較的 浅い電界領域を形成するステップと、 (d)前記第1の表面および第2の表面のうちの前記一方上にアルミニウムを 含むパターン化層を設けるステップと、 (e)前記基板を加熱し、前記基板の前記パターン化層の下の領域に前記第1 の導電型の複数の比較的深いエミッタ領域を形成するステップと、 (f)前記第1の表面および第2の表面のうちの前記他方とのオーミック接点 を設けるステップとを含む方法。 20.前記比較的浅いエミッタ領域がp+型ドーパント材料を使用して形成され ることを特徴とする請求項19に記載の方法。 21.前記比較的浅い電界領域がn+型ドーパント材料を使用して形成されるこ とを特徴とする請求項19に記載の方法。 22.さらに、アルミニウムを含む前記パターン化層上にオーミック・パターン 化層を付与するステップを含むことを特徴とする請求項19に記載の方法。 23.さらに、前記第1および第2の表面のうちの前記一方の、前記パターン化 層で覆われていない領域にパッシベーション層を形成するステップを含むことを 特徴とする請求項19に記載の方法。 24.さらに、前記パッシベーション層上に反射防止材料層を形成するステップ を含むことを特徴とする請求項19に記載の方法。 25.前記形成ステップ(b)が、深さが約0.2μm以下であるエミッタ領域 を設けるように行われることを特徴とする請求項19に記載の方法。 26.前記形成ステップ(b)が、ドーパント濃度が約5×1018cm-3以下で あるエミッタ領域を設けるように行われることを特徴とする請求項19に記載の 方法。 27.前記加熱ステップ(e)が、最小深さが約2μmであるエミッタ領域を設 けるように行われることを特徴とする請求項19に記載の方法。 28.前記加熱ステップ(e)が、ドーパント濃度が約1×1019cm-3以下で ある比較的深いエミッタ領域を設けるように行われることを特徴とする請求項1 9に記載の方法。 29.前記形成ステップ(d)が純粋なアルミニウムを用いて行われることを特 徴とする請求項19に記載の方法。 30.前記形成ステップ(d)が、アルミニウムとシリコンの混合物を使用して 行われることを特徴とする請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US483395P | 1995-10-05 | 1995-10-05 | |
US60/004,833 | 1995-10-05 | ||
PCT/US1996/015755 WO1997013280A1 (en) | 1995-10-05 | 1996-10-01 | Self-aligned locally deep- diffused emitter solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11512886A true JPH11512886A (ja) | 1999-11-02 |
Family
ID=21712748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9514376A Withdrawn JPH11512886A (ja) | 1995-10-05 | 1996-10-01 | 自己整列的に部分的に深く拡散したエミッタの太陽電池 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5928438A (ja) |
EP (1) | EP0853822A4 (ja) |
JP (1) | JPH11512886A (ja) |
KR (1) | KR19990063990A (ja) |
CN (1) | CN1155107C (ja) |
AU (1) | AU701213B2 (ja) |
BR (1) | BR9610739A (ja) |
CA (1) | CA2232857C (ja) |
TW (1) | TW332345B (ja) |
WO (1) | WO1997013280A1 (ja) |
Cited By (6)
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JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
JPWO2009110403A1 (ja) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
WO2012036146A1 (ja) * | 2010-09-13 | 2012-03-22 | 株式会社アルバック | 結晶太陽電池及びその製造方法 |
WO2012077568A1 (ja) * | 2010-12-06 | 2012-06-14 | 信越化学工業株式会社 | 太陽電池及び太陽電池モジュール |
JP2015130406A (ja) * | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
US9887312B2 (en) | 2010-12-06 | 2018-02-06 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
US6180869B1 (en) | 1997-05-06 | 2001-01-30 | Ebara Solar, Inc. | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
US6339013B1 (en) | 1997-05-13 | 2002-01-15 | The Board Of Trustees Of The University Of Arkansas | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells |
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JP2010123859A (ja) * | 2008-11-21 | 2010-06-03 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
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JP2012060080A (ja) * | 2010-09-13 | 2012-03-22 | Ulvac Japan Ltd | 結晶太陽電池及びその製造方法 |
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JP5626361B2 (ja) * | 2010-12-06 | 2014-11-19 | 信越化学工業株式会社 | 太陽電池及び太陽電池モジュール、並びに太陽電池の製造方法 |
US9224888B2 (en) | 2010-12-06 | 2015-12-29 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
US9887312B2 (en) | 2010-12-06 | 2018-02-06 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
JP2015130406A (ja) * | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
Also Published As
Publication number | Publication date |
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EP0853822A4 (en) | 1999-08-18 |
TW332345B (en) | 1998-05-21 |
MX9802174A (es) | 1998-08-30 |
EP0853822A1 (en) | 1998-07-22 |
CA2232857A1 (en) | 1997-04-10 |
CN1198841A (zh) | 1998-11-11 |
BR9610739A (pt) | 1999-07-13 |
AU7203996A (en) | 1997-04-28 |
WO1997013280A1 (en) | 1997-04-10 |
US5928438A (en) | 1999-07-27 |
CA2232857C (en) | 2003-05-13 |
AU701213B2 (en) | 1999-01-21 |
KR19990063990A (ko) | 1999-07-26 |
CN1155107C (zh) | 2004-06-23 |
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